# MOS P -30V -22A 7MOHM PMPAK5X6

![Product image](https://novapart.co/image/farnell:4461771/)

**URL**: https://novapart.co/products/XP3P7R0EMT/mos-p-30v-22a-7mohm-pmpak5x6
**SKU**: XP3P7R0EMT
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1710
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461771/)

**XP3P7R0EMT Halogen-Free Product** 

_**P-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

**==> picture [218 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
D BVDSS -30V<br>R 7m Ω<br>DS(ON)<br>G ID -75A<br>HBM ESD 2KV<br>S —<br>D<br>D<br>D<br>process technology<br>D<br>fast switching<br>efficient device<br>S<br>application<br>heat sink to<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Fast Switching Characteristic** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP3P7R0E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The PMPAK[®] 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|-30|V|
|VGS|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃|Drain Current, VGS@ 10V|-75|A|
|ID@TC=100℃|Drain Current, VGS@ 10V|-47.8|A|
|ID@TA=25℃|Drain Current3, VGS@ 10V|-22|A|
|ID@TA=70℃|Drain Current3, VGS@ 10V|-17.5|A|
|IDM|Pulsed Drain Current1|-200|A|
|PD@TC=25℃|Total Power Dissipation|59.5|W|
|PD@TA=25℃|Total Power Dissipation|5|W|
|EAS|Single Pulse Avalanche Energy4|135|mJ|
|TSTG|Storage Temperature Range|-55 to 150|℃|
|TJ|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|2.1|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202311171YAGEO** 

**XP3P7R0EMT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~pO~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~pO~~|VGS=0V, ID=-250uA<br>~~pO~~|-30<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|V<br>~~pO~~|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~|VGS=-10V, ID=-20A<br>~~a~~|-<br>~~a~~|-<br>~~a~~|7<br>~~a~~|mΩ<br>~~a~~|
|||VGS=-4.5V, ID=-20A<br>~~a~~|-<br>~~a~~|-<br>~~a~~|15<br>~~a~~|mΩ<br>~~a~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, ID=-250uA<br>~~a~~|-1<br>~~a~~|-<br>~~a~~|-3<br>~~a~~|V<br>~~a~~|
|gfs<br>~~pO~~|Forward Transconductance<br>~~pO~~|VDS=-5V, ID=-20A<br>~~pO~~|-<br>~~pO~~|47<br>~~pO~~|-<br>~~pO~~|S<br>~~pO~~|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~eG~~<br>~~ee~~|VDS=-24V, VGS=0V<br>~~eG~~<br>~~eG~~|-<br>~~eG~~<br>~~G~~|-<br>~~eG~~<br>~~G~~|-10<br>~~eG~~<br>~~G~~|uA<br>~~eG~~<br>~~G~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V<br>~~eG~~|-<br>~~G~~|-<br>~~G~~|+<br>30<br>~~G~~|uA<br>~~G~~|
|Qg<br>~~a~~<br>~~es~~<br>~~rs~~|Total Gate Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=-20A<br>VDS=-15V<br>VGS=-4.5V<br>~~eG~~<br>~~|~~|-<br>~~G~~<br>~~a~~<br>~~|~~<br>~~**|**~~|34<br>~~G~~<br>~~a~~|54.4<br>~~G~~<br>~~a~~|nC<br>~~G~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~rs~~<br>~~es~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|12<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~rs~~<br>~~es~~<br>~~es~~|Gate-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|11<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=-15V<br>ID=-20A<br>RG=3.3Ω<br>VGS=-10V<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~a~~|42<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~**|**~~|120<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|460<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~es~~<br>~~es~~<br>~~rs~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|280<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|
|Ciss<br>~~es~~<br>~~rs~~<br>~~rs~~|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=-15V<br>f=1.0MHz<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~|~~|4300<br>~~a~~<br>~~ee~~|6880<br>~~a~~<br>~~ee~~|pF<br>~~a~~<br>~~ee~~|
|Coss<br>~~rs~~<br>~~rs~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|590<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~|
|Crss<br>~~rs~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|330|-|pF|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

## 2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec 

- 4.Starting Tj=25[o] C , VDD=-30V , L=0.3mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP3P7R0EMT** ~~Meee~~ 

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320 160<br>T C =25 [o] C -10V T C = 150 [o] C -10V<br>-7.0V -7.0V<br>-6.0V -6.0V<br>240 120 -5.0V<br>V G = -4.0V<br>-5.0V<br>160 80<br>V  G  = -4.0V<br>80 40<br>0 pa]EE 0<br>0 4 8 12 16 0 2 4 6 8 10<br>-V DS  , Drain-to-Source Voltage (V) -V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>10 2.0<br>I D = -20 A I D = -20A<br>T C =25 [o] C V G = -10V<br>9 1.6<br>8 1.2<br>7 0.8<br>6 0.4<br>5 SES) 0.0 LEE<br>2 4 6 8 10 -100 -50 0 50 100 150<br>-V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>100 2.0<br>I D = -250uA<br>1.6<br>10<br>1.2<br>T j =150 [o] C T j =25 [o] C<br>0.8<br>1 PER) teste<br>0.4<br>2.01E+09<br>0.1 AEE) 0.0 EEE<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>-V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>D D<br>-I -I<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)-IS<br>Normalized V<br>**----- End of picture text -----**<br>


**3** 

**XP3P7R0EMT** 

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8<br>I D = -20 A<br>V DS = -15V<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

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1000<br>100 Operation in this<br>area limited by<br>RDS(ON)<br>100us<br>10<br>= FET<br>1ms<br>1 10ms<br>DC<br>T C =25 [o] C<br>Single  Pulse<br>0.1 SEE)<br>0.1 1 10 100<br>-V DS  , Drain-to-Source Voltage (V)<br>(A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

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80<br>V DS =-5V<br>T j =25 [o] C T j =150 [o] C<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5 6<br>-V GS  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 11. Transfer Characteristics** 

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8000 f=1.0MHz<br>6000<br>4000 C iss<br>2000<br>C  oss<br>C rss<br>0 CEEEEEEEP<br>1 5 9 13 17 21 25 29 33 37<br>-V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1<br>Duty factor=0.5<br>0.2<br>0.1 0.1<br>0.05 a Alaa P DM |<br>t<br>T<br>0.02<br>Duty factor = t/T<br>0.01 Peak Tj = PDM x Rthjc + Tc<br>Single Pulse<br>0.01 ESCIEA e ul<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

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100<br>80<br>60<br>40<br>20<br>2011082301<br>0<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [o] C )<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 12. Drain Current v.s. Case Temperature** 

**4** 

**XP3P7R0EMT** 

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wr<br>2 100<br>I D  = -1mA<br>1.6 80<br>1.2 = 60 Loe<br>HERE ee EESt EEE<br>0.8 40<br>0.4 20<br>0 ely 0 CESS<br>-100 -50 0 50 100 150 0 50 100<br>T  j  , Junction Temperature ( [o] C) T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>50<br>T j =25 [o] C<br>40<br>30<br>20<br>-4.5V<br>10<br>V GS = -10V<br>0<br>0 20 40 60 80 100 120<br>-I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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100<br>80<br>60 Loe<br>40<br>20<br>0 CESS<br>0 50 100 150<br>T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

**Fig 15. Typ. Drain-Source on State Resistance** 

**5** 

**XP3P7R0EMT** 

## ~~) lta~~ **MARKING INFORMATION** 

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Part Number<br>3P7R0E<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

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YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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. |<br>**----- End of picture text -----**<br>


Draw No.  M1-MT-8-EIFMRL-G-v08 



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- [Supplier page](https://es.farnell.com/yageo/xp3p7r0emt/mos-p-30v-22a-7mohm-pmpak5x6/dp/4461771)
---

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