# Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:9525041/) **URL**: https://novapart.co/products/ZVN2106G/power-mosfet-n-channel-60-v-700-ma-2-ohm-sot-223 **SKU**: ZVN2106G **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: ā‚¬0.3110 **Stock**: 10+ **Lead Time**: 190 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOT-223 | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150Ā°C | | Continuous Drain Current Id | 700mA | | Drain Source On State Resistance | 2ohm | | Gate Source Threshold Voltage Max | 2.4V | ## Datasheet šŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:9525041/) ## **ZVN2106G** ## **SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** ## **ZVN2106G** ## **ISSUE 3 ā€“ NOVEMBER 1995** ## **TYPICAL CHARACTERISTICS** **==> picture [359 x 478] intentionally omitted <==** **----- Start of picture text -----**
VDD=
4 VGS= 16 20V 30V 50V
10V 14 ID=3A
9V
3 12
8V
10
7V
2 8
6V
6
5V
1 4
4V
2
0 3V 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain Source Voltage (Volts) Q-Charge (nC)
Saturation Characteristics Gate charge v gate-source voltage
100 10
80
60
Ciss 1 ID=
40 0.5A1A
0.25A
20 Coss
Crss
0.1
0 10 20 30 40 50 1 10 20
VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Capacitance v drain-source voltage On-resistance v gate-source voltage
2.4 0.7
2.2
0.6
2.0
1.8 0.5
1.6 VGS=10V 0.4 VDS=10V
1.4 ID=1A
1.2 0.3
1.0 VGS=VDS 0.2
0.8 ID=1mA
0.1
0.6
0
0.4-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5
Tj-Junction Temperature (CĀ°) ID- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
)(ā„¦
-Drain Source On-Resistance
DS(ON)
R
-On-State Drain Current (Amps) -Gate Source Voltage (Volts)
GS
V
D(On)
I
C-Capacitance (pF)
GS(th)
and V
DS(on)
-Transconductance (S)
fs
g
Normalised R
**----- End of picture text -----**
FEATURES - 60 Volt VDS - R =2ā„¦ DS(on) COMPLEMENTARY TYPE - ZVP2106G PARTMARKING DETAIL - ZVN2106 **==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
**----- End of picture text -----**
**==> picture [79 x 69] intentionally omitted <==** **----- Start of picture text -----**
D
S
D
G
**----- End of picture text -----**
## **ZVN2106G** ## **SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** ## **ZVN2106G** ## **ISSUE 3 ā€“ NOVEMBER 1995** ## **TYPICAL CHARACTERISTICS** **==> picture [359 x 478] intentionally omitted <==** **----- Start of picture text -----**
VDD=
4 VGS= 16 20V 30V 50V
10V 14 ID=3A
9V
3 12
8V
10
7V
2 8
6V
6
5V
1 4
4V
2
0 3V 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain Source Voltage (Volts) Q-Charge (nC)
Saturation Characteristics Gate charge v gate-source voltage
100 10
80
60
Ciss 1 ID=
40 0.5A1A
0.25A
20 Coss
Crss
0.1
0 10 20 30 40 50 1 10 20
VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Capacitance v drain-source voltage On-resistance v gate-source voltage
2.4 0.7
2.2
0.6
2.0
1.8 0.5
1.6 VGS=10V 0.4 VDS=10V
1.4 ID=1A
1.2 0.3
1.0 VGS=VDS 0.2
0.8 ID=1mA
0.1
0.6
0
0.4-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5
Tj-Junction Temperature (CĀ°) ID- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
)(ā„¦
-Drain Source On-Resistance
DS(ON)
R
-On-State Drain Current (Amps) -Gate Source Voltage (Volts)
GS
V
D(On)
I
C-Capacitance (pF)
GS(th)
and V
DS(on)
-Transconductance (S)
fs
g
Normalised R
**----- End of picture text -----**
FEATURES - 60 Volt VDS - R =2ā„¦ DS(on) COMPLEMENTARY TYPE - ZVP2106G PARTMARKING DETAIL - ZVN2106 **==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
**----- End of picture text -----**
**==> picture [79 x 69] intentionally omitted <==** **----- Start of picture text -----**
D
S
D
G
**----- End of picture text -----**
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