# Bipolar (BJT) Single Transistor, NPN, 300 V, 3 A, 1.2 W, E-Line, Through Hole ![Product image](https://novapart.co/image/farnell:9524967/) **URL**: https://novapart.co/products/ZTX857/bipolar-bjt-single-transistor-npn-300-v-3-a-12-w-e **SKU**: ZTX857 **Manufacturer**: DIODES INC. **Price**: €0.4170 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:80MHz; Power Dissipation Pd:1.2W; DC Collector Current:3A; DC Current Gain hFE:200hFE; Transistor Case St ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 1.2W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 80MHz | | Transistor Case Style | E-Line | | Dc Current Gain Hfe Min | 200hFE | | Operating Temperature Max | 200°C | | Continuous Collector Current | 3A | | Collector Emitter Voltage Max | 300V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9524967/) ZTX857 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL UNIT | CONDITIONS. - . Sig, erty matter - Static Forward ee 100 200 Ic=10mA, Vop=5V Current Transfer 100 200 300 I(=500mA, Vce=10V* Ratio 15 25 Ic=2A, Vop=10V* 15 Ic=3A, Vop=10V* **==> picture [337 x 111] intentionally omitted <==** **----- Start of picture text -----**
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR ZTX857
ISSUE 1 — APRIL 94
FEATURES
* 300 Volt Vceo
|S* per3 Amps continuous current
* Very low saturation voltage
* P =1.2 Watt
tots '* NVA c
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c
E
E-Line
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ZTX857 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL UNIT | CONDITIONS. - . Sig, erty matter - Static Forward ee 100 200 Ic=10mA, Vop=5V Current Transfer 100 200 300 I(=500mA, Vce=10V* Ratio 15 25 Ic=2A, Vop=10V* 15 Ic=3A, Vop=10V* **==> picture [337 x 111] intentionally omitted <==** **----- Start of picture text -----**
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR ZTX857
ISSUE 1 — APRIL 94
FEATURES
* 300 Volt Vceo
|S* per3 Amps continuous current
* Very low saturation voltage
* P =1.2 Watt
tots '* NVA c
**----- End of picture text -----**
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c
E
E-Line
**----- End of picture text -----**
## **��** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 475] intentionally omitted <==** **----- Start of picture text -----**
0.8 1.6
300
1.4
0.6 1.2
1.0 200
0.4 0.8
IC/IB=10 VCE=10V
IC/IB=50 0.6 VCE=2V
100
0.2 0.4
0.2
0 0
0.001 0.01 0.1 1 10 0 0.01 0.1 1 10
I C - Collector Current (Amps) I C - Collector Current (Amps)
VCE(sat) v IC hFE v IC
VCE=5V
2.0 2.0
1.5 1.5
IC/IB=10
IC/IB=50
1.0 1.0
0.5 0.5
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10
I C - Collector Current (Amps) I C - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
10 Single Pulse Test at Tamb=25°C
1
D.C.
0.1 1s
100ms
10ms
1.0ms
0.1ms
0.01
0.1 1 10 100 1000
V CE - Collector Voltage (Volts)
Safe Operating Area
- (Volts)
BE
V
- Collector Current (Amps)
I C
- Typical Gain
FE
h
- (Volts)
CE(sat)
V - Normalised Gain
FE
h
- (Volts)
BE(sat)
V
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