# Bipolar (BJT) Single Transistor, NPN, 50 V, 1 A, 385 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:9525122RL/)

**URL**: https://novapart.co/products/ZUMT619/bipolar-bjt-single-transistor-npn-50-v-1-a-385-mw
**SKU**: ZUMT619
**Manufacturer**: DIODES INC.
**Price**: €0.1620
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:215MHz; Power Dissipation Pd:385mW; DC Collector Current:1A; DC Current Gain hFE:450hFE; Transistor Case

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 385mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 215MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 450hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9525122RL/)

## **Super323  SOT323 NPN SILICON POWER** 

# **(SWITCHING) TRANSISTOR** 

## **ZUMT619** 

## **ISSUE 2 - DECEMBER 2008** 

## FEATURES 

- **500mW POWER DISSIPATION** 

- **IC CONT 1A** 

- 2A Peak Pulse Current 

- Excellent HFE Characteristics Up To 2A (pulsed) 

- Extremely Low Equivalent On Resistance; **RCE(sat)** 

## APPLICATIONS 

- LCD backlighting inverter circuits 

- Boost functions in DC-DC converters 

|DEVICE TYPE|COMPLEMENT|PARTMARKING|**RCE(sat)**|
|---|---|---|---|
|ZUMT619|ZUMT720|T63|**160m**Ω**at 1A**|



## **ABSOLUTE MAXIMUM RATINGS.** 

|PARAMETER|SYMBOL|VALUE|UNIT|
|---|---|---|---|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|50|V|
|Emitter-Base Voltage|VEBO|5|V|
|Peak Pulse Current**|ICM|2|A|
|**Continuous Collector Current**|**IC**|**1.0**|A|
|Base Current|IB|200|mA|
|**Power Dissipation at Tamb=25°C**|**Ptot**|**385 †**<br>**500 ‡**|**mW**|
|Operating and Storage Temperature<br>Range|Tj:Tstg|-55 to +150|°C|



- Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). 

- Maximum power dissipation is calculated assuming that the device is mounted on FR4 

   - size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. 

## **ZUMT619** 

## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** 

|PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|---|
|Collector-Base<br>Breakdown Voltage|V(BR)CBO|50|||V|IC= 100µA|
|Collector-Emitter<br>Breakdown Voltage|V(BR)CEO|50|||V|IC= 10mA*|
|Emitter-Base<br>Breakdown Voltage|V(BR)EBO|5|||V|IE= 100µA|
|Collector Cut-Off<br>Current|ICBO|||10|nA|VCB= 40V|
|Emitter Cut-Off<br>Current|IEBO|||10|nA|VEB= 4V|
|Collector Emitter<br>Cut-Off Current|ICES|||10|nA|VCES= 40V|
|Collector-Emitter<br>Saturation Voltage|VCE(sat)||24<br>60<br>120<br>160|35<br>80<br>200<br>270|mV<br>mV<br>mV<br>mV|IC= 100mA, IB= 10mA*<br>IC= 250mA, IB= 10mA*<br>IC= 500mA, IB= 10mA*<br>IC= 1A, IB= 50mA*|
|Base-Emitter<br>Saturation Voltage|VBE(sat)||940|1100|mV|IC= 1A, IB= 50mA*|
|Base-Emitter<br>Turn-On Voltage|VBE(on)||850|1100|mV|IC= 1A, VCE= 2V*|
|Static Forward<br>Current Transfer<br>Ratio|hFE|200<br>300<br>200<br>75<br>20|420<br>450<br>350<br>130<br>60|||IC=10mA, VCE= 2V*<br>IC= 100mA, VCE=2 V*<br>IC= 500mA, VCE=2V*<br>IC= 1A, VCE= 2V*<br>IC= 1.5A, VCE=2 V*|
|Transition<br>Frequency|fT||215||MHz|IC= 50mA, VCE=10V<br>f= 100MHz|
|Output Capacitance|Cobo||6||pF|VCB= 10V, f=1MHz|
|Turn-On Time|t(on)||150||ns|VCC=10 V, IC= 1A<br>IB1=IB2=100mA|
|Turn-Off Time|t(off)||425||ns||



*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2% 

## **ZUMT619** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [349 x 426] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4 0.4<br>+25°C IC/IB=50<br>0.3 0.3<br>IC/IB=10<br>IC/IB=50<br>IC/IB=100 -55°C<br>0.2 0.2 +100°C+25°C<br>+150°C<br>0.1 0.1<br>0 0<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC - Collector Current (A) IC - Collector Current (A)<br>VCE(sat) v IC VCE(sat) v IC<br>800 VCE=2V 1.0 IC/IB=50<br>0.8<br>600<br>+100°C<br>0.6<br>400 +25°C<br>0.4 -55°C<br>-55°C +25°C<br>200 +100°C<br>0.2 +150°C<br>0 0<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC - Collector Current (A) IC - Collector Current (A)<br>hFE v IC VBE(sat) v IC<br>1.15 10<br>0.9<br>1<br>0.6<br>DC<br>-55°C 100m 100ms1s<br>0.3 +25°C 10ms<br>+100°C 1ms<br>+150°C 100µs<br>0 10m<br>1m 10m 100m 1 10 100m 1 10 100<br>IC - Collector Current (A) VCE - Collector Emitter Voltage (V)<br>VBE(on) v IC Safe Operating Area<br> - (V)  - (V)<br>CE(sat) CE(sat)<br>V V<br> - (V)<br>BE(sat)<br> - Typical Gain V<br>FE<br>h<br> - (V)<br>BE(on)<br>V<br> - Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>




## Links

- [View this product on Novapart](https://novapart.co/products/ZUMT619/bipolar-bjt-single-transistor-npn-50-v-1-a-385-mw)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zumt619/transistor-npn-sot-323/dp/9525122RL)
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