# Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole ![Product image](https://novapart.co/image/farnell:9525459/) **URL**: https://novapart.co/products/ZVN3306A/power-mosfet-n-channel-60-v-270-ma-5-ohm-to-226aa **SKU**: ZVN3306A **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: ā‚¬0.2210 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation P ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 625mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-226AA | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150Ā°C | | Continuous Drain Current Id | 270mA | | Drain Source On State Resistance | 5ohm | | Gate Source Threshold Voltage Max | 2.4V | ## Datasheet šŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:9525459/) ## **ZVN3306A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 482] intentionally omitted <==** **----- Start of picture text -----**
VGS=10V 9V
1.0 10
8V
0.8 8
7V
0.6 6V 6
ID=
1A
0.4 5V 4
0.2 4V 2 0.5A
3V 0.25A
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts)
Saturation Characteristics Voltage Saturation Characteristics
1.0 10
VDS=10V
0.8
5
0.6 ID=
1A
0.5A
0.4 0.25A
0.2
1
0
0 2 4 6 8 10 1 10 20
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics On-resistance vs gate-source voltage
2.4
2.2 ID=-0.5A 200
180
2.0
160
1.8
140
1.6
120 VDS=18V
1.4 100
1.2 80
1.0 60
0.8 40
0.6 20
0
0.4-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T-Temperature (CĀ°) ID(on) - Drain Current (Amps)
Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(ā„¦
-Drain Source Resistance
DS(ON)
R
-On-State Drain Current (Amps)
D(On)
I
-On-State Drain Current (Amps)
D(On)
I
GS(th)
and V
DS(on)
Normalised R -Forward Transconductance (mS)fs
g
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**N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 ā€“ MARCH 94** ## FEATURES - 60 Volt VDS **==> picture [54 x 11] intentionally omitted <==** **----- Start of picture text -----**
* R =5ā„¦
DSon)
**----- End of picture text -----**
**==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
**----- End of picture text -----**
## **ZVN3306A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
## **ZVN3306A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 482] intentionally omitted <==** **----- Start of picture text -----**
VGS=10V 9V
1.0 10
8V
0.8 8
7V
0.6 6V 6
ID=
1A
0.4 5V 4
0.2 4V 2 0.5A
3V 0.25A
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts)
Saturation Characteristics Voltage Saturation Characteristics
1.0 10
VDS=10V
0.8
5
0.6 ID=
1A
0.5A
0.4 0.25A
0.2
1
0
0 2 4 6 8 10 1 10 20
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics On-resistance vs gate-source voltage
2.4
2.2 ID=-0.5A 200
180
2.0
160
1.8
140
1.6
120 VDS=18V
1.4 100
1.2 80
1.0 60
0.8 40
0.6 20
0
0.4-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T-Temperature (CĀ°) ID(on) - Drain Current (Amps)
Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(ā„¦
-Drain Source Resistance
DS(ON)
R
-On-State Drain Current (Amps)
D(On)
I
-On-State Drain Current (Amps)
D(On)
I
GS(th)
and V
DS(on)
Normalised R -Forward Transconductance (mS)fs
g
**----- End of picture text -----**
**N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 ā€“ MARCH 94** ## FEATURES - 60 Volt VDS **==> picture [54 x 11] intentionally omitted <==** **----- Start of picture text -----**
* R =5ā„¦
DSon)
**----- End of picture text -----**
**==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
**----- End of picture text -----**
## **ZVN3306A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
**ZVN3306A** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 322] intentionally omitted <==** **----- Start of picture text -----**
200 50
180
160 40
140
120 VDS=18V 30 Ciss
100
80 20
60
40 10
20 Coss
Crss
0 0
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50
VGS-Gate Source Voltage (Volts)
VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage Capacitance v drain-source voltage
VDD=20V 30V 50V
16
14 ID=800mA
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Q-Charge (nC)
Gate charge v gate-source voltage
C-Capacitance (pF)
-Transconductance (mS)
fs
g
-Gate Source Voltage (Volts)
GS
V
**----- End of picture text -----**
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