# MOS N 40V 61.4A 0.85MOHM PMPAK5X6

![Product image](https://novapart.co/image/farnell:4461777/)

**URL**: https://novapart.co/products/XP4NAR85CMT/mos-n-40v-614a-085mohm-pmpak5x6
**SKU**: XP4NAR85CMT
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3980
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461777/)

## **XP4NAR85CMT** ~~Po~~ **Halogen-Free Product** _**N-CHANNEL ENHANCEMENT MODE**_ 

_**POWER MOSFET**_ 

**==> picture [224 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
D BVDSS 40V<br>RDS(ON) 0.85m Ω<br>G<br>S D<br>D<br>D<br>D<br>process<br>and fast<br>an extreme<br>S<br>converters<br>with backside<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Ultra Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP4NAR85C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~es~~<br>~~es~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~es~~<br>~~es~~<br>~~es~~|Drain-Source Voltage<br>~~en~~|40<br>~~en~~|V<br>~~en~~|
|VGS<br>~~es~~<br>~~es~~|Gate-Source Voltage<br>~~en~~|+<br>20<br>~~en~~|V<br>~~en~~|
|ID@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V4(Silicon Limited)<br>~~en~~<br>|280<br>~~en~~<br>|A<br>~~en~~<br>|
|ID@TC=25℃<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V4<br>|100<br>|A<br>|
|ID@TA=25℃<br>~~esI~~<br>~~es~~|Drain Current, VGS@ 10V3<br>~~I~~|61.4<br>~~I~~|A<br>~~I~~|
|ID@TA=70℃<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V3|49|A|
|IDM<br>~~es~~<br>~~es~~<br>~~es~~|Pulsed Drain Current1|400|A|
|PD@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation<br>|104<br>|W<br>|
|PD@TA=25℃<br>~~es~~<br>~~es~~|Total Power Dissipation3<br>|5<br>|W<br>|
|EAS<br>~~esa~~|Single Pulse Avalanche Energy5<br>~~a~~|180<br>~~a~~|mJ<br>~~a~~|
|TSTG<br>~~I~~<br>~~es~~|Storage Temperature Range<br>~~I~~|-55 to 150<br>~~I~~|℃<br>~~I~~|
|TJ<br>~~es~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.2|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202311272YAGEO** 

**XP4NAR85CMT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~se~~|Test Conditions<br>~~se~~|Min.<br>~~se~~|Typ.<br>~~se~~|Max.<br>~~se~~|Units<br>~~se~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|40|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=20A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|0.85<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=20A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|1.5<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1.2|-|2.5|V|
|gfs|Forward Transconductance|VDS=5V, ID=20A|-|110|-|S|
|IDSS<br>~~a a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~|VDS=32V, VGS=0V<br>~~OO~~|-<br>~~OO~~<br>~~GOO~~|-<br>~~OO~~<br>~~GOO~~|10<br>~~OO~~<br>~~GOO~~|uA<br>~~OO~~|
|IGSS<br>~~a a~~<br>~~a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~**P**~~|-<br>~~a~~<br>~~GOO~~<br>~~**P**T~~|-<br>~~a~~<br>~~GOO~~|+<br>0.1<br>~~a~~<br>~~GOO~~|uA<br>~~a~~|
|Qg<br>~~a a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~|ID=20A<br>VDS=20V<br>VGS=10V<br>~~a~~<br>~~**P**~~<br>~~CT~~|-<br>~~a~~<br>~~GOO~~<br>~~**P**T~~|120<br>~~a~~<br>~~GOO~~|192<br>~~a~~<br>~~GOO~~|nC<br>~~a~~|
|Qgs<br>~~a~~|Gate-Source Charge||-<br>~~**P**T~~|18<br>~~y~~|-<br>~~y~~|nC<br>~~y~~|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~Ty~~<br>~~CT~~|32<br>~~Ty~~|-<br>~~Ty~~|nC<br>~~Ty~~|
|td(on)<br>~~a~~|Turn-on DelayTime|VDS=20V<br>ID=20A<br>RG=1Ω<br>VGS=10V<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~CT~~|14|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~CT~~<br>~~Ty~~<br>~~CT~~|50<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|td(off)<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~CT~~<br>~~CT~~|55|-|ns|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~CT~~<br>~~CT~~|22|-|ns|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=30V<br>f=1.0MHz<br>~~CT~~|-<br>~~CT~~<br>~~Pr~~|5700<br>~~Pr~~|9120<br>~~Pr~~|pF<br>~~Pr~~|
|Coss<br>~~a~~|Output Capacitance||-<br>~~pf~~|1300<br>~~pf~~|-<br>~~pf~~|pF<br>~~pf~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~Py~~|110<br>~~Py~~|-<br>~~Py~~|pF<br>~~Py~~|
|Rg<br>~~a OO~~|Gate Resistance<br>~~OO~~|f=1.0MHz<br>~~OO~~|-<br>~~OO~~|1.5<br>~~OO~~|3<br>~~OO~~|Ω<br>~~OO~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.2|V|
|trr|Reverse Recovery Time|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|57|-|ns|
|Qrr|Reverse RecoveryCharge||-|70|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 60[o] C/W at steady state. 

- 4.Package limitation current is 100A . 

- 5.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP4NAR85CMT** 

**==> picture [418 x 647] intentionally omitted <==**

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400 200<br>T C =25 [o] C 10V T C = 150 [o] C 10V<br>7.0V 7.0V<br>320 6.0V 160 6.0V<br>5.0V 5.0V<br>V  GS = 4.0V 0.95m Ω V  GS = 4.0V<br>240 120<br>160 Fo) 80 Fe<br>80 40 a<br>0 0<br>0 Peppy 1 2 3 4 00  Ey 0 1 2 3 4<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>5 2.0<br>I D = 20 A I D =20A<br>T C =25 [o] C V GS  =10V<br>4<br>1.6<br>3<br>1.2<br>2 tHE<br>0.8<br>10 pope 0.4<br>2 4 6 8 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>100 2.0<br>I D =250uA<br>1.6<br>10<br>ne 1.2 ee<br>T j =150 [o] C T j =25 [o] C<br>0.8<br>1<br>0.4<br>0.1 ern 0.0 EE<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>)<br>Ω DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**3** 

**XP4NAR85CMT** 

**==> picture [419 x 183] intentionally omitted <==**

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12 12000 f=1.0MHz<br>I D = 20 A<br>10 V DS =20V 10000<br>8 8000 0.95m Ω<br>6 6000<br>C iss<br>4 4000<br>2 2000<br>C oss<br>0 aPrai 0 Anan 30 60 90 120 150 0 1 KSRE: 10 - 19 28 37 C rss 46<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 8. Typical Capacitance Characteristics** 

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1000<br>Operation in this<br>area limited by<br>RDS(ON)<br>100 a aanInaTEy,oe Seis<br>ae Ne<br>10us<br>gor eo ee ee<br>100us<br>10 1ms<br>10ms<br>1 ane rin aNSAe<br>DC<br>T C =25 [o] C<br>Single  Pulse<br>0.1<br>0.01 0.1 1 10 100<br>V DS  , Drain-to-Source Voltage (V)<br>               Fig 9. Maximum Safe Operating Area<br>300<br>240<br>ee<br>180<br>Limited by package<br>120<br>60<br>0 PN<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [o] C )<br>Fig 11. Drain Current v.s. Case<br>            Temperature<br>(A)<br>ID<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

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**----- Start of picture text -----**<br>
1<br>Duty factor=0.5<br>iiss cee Set<br>atn<br>0.2<br>aed? ANN<br>0.1<br>0.1<br>0.05<br>P DM<br>0.02 t<br>0.01 T<br>ralrae A wyIl<br>Single Pulse Duty factor = t/T<br>Peak Tj = PDM x Rthjc + Tc<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Pulse Width (s)<br>   Fig 10. Effective Transient Thermal Impedance<br>200<br>V DS =5V<br>160<br>ee een ee<br>120<br>80 T j =150 [o] C<br>40 T j =25 [o] C<br>T j =-55 [o] C<br>0 Lyra<br>0 1 2 3 4 5 6<br>V GS , Gate-to-Source Voltage (V)<br>)thjc<br>Normalized Thermal Response (R<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP4NAR85CMT** 

**==> picture [191 x 389] intentionally omitted <==**

**----- Start of picture text -----**<br>
2<br>I D  =1mA<br>1.6<br>eee<br>1.2<br>ete ps<br>ao<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction<br>            Temperature<br>10<br>T j =25 [o] C<br>8<br>6<br>4<br>2<br>4.5V<br>V GS =10V<br>0 ce<br>0 20 40 60 80 100 120 140<br>I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

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**----- Start of picture text -----**<br>
120<br>100<br>80 ENE 0.95m Ω<br>:<br>60<br>Povo Nef<br>40 PNY<br>20<br>ee ee ee<br>0 PN<br>0 50 100 150<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

**Fig 15. Typ. Drain-Source on State Resistance** 

**5** 

**XP4NAR85CMT** 

## **MARKING INFORMATION** 

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**----- Start of picture text -----**<br>
Part Number<br>4NAR85C<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

**==> picture [508 x 421] intentionally omitted <==**

**----- Start of picture text -----**<br>
YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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. |<br>**----- End of picture text -----**<br>


Draw No.  M1-MT-8-EIFMRL-G-v08 



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- [Supplier page](https://es.farnell.com/yageo-xsemi/xp4nar85cmt/mos-n-40v-61-4a-0-85mohm-pmpak5x6/dp/4461777)
---

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