# Dual MOSFET, Dual N Channel, 60 V, 16.2 A, 0.038 ohm

![Product image](https://novapart.co/image/farnell:4842446/)

**URL**: https://novapart.co/products/XP6A038MT/dual-mosfet-n-channel-60-v-162-a-0038-ohm
**SKU**: XP6A038MT
**Manufacturer**: YAGEO
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1130
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Dual N Channel |
| Product Range | XP6A038 Series |
| Qualification | - |
| Transistor Case Style | PMPAK |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 3.57W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 60V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 16.2A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.038ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4842446/)

**XP6A038MT** 

## ~~Po~~ **Halogen-Free Product** 

## _**DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

## ▼ **Simple Drive Requirement** 

- **Fast Switching Characteristic** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP6A038 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 

**==> picture [193 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1 D1 D2 D2 BVDSS  60V<br>RDS(ON) 38m Ω<br>D1<br>D1<br>D2<br>D2<br>S1 G1 S2 G2<br>S1<br>G1<br>S2<br>G2<br>PMPAK [®] 5x6<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings@Tj=25[o] C** . **(unless otherwise specified)** 

|**Absolute Maximum Ratings@Tj=25**|**Absolute Maximum Ratings@Tj=25gs@Tj=25s@Tj=25@Tj=25Tj=25j=25=25[o]C(unless otherwise specified)unless otherwise specified)**<br>.|**(unless otherwise specified)unless otherwise specified)pecified)ecified)**|**(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|---|---|
|Symbol<br>~~a~~|Parameter|Rating|Units|
|VDS<br>~~a~~|Drain-Source Voltage|60|V|
|VGS<br>~~a~~<br>~~a~~|Gate-Source Voltage|+<br>20<br>~~TT~~|V<br>~~TT~~|
|ID@TC=25℃<br>~~a~~<br>~~De~~<br>~~a~~|Drain Current, VGS@ 10V<br>~~De~~|16.2<br>~~De~~<br>~~TT~~|A<br>~~De~~<br>~~TT~~|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3|6.7<br>~~TT~~|A<br>~~TT~~|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3|5.3|A|
|IDM<br>~~a~~|Pulsed Drain Current1|30|A|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|3.57|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|18|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|6|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|35|℃/W|



**1** 

**202502033YAGEO** 

**XP6A038MT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~ee~~<br>~~a~~|Parameter<br>~~ee~~<br>|Test Conditions<br>~~ee~~<br>~~ee~~<br>|Min.<br>~~ee~~<br>~~ee~~<br>|Typ.<br>~~ee~~<br>~~ee~~<br>|Max.<br>~~ee~~<br>|Units<br>~~ee~~<br>|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~<br>~~a OO~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~OO~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~ee ~~<br>~~OO~~|60<br>~~ee~~<br> ~~ee ~~<br>~~OO~~<br>~~ee~~|-<br>~~ee~~<br> ~~ee~~<br>~~OO~~<br>~~ee~~|-<br>~~ee~~<br>~~OO~~<br>~~ee~~|V<br>~~ee~~<br>~~OO~~|
|RDS(ON)<br>~~ee~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~re~~<br>|VGS=10V, ID=7A<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|38<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=4.5V, ID=4A<br>~~ee~~<br>~~Gs~~<br>|-<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~Gs~~<br>~~Ge~~<br>|-<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~Gs~~<br>~~es~~<br>|55<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~Gs~~<br>~~es~~<br>|mΩ<br>~~ee~~<br>~~Gs~~<br>|
|VGS(th)<br>~~ee~~<br>~~a~~|Gate Threshold Voltage<br>~~re~~<br>|VDS=VGS, ID=250uA<br>~~Gs~~<br>|1.3<br>~~ee~~<br>~~Gs~~<br>~~Ge~~<br>|-<br>~~ee~~<br>~~Gs~~<br>~~es~~<br>|3<br>~~ee~~<br>~~Gs~~<br>~~es~~<br>|V<br>~~Gs~~<br>|
|gfs<br>~~ee~~<br>~~a GO~~<br>~~a~~|Forward Transconductance<br>~~re~~<br>~~GO~~<br>~~a~~|VDS=5V, ID=7A<br>~~Gs~~<br>~~GO~~<br>|-<br>~~ee ~~<br>~~Gs~~<br>~~Ge ~~<br>~~GO~~<br>~~TTITT~~<br>|22<br> ~~ee ~~<br>~~Gs~~<br> ~~es~~<br>~~GO~~<br>~~TTITT~~<br>|-<br> ~~ee~~<br>~~Gs~~<br>~~es~~<br>~~GO~~<br>~~TTITTE~~|S<br>~~Gs~~<br>~~GO~~<br>~~E~~|
|IDSS<br>~~TI~~<br>~~a~~<br>~~se~~|Drain-Source Leakage Current<br>~~TI~~<br>~~a~~<br>~~se~~|VDS=48V, VGS=0V<br>~~TI~~<br>~~es~~|-<br>~~TI~~<br>~~TTITT~~<br>~~ee~~|-<br>~~TI~~<br>~~TTITT~~<br>~~ee~~|25<br>~~TI~~<br>~~TTITTE~~|uA<br>~~TI~~<br>~~E~~|
|IGSS<br>~~a~~<br>~~se~~|Gate-Source Leakage<br>~~a~~<br>~~se~~|VGS=+<br>20V, VDS=0V<br>~~es~~|-<br>~~TTITT~~<br>~~ee~~|-<br>~~TTITT~~<br>~~ee~~|+<br>0.1<br>~~TTITTE~~|uA<br>~~E~~|
|Qg<br>~~a~~<br>~~se~~<br>~~es~~<br>~~ee~~|Total Gate Charge5<br>~~a ~~<br>~~se~~<br>~~ee~~|ID=7A<br>VDS=30V<br>VGS=10V<br> ~~es ~~|-<br>~~TTITT~~<br>~~ee~~<br>~~ee~~|20<br>~~TTITT~~<br>~~ee~~<br>~~ee~~|32<br>~~TTITT E~~<br>~~ee~~|nC<br>~~E~~<br>~~ee~~|
|Qgs<br><br>~~se~~<br>~~es~~<br>~~ee~~|Gate-Source Charge5<br> <br>~~se~~<br>~~ee~~||-<br> ~~ee~~<br>~~ee~~|5<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|Qgd<br>~~es~~<br>~~ee~~<br>~~es~~|Gate-Drain("Miller")Charge5<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|
|td(on)<br>~~ee~~<br>~~es~~<br>~~se~~|Turn-on DelayTime5<br>~~ee~~<br>~~se~~|VDS=30V<br>ID=1A<br>RG=3.3Ω<br>VGS=10V|-<br>~~ee~~<br>~~ee~~|9<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|tr<br>~~es~~<br>~~se~~<br>~~es~~|Rise Time5<br>~~se~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|td(off)<br>~~se~~<br>~~es~~|Turn-off DelayTime5<br>~~se~~||-<br>~~ee~~<br>~~ee~~|23<br>~~ee ~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|tf<br>~~es~~<br>~~se~~|Fall Time5<br>~~se~~||-<br>~~ee~~<br>~~{+~~|8<br>~~ee~~<br>~~{+~~|-<br>~~ee~~<br>~~{+~~|ns<br>~~ee~~<br>~~{+~~|
|Ciss<br>~~se~~<br>~~es~~<br>~~es~~<br>~~Oe~~|Input Capacitance5<br>~~se~~<br>~~es~~<br>~~Oe~~|VGS=0V<br>VDS=25V<br>f=1.0MHz<br>.<br>~~Oe~~|-<br>~~{+~~<br>~~ee~~<br>~~Oe~~|1150<br>~~{+~~<br>~~ee~~<br>~~Oe~~|1840<br>~~{+~~<br>~~ee~~<br>~~Oe~~|pF<br>~~{+~~<br>~~ee~~<br>~~Oe~~|
|Coss<br>~~es~~<br>~~Oe~~|Output Capacitance5<br>~~Oe~~||-<br>~~ee~~<br>~~Oe~~|70<br>~~ee~~<br>~~Oe~~|-<br>~~ee~~<br>~~Oe~~|pF<br>~~ee~~<br>~~Oe~~|
|Crss<br>~~es~~<br>~~Oe~~|Reverse Transfer Capacitance5<br>~~Oe~~||-<br>~~ee~~<br>~~Oe~~|52<br>~~ee~~<br>~~Oe~~<br>~~TE~~|-<br>~~ee~~<br>~~Oe~~<br>~~TEEE~~|pF<br>~~ee~~<br>~~Oe~~<br>~~EE~~|
|Rg<br>~~[ITI~~|Gate Resistance<br>~~[ITI~~|f=1.0MHz<br>~~[ITI~~|-<br>~~[ITI~~|2<br>~~[ITI~~<br>~~TE~~|4<br>~~[ITI~~<br>~~TEEE~~|Ω<br>~~[ITI~~<br>~~EE~~|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 85 ℃ /W on steady state. 

4.Starting Tj=25[o] C , VDD=30V , L=1mH , RG=25 Ω , VGS=10V , IAS=6A 

5.Guaranteed by design. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP6A038MT** ~~YAGEO;~~ 

**==> picture [433 x 648] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 20<br>T A =25 [o] C 10V T A =150 [o] C 10V<br>7.0V 7.0V<br>6.0V 16 6.0V<br>30 5.0V 5.0V<br>V GS =4.0V V GS  =4.0V<br>12<br>20 fo<br>8<br>10<br>4 uae<br>0 — 0 fp<br>0 2 4 6 8 0 1 2 3 4 5<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>55 2.4<br>I D =4A I D =7A<br>50 T A  =25 [o] C V GS =10V<br>2.0<br>45<br>1.6<br>40<br>35 Py EE . 1.2 [<br>30<br>0.8<br>25<br>20 Su 0.4 Hae<br>2 4 6 8 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance v.s. Gate Voltage              Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>10 2.0<br>I D =250uA<br>8 1.6<br>Sor] =r<br>6 1.2<br>T j =150 [o] C T j =25 [o] C<br>4 0.8<br>2 Ue 0.4<br>0 roto] «© 0.0 PE<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>               Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>DS(ON)<br>Ω )<br> (m<br>RDS(ON) Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance v.s. Gate Voltage** 

**3** 

**XP6A038MT** 

**==> picture [421 x 401] intentionally omitted <==**

**----- Start of picture text -----**<br>
12 2000 f=1.0MHz<br>I D =7A<br>V DS =30V<br>10<br>1600<br>8<br>1200<br>6 C iss<br>800<br>4<br>400<br>2<br>C oss<br>C rss<br>0 0<br>0 4 8 12 16 20 24 1 21 41 61 81<br>ZCCore Q G  , Total Gate Charge (nC) ete V DS  ,Drain-to-Source Voltage (V)<br>               Fig 7. Gate Charge Characteristics               Fig 8. Typical Capacitance Characteristics<br>100 —T 1 Sia SasaRES<br>Sas Co , ec<br>Duty factor = 0.5<br>Operation in this area<br>10 limited by RDS(ON) mocBLeeeesatdrc IT aft TION cIe =I=I Ty cg SS. fae<br>0.2<br>100us<br>0.1<br>1 ccs 0.1<br>. 0.05<br>Seer 1ms i m me— VI aUl PDM<br>e Sect Se<br>10ms 0.02 t<br>SIEGES ITED SNES oy PCA IEE, aL T<br>0.1 0.01<br>ee  T A =25 Sob [o] C sas NEUE AC Single Pulse TICIIIIE Duty factor = t/T Peak T j  = PDM x R thja  + T a ll<br>0.01 Single Pulse Ce Spa DC 0.01 / Rthja=85 [o] C/W<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS  ,Drain-to-Source Voltage (V) t , Pulse Width (s)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 8. Typical Capacitance Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

**==> picture [192 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150<br>T A  , Ambient Temperature (  [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Ambient Temperature** 

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**----- Start of picture text -----**<br>
2<br>I D =1mA<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>DSS<br>Normalized BV<br>**----- End of picture text -----**<br>


**Fig 12. Normalized BVDSS  v.s. Junction Temperature** 

**4** 

**XP6A038MT** 

## **MARKING INFORMATION** 

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**----- Start of picture text -----**<br>
Part Number<br>6A038<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


. 

**5** 

## **Package  Outline  :  PMPAK 5x6 (Dual Pad)** 

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**----- Start of picture text -----**<br>
L<br>D1<br>A L1 o o S<br>SYMBOLS Millimeters<br>H MIN NOM MAX<br>A 0.80 1.00 1.20<br>E1<br>E b 0.34 0.42 0.50<br>| ee<br>Me Se<br>C 0.54 0.76 0.97<br>ee<br>. ee<br>E2 I D 4.80 4.95 5.10<br>D1 4.11 4.21 4.31<br>1<br>L2 E 5.90 6.05 6.20<br>r e}oe e syt b |ee E1 5.60 5.75 — 5.90<br>ee<br>E2 1.60 (ref.)<br>—————— e 1.27 (ref.)<br>BACKSIDE VIEW<br>L 0.05 0.15 0.25<br>es<br>ee<br>L1 0.60 (ref.)<br>—-—, L2 0 . 60 (ref . )<br>H 3.60 (ref.)<br>I 0.15 (ref.)<br>D . D2 4.80 5.15 5.50<br>re<br>ee<br>|<br>C A 1.All Dimension Are In Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>D2<br>**----- End of picture text -----**<br>


Draw No.  M2-1MT8-G-v02 

**PMPAK5x6** (Dual Pad, 左右 ) 

## **PMPAK5X6(Dual Pad,** 左右 **) FOOTPRINT** ： 

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.<br>**----- End of picture text -----**<br>


Draw No. M2-1MT8-G-v02 

1 



## Links

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- [Supplier page](https://es.farnell.com/yageo/xp6a038mt/mosfet-dual-n-ch-60v-16-2a-pmpak/dp/4842446)
---

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