# Power MOSFET, N Channel, 60 V, 600 mA, 1 ohm, E-Line, Through Hole ![Product image](https://novapart.co/image/farnell:3943945/) **URL**: https://novapart.co/products/ZVN4206AVSTZ/power-mosfet-n-channel-60-v-600-ma-1-ohm-e-line **SKU**: ZVN4206AVSTZ **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2270 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 700mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | E-Line | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 600mA | | Drain Source On State Resistance | 1ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3943945/) ## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** ## **ZVN4206AV** ## **ISSUE 3 - APRIL 1998** ## FEATURES - 60 Volt VDS - R = 1 Ω DS(on) - Repetitive avalanche rating - No transient protection required - Characterised for 5V logic drive **==> picture [13 x 14] intentionally omitted <==** **----- Start of picture text -----**
D G
S
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- APPLICATIONS - Automotive relay drivers - Stepper motor driver **E-Line TO92 Compatible** ## **ABSOLUTE MAXIMUM RATINGS.** |*
Stepper motor driver
**ABSOLUTE MAXIMUM RATINGS.**||**TO92**|**Compatible**| |---|---|---|---| |PARAMETER|SYMBOL|VALUE|UNIT| |Drain-Source Voltage|VDS|60|V| |Continuous Drain Current at Tamb=25°C|ID|600|mA| |Pulsed Drain Current|IDM|8|A| |Gate-Source Voltage|VGS|±20|V| |Power Dissipation at Tamb=25°C|Ptot|700|mW| |Continuous Body Diode Current at Tamb
=25°C|ISD|600|mA| |Avalanche Current – Repetitive|IAR|600|mA| |Avalanche Energy – Repetitive|EAR|15|mJ| |Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C| ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---| |Drain-Source Breakdown Voltage|BVDSS|60||V|ID=1mA, VGS=0V| |Gate-Source Threshold Voltage|VGS(th)|1.3|3|V|ID=1mA, VDS= VGS| |Gate-Body Leakage|IGSS||100|nA|VGS=±20V, VDS=0V| |Zero Gate Voltage Drain
Current|IDSS||10
100|µA
µA|VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)| |On-State Drain Current(1)|ID(on)|3||A|VDS=25V, VGS=10V| |Static Drain-Source On-State
Resistance (1)|RDS(on)||1
1.5|Ω
Ω|VGS=10V,ID=1.5A
VGS=5V,ID=.0.5A| |Forward Transconductance(1)(2)|gfs|300||mS|VDS=25V,ID=1.5A| |Input Capacitance (2)|Ciss||100|pF|VDS=25V, VGS=0V, f=1MHz| |Common Source Output
Capacitance (2)|Coss||60|pF|| |Reverse Transfer Capacitance (2)|Crss||20|pF|| |Turn-On Delay Time (2)(3)|td(on)||8|ns|VDD≈25V, ID=1.5A,VGEN=10V| |Rise Time (2)(3)|tr||12|ns|| |Turn-Off Delay Time (2)(3)|td(off)||12|ns|| |Fall Time (2)(3)|tf||15|ns|| (1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator ## **ZVN4206AV** ## **TYPICAL CHARACTERISTICS** **==> picture [345 x 461] intentionally omitted <==** **----- Start of picture text -----**
10 VGS= 10 VGS=
20V 20V
8 16V14V 8 14V16V
12V 12V
6 10V 6 10V
9V 9V
4 8V 4 8V
7V 7V
2 5V6V 2 5V6V
4.5V 4.5V
4V 4V
0 3.5V 0 3.5V
0 10 20 30 40 50 2 4 6 8 10
V DS - Drain Source Voltage (Volts) V DS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
10
6
8 VDS=10V
6 4
4
ID= 2
2 3A
1.5A
0.5A 0
0
0 2 4 6 8 10 0 2 4 6 8 10
VGS- Gate Source Voltage (Volts) V GS- Gate Source Voltage (Volts)
Voltage Saturation Characteristics Transfer Characteristics
VGS=3.5V 4.5V 6V 8V 10V
10 2.6
2.4 VGS=10V
2.2 ID=1.5A
2.0
14V 1.8
1.0 1.6
1.4
20V 20V 1.2 VGS=VDS
1.0 ID=1mA
0.8
0.1 0.6 -50 -25 0 25 50 75 100 125 150 175 200 225
0.1 1.0 10
I D- Drain Current (Amps) Tj-Junction Temperature (°C)
On-resistance v drain current Normalised RDS(on) and VGS(th) v Temperature
Gate Threshold Voltage VGS(TH)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)( Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
I D - Drain Current (Amps)I D
- Drain Current (Amps)
I D
GS(th)
and V
DS(on)
Normalised R
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## **ZVN4206AV** ## **TYPICAL CHARACTERISTICS** **==> picture [345 x 459] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
900 900
800 800
700 700
600 VDS=10V 600 VDS=10V
500 500
400 400
300 300
200 200
100 100
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
ID- Drain Current (Amps ) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
VDS=
20V 40V 60V
16
200 ID=1.5A
14
160 12
120 10
8
80 6
Ciss
40 4
Coss
2
0 Crss
0
0 10 20 30 40 50 60 70 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)
Maximum repetative avalanche energy Maximum repetative avalanche current
v Junction Temperature v Junction Temperature
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
- Repetative Avalance Energy (mJ) - Repetative Avalance Current (A)
EAR IAR
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