# MOS P -30V 10MOHM TO-252

![Product image](https://novapart.co/image/farnell:4461768/)

**URL**: https://novapart.co/products/XP3P010H/mos-p-30v-10mohm-to-252
**SKU**: XP3P010H
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1510
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461768/)

**XP3P010H** 

## ~~ee~~ **Halogen-Free Product** _**P-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

**==> picture [459 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
▼  100% UIS Test D BVDSS -30V<br>▼  Simple Drive Requirement RDS(ON) 10m Ω<br>▼  Fast Switching Characteristic ID -58A<br>G<br>▼  RoHS Compliant & Halogen-Free<br>S<br>Description<br>XP3P010 series are innovated design and @ silicon process G D ><br>technology to achieve the lowest possible on-resistance and fast S TO-252(H)<br>switching performance. It provides the designer with an extreme<br>efficient device for use in a wide range of power applications.<br>**----- End of picture text -----**<br>


The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~ee~~<br>~~ee~~<br>~~ee~~|Parameter<br>~~ts~~<br>~~nen~~<br>|Rating<br>~~(~~<br>~~nen~~<br>~~(I GE~~<br>|Units<br>~~GO~~<br>~~nen~~<br>~~GE~~<br>|
|---|---|---|---|
|VDS<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain-Source Voltage<br>~~ts~~<br>~~nen~~<br><br>|-30<br>~~(~~<br>~~nen~~<br>~~(I GE~~<br><br>~~(ee~~<br>|V<br>~~GO~~<br>~~nen~~<br>~~GE~~<br><br>|
|VGS<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Voltage<br>~~nen~~<br>~~es~~<br>|+<br>20<br>~~nen~~<br>~~(I GE~~<br>~~es~~<br>~~(ee~~<br>|V<br>~~nen~~<br>~~GE~~<br>~~es~~<br>|
|ID@TC=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current, VGS@ 10V<br>~~es~~<br>~~nen~~<br>~~rs~~<br>|-58<br>~~(I GE~~<br>~~es~~<br>~~(ee~~<br>~~nen~~<br>~~(es~~<br>|A<br>~~GE~~<br>~~es~~<br>~~nen~~<br>~~GR~~<br>|
|ID@TC=100℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current, VGS@ 10V<br><br>~~rs~~<br>|-37<br>~~(ee~~<br><br>~~(es~~<br><br>~~(I GE~~|A<br><br>~~GR~~<br><br>~~GE~~|
|IDM<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Pulsed Drain Current1<br>~~rs~~<br>~~nen~~<br>~~rs~~<br>|-200<br>~~(es~~<br>~~nen~~<br>~~(I GE~~<br>|A<br>~~GR~~<br>~~nen~~<br>~~GE~~<br>|
|PD@TC=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Power Dissipation<br>~~rs~~<br><br>~~rs~~<br>|50<br><br>~~(I GE~~<br><br>~~(I GE~~|W<br><br>~~GE~~<br><br>~~GE~~|
|PD@TA=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Power Dissipation4<br>~~rs~~<br>~~nen~~<br>~~rs~~<br>|2<br>~~(I GE~~<br>~~nen~~<br>~~(I GE~~<br>|W<br>~~GE~~<br>~~nen~~<br>~~GE~~<br>|
|EAS<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Single Pulse Avalanche Energy3<br>~~rs~~<br><br>~~rs~~<br>|28.8<br><br>~~(I GE~~<br><br>~~**(**I GE~~|mJ<br><br>~~GE~~<br><br>~~GE~~|
|TSTG<br>~~ee~~<br>~~ee~~<br>~~ee~~|Storage Temperature Range<br>~~rs~~<br>~~nen~~<br>~~ns~~|-55 to 150<br>~~(I GE~~<br>~~nen~~<br>~~**(**I GE~~<br>~~ee~~|℃<br>~~GE~~<br>~~nen~~<br>~~GE~~|
|TJ<br>~~ee~~<br>~~ee~~|OperatingJunction Temperature Range<br>~~rs~~<br><br>~~ns~~|-55 to 150<br><br>~~**(**I GE~~<br>~~ee~~|℃<br><br>~~GE~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|2.5|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient(PCB mount)4|62.5|℃/W|



**1** 

**202311201YAGEO** 

**XP3P010H** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ee~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~a~~|VGS=0V, ID=-250uA<br>~~a~~|-30|-|-|V|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~<br>~~ee~~<br>~~ee~~|VGS=-10V, ID=-30A<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|10<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=-4.5V, ID=-20A<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|17<br>~~ee~~|mΩ<br>~~ee~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, ID=-250uA|-1|-|-3|V|
|gfs<br>~~a~~<br>~~a~~|Forward Transconductance<br>~~ee~~<br>~~a~~<br>~~a~~|VDS=-5V, ID=-30A<br>~~a~~|-|52|-|S|
|IDSS<br>~~a~~|Drain-Source Leakage Current<br>~~a~~<br>~~a~~|VDS=-24V, VGS=0V|-|-|-10|uA|
|IGSS<br>~~a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~|-<br>~~es~~|-|+<br>100|nA|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~<br>~~a~~|ID=-20A<br>VDS=-24V<br>VGS=-4.5V<br>~~a~~|-<br>~~es~~<br>~~es~~|36|57.6|nC|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|10|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|15|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=-15V<br>ID=-30A<br>RG=3.3Ω<br>VGS=-10V|-<br>~~es~~<br>~~es~~<br>~~es~~|10|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|73|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|120|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~es~~<br>~~es~~|125<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|Ciss<br>~~a~~<br>~~a~~<br>~~rs~~|Input Capacitance|VGS=0V<br>VDS=-25V<br>f=1.0MHz<br>~~ee~~<br>~~|~~|-<br>~~es~~<br>~~es~~<br>~~es~~|3650<br>~~ee~~|5840<br>~~ee~~|pF<br>~~ee~~|
|Coss<br>~~a~~<br>~~rs~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>||-<br>~~es~~<br>~~es~~<br>~~|~~<br>||415<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|pF<br>~~ee~~|
|Crss<br>~~rs~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>||-<br>~~es~~<br>~~|~~<br>||295<br>~~|~~|-<br>~~|~~|pF|
|Rg<br>~~rs~~<br>~~a ~~|Gate Resistance<br>~~ee~~<br> ~~a~~|f=1.0MHz<br>~~ee~~<br>~~|~~|-<br>~~es~~<br>~~|~~<br>||9<br>~~|~~|18<br>~~|~~|Ω|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=-30A, VGS=0V|-|-|-1.2|V|
|trr|Reverse Recovery Time|IS=-30A,VGS=0V,<br>dI/dt=100A/µs|-|14|-|ns|
|Qrr|Reverse RecoveryCharge||-|7|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Starting Tj=25[o] C , VDD=-30V , L=0.1mH , RG=25 Ω , VGS=-10V 

- 4.Surface mounted on 1 in[2] copper pad of FR4 board 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP3P010H** ~~YEO~~ 

**==> picture [419 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 120<br>T C =25 [o] C       -10V T C = 150 [o] C       -10V<br>    -7.0V<br>160     -7.0V -6.0V 100 -6.0V<br>    -5.0V<br>-5.0V<br>80 V G = -4.0V<br>120 Fo (EO<br>V G = -4.0V 60<br>80<br>40<br>40<br>| — 20 aa<br>0 fot) 0 Fee<br>0 2 4 6 8 10 0 1 2 3 4 5 6<br>-V DS  , Drain-to-Source Voltage (V) -V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics  Fig 2. Typical Output Characteristics<br>12 2.4<br> I D = -20 A I D D = -30 A<br>11   T C =25 ℃ 2.0 V G = - 10V G = - 10V = - 10V<br>10 1.6<br>9 1.2<br>8 0.8<br>7 0.4<br>6 aaa 0.0<br>2 4 6 8 10 -100 -50 0 50 100 150<br>-V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( j  , Junction Temperature (  , Junction Temperature ( [[o]] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage  Fig 4. Normalized On-Resistance<br>           v.s. Junction Temperature<br>80 2.0<br>I D = - 250uA<br>1.6<br>60<br>1.2<br>T j =150 [o] C T j =25 [o] C<br>40<br>Ta] 0.8 FEE<br>20<br>0.4<br>0 HH 0.0 EEET<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>-V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br> , Drain Current (A)-ID  , Drain Current (A)-ID<br>)<br>Ω DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)-IS<br>Normalized  V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 2. Typical Output Characteristics** 

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**----- Start of picture text -----**<br>
2.4<br>I D D = -30 A<br>V G = - 10V G = - 10V = - 10V<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature ( j  , Junction Temperature (  , Junction Temperature ( [[o]] C)<br>DS(ON)<br>Normalized R<br>**----- End of picture text -----**<br>


**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP3P010H** 

**==> picture [192 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>I D = -20A<br>V DS = -24V<br>8<br>6<br>4<br>2<br>0 }<br>0 aan 20 40 60 80<br>Q G  , Total Gate Charge (nC)<br>              Fig 7. Gate Charge Characteristics<br>1000<br>TSTSRS<br>100 Operation in this area<br>limited by R DS(ON) iar PeAene Lu<br>Nees See:<br>10 100us<br>See seTtsha seth Ne INE eles aig<br>~ oes csaud 1ms<br>ale ae Noe pci<br>1<br>10ms<br>Sessa) T C =25 [o] C a es tiap NEena DC<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>-V DS  , Drain-to-Source Voltage (V)<br> , Gate to Source Voltage (V)<br>GS<br>-V<br>(A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**==> picture [188 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>V DS = -5V<br>60<br>40<br>T j =150 [o] C<br>20<br>T j =25 [o] C<br>T j = -55 [o] C<br>0 ZL<br>0 1 2 3 4 5 6<br>-V GS  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 11. Transfer Characteristics** 

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**----- Start of picture text -----**<br>
f=1.0MHz<br>6000<br>5000<br>4000<br>C iss<br>3000<br>2000<br>1000<br>C oss<br>0 — C rss<br>1 SSS 5 9 13 17 21 25 29 33 37<br>-V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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**----- Start of picture text -----**<br>
1<br>Duty factor=0.5<br>Pont Ao<br>STO<br>0.2<br>ne A<br>0.1<br>0.1<br>LS.<br>0.05 P DM<br>t<br>HS)/ ARR | T I<br>0.02<br>Duty factor = t/T<br>0.01 Peak T j  = P DM  x R thjc  + T C<br>veal I UT l<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

**==> picture [150 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
VG<br>QG<br>-4.5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>


**Fig 12. Gate Charge Waveform** 

**4** 

**XP3P010H** 

**==> picture [421 x 455] intentionally omitted <==**

**----- Start of picture text -----**<br>
YAGEO<br>2 8060<br>I D  = -1mA<br>1.6<br>| 60 ea<br>1.2<br>40<br>Ag pepe<br>0.8<br>20<br>0.4<br>0 aa 0 PASE<br>-100 -50 0 50 100 150 0 50 100<br>T  j  , Junction Temperature ( [o] C) T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>100 80<br>T j =25 [o] C<br>80<br>60<br>60<br>40<br>40<br>20<br>20<br>Ganeeoee -4.5V \<br>V  GS  = -10V<br>0 ————|} 0 Ly<br>0 20 40 60 80 25 50 75 100 125<br>-I D  , Drain Current (A) T C  [[o]]<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8060 ea<br>40<br>pepe<br>20<br>0 PASE<br>0 50 100 150<br>T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>              Fig 14. Total Power Dissipation<br>80<br>60<br>40<br>20<br>\<br>0 Ly<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [[o]] C )<br>, Power Dissipation(W)<br>D<br>P<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

**Fig 15. Typ. Drain-Source on State Resistance** 

**Fig 16. Drain Current v.s. Case Temperature** 

**5** 

**XP3P010H** 

## **MARKING INFORMATION** 

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**----- Start of picture text -----**<br>
Part Number<br>3P010<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : TO-252** 

**==> picture [443 x 457] intentionally omitted <==**

**----- Start of picture text -----**<br>
Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>D<br>A2 2.18 2.30 2.40<br>rr<br>A3 0.40 0.50 0.65<br>D1<br>— —|)| eeee ee<br>B 0.40 0.70 1.00<br>= E2 Sy B1 0.50 0.85 1.20<br>D 6.00 6.50 6.80<br>D1 4.80 5.35 5.90<br>mai ne E3 —— E3 4.00 (ref.)<br>E1<br>F 2.00 2.63 3.05<br>F1 0.50 0.85 1.20<br>E1 5.00 5.70 6.30<br>E2 0.50 1.10 1.80<br>F1 e 2.3 (ref)<br>C 0.35 0.525 0.70<br>B1<br>F<br>B2 A1 0.00 － 0.25<br>B<br>B2 － － 1.25<br>a e e SEE L 0.90 1.34 1.78<br>.<br>_<br>A2<br>Ved uP C<br>| A1 f okt<br>A3 L<br>|<br>1.All Dimensions Are in Millimeters.<br>**----- End of picture text -----**<br>


2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-H3EFIMT-G-v10 

**TO-252** 

## **TO-252 FOOTPRINT** ： 

## . rT 

Draw No. M1-H3EFIMT-G-v10 



## Links

- [View this product on Novapart](https://novapart.co/products/XP3P010H/mos-p-30v-10mohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/yageo/xp3p010h/mos-p-30v-10mohm-to-252/dp/4461768)
---

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