# Bipolar (BJT) Single Transistor, NPN, 20 V, 3.5 A, 1 W, E-Line, Through Hole
**URL**: https://novapart.co/products/ZTX618/bipolar-bjt-single-transistor-npn-20-v-35-a-1-w-e
**SKU**: ZTX618
**Manufacturer**: DIODES INC.
**Price**: €0.2510
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:140MHz; Power Dissipation Pd:1W; DC Collector Current:3.5A; DC Current Gain hFE:450hFE; Transistor Case St
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 140MHz |
| Transistor Case Style | E-Line |
| Dc Current Gain Hfe Min | 450hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 3.5A |
| Collector Emitter Voltage Max | 20V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9526528/)
ZTX618
**==> picture [342 x 79] intentionally omitted <==**
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THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:
Junction to Ambient, Rth(j-amb)1 175 °C/W
Junction to Ambient, Rtnij-amb)2t 116 °C/W
t Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
**----- End of picture text -----**
**==> picture [338 x 141] intentionally omitted <==**
**----- Start of picture text -----**
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR ZTX618
ISSUE 2 - JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent he, characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* Io cont 3.54
APPLICATIONS c.
* Power MOSFET gate driver in conjunction with ;
complementary ZTX718 E-Line
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Ic=100 µ A
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C / B =50
_S 03 100°C
C B 25°C
C B
C / B =10 2 -55°C
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Ic=100 µ A
**==> picture [222 x 55] intentionally omitted <==**
**----- Start of picture text -----**
C / B =50
_S 03 100°C
C B 25°C
C B
C / B =10 2 -55°C
**----- End of picture text -----**
ZTX618
**==> picture [342 x 79] intentionally omitted <==**
**----- Start of picture text -----**
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:
Junction to Ambient, Rth(j-amb)1 175 °C/W
Junction to Ambient, Rtnij-amb)2t 116 °C/W
t Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
**----- End of picture text -----**
**==> picture [338 x 141] intentionally omitted <==**
**----- Start of picture text -----**
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR ZTX618
ISSUE 2 - JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent he, characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* Io cont 3.54
APPLICATIONS c.
* Power MOSFET gate driver in conjunction with ;
complementary ZTX718 E-Line
**----- End of picture text -----**
## Links
- [View this product on Novapart](https://novapart.co/products/ZTX618/bipolar-bjt-single-transistor-npn-20-v-35-a-1-w-e)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/ztx618/transistor-npn-e-line/dp/9526528)
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