# Bipolar (BJT) Single Transistor, NPN, 100 V, 4 A, 1.58 W, E-Line, Through Hole ![Product image](https://novapart.co/image/farnell:3943340/) **URL**: https://novapart.co/products/ZTX853STZ/bipolar-bjt-single-transistor-npn-100-v-4-a-158-w **SKU**: ZTX853STZ **Manufacturer**: DIODES INC. **Price**: €0.4140 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | ZTX Series | | Qualification | - | | Power Dissipation | 1.58W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 130MHz | | Transistor Case Style | E-Line | | Dc Current Gain Hfe Min | 50hFE | | Operating Temperature Max | 200°C | | Continuous Collector Current | 4A | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3943340/) **==> picture [749 x 135] intentionally omitted <==** **----- Start of picture text -----**
NPN SILICON PLANAR MEDIUM POWER
ZTX853 HIGH CURRENT TRANSISTOR ZTX853
ISSUE 3 - NOVEMBER 1995
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) FEATURES
PARAMETER SYMBOL UNIT | CONDITIONS. * 100 Volt Vceo
- %
See * 4 Amps continuous current
Static- Forward [teere |100 im200 iY [ettI=10mA, Vcop=2V *|* SeeVeryP =1.2lowWatt saturation voltage
Current Transfer 100 | 200 | 300 Ic=2A, Vop=2V* tot |= Valls Ce
Ratio 50 100 Ic4A, Voe=2V* E
20 30 Ic=10A, Vop=2V*
a E-Line
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**==> picture [749 x 135] intentionally omitted <==** **----- Start of picture text -----**
NPN SILICON PLANAR MEDIUM POWER
ZTX853 HIGH CURRENT TRANSISTOR ZTX853
ISSUE 3 - NOVEMBER 1995
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) FEATURES
PARAMETER SYMBOL UNIT | CONDITIONS. * 100 Volt Vceo
- %
See * 4 Amps continuous current
Static- Forward [teere |100 im200 iY [ettI=10mA, Vcop=2V *|* SeeVeryP =1.2lowWatt saturation voltage
Current Transfer 100 | 200 | 300 Ic=2A, Vop=2V* tot |= Valls Ce
Ratio 50 100 Ic4A, Voe=2V* E
20 30 Ic=10A, Vop=2V*
a E-Line
**----- End of picture text -----**
## **��** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 475] intentionally omitted <==** **----- Start of picture text -----**
0.8 1.6
300
1.4
0.6 1.2
1.0 200
0.4 0.8
IC/IB=10 VCE=5V
IC/IB=50 0.6 VCE=1V
100
0.2 0.4
0.2
0 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100
I C - Collector Current (Amps) I C - Collector Current (Amps)
VCE(sat) v IC hFE v IC
VCE=1V
2.0 2.0
1.5 1.5
IC/IB=50
1.0 1.0
0.5 0.5
0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
I C - Collector Current (Amps) I C - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
10 Single Pulse Test at Tamb=25°C
1
D.C.
0.1 1s
100ms
10ms
1.0ms
0.1ms
0.01
0.1 1 10 100
V CE - Collector Voltage (Volts)
Safe Operating Area
- (Volts)
BE
V
- Collector Current (Amps)
I C
- Typical Gain
FE
h
- (Volts)
CE(sat)
V - Normalised Gain
FE
h
- (Volts)
BE(sat)
V
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