# Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, E-Line, Through Hole
**URL**: https://novapart.co/products/ZVN3310ASTZ/power-mosfet-n-channel-100-v-200-ma-10-ohm-e-line
**SKU**: ZVN3310ASTZ
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2380
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | E-Line |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 10ohm |
| Gate Source Threshold Voltage Max | 2.4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3943943/)
## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET**
## **ZVN3310A**
## **ISSUE 2 – MARCH 94**
## FEATURES
- 100 Volt VDS
- R = 10Ω DS(on)
## **ABSOLUTE MAXIMUM RATINGS.**
**==> picture [103 x 92] intentionally omitted <==**
**----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
|**ABSOLUTE MAXIMUM RATINGS.**||||
|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Drain-Source Voltage|VDS|100|V|
|Continuous Drain Current at Tamb=25°C|ID|200|mA|
|Pulsed Drain Current|IDM|2|A|
|Gate-Source Voltage|VGS|±20|V|
|Power Dissipation at Tamb=25°C|Ptot|625|mW|
|Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C|
## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).**
|PARAMETER|SYMBOL|MIN.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|
|Drain-Source Breakdown
Voltage|BVDSS|100||V|ID=1mA, VGS=0V|
|Gate-Source Threshold
Voltage|VGS(th)|0.8|2.4|V|ID=1mA, VDS= VGS|
|Gate-Body Leakage|IGSS||20|nA|VGS=±20V, VDS=0V|
|Zero Gate Voltage Drain
Current|IDSS||1
50|µA
µA|VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)|
|On-State Drain Current(1)|ID(on)|500||mA|VDS=25V, VGS=10V|
|Static Drain-Source On-State
Resistance (1)|RDS(on)||10|Ω|VGS=10V,ID=500mA|
|Forward Transconductance(1)(2
)|
gfs|100||mS|VDS=25V,ID=500mA|
|Input Capacitance (2)|Ciss||40|pF|VDS=25V, VGS=0V, f=1MHz|
|Common Source Output
Capacitance (2)|Coss||15|pF||
|Reverse Transfer Capacitance
(2)|Crss||5|pF||
|Turn-On Delay Time (2)(3)|td(on)||5|ns|VDD≈25V, ID=500mA|
|Rise Time (2)(3)|tr||7|ns||
|Turn-Off Delay Time (2)(3)|td(off)||6|ns||
|Fall Time (2)(3)|tf||7|ns||
3-378
## **ZVN3310A**
## **TYPICAL CHARACTERISTICS**
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1.4 1.6
1.2 V10VGS= 1.4
1.0 9V8V 1.2 V10VGS=
1.0 9V
0.8 7V 8V
0.6 6V 0.8 7V
0.6 6V
0.4 5V 0.4 5V
0.2 4V 4V
0.2
0 3V 3V
0
0 10 20 30 40 50 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
1.4
10
VDS=
1.2 25V
8
1.0
6 0.8
ID= 0.6
4 1A
0.4
2 0.5A 0.2
0.2A
0
0
0 4 8 12 16 20 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics Transfer Characteristics
100 2.4
2.2 ID=-0.5A
2.0
1.8
1.6
10 1.4
ID= 1.2
1A
0.5A 1.0
0.2A 0.8
0.6
1 0.4
1 2 3 4 5 6 7 8 9 10 20 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS-Gate Source Voltage (Volts) T-Temperature (C°)
On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
-Drain Source Resistance
DS(ON)
R
-On-State Drain Current (Amps) -On-State Drain Current (Amps)
D(On) D(On)
I I
On-State Drain Current (Amps)
D(On)-
I
GS(th)
and V
DS(on)
Normalised R
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## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94**
## FEATURES
- 100 Volt VDS
- R = 10Ω DS(on)
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**----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
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## **ZVN3310A**
**==> picture [103 x 92] intentionally omitted <==**
**----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
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## **ZVN3310A**
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**
160 160
120 VDS= 25V 120 VDS= 25V
80 80
40 40
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
VDS=
20V 50V 80V
16
50
14 ID=0.6A
40 12
30 10
Ciss 8
20 6
4
10
Coss 2
Crss
0
0
0 10 20 30 40 50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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## Links
- [View this product on Novapart](https://novapart.co/products/ZVN3310ASTZ/power-mosfet-n-channel-100-v-200-ma-10-ohm-e-line)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zvn3310astz/mosfet-n-ch-100v-0-2a-e-line/dp/3943943)
---
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