# Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

![Product image](https://novapart.co/image/farnell:9525440/)

**URL**: https://novapart.co/products/ZVN2110A/power-mosfet-n-channel-100-v-320-ma-4-ohm-to-226aa
**SKU**: ZVN2110A
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2300
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-226AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 320mA |
| Drain Source On State Resistance | 4ohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9525440/)

## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** 

## **ZVN2110A** 

## **ISSUE 2 – MARCH 94** 

## FEATURES 

- 100 Volt VDS 

- R = 4Ω DS(on) 

## **ABSOLUTE MAXIMUM RATINGS.** 

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|**ABSOLUTE MAXIMUM RATINGS.**||||
|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Drain-Source Voltage|VDS|100|V|
|Continuous Drain Current at Tamb=25°C|ID|320|mA|
|Pulsed Drain Current|IDM|6|A|
|Gate Source Voltage|VGS|±20|V|
|Power Dissipation at Tamb=25°C|Ptot|700|mW|
|Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C|



## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** 

|PARAMETER|SYMBOL|MIN.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|
|Drain-Source  Breakdown<br>Voltage|BVDSS|100||V|ID=1mA, VGS=0V|
|Gate-Source Threshold<br>Voltage|VGS(th)|0.8|2.4|V|ID=1mA, VDS= VGS|
|Gate-Body Leakage|IGSS||20|nA|VGS=±20V, VDS=0V|
|Zero Gate Voltage Drain<br>Current|IDSS||1<br>100|µA<br>µA|VDS=100V, VGS=0<br>VDS=80V, VGS=0V, T=125°C(2)|
|On-State Drain Current(1)|ID(on)|1.5||A|VDS=25V, VGS=10V|
|Static Drain-Source On-State<br>Resistance (1)|RDS(on)||4|Ω|VGS=10V,ID=1A|
|Forward Transconductance<br>(1)(2)|gfs|250||mS|VDS=25V,ID=1A|
|Input Capacitance (2)|Ciss||75|pF|VDS=25 V, VGS=0V, f=1MHz|
|Common Source Output<br>Capacitance (2)|Coss||25|pF||
|Reverse Transfer<br>Capacitance (2)|Crss||8|pF||
|Turn-On Delay Time (2)(3)|td(on)||7|ns|VDD≈25V, ID=1A|
|Rise Time (2)(3)|tr||8|ns||
|Turn-Off Delay Time (2)(3)|td(off)||13|ns||
|Fall Time (2)(3)|tf||13|ns||



(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% 

(2) Sample test 

(3) Switching times measured with 50     source impedance and <5ns rise time on a pulse generator Ω 

## **ZVN2110A** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
VGS= VGS=<br>2.0 10V 2.0 10V<br>9V 9V<br>8V<br>1.6 8V 1.6 7V6V<br>7V<br>1.2 1.2<br>6V 5V<br>0.8 0.8<br>5V<br>4V<br>0.4 4V 0.4<br>3V<br>3V<br>   0    0<br>0 20 40 60 80 100 2 4 6 8 10<br>VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)<br>Output Characteristics  Saturation Characteristics<br>10 2.8<br>2.4<br>8<br>2.0 VDS=25V<br>6 1.6 VDS=10V<br>1.2<br>4<br>ID=<br>1A 0.8<br>2 0.4<br>500mA<br>100mA    0<br>   0<br>0 2 4 6 8 10 0 2 4 6 8 10<br>VGS-Gate Source Voltage  (Volts) VGS-Gate Source Voltage (Volts)<br>Voltage Saturation Characteristics  Transfer Characteristics<br>10 2.4<br>2.2<br>2.0<br>  5 1.8 VGS=10V<br>ID= 1.6 ID=1 A<br>1A    1.4<br>100mA 500mA 1.2 VGS=VDS<br>ID=1mA<br>1.0<br>0.8<br>0.6<br>   1<br>1 10 100 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (°C)<br> On-resistance v gate-source  voltage  Normalised RDS(on) and VGS(th) v Temperature<br>Gate Threshold Voltage VGS(TH)<br>DS(on)<br>Drain-Source Resistance R<br>Voltage (Volts)<br>Drain Source<br>DS-<br>V<br>)(Ω<br>RDS(on)-Drain Source Resistance<br>-On-State Drain Current (Amps)<br>-On-State Drain Current (Amps)<br>D(on)<br> I D(on)<br> I<br>-On-State Drain Current (Amps)<br>D(on)<br> I<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94** 

FEATURES 

- 100 Volt VDS 

- R = 4Ω DS(on) 

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ABSOLUTE MAXIMUM RATINGS.<br>**----- End of picture text -----**<br>


## **ZVN2110A** 

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D  G<br>     S<br>E-Line<br>TO92 Compatible<br>**----- End of picture text -----**<br>


## **ZVN2110A** 

## **TYPICAL CHARACTERISTICS** 

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500<br>400<br>300  VDS=25V<br>200<br>100<br>   0<br>-Transconductance (mS)<br>fs<br>g<br>**----- End of picture text -----**<br>


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500<br>400<br>300  VDS=25V<br>200<br>100<br>   0<br>-Transconductance (mS)<br>fs<br>g<br>**----- End of picture text -----**<br>




## Links

- [View this product on Novapart](https://novapart.co/products/ZVN2110A/power-mosfet-n-channel-100-v-320-ma-4-ohm-to-226aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zvn2110a/mosfet-n-e-line/dp/9525440)
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