# MOS N 30V 21.5A 4.2MOHM PMPAK-3X3

![Product image](https://novapart.co/image/farnell:4461765RL/)

**URL**: https://novapart.co/products/XP3NA4R2YT/mos-n-30v-215a-42mohm-pmpak-3x3
**SKU**: XP3NA4R2YT
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1100
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461765RL/)

## **XP3NA4R2YT** ~~[oo~~ **Halogen-Free Product** 

_**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

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D BVDSS 30V<br>RDS(ON) 4.2m Ω<br>G D<br>D<br>S D<br>D<br>process<br>and fast<br>S<br>an extreme<br>SS G<br>**----- End of picture text -----**<br>


▼ **Simple Drive Requirement** 

- **Small Size & Ultra_Low RDS(ON)** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP3NA4R2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

**PMPAK[®] 3 x 3** 

The PMPAK[®] 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~a~~|30|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V4<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|40|A|
|ID@TA=25℃|Drain Current, VGS@ 10V3|21.5|A|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3|17.2|A|
|IDM<br>~~a~~|Pulsed Drain Current1|160|A|
|PD@TA=25℃<br>~~a ~~|Total Power Dissipation<br> ~~a~~|3.12|W|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|40|℃/W|



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**XP3NA4R2YT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~se~~|Test Conditions<br>~~se~~|Min.<br>~~se~~|Typ.<br>~~se~~|Max.<br>~~se~~|Units<br>~~se~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=19A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|4.2<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=12A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|7.8<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1.3|-|2.3|V|
|gfs|Forward Transconductance|VDS=5V, ID=19A|-|52|-|S|
|IDSS<br>~~a a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~|VDS=24V, VGS=0V<br>~~OO~~|-<br>~~OO~~<br>~~GOO~~|-<br>~~OO~~<br>~~GOO~~|10<br>~~OO~~<br>~~GOO~~|uA<br>~~OO~~|
|IGSS<br>~~a a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~|-<br>~~a~~<br>~~GOO~~|-<br>~~a~~<br>~~GOO~~|+<br>100<br>~~a~~<br>~~GOO~~|nA<br>~~a~~|
|Qg<br>~~a a~~<br>~~a~~|Total Gate Charge<br>~~a~~|ID=12A<br>VDS=15V<br>VGS=4.5V<br>~~a~~<br>~~CT~~|-<br>~~a~~<br>~~GOO~~<br>~~CT~~|23<br>~~a~~<br>~~GOO~~<br>~~CT~~|36.8<br>~~a~~<br>~~GOO~~<br>~~CT~~|nC<br>~~a~~<br>~~CT~~|
|Qgs<br>~~a~~|Gate-Source Charge||-<br>~~Py~~|7<br>~~Py~~|-<br>~~Py~~|nC<br>~~Py~~|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~Ty~~<br>~~CT~~|11<br>~~Ty~~|-<br>~~Ty~~|nC<br>~~Ty~~|
|td(on)<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=19A<br>RG=3.3Ω<br>VGS=10V<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~CT~~<br>~~CT~~|11|-|ns|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~CT~~<br>~~CT~~|57|-|ns|
|td(off)<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~CT~~<br>~~Py~~|32<br>~~Py~~|-<br>~~Py~~|ns<br>~~Py~~|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~Ty~~<br>~~CT~~|14<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|Ciss<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=15V<br>f=1.0MHz<br>~~CT~~|-<br>~~CT~~|2100|3360|pF|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~CT~~<br>~~pf~~|310<br>~~pf~~|-<br>~~pf~~|pF<br>~~pf~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~Py~~|245<br>~~Py~~|-<br>~~Py~~|pF<br>~~Py~~|
|Rg<br>~~a OO~~|Gate Resistance<br>~~OO~~|f=1.0MHz<br>~~OO~~|-<br>~~OO~~|1.5<br>~~OO~~|3<br>~~OO~~|Ω<br>~~OO~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=19A, VGS=0V|-|-|1.2|V|
|trr|Reverse RecoveryTime|IS=19A,VGS=0V,<br>dI/dt=100A/µs|-|16|-|ns|
|Qrr|Reverse RecoveryCharge||-|7|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

- 2.Pulse test 

3.Surface mounted on 1 in[2] 2oz copper pad of FR4 board, t <10sec; 135[o] C/W when mounted on min. copper pad. 

- 4.Maximum current limited by package. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

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160 100<br>T A =25 [o] C 10V T A = 150 [o] C 10V<br>7.0V 7.0V<br>6.0V 80 6.0V<br>120 yo 5.0V fo 5.0V<br>V  G S = 4.0V<br>V GS  = 4.0V 60<br>80<br>40<br>40<br>20<br>0 Cn) 0 ottERE<br>0 1 2 3 4 5 6 0 1 2 3 4 5<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>8 2.0<br>I D = 12A I D =19A<br>T A =25 ℃ V GS  =10V<br>7<br>1.6<br>6<br>1.2<br>5 ALE EEEEENEIEE<br>0.8<br>4<br>3 0.4<br>2 4 6 8 10 -100 -50 0 50 100 150<br>fete V GS  , Gate-to-Source Voltage (V) |  ECE T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>20 2.0<br>I D =250uA<br>16 FETED 1.6<br>12 1.2<br>T j =150 [o] C T j =25 [o] C<br>8 0.8<br>4 0.4<br>0 CEU) 0.0 Ege:<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) (m DS(ON)<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

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8 3000 f=1.0MHz<br>I D = 12 A<br>V DS =15V<br>2400<br>6<br>C iss<br>1800<br>4 -,- || Le, liye ||<br>i} i}<br>1200 II<br>| |<br>2 [ly] [-]<br>600 \ [—,-bL-,] if |<br>C  oss<br>C  rss<br>0 0<br>0 10 20 30 40 1 6 11 16 21 26 31 36<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

## **Fig 8. Typical Capacitance Characteristics** 

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1000 1<br>oe seenib oe as aa oo oohind Duty factor=0.5<br>(Eo os coddl | A<br>100 Operation in this eeaa << eeRS HH SS SetiT i Ti Lu Ahea [|]<br>area limited by 0.2<br>R DS(ON) I =23K05 Deby fg = 3 =]5 22 | —___Y<br>0.1<br>10 LWA1 ame=i HA Ho!Nu NSOSON- NaN  NORNnAH = 4fitfoee+141 0.1 i= zea”eA400|| A<br>ee eee ee TO 0.05 ea<br>1 feaooroob = NeosNNNOS GaNEN San 100us10us 7z 0.02 ieeeeoAAeTTee<br>0.01<br>a ee eee ee 1ms meee 22074 i)<br>Sr Tomp = ra PDM<br>0.1 3 nop as rae 10ms 0.01 Single Pulse t<br>oeSPHTT seuercesscapTTAMP TTTSree ss 7 pesteTATNealTT TPdaearn 100ms LT TS aeineiroaEeeeTE] Duty factor = t/T q|Seof| T | | |<br>0.01 = tS SH St SH at SEE = JH EH + Peak T j  = P DM  x R thja  + T a<br>DLITodeZEALTHRIEFLTLTAAADIFITAAAHHRe T A =25 [o] C > raioot + tas nad STA> astAAtst DC Rthia=135  ℃ /W<br>Single  Pulse ee<br>0.001 eos ee 0.001 FAI |<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


## **Fig 9. Maximum Safe Operating Area** 

## **Fig 10. Effective Transient Thermal Impedance** 

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100<br>V DS =5V<br>80<br>60<br>40<br>T j =150 [o] C<br>20 T  j =25 [o] C<br>T j = -55 [o] C<br>0<br>0 1 2 3 4 5 6<br>V GS  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Transfer Characteristics** 

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24<br>20<br>16<br>12<br>8<br>4<br>0<br>25 50 75 100 125 150<br>T A  , Ambient Temperature (  [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 12. Drain Current v.s. Ambient Temperature** 

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2 5<br>I D  =1mA<br>1.6 4<br>1.2 Se] 3 PEE<br>PP<br>0.8 2<br>0.4 1<br>0 EL) 0 PSS<br>-100 -50 0 50 100 150 0 50 100 150<br>T  j  , Junction Temperature ( [o] C) T A , Ambient Temperature( [o] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>40<br>T j =25 [o] C<br>30<br>20<br>10<br>4.5V<br>V GS =10V<br>0<br>0 20 40 60 80 100 120<br>I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

**Fig 15. Typ. Drain-Source on State Resistance** 

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**XP3NA4R2YT** 

## ~~) lta~~ **MARKING INFORMATION** 

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Part Number<br>3NA4R2<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


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## **Package  Outline  :  PMPAK 3x3** 

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e b2<br>SYMBOLS Millimeters<br>1<br>c 1 = e ea e = --- MIN NOM MAX<br>A 2.90 3.10 3.40<br>g B 2.20 2.45 2.80<br>e 0.60 0.65 0.70<br>c 2 C c 4 b2 0.20 0.30 0.40<br>C 2.90 3.10 3.40<br>Ty c1 0.10 0.30 0.50<br>| j i ; —}--- c2 1.20 1.70  + — 2.20<br>c 3 it es ee<br>a —}--}-+-— c3 0.10 0.38 0.65<br><—_ B —_><br>D 0.65 0.80 1.05<br>A<br>—__ A1 _ —}--- d1 0.00 0.10 + 0.20 —<br>es E 0.10 0.18 0.25<br>ee<br>BOTTOM VIEW es A1 2.900 3.30 3.600<br>ee<br>es c4 2.900 3.30 3.600<br>ee<br>g 0.20 (ref)<br>d1<br>D<br>.<br>| oh E ee ee<br>**----- End of picture text -----**<br>


1.All Dimension Are In Millimeters. 

2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-YT8-G-v06 

PMPAK-3x3(YT) 

7 

**PMPAK 3X3** 

## **PMPAK3X3  FOOTPRINT ：** 

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Draw No. M1-YT8-G-v06 

1 

PMPAK-3x3(YT) 

8 



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- [Supplier page](https://es.farnell.com/yageo-xsemi/xp3na4r2yt/mos-n-30v-21-5a-4-2mohm-pmpak/dp/4461765RL)
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