# Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole ![Product image](https://novapart.co/image/farnell:9525432/) **URL**: https://novapart.co/products/ZVN2106A/power-mosfet-n-channel-60-v-450-ma-2-ohm-to-226aa **SKU**: ZVN2106A **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: ā‚¬0.2300 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power D ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 700mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-226AA | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150Ā°C | | Continuous Drain Current Id | 450mA | | Drain Source On State Resistance | 2ohm | | Gate Source Threshold Voltage Max | 2.4V | ## Datasheet šŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:9525432/) ## **ZVN2106A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 481] intentionally omitted <==** **----- Start of picture text -----**
4 VGS= 2.0
10V 1.8
9V 1.6
3
8V 1.4
7V 1.2
2 1.0
6V 0.8 I1AD=
5V 0.6
1
4V 0.4 0.5A
0.2 0.25A
3V
0 0
0 1 2 3 4 5 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Saturation Characteristics Voltage Saturation Characteristics
4 VDS= 10
10V
3
2 1 ID=
1A
0.5A
0.25A
1
0 0.1
0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 20
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics
On-resistance v gate-source voltage
2.4 0.7
2.2
0.6
2.0
1.8 0.5
1.6 VGS=10V 0.4 VDS=10V
1.4 ID=1A
0.3
1.2
1.0 VGS=VDS 0.2
ID=1mA
0.8
0.1
0.6
0
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5
Tj-Junction Temperature (CĀ°) ID- Drain Current (Amps)
Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(ā„¦
-Drain Source On-Resistance
DS(ON)
R
-On-State Drain Current (Amps)
D(On)
I
-On-State Drain Current (Amps)
D(On)
I
GS(th)
and V
DS(on)
-Transconductance (S)
fs
g
Normalised R
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## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 ā€“ MARCH 94** ## FEATURES **==> picture [58 x 10] intentionally omitted <==** **----- Start of picture text -----**
* 60 Volt VDS
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**==> picture [56 x 11] intentionally omitted <==** **----- Start of picture text -----**
* R =2ā„¦
DS(on)
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ABSOLUTE MAXIMUM RATINGS.
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## **ZVN2106A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
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## **ZVN2106A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 481] intentionally omitted <==** **----- Start of picture text -----**
4 VGS= 2.0
10V 1.8
9V 1.6
3
8V 1.4
7V 1.2
2 1.0
6V 0.8 I1AD=
5V 0.6
1
4V 0.4 0.5A
0.2 0.25A
3V
0 0
0 1 2 3 4 5 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Saturation Characteristics Voltage Saturation Characteristics
4 VDS= 10
10V
3
2 1 ID=
1A
0.5A
0.25A
1
0 0.1
0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 20
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics
On-resistance v gate-source voltage
2.4 0.7
2.2
0.6
2.0
1.8 0.5
1.6 VGS=10V 0.4 VDS=10V
1.4 ID=1A
0.3
1.2
1.0 VGS=VDS 0.2
ID=1mA
0.8
0.1
0.6
0
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5
Tj-Junction Temperature (CĀ°) ID- Drain Current (Amps)
Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(ā„¦
-Drain Source On-Resistance
DS(ON)
R
-On-State Drain Current (Amps)
D(On)
I
-On-State Drain Current (Amps)
D(On)
I
GS(th)
and V
DS(on)
-Transconductance (S)
fs
g
Normalised R
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## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 ā€“ MARCH 94** ## FEATURES **==> picture [58 x 10] intentionally omitted <==** **----- Start of picture text -----**
* 60 Volt VDS
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**==> picture [56 x 11] intentionally omitted <==** **----- Start of picture text -----**
* R =2ā„¦
DS(on)
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**==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
**----- End of picture text -----**
## **ZVN2106A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
**ZVN2106A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 324] intentionally omitted <==** **----- Start of picture text -----**
0.7
100
0.6
80
0.5
0.4 VDS=10V 60
Ciss
0.3 40
0.2
20 Coss
0.1
Crss
0
0 2 4 6 8 10 0 10 20 30 40 50
VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage Capacitance v drain-source voltage
VDD=
20V 30V 50V
16
14 ID=3A
12
10
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Q-Charge (nC)
Gate charge v gate-source voltage
-Transconductance (S) C-Capacitance (pF)
fs
g
-Gate Source Voltage (Volts)
GS
V
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