# MOS N 60V 21.6A 6.3MOHM PMPAK5X6

![Product image](https://novapart.co/image/farnell:4461788/)

**URL**: https://novapart.co/products/XP6NA6R3MT/mos-n-60v-216a-63mohm-pmpak5x6
**SKU**: XP6NA6R3MT
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2280
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461788/)

## **XP6NA6R3MT** ~~Po~~ **Halogen-Free Product** _**N-CHANNEL ENHANCEMENT MODE**_ 

_**POWER MOSFET**_ 

**==> picture [221 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
D BVDSS 60V<br>RDS(ON) 6.3m Ω<br>G<br>S D<br>D<br>D<br>D<br>process<br>and fast<br>an extreme<br>S<br>converters<br>with backside<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP6NA6R3 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~es~~<br>~~es~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~es~~<br>~~es~~<br>~~es~~|Drain-Source Voltage<br>~~Ge~~|60<br>~~Ge~~|V<br>~~Ge~~|
|VGS<br>~~es~~<br>~~es~~|Gate-Source Voltage<br>~~Ge~~|+<br>20<br>~~Ge~~|V<br>~~Ge~~|
|ID@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V<br>~~Ge~~|68<br>~~Ge~~|A<br>~~Ge~~|
|ID@TC=100℃<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V|43|A|
|ID@TA=25℃<br>~~es~~<br>~~a~~<br>~~es~~|Drain Current, VGS@ 10V3|21.6|A|
|ID@TA=70℃<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V3|17.3|A|
|IDM<br>~~es~~<br>~~es~~<br>~~es~~|Pulsed Drain Current1|200|A|
|PD@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation<br>|50<br>|W<br>|
|PD@TA=25℃<br>~~es~~<br>~~es~~|Total Power Dissipation3<br>|5<br>|W<br>|
|EAS<br>~~esI~~|Single Pulse Avalanche Energy4<br>~~I~~|80<br>~~I~~|mJ<br>~~I~~|
|TSTG<br>~~a~~<br>~~es~~|Storage Temperature Range<br>~~a~~|-55 to 150<br>~~a~~|℃<br>~~a~~|
|TJ<br>~~es~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|2.5|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202311211YAGEO** 

**XP6NA6R3MT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V, ID=250uA<br>~~ee~~|60<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~eee~~|
|RDS(ON)<br>~~ee~~|Static Drain-Source On-Resistance2<br>~~ee~~|VGS=10V, ID=20A<br>~~ee~~|-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|6.3<br>~~ee~~<br>~~eee~~|mΩ<br>~~ee~~<br>~~eee~~|
|||VGS=6V, ID=12A<br>~~ee~~|-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|11<br>~~ee~~<br>~~eee~~|mΩ<br>~~ee~~<br>~~eee~~|
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, ID=250uA<br>~~ee~~|2<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|4<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~eee~~|
|gfs<br>~~a~~|Forward Transconductance<br>|VDS=5V, ID=20A<br>~~O~~~~**O**~~|-<br>~~**O**~~|48<br>~~**O**~~|-|S|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~<br>|VDS=48V, VGS=0V<br>~~a~~<br>~~O~~~~**O**~~|-<br>~~a~~<br>~~**O**~~|-<br>~~a~~<br>~~**O**~~|25<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~O~~~~**O**~~<br>~~O~~|-<br>~~**O**~~|-<br>~~**O**~~|+<br>0.1|uA|
|Qg<br>~~a ~~<br>~~ai~~|Total Gate Charge5<br> ~~a~~<br>~~ai~~|ID=20A<br>VDS=30V<br>VGS=10V<br>~~O~~~~**O**~~<br>~~O~~<br>~~ai~~<br>~~a~~|-<br>~~**O**~~<br>~~ai~~|35<br>~~**O**~~<br>~~ai~~<br>~~a~~|56<br>~~ai~~<br>~~a~~|nC<br>~~ai~~<br>~~a~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge5<br>~~a~~||-<br>~~a~~<br>~~a~~<br>~~es~~|10<br>~~a~~<br>~~a~~|-<br>~~a~~|nC<br>~~a~~|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge5||-<br>~~es~~<br>~~es~~|9|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime5|VDS=30V<br>ID=20A<br>RG=10Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|13|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time5||-<br>~~es~~<br>~~es~~<br>~~es~~|45|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime5||-<br>~~es~~<br>~~es~~<br>~~es~~|34|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time5||-<br>~~es~~<br>~~es~~<br>~~es~~|55|-|ns|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance5|VGS=0V<br>VDS=50V<br>f=1.0MHz|-<br>~~es~~<br>~~es~~|1850|2960|pF|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance5||-<br>~~es~~<br>~~i~~<br>~~es~~|315|-|pF|
|Crss<br>~~a~~|Reverse Transfer Capacitance5||-<br>~~es~~|20|-|pF|
|Rg<br>~~a~~<br>~~a ~~|Gate Resistance<br> ~~a~~|f=1.0MHz|-<br>~~es~~|1.2|2.4|Ω|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time5|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|30|-|ns|
|Qrr|Reverse RecoveryCharge5||-|21|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25 Ω , VGS=10V 

- 5.Guaranteed by design. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP6NA6R3MT** 

**==> picture [187 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
210<br>10V<br>180 Y=] T C =25 [o] C 9.0V<br>8.0V<br>7.0V<br>150<br>120 V  GS  =6.0V<br>90 pa<br>60<br>30<br>0<br>0 2 4 6 8 10<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics<br>12<br>I D =12A<br>T  C =25 [o] C<br>10<br>BA<br>8<br>6<br>4 SS<br>4 6 8 10<br>V GS  Gate-to-Source Voltage (V)<br>             Fig 3. On-Resistance  v.s. Gate Voltage<br>60<br>50<br>40<br>30<br>T j =150 [o] C T j =25 [o] C<br>20<br>10<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>V SD  , Source-to-Drain Voltage (V)<br> , Drain Current (A)<br>ID<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)IS<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**==> picture [192 x 612] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>T  C =150 [o] C 10V<br>100 Fea 9.0V<br>8.0V<br>7.0V<br>80 V GS  =6.0V<br>60<br>40<br>20<br>0<br>0 2 4 6<br>V DS  , Drain-to-Source Voltage (V)<br>           Fig 2. Typical Output Characteristics<br>2.4<br>I D =20A<br>V GS =10V<br>2<br>1.6 GLE<br>1.2<br>0.8<br>0.4 Let<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature ( [o] C)<br>            Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>2<br>I D =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T j  ,Junction Temperature (  [o] C)<br> , Drain Current (A)<br>ID<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 2. Typical Output Characteristics** 

## **Fig 4. Normalized On-Resistance v.s. Junction Temperature** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP6NA6R3MT** 

**==> picture [417 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
f=1.0MHz<br>12 3000<br>I D =20A<br>10 V DS =30V 2500<br>8 2000<br>eee C iss<br>6 1500 +<br>4 1000<br>2 500<br>PD C oss<br>C rss<br>0 0 ee<br>0 10 20 30 40 50 1 21 41 61 81<br>Q G  , Total Gate Charge (nC) V DS   ,Drain-to-Source Voltage (V)<br>                Fig 7. Gate Charge Characteristics       Fig 8. Typical Capacitance Characteristics<br>1000 1<br>Duty factor=0.5<br>100 O or peration in this areaeration in this area Fg Te EETPHPH<br>limited by R DS(ON)<br>0.2<br>10us<br>0.1<br>10 0.1<br>eee |<br>100us 0.05<br>! i aN H a PDMDM |<br>0.02 t<br>1 awewe SSE 1ms LAI 0.01 T<br>10ms<br>T C =25 =25 [[o]] C Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TCj = PDM x Rthjc + TC = PDM x Rthjc + TCDM x Rthjc + TC x Rthjc + TCthjc + TC + TCC<br>Single Pulse DC<br>0.1 eRPEPBP 0.01<br>0.1 1 10 OS 100 0.00001 PAPIMIUTETa 0.0001 0.001 0.01 0.1 un 1 ul 10<br>V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjcthjc<br>(A)<br>ID D<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**==> picture [414 x 390] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1<br>Duty factor=0.5<br>100 O or peration in this areaeration in this area Fg Te EETPHPH<br>limited by R DS(ON)<br>0.2<br>10us<br>0.1<br>10 0.1<br>eee |<br>100us 0.05<br>! i aN H a PDMDM<br>0.02 t<br>1 awewe SSE 1ms LAI 0.01 T<br>10ms<br>T C =25 =25 [[o]] C Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TCj = PDM x Rthjc + TC = PDM x Rthjc + TCDM x Rthjc + TC x Rthjc + TCthjc + TC + TCC<br>Single Pulse DC<br>0.1 eRPEPBP 0.01<br>0.1 1 10 OS 100 0.00001 PAPIMIUTETa 0.0001 0.001 0.01 0.1 un 1<br>V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>             Fig 9. Maximum Safe Operating Area   Fig 10. Effective Transient Thermal Impedance<br>100 120<br>V DS =5V<br>100<br>80<br>ee eee ee<br>80<br>60<br>60<br>40<br>40<br>T j =150 [o] C<br>20 T  j =-55 [o] C<br>20<br>T j =25 [o] C<br>0 0<br>25 eee 50 75 100 125 150  Se 0 Gee 2 4 eee 6 8 10<br>T C  , Case Temperature (  [o] C ) V GS , Gate-to-Source Voltage (V)<br>)thjcthjc<br>(A)<br>ID D<br>Normalized Thermal Response (R<br> , Drain Current (A)ID  , Drain Current (A)ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP6NA6R3MT** 

**==> picture [427 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 60<br>T j =25 [o] C<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>6.0V<br>10<br>V GS =10V 10<br>0 elma 0<br>0 20 40 60 80 100 120 140 0 50 100 150<br>I D  , Drain Current (A) T C , Case Temperature( [o] C)<br>              Fig 13. Typ. Drain-Source on State               Fig 14. Total Power Dissipation<br>            Resistance<br>2<br>I D =1mA<br>1.6<br>1.2<br>0.8 FEEEEEGE<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>DSS<br>Normalized BV<br>**----- End of picture text -----**<br>


**Fig 15. Normalized BVDSS  v.s. Junction** 

**Temperature** 

**5** 

**XP6NA6R3MT** 

## **MARKING INFORMATION** 

**==> picture [263 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number<br>6NA6R3<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

**==> picture [508 x 421] intentionally omitted <==**

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YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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. |<br>**----- End of picture text -----**<br>


Draw No.  M1-MT-8-EIFMRL-G-v08 



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---

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