# Power MOSFET, N Channel, 240 V, 160 mA, 16 ohm, E-Line, Through Hole

![Product image](https://novapart.co/image/farnell:3943939/)

**URL**: https://novapart.co/products/ZVN0124A/power-mosfet-n-channel-240-v-160-ma-16-ohm-e-line
**SKU**: ZVN0124A
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2250
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | E-Line |
| Drain Source Voltage Vds | 240V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 160mA |
| Drain Source On State Resistance | 16ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943939/)

## **ZVN0124A** 

## **TYPICAL CHARACTERISTICS** 

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2.0 1.0 VGS=10V<br>1.8 7V<br>80µs pulse 5V<br>1.6 VGS=10V8V 0.8 4V<br>1.4 6V<br>1.2 5V 0.6<br>1.0<br>3V<br>0.8 4V 0.4<br>0.6<br>0.4 3V 0.2<br>0.2 2V<br>2V   0<br>   0<br>0 20 40 60 80 100 0 2 4 6 8 10<br>VDS-Drain Source Voltage (Volts) VDS-Drain Source Voltage  (Volts)<br> Output Characteristics   Saturation Characteristics<br>20 2.0<br>18 1.8<br>16 1.6<br>14 1.4 VDS=25V<br>12 ID= 1.2<br>10 1A 1.0 VDS=10V<br>8 0.8<br>6 0.6<br>4 500mA 0.4<br>2 0.2<br>   0 100mA    0<br>0 2 4 6 8 10 0 2 4 6 8 10<br>VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)<br> Voltage Saturation Characteristics   Transfer Characteristics<br>100 2.4<br>2.2<br>2.0<br>1.8<br>ID= 1.6 VID=GS=0.25A10V<br>10 1A 1.4<br>500mA 1.2<br>I00mA<br>1.0 VGS=VDS<br>ID=1mA<br>0.8<br>0.6<br>1 0.4<br>1 10 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS-Gate Source Voltage (Volts) Temperature (°C)<br> On-resistance vs gate-source voltage  Normalised RDS(on) and VGS(th) V Temperature<br>Gate Threshold Voltage VGS(th)<br>DS(on)<br>Drain-Source Resistance R<br>(Volts)<br>Drain Source<br>DS-<br>V<br>)(Ω<br>-Drain Source Resistance<br>DS(ON)<br> R<br> On State Drain Current(Amps) On -State Drain Current (Amps)<br> ID(ON)  ID(on) -<br>On-State Drain Current (Amps)<br>D(ON) -<br> I<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 – MARCH 94** 

## FEATURES 

- 240 Volt VDS 

- R =16Ω DS(on) 

## APPLICATIONS 

- Telephone handsets 

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ABSOLUTE MAXIMUM RATINGS.<br>**----- End of picture text -----**<br>


## **ZVN0124A** 

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**----- Start of picture text -----**<br>
D  G<br>     S<br>E-Line<br>TO92 Compatible<br>**----- End of picture text -----**<br>


## **ZVN0124A** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
2.0 1.0 VGS=10V<br>1.8 7V<br>80µs pulse 5V<br>1.6 VGS=10V8V 0.8 4V<br>1.4 6V<br>1.2 5V 0.6<br>1.0<br>3V<br>0.8 4V 0.4<br>0.6<br>0.4 3V 0.2<br>0.2 2V<br>2V   0<br>   0<br>0 20 40 60 80 100 0 2 4 6 8 10<br>VDS-Drain Source Voltage (Volts) VDS-Drain Source Voltage  (Volts)<br> Output Characteristics   Saturation Characteristics<br>20 2.0<br>18 1.8<br>16 1.6<br>14 1.4 VDS=25V<br>12 ID= 1.2<br>10 1A 1.0 VDS=10V<br>8 0.8<br>6 0.6<br>4 500mA 0.4<br>2 0.2<br>   0 100mA    0<br>0 2 4 6 8 10 0 2 4 6 8 10<br>VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)<br> Voltage Saturation Characteristics   Transfer Characteristics<br>100 2.4<br>2.2<br>2.0<br>1.8<br>ID= 1.6 VID=GS=0.25A10V<br>10 1A 1.4<br>500mA 1.2<br>I00mA<br>1.0 VGS=VDS<br>ID=1mA<br>0.8<br>0.6<br>1 0.4<br>1 10 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS-Gate Source Voltage (Volts) Temperature (°C)<br> On-resistance vs gate-source voltage  Normalised RDS(on) and VGS(th) V Temperature<br>Gate Threshold Voltage VGS(th)<br>DS(on)<br>Drain-Source Resistance R<br>(Volts)<br>Drain Source<br>DS-<br>V<br>)(Ω<br>-Drain Source Resistance<br>DS(ON)<br> R<br> On State Drain Current(Amps) On -State Drain Current (Amps)<br> ID(ON)  ID(on) -<br>On-State Drain Current (Amps)<br>D(ON) -<br> I<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 – MARCH 94** 

## FEATURES 

- 240 Volt VDS 

- R =16Ω DS(on) 

## APPLICATIONS 

- Telephone handsets 

**==> picture [153 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
ABSOLUTE MAXIMUM RATINGS.<br>**----- End of picture text -----**<br>


## **ZVN0124A** 

**==> picture [103 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
D  G<br>     S<br>E-Line<br>TO92 Compatible<br>**----- End of picture text -----**<br>


## **ZVN0124A** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
500 500<br>400 VDS= 400<br>25V<br>300 300 VDS=<br>25V<br>200 200<br>100 100<br>  0   0<br>0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 .8 10<br> ID(On)-Drain Current (Amps)   VGS-Gate-Source Voltage (Volts)<br> Transconductance v drain current  Transconductance v gate-source voltage<br>VDS=<br>70 10 50V<br>60 Ciss ID=700mA 100V<br>8 180V<br>50<br>40 6<br>30 4<br>20<br>2<br>10 Coss<br>   0 Crss    0<br>0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VDS -Drain-Source Voltage (Volts) Q-Charge (nC)<br> Gate charge v gate-source voltage<br> Capacitance v drain-source voltage<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>.20 40 60  80 100 120 140 160 180 200<br>Tamb - Ambient Temperature (°C)<br>Power v temperature derating curve (ambient)<br>Voltage (Volts)<br>Gate-Source GS-<br>V<br>-Forward transconductance (mS) fs g -Forward transconductance (mS) fs g<br>C-Capacitance (pF)<br>-Power Dissipation (Watts)<br>D<br>P<br>**----- End of picture text -----**<br>




## Links

- [View this product on Novapart](https://novapart.co/products/ZVN0124A/power-mosfet-n-channel-240-v-160-ma-16-ohm-e-line)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zvn0124a/mosfet-n-ch-240v-0-16a-e-line/dp/3943939)
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