# MOS N 600V 95MOHM TO-247

![Product image](https://novapart.co/image/farnell:4461779RL/)

**URL**: https://novapart.co/products/XP60BM095WL/mos-n-600v-95mohm-to-247
**SKU**: XP60BM095WL
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6200
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461779RL/)

## **XP60BM095WL** ~~Po~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

- **100% Rg & UIS Test** 

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D<br>G<br>S<br>**----- End of picture text -----**<br>


- **Fast Switching Characteristic** 

- **Simple Drive Requirement** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP60BM095 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The TO-247 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. 

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BVDSS 600V<br>R 95mΩ<br>DS(ON)<br>3,6<br>ID 34A<br>5, Pa ss,<br>S<br>TO-247 (WL) D<br>G<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~<br>~~ne~~|Drain-Source Voltage|600|V|
|VGS<br>~~a~~<br>~~ne~~|Gate-Source Voltage|+<br>20|V|
|VGS<br>~~ne~~<br>~~a~~|Gate-Source Voltage, AC(f > 1Hz)|+<br>30|V|
|ID@TC=25℃<br>~~a~~<br>~~ns~~<br>~~ns~~|Drain Current, VGS @10V3,6|34|A|
|ID@TC=100℃<br>~~ns~~<br>~~ns~~<br>~~ns~~|Drain Current, VGS @10V3,6|21.7|A|
|IDM<br>~~ns~~<br>~~ns~~<br>~~ns~~|Pulsed Drain Current1|80|A|
|dv/dt<br>~~ns~~<br>~~ns~~<br>~~ns~~|MOSFET dv/dt Ruggedness(VDS= 0 …480V)|15|V/ns|
|PD@TC=25℃<br>~~ns~~<br>~~ns~~<br>~~ns~~|Total Power Dissipation|208.3|W|
|PD@TA=25℃<br>~~ns~~<br>~~ns~~<br>~~ns~~|Total Power Dissipation|3.12|W|
|EAS<br>~~ns~~<br>~~ns~~<br>~~ns~~|Single Pulse Avalanche Energy4|200|mJ|
|dv/dt<br>~~ns~~<br>~~ns~~<br>~~ns~~|Peak Diode Recoverydv/dt5|30|V/ns|
|TSTG<br>~~ns~~<br>~~ns~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~ns~~<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|0.6|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|40|℃/W|



**1** 

**202401221YAGEO** 

**XP60BM095WL** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V, ID=1mA<br>~~a~~<br>~~GG~~|600<br>~~a~~<br>~~GG~~|-<br>~~a~~<br>~~GG~~|-<br>~~a~~|V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~es~~<br>~~es~~|VGS=10V, ID=10A<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|95|mΩ|
|VGS(th)<br>~~a~~<br>~~a~~<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|VDS=VGS, ID=250uA<br>~~GG~~|2<br>~~GG~~|-<br>~~GG~~|4|V|
|gfs<br>~~a~~<br>~~**a**~~|Forward Transconductance<br>~~es~~<br>~~es~~|VDS=10V, ID=10A|-|27|-|S|
|IDSS<br>~~**a**~~|Drain-Source Leakage Current<br>~~es~~<br>~~a~~|VDS=480V, VGS=0V<br>~~a~~|-<br>~~a~~|-<br>~~a~~|100<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|+<br>1<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge7<br>~~a~~<br>~~a~~|ID=10A<br>VDS=480V<br>VGS=10V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~se~~<br>~~es~~|71<br>~~a~~<br>~~a~~<br>~~se~~|114<br>~~a~~<br>~~a~~<br>~~se~~|nC<br>~~a~~<br>~~a~~<br>~~se~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge7||-<br>~~es~~<br>~~es~~|16.5|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge7||-<br>~~es~~<br>~~es~~<br>~~es~~|24|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime7|VDD=300V<br>ID=10A<br>RG=10Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|30|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~**a**~~|Rise Time7||-<br>~~es~~<br>~~es~~<br>~~es~~|33<br>|-<br>|ns<br>|
|td(off)<br>~~a~~<br>~~**a**~~|Turn-off DelayTime7||-<br>~~es~~<br>~~es~~|150<br>|-<br>|ns<br>|
|tf<br>~~**a**~~|Fall Time7||-<br>~~esa~~|37<br>~~a~~|-<br>~~a~~|ns<br>~~a~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance7<br>~~a~~|VGS=0V<br>VDS=400V<br>f=1.0MHz<br>~~a~~|-<br>~~a~~<br>~~i~~<br>~~es~~|3080<br>~~a~~|4928<br>~~a~~|pF<br>~~a~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance7||-<br>~~es~~<br>~~es~~|80|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance7||-<br>~~es~~<br>~~es~~|10|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|6.5|13|Ω|



## **Notes:** 

1.Pulse width limited by max. junction temperature. 

## 2.Pulse test 

- 3.Ensure that the junction temperature does not exceed TJmax.. 

4.Starting Tj=25[o] C , VDD=90V , L=100mH , RG=25Ω , VGS=10V , IAS=2A 

5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25[o] C 

6.Limited by max. junction temperature. Maximum duty cycle D=0.75 

- 7.Guaranteed by design. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP60BM095WL** 

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60<br>T C  =150 [[o]] C 10V<br>50 9.0V<br>8.0V<br>7.0V<br>40 0.37 Ω V GS  =6.0V<br>30<br>20<br>10<br>0<br>0 4 8 12 16 20 24 28<br>V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br> , Drain Current (A)IDD<br>IDD<br>**----- End of picture text -----**<br>


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80<br>T C =25 [o] C 9.0V 10V 50 T C  =150 [[o]] C 9.0V 10V<br>8.0V 8.0V<br>60 7.0V 7.0V<br>V GS =6.0V 40 0.37 Ω V GS  =6.0V<br>40 30<br>20<br>20<br>10<br>0 0<br>0 5 10 15 20 25 30 35 0 4 8 12 16 20 24<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>110 4<br>I D =10A I D =10A D =10A =10A<br>T C =25 [o] C V  GS =10V<br>102<br>3<br>94<br>2<br>86<br>1<br>78<br>70 fe 0 ee<br>4 5 6 7 8 9 10 -100 -50 0 50 100<br>V GS  Gate-to-Source Voltage (V) 208.3 T j  , Junction Temperature ( j  , Junction Temperature (  , Junction Temperature ( [[o]] C )<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>           v.s. Junction Temperature<br>30 2<br>I D D =250uA<br>24 1.6<br>18 1.2<br>12 T j  = 150 [o] C T j  = 25 [o] C 0.8 0.6<br>6 0.4<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100<br>V SD  (V) T j  , Junction Temperature (    , Junction Temperature (  [[o]] C )<br> , Drain Current (A)ID  , Drain Current (A)IDD<br>)<br>Ω DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br> (A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 2. Typical Output Characteristics** 

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4<br>I D =10A D =10A =10A<br>V  GS =10V<br>3<br>2<br>1<br>0 ee<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature ( j  , Junction Temperature (  , Junction Temperature ( [[o]] C )<br>208.3<br>              Fig 4. Normalized On-Resistance<br>           v.s. Junction Temperature<br>2<br>I D D =250uA<br>1.6<br>1.2<br>0.6<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature (  [[o]] C )<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP60BM095WL** 

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12<br>I D =10A<br>10 V DS =480V<br>8<br>6<br>4<br>2<br>0 Y<br>0 30 60 90<br>Q G  , Total Gate Charge (nC)<br>              Fig 7. Gate Charge Characteristics<br>100<br>Operation in this area<br>limited by RDS(ON) OSS<br>‘ N 10u s<br>10<br>100u s<br>ae UTES<br>1<br>SON<br>1m s<br>S 10ms<br>0.1<br>DC<br>T C =25 [o] C<br>Single Pulse<br>0.01<br>1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>(A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>**----- End of picture text -----**<br>


**Fig 11. Switching Time Waveform** 

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100000 f=1.0MHz<br>10000<br>C iss<br>0.37 Ω<br>1000<br>100 C oss<br>10 C rss<br>1<br>0 200 400 600 800<br>V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1<br>:<br>Duty factor=0.5<br>0.2<br>,<br>0.1<br>0.1<br>0.05 P DM<br>t<br>0.02 mn.Kk > T<br>0.01 Duty factor = t/T<br>/ Peak Tj = PDM x Rthjc + TC<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Pulse Width (s)<br>208.3<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig10. Effective Transient Thermal Impedance** 

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VG<br>QG<br>10V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>


**Fig 12. Gate Charge Waveform** 

**4** 

**XP60BM095WL** 

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800<br>T j =25 [o] C<br>600<br>400<br>200<br>V GS =10V<br>0<br>0 20 40 60 80<br>I D  , Drain Current (A)<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Typ. Drain-Source on State Resistance** 

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250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

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2<br>I D =1mA<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>DSS<br>Normalized BV<br>**----- End of picture text -----**<br>


**Fig 15. Normalized BVDSS  v.s. Junction Temperature** 

**5** 

**XP60BM095WL** 

## **MARKING INFORMATION** 

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Part Number<br>60BM095<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline :  TO-247** 

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|||||||||
|---|---|---|---|---|---|---|---|
|E|A|
|Millimeters|
|E1|A|SYMBOLS|
|2|MIN|NOM|MAX|
|-|=|eo|
|>|_|[oH]|Tl|—_-|———|
|A|4.80|5.03|5.25|
|S|
|A2|1.90|2.05|2.20|
|Awe|IF|ee|ee|
|E2|E|15.75|15.95|16.15|
|Lies|Itt|es|ee|
|φ1|φ|E1|13.00|13.60|14.20|
|D|D1|E2|3.60|4.35|5.10|
|D|20.80|20.95|21.10|
|D1|16.20|16.95|17.70|
|C|0.50|0.60|0.70|
|L|19.80|20.10|20.40|
|ee|ee|
|L1|4.10|4.25|4.40|
|F|2.80|3.10|3.40|
|L|
|PTT|TTT|ee|b|ee|1.05|1.20|1.35|
|1|
|$l|ee|ee|a|
|b1|1.90|2.18|2.45|
|e|5.44 ref.|
|φ|3.50|3.58|3.65|
|L|
|F|φ1|7.18 ref.|
|b1|
|S|6.00|6.15|6.30|
|rye|ee|
|b|.|
|C|
|||||ee|
|e|
|1.All Dimensions Are in Millimeters.|
|2.Dimension Does Not Include Mold Protrusions.|

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Draw No.  M1-WL3-G-v02 

**TO-247** 

## **TO-247 FOOTPRINT** ： 

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5.44mm  5.44mm<br>2.0mm<br>.<br>1.4mm<br>**----- End of picture text -----**<br>


Draw No. M1-WL3-G-v02 

1 



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- [Supplier page](https://es.farnell.com/yageo-xsemi/xp60bm095wl/mos-n-600v-95mohm-to-247/dp/4461779RL)
---

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