# Power MOSFET, N Channel, 100 V, 500 mA, 4 ohm, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:9526730RL/) **URL**: https://novapart.co/products/ZVN2110G/power-mosfet-n-channel-100-v-500-ma-4-ohm-sot-223 **SKU**: ZVN2110G **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2850 **Stock**: 500+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Diss ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOT-223 | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 500mA | | Drain Source On State Resistance | 4ohm | | Gate Source Threshold Voltage Max | 2.4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9526730RL/) ## **ZVN2110G** ## **TYPICAL CHARACTERISTICS** **==> picture [322 x 429] intentionally omitted <==** **----- Start of picture text -----**
VGS= VGS=
2.0 10V 9V 2.0 10V9V
8V
1.6 8V 1.6 7V6V
7V
1.2 1.2
6V 5V
0.8 0.8
5V
4V
0.4 4V 0.4
3V
3V
0 0
0 20 40 60 80 100 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
10 2.8
2.4
8
2.0 VDS=25V
6 1.6 VDS=10V
4 1.2
ID=
1A 0.8
2 0.4
500mA
100mA 0
0
0 2 4 6 8 10 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics Transfer Characteristics
10 2.4
2.2
2.0
5 1.8 VGS=10V
ID= 1.6 ID=1 A
1A 1.4
100mA 500mA 1.2 VGS=VDS
ID=1mA
1.0
0.8
0.6
1
1 10 100 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (°C)
On-resistance v gate-source voltage Normalised RDS(on) and VGS(th) v Temperature
Gate Threshold Voltage VGS(TH)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
RDS(on)-Drain Source Resistance
-On-State Drain Current (Amps)
-On-State Drain Current (Amps)
D(on)
I D(on)
I
-On-State Drain Current (Amps)
D(on)
I
GS(th)
and V
DS(on)
Normalised R
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## **SOT223 N-CHANNEL ENHANCEMENT** ## **MODE VERTICAL DMOS FET** **ISSUE 3 – OCTOBER 1995** % FEATURES - 6A PULSE DRAIN CURRENT - FAST SWITCHING SPEED PARTMARKING DETAIL - ZVN2110 COMPLEMENTARY TYPE - ZVP2110G **ABSOLUTE MAXIMUM RATINGS.** ## **ZVN2110G** **==> picture [72 x 67] intentionally omitted <==** **----- Start of picture text -----**
D
S
D
G
**----- End of picture text -----**
## **ZVN2110G** ## **TYPICAL CHARACTERISTICS** **==> picture [322 x 429] intentionally omitted <==** **----- Start of picture text -----**
VGS= VGS=
2.0 10V 9V 2.0 10V9V
8V
1.6 8V 1.6 7V6V
7V
1.2 1.2
6V 5V
0.8 0.8
5V
4V
0.4 4V 0.4
3V
3V
0 0
0 20 40 60 80 100 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
10 2.8
2.4
8
2.0 VDS=25V
6 1.6 VDS=10V
4 1.2
ID=
1A 0.8
2 0.4
500mA
100mA 0
0
0 2 4 6 8 10 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics Transfer Characteristics
10 2.4
2.2
2.0
5 1.8 VGS=10V
ID= 1.6 ID=1 A
1A 1.4
100mA 500mA 1.2 VGS=VDS
ID=1mA
1.0
0.8
0.6
1
1 10 100 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (°C)
On-resistance v gate-source voltage Normalised RDS(on) and VGS(th) v Temperature
Gate Threshold Voltage VGS(TH)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
RDS(on)-Drain Source Resistance
-On-State Drain Current (Amps)
-On-State Drain Current (Amps)
D(on)
I D(on)
I
-On-State Drain Current (Amps)
D(on)
I
GS(th)
and V
DS(on)
Normalised R
**----- End of picture text -----**
## **SOT223 N-CHANNEL ENHANCEMENT** ## **MODE VERTICAL DMOS FET** **ISSUE 3 – OCTOBER 1995** % FEATURES - 6A PULSE DRAIN CURRENT - FAST SWITCHING SPEED PARTMARKING DETAIL - ZVN2110 COMPLEMENTARY TYPE - ZVP2110G **ABSOLUTE MAXIMUM RATINGS.** ## **ZVN2110G** **==> picture [72 x 67] intentionally omitted <==** **----- Start of picture text -----**
D
S
D
G
**----- End of picture text -----**
**ZVN2110G** ## **TYPICAL CHARACTERISTICS** **==> picture [329 x 295] intentionally omitted <==** **----- Start of picture text -----**
500 500
400 400
300 VDS=25V 300 VDS=25V
200 200
100 100
0 0
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
ID(on)- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
16
100
14 ID=1A
80 12
VDS=
10 20V
60 Ciss 50V
8 80V
40 6
4
20
2
Coss
Crss 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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