# Bipolar Transistor Array, Dual Complementary High Gain, Complementary NPN and PNP, 40 V, 40 V, 2 A

![Product image](https://novapart.co/image/farnell:1471150RL/)

**URL**: https://novapart.co/products/ZDT6790TA/bipolar-transistor-array-dual-complementary-high
**SKU**: ZDT6790TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.4830
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:2.75W; DC Collector Current:2A; DC Current Gain hFE:500hFE; Transistor Case Style:SOT-223; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Complementary NPN and PNP |
| Power Dissipation Npn | 2.75W |
| Power Dissipation Pnp | 2.75W |
| Transistor Case Style | SOT-223 |
| Transition Frequency Npn | 150MHz |
| Transition Frequency Pnp | 100MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 500hFE |
| Dc Current Gain Hfe Min Pnp | 500hFE |
| Continuous Collector Current Npn | 2A |
| Continuous Collector Current Pnp | 2A |
| Collector Emitter Voltage Max Npn | 40V |
| Collector Emitter Voltage Max Pnp | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1471150RL/)

**ZDT6790 Green COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8 PACKAGE** 

## **Features** 

## **Mechanical Data** 

- NPN Transistor 

   - BVCEO > 45 

   - VCE(sat) < 100mV @ IC= 100mA 

   - Continuous Current IC = 2A 

- PNP Transistor 

   - BVCEO > -40V 

   - VCE(sat) < -250mV @ IC= -500mA 

      - Case: SM-8 (8 LEAD SOT223) 

      - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

      - Moisture Sensitivity: Level 1 per J-STD-020 

      - Terminals: Finish - Matte Tin Plated Leads; Solderable per MILSTD-202, Method 208 

      - Weight: 0.117 grams (Approximate) 

   - Continuous Current IC = -2A 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SM-8<br>C1<br>Cy Bi NPN PNP<br>~af Cy E, NPN B1 B2<br>C2 B2<br>} PNP<br>~ s C2 E2 =<br>Top View  Top View  Equivalent Circuit<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|ZDT6790TA|T6790|7|12|1,000|
|ZDT6790TC|T6790|13|12|4,000|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SM-8 

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T6790 = Product Type Marking Code<br>ZETEX  YWW = Date Code Marking<br>Y or Y = Last Digit of Year (ex: 5= 2015)<br>T6790  YWW WW or WW = Week Code (01~53)<br>**----- End of picture text -----**<br>


1 of 9 **www.diodes.com** 

ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

**ZDT6790** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|NPN|PNP|Unit|
|Collector-Base Voltage|VCBO|45|-50|V|
|Collector-Emitter Voltage|VCEO|45|-40|V|
|Emitter-Base Voltage|VEBO|7|-7|V|
|Continuous Collector Current|IC|2|-2|A|
|Peak Pulse Current (Note 5)|ICM|6|-6|A|

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## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|(Note 5)|2.25|
|Collector Power Dissipation|PD|W|
|(Note 6)|2.75|
|(Note 5)|55.60|
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|45.50|°C/W|
|Thermal Resistance, Junction to Leads|(Note 7)|RθJL|30.68|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|

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||||||
|---|---|---|---|---|
|ESD Ratings|(Note 8)|
|Characteristic|Symbol|Value|Unit|JEDEC Class|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|

**----- End of picture text -----**<br>


Notes: 5. For a device with any single die active and mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 

6. Same as Note 5, except both die are active and equally sharing power. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

**ZDT6790** 

## **Thermal Characteristics and Derating Information** 

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10 10<br>RCE(SAT) RCE(SAT)<br>Limited Z AP| Jari il) SwSOWINIA RT\/)UT AY Limited eo,ZIW~INIOA/\Se SNE Gee/ YIUe<br>1 1<br>DC DC<br>pT 1s J | INT NISRA pT | [7 |)<br>PP 1s OANA OUMAAANL<br>100m pL 100ms A SRNSAN I 100m p Ta 100ms NNA AS|<br>10ms 10ms<br>pA One active die po One active die<br>Single Pulse 1ms Single Pulse 1ms<br>10m Tamb=25°C 100us 10m Tamb=25°C 100us<br>One| ne ame<br>0.1 1 10 0 .1 1 10<br>VCE  Collector-Emitter Voltage (V) -VCE  Collector-Emitter Voltage (V)<br>NPN Safe Operating Area PNP Safe Operating Area<br>3.0<br>Two active die<br>50 TM nn 2.5 Po<br>CTE ECT NG aan<br>One active die<br>40 OT A AAM 2.0 Pp Tree<br>B01 AR a = TN NS ao<br>BAR A eM PNK<br>D=0.5<br>30 1.5<br>nal LTO PNR<br>Single Pulse<br>20 Sema ti SU 1.0 ee<br>CCT AeA TN l PO A<br>CF D=0.2 A D=0.05 ee N<br>10 0.5<br>eee tttATH<br>D=0.1<br>cece Nl lll Nee<br>100µ0 scans 1m 10m 100m [A] UE 1 10 100 1k 0.00 aa 25 50 75 100 125 150<br>Pulse Width (s)  Temperature (°C)<br>Thermal Resistance (°C/W)<br>  Collector Current (A)IC   Collector Current (A)-IC<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

## **Derating Curve** 

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Single Pulse<br>100 Da A T amb =25°C Mill<br>PTT TT TT TTT TTT<br>a|<br>UHHH SEPT<br>10 US<br>PTT TTT TTT TTT AAT TTT TTT<br>le<br>1 BN A<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Maximum Power (W)<br>**----- End of picture text -----**<br>


**Pulse Power Dissipation** 

3 of 9 **www.diodes.com** 

ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

**ZDT6790** 

**NPN - Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage|BVCBO|45|—|—|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~re~~|BVCEO<br>~~re~~|45<br>~~re~~|—<br>~~re~~|—<br>~~re~~|V<br>~~re~~|IC= 10mA<br>~~re~~|
|Emitter-Base Breakdown Voltage<br>~~re~~|BVEBO<br>~~re~~|7<br>~~re~~|—<br>~~re~~|—<br>~~re~~|V<br>~~re~~|IE= 100µA<br>~~re~~|
|Collector Cut-Off Current<br>~~BS~~|ICBO<br>~~BS~~|—<br>~~BS~~|—<br>~~BS~~|100<br>~~BS~~|nA<br>~~BS~~|VCB= 35V<br>~~BS~~|
|Emitter Cut-Off Current<br>~~BS~~<br>~~ee~~|IEBO<br>~~BS~~<br>~~eee~~|—<br>~~BS~~<br>~~eee~~|—<br>~~BS~~<br>~~eee~~|100<br>~~BS~~<br>~~eee~~|nA<br>~~BS~~<br>~~eee~~|VEB= 6V<br>~~BS~~<br>~~eee~~|
|DC Current Transfer Static Ratio (Note 9)<br>~~ee~~|hFE<br>~~eee~~|500<br>400<br>150<br>~~eee~~|—<br>—<br>—<br>~~eee~~|—<br>—<br>—<br>~~eee~~|—<br>~~eee~~|IC= 100mA, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 2A,VCE= 2V<br>~~eee~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~ee ~~<br>~~a~~|VCE(sat)<br> ~~eee~~|—<br>—<br>~~eee~~|—<br>—<br>~~eee~~|100<br>500<br>~~eee ~~|mV<br> ~~eee~~|IC= 100mA, IB= 0.5mA<br>IC= 1A,IB= 5mA<br>~~eee~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~re~~|VBE(sat)<br>~~re~~|—<br>~~re~~|—<br>~~re~~|900<br>~~re~~|mV<br>~~re~~|IC= 1A,IB= 10mA<br>~~re~~|
|Base-Emitter Turn-on Voltage(Note 9)<br>~~re~~|VBE(on)<br>~~re~~|—<br>~~re~~|—<br>~~re~~|900<br>~~re~~|mV<br>~~re~~|IC= 1A,VCE= 2V<br>~~re~~|
|Transitional Frequency (Note 9)<br>~~ee~~|fT<br>~~ee~~|150<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|MHz<br>~~ee~~|IC= 50mA, VCE= 5V,<br>f = 50MHz<br>~~ee~~|
|Input Capacitance<br>~~ON~~|Cibo<br>~~ON~~|—<br>~~ON~~|200<br>~~ON~~|—<br>~~ON~~|pF<br>~~ON~~|VEB = 0.5V,f = 1MHz<br>~~ON~~|
|Output Capacitance<br>~~ON~~|Cobo<br>~~ON~~|—<br>~~ON~~|16<br>~~ON~~|—<br>~~ON~~|pF<br>~~ON~~|VCB = 10V,f = 1MHz<br>~~ON~~|
|Switching Time<br>~~ee~~|ton<br>~~ee~~|—<br>~~ee~~|33<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|VCC = 10V, IC= 500mA,<br>IB1= 50mA,IB2= 50mA<br>~~ee~~|
||toff<br>~~ee~~||1,300<br>~~ee~~||ns<br>~~ee~~||



Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. 

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ZDT6790 Document number: DS33210 Rev. 3 - 2 

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**ZDT6790** rs 

**NPN – Typical Electrical Characteristics** 

## LDL 

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=] 1.0<br>Tamb=25°C I C /I B =100 -55°C<br>SMGee siete atll 0.8 Re|<br>100m a IC/IB=200 Wi 0.6 pene ee 25 ° C IfHY<br>I C /I B =100 0.4 100°C<br>10m<br>IC/IB=10 0.2<br>aa niaeeea rye Gan nia | A<br>1m EET tt 0.0 eset<br>1m 10m 100m 1 10 1m 10m 100m 1 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1 000<br>1.2 SeSerna V CE =2V a 9 00 1.0 I C /I B =100 cna<br>Sy 100°C 8 00 yl<br>1.0 maetsLU TIN PTTI 7 00 0.8 Bil -55°C HMApeHE y<br>0.8 il 25°C 600 Ill<br>itl. 1h 5 00 ne = pr<br>25°C<br>0.6<br>4 00<br>0.6<br>0.4 SSSISeti oad -55°C mccoyNRA Co 3 00 TY.TL aA 100°C J<br>TN ITeT<br>mama 2 00 CTI<br>0.2 FEAT FHAa NNEI 100 0.4 STaati<br>0.01m CF 10m  rr 100m 1 10 0 1m PUI 10m LT 100m EINE 1 TT 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =2V<br>SR TH A<br>A<br>0.8 -55°C<br>rtAll<br>25°C<br>0.6 A<br>I ee<br>100°C<br>A eo<br>0.4<br>a att |<br>TUM TET ETI ETH<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


5 of 9 **www.diodes.com** 

ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

**ZDT6790** 

**PNP - Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~ee~~|**Min**<br>~~ee~~<br>~~ee~~|**Typ**<br>~~ee~~<br>~~ee~~|**Max**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|**Test Condition**<br>~~ee~~|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage<br>~~ee~~|BVCBO<br>~~ee~~<br>~~ee~~|-50<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|IC= -100µA<br>~~ee~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~ee~~|BVCEO<br>~~ee ~~<br>~~ee~~|-40<br> ~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|IC= -10mA<br>~~ee~~|
|Emitter-Base Breakdown Voltage<br>~~ee~~|BVEBO<br>~~ee~~|-7<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|IE= -100µA<br>~~ee~~|
|Collector Cut-Off Current|ICBO|—<br>~~ee ~~|—<br> ~~ee ~~|-100<br> ~~ee ~~|nA<br> ~~ee~~|VCB= -30V|
|Emitter Cut-Off Current|IEBO|—|—|-100|nA|VEB= -6V|
|DC Current Transfer Static Ratio (Notes 9)<br>~~eee~~|hFE<br>~~eee~~|300<br>250<br>200<br>150<br>~~eee~~<br>~~}~~|—<br>—<br>—<br>—<br>~~eee~~<br>~~}|~~|800<br>—<br>—<br>—<br>~~eee~~<br>~~||}~~|—<br>~~eee~~<br>~~|}~~|IC= -10mA, VCE= -2V<br>IC= -500mA, VCE= -2V<br>IC= -1A, VCE= -2V<br>IC= -2A,VCE= -2V<br>~~eee~~<br>~~|}~~|
|Collector-Emitter Saturation Voltage (Notes 9)<br>~~|}~~|VCE(sat)<br>~~|}~~|—<br>~~|}~~<br>~~}~~|—<br>—<br>—<br>~~|}~~<br>~~}|~~|-250<br>-450<br>-750<br>~~|}~~<br>~~||}~~|mV<br>~~|}~~<br>~~|}~~|IC= -500mA, IB= -5mA<br>IC= -1A, IB= -10mA<br>IC= -2A,IB= -50mA<br>~~|}~~<br>~~|}~~|
|Base-Emitter Saturation Voltage(Notes 9)<br>~~|}~~<br>~~Se~~|VBE(sat)<br>~~|}~~<br>|—<br>~~|}~~<br>~~}~~<br>|—<br>~~|}~~<br>~~}|~~<br>|-1,000<br>~~|}~~<br>~~||}~~<br>~~(OR~~<br>|mV<br>~~|}~~<br>~~|}~~<br>~~OO~~<br>|IC= -1A,IB= -10mA<br>~~|}~~<br>~~|}~~|
|Base-Emitter Turn-on Voltage(Notes 9)<br>~~GG~~<br>~~Se~~|VBE(on)<br>~~GG~~<br>|—<br>~~}~~<br>~~GG~~<br>|-750<br>~~}|~~<br>~~GG~~<br>|—<br>~~||}~~<br>~~GG~~<br>~~(OR~~<br>|mV<br>~~|}~~<br>~~GG~~<br>~~OO~~<br>|IC= -1A,VCE= -2V<br>~~|}~~<br>~~GG~~|
|Transitional Frequency (Notes 9)<br>~~Se ~~|fT<br> ~~OG~~<br>~~e~~|100<br>~~}~~<br>~~OG~~<br>~~ee~~|—<br>~~} |~~<br>~~OG~~<br>~~ee~~|—<br>~~| |}~~<br>~~(OR~~<br>~~OG~~<br>~~ee~~|MHz<br>~~|}~~<br>~~OO~~<br>~~OG~~<br>~~ee~~|IC= -50mA, VCE= -5V,<br>f = 50MHz<br>~~|}~~|
|Input Capacitance<br>~~Se ~~<br>~~ee~~|Cibo<br> <br>~~ee~~<br>~~e~~|—<br><br>~~ee~~<br>~~ee~~|225<br><br>~~ee~~<br>~~ee~~|—<br>~~(OR ~~<br><br>~~ee~~<br>~~ee~~|pF<br> ~~OO~~<br><br>~~ee~~<br>~~ee~~|VEB = -0.5V,f = 1MHz,<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Cobo<br>~~ee~~<br>~~e~~<br>~~ces~~|—<br>~~ee~~<br>~~ee~~<br>~~Oe~~|24<br>~~ee~~<br>~~ee~~<br>~~Oe~~|—<br>~~ee~~<br>~~ee~~<br>~~Oe~~|pF<br>~~ee~~<br>~~ee~~<br>~~eee~~|VCB = -10V,f = 1MHz,<br>~~ee~~|
|Switching Time<br>~~a~~|ton<br>~~e~~<br>~~a~~<br>~~ces~~|—<br>~~ee ~~<br>~~a~~<br>~~Oe~~|35<br> ~~ee ~~<br>~~a~~<br>~~Oe~~|—<br> ~~ee ~~<br>~~a~~<br>~~Oe~~|ns<br> ~~ee~~<br>~~a~~<br>~~eee~~|VCC = -10V, IC= -500mA,<br>IB1= -50mA,IB2= -50mA<br>~~a~~|
||toff<br>~~a~~<br>~~ces~~||600<br>~~a~~<br>~~Oe~~||ns<br>~~a~~<br>~~eee~~||



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ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

lmLDLcoRPORAT & 

**ZDT6790** rid 

## **PNP – Typical Electrical Characteristics** 

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1 1.0<br>Tamb=25°C 0.8 I C /I B =100 -55°C<br>ST AA HHH hy ich| |<br>100m<br>0.6<br>25°C<br>TTI I C /I B =100 TIN | eg | PCIE TE Err<br>0.4<br>100°C<br>10m I C /I B =40<br>debe | II fH 0.2 SOc<br>IC/IB=10<br>0.0<br>1m 10m 100m 1 10 1m 10m 100m 1<br>-IC   Collector Current (A) -IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.4 6 30<br>== 100°C VCE=-2V 1.0 I C /I B =100 Coo<br>1.2 5 40<br>SramTT NUTTea +nu|<br>1.0 POIll <!TT 4 50 0.8 aalla pe Va<br>0.8 SHE 25°C a 3 60 ooh -55°C aot PP A,<br>TAT eee py<br>0.6 SNlll "SP SN FH 2 70 0.6 = all  sci 1ZA<br>25°C<br>0.4 TT -55°C ST 1 80 =, Tet rH<br>A ae milli 100°C P|<br>0.2 lll PTT NAAT 9 0 0.4 | | ee] | Seen<br>0.0 0 | 0 PEUTICETT EU<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>-IC   Collector Current (A) -IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =-2V<br>corny a<br>0.8<br>|RSSCATT<br>ap ANI<br>-55°C<br>0.6<br>ye 25°C fePeoTMa TT<br>est<br>0.4 100°C<br>agTT atl Sr Co<br>0.2 CO Co CE Co<br>1m 10m 100m 1 10<br>-IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>-V -V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>-V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>-V<br>**----- End of picture text -----**<br>


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ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

**ZDT6790** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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A1<br>A<br>| FEEEFEFS, Seating Plane<br>SM-8<br>Dim  Min  Max  Typ<br>D - ———— A  -- 1.70  1.60<br>A1  0.02  0.10  0.04<br>e1<br>b  0.70 0.90 0.80<br>Jeo) iy EERE c  0.24  0.32  0.28<br>L D  6.30 6.70 6.60<br>e  1.53 REF<br>e1  4.59 REF<br>r Pe} fT] ttf ! ' pf<br>E  6.70  7.30  7.00<br>ø<br>E1  3.30  3.70  3.50<br>| T e a<br>E E1 L  0.75  1.00  0.90<br>Ø  - -  45°<br>Ø1  - 15° -<br>ee ø1 c == Ø2  - - 10°<br>All Dimensions in mm<br>» U U LE a<br>ee b e r al ø2<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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**----- Start of picture text -----**<br>
fly Y<br>nnn C1<br>Y1<br>:<br>TEP EyL<br>X C<br>**----- End of picture text -----**<br>


**==> picture [107 x 56] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C 1.52<br>C1  4.6<br>X  0.95<br>Y  2.80<br>Y1  6.80<br>**----- End of picture text -----**<br>


8 of 9 **www.diodes.com** 

ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 

**ZDT6790** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

ZDT6790 Document number: DS33210 Rev. 3 - 2 

October 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZDT6790TA/bipolar-transistor-array-dual-complementary-high)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zdt6790ta/transistor-npn-pnp-sm-8/dp/1471150RL)
---

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