# Power MOSFET, Enhancement Mode, N Channel, 200 V, 60 mA, 25 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2061497/)

**URL**: https://novapart.co/products/ZVN3320FTA/power-mosfet-enhancement-mode-n-channel-200-v-60
**SKU**: ZVN3320FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1640
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:60mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 60mA |
| Drain Source On State Resistance | 25ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2061497/)

## **SOT23 N-CHANNEL ENHANCEMENT** 

## **MODE VERTICAL DMOS FET** 

## **ZVN3320F** 

**ISSUE 3 – DECEMBER 1995** % 

FEATURES 

- 200 Volt VDS 

- R = 25 Ω DS(on) 

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## PARTMARKING DETAIL – MU 

## **ABSOLUTE MAXIMUM RATINGS.** 

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|**ABSOLUTE MAXIMUM RATINGS.**||||
|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Drain-Source Voltage|VDS|200|V|
|Continuous Drain Current at Tamb=25°C|ID|60|mA|
|Pulsed Drain Current|IDM|1|A|
|Gate-Source Voltage|VGS|±20|V|
|Power Dissipation at Tamb=25°C|Ptot|330|mW|
|Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C|



## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** 

|PARAMETER|SYMBOL|MIN.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|
|Drain-Source<br>Breakdown Voltage|BVDSS|200||V|ID=1mA, VGS=0V|
|Gate-Source Threshold<br>Voltage|VGS(th)|1.0|3.0|V|ID=1mA, VDS= VGS|
|Gate-Body Leakage|IGSS||100|nA|VGS=± 20V, VDS=0V|
|Zero Gate Voltage<br>Drain Current|IDSS||10<br>50|µA<br>µA|VDS=200V, VGS=0V<br>VDS=160V, VGS=0V,<br>T=125°C(2)|
|On-State Drain Current(1)|ID(on)|250||mA|VDS=25V, VGS=10V|
|Static Drain-Source On-State<br>Resistance (1)|RDS(on)||25|Ω|VGS=10V,ID=100mA|
|Forward Transconductance(1)<br>(2)|gfs|75||mS|VDS=25V,ID=100mA|
|Input Capacitance (2)|Ciss||45|pF||
|Common Source<br>Output Capacitance (2)|Coss||18|pF|VDS=25V, VGS=0V, f=1MHz|
|Reverse Transfer Capacitance<br>(2)|Crss||5|pF||
|Turn-On Delay Time (2)(3)|td(on)||5|ns||
|Rise Time (2)(3)|tr||7|ns|V≈25VI=100mA|
|Turn-Off Delay Time (2)(3)|td(off)||6|ns|DD , D|
|Fall Time (2)(3)|tf||6|ns||



- (1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%  (2) Sample test. 

(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator 

3 - 398 



## Links

- [View this product on Novapart](https://novapart.co/products/ZVN3320FTA/power-mosfet-enhancement-mode-n-channel-200-v-60)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zvn3320fta/mosfet-n-ch-200v-0-06a-sot23/dp/2061497)
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