# Bipolar Transistor Array, Dual NPN, 25 V, 5 A, 2.75 W

![Product image](https://novapart.co/image/farnell:3944354/)

**URL**: https://novapart.co/products/ZDT1049TA/bipolar-transistor-array-dual-npn-25-v-5-a-275-w
**SKU**: ZDT1049TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.5170
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 2.75W |
| Power Dissipation Pnp | - |
| Transistor Case Style | SM8 |
| Transition Frequency Npn | 180MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 35hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 5A |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 25V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944354/)

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS 

ZDT1049 

ISSUE 1 - JANUARY 1996 

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|||
|---|---|
|Ci|Bi|
|Ci|Ei|
|C2|B2|
|C2|E2|

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## PARTMARKING DETAIL - T1049 

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SM-8<br>(8 LEAD SOT223)<br>**----- End of picture text -----**<br>


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|||||
|---|---|---|---|
|ABSOLUTE|MAXIMUM|RATINGS.|
|PARAMETER|SYMBOL|VALUE|UNIT|
|———SSSSS~*~‘iSSSSC*dCSC|
|Base Current|Sm|

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## THERMAL CHARACTERISTICS 

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||||||||
|---|---|---|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|TotalAny|singlePowerdieDissipation“on”|at Ts,= 25°C*|Prot|2.25|WwW|
|Both|die|“on”|equally|2.75|Ww|
|Derate|above|25°C*|
|Any|single|die|“on”|18|mW/ °C|
|Both|die|“on”|equally|22|mW/|°C|
|Thermal|Resistance|-|Junction|to|Ambient*|
|Any|single|die|“on”|°C/W|
|Both|die|“on”|equally|°C/W|

**----- End of picture text -----**<br>


* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 

3 - 360 

|ELECTRICALCHARACTERISTICS (atTamp|ELECTRICALCHARACTERISTICS (atTamp|ELECTRICALCHARACTERISTICS (atTamp|Tamp= 25°C unless|Tamp= 25°C unless|Tamp= 25°C unless|otherwise stated).|
|---|---|---|---|---|---|---|
|PARAMETER|SYMBOL|fen.|rye.|(Max.|UNIT||CONDITIONS.|
|Collector-Base Breakdown|ViBr)cBo|ViBr)cBo||||Vv|Ic=100pA|
|Voltage|||||||
|Collector-Emitter|Veces||||v|Ic=100A|
|Breakdown Voltage|||||||
|Collector-Emitter|VcEO||||Vv|Ic=10MA|
|Breakdown Voltage|||||||
|Collector-Emitter|Vcev||||Vv|ic=100HA, Vep=1V|
|Breakdown Voltage|||||||
|Emitter-Base Breakdown =|VigryEBO|VigryEBO||8.75||Vv|[E=100pA|
|Voltage|||||||
|Collector Emitter Cut-Off|Ices||||nA|VcEs=50V|
|Current|||||||
|Collector-Emitter Saturation|VcE(sat}<br>Voltage||||45<br>80|mV<br>mV|{c=0.5A, lp=10mA*<br>Ic=1A, lp=10MA*|
|||||180|mV|Ic=2A, Igp=10mA*|
|||||220|mV|Ic=4A, Ip=50mA*|
|Base-Emitter|VaEisat}||890||mV|[c=4A, Ip=50mA*|
|Saturation Voltage|||||||
|Base-Emitter Turn-On|VBE(on}||||mV|Ic=4A, Vop=2V*|
|Voltage|||||||
|Static Forward Current|hee|250|430|||Ic=10mA, VcE=2V*|
|Transfer Ratio||300|450|||Ic=0.5A, Voe=2V*|
|||300|450|||Ic=1A, Vog=2V*|
|||200|350|||Ic=4A, Vcg=2V*|
|||35|70|||Ic=20A, Vcp=2V*|
|Transition Frequency<br>fr||||||Ic=50mA, Vcg=10V|
|||||||f=50MHz|



*Measured under pulsed conditions. Pulse width=300us. Duty cycle < 2% 

3 - 361 

## TYPICAL CHARACTERISTICS 

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