# Power MOSFET, N Channel, 20 V, 300 mA, 0.76 ohm, SOT-723, Surface Mount
**URL**: https://novapart.co/products/XP222N03017R-G/power-mosfet-n-channel-20-v-300-ma-076-ohm-sot-723
**SKU**: XP222N03017R-G
**Manufacturer**: TOREX
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0450
**Stock**: 1000+
**Lead Time**: 92 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | XP222N0301xx-G |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-723 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 300mA |
| Drain Source On State Resistance | 0.76ohm |
| Gate Source Threshold Voltage Max | 800mV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3577856/)
## **XP222N03017R-G**
ETR11080-001
## N-channel MOSFET 20V, 0.3A
## ■APPLICATIONS
## ■FEATURES
●Switching
**On-State Resistance** : RDS(on)＝1.3Ω@VGS =4.5V **Driving voltage** : 1.8V **Environmentally Friendly** : EU RoHS Compliant, Pb Free
**==> picture [411 x 249] intentionally omitted <==**
**----- Start of picture text -----**
■ EQUIVALENT CIRCUIT ■
●SOT-723
Drain
3
3
1 2
1 2
Gate Source
■ PRODUCT NAME
PRODUCT NAME PACKAGE ORDER UNIT
XP222N03017R-G * SOT-723 8,000pcs/ Reel
[®t]
**----- End of picture text -----**
## ■ PIN CONFIGURATION
* The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant
## ■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (DC) ID 0.3 A Drain Current (Pulse)[(*1)] IDP 0.6 A Channel Power Dissipation[(*2)] Pd 0.35 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~150 ℃ (*1) PW≦10μs,duty cycle≦1% (*2) When implemented on a PCB defined by JESD51-7 ~~=[S55]~~
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**XP222N03017R-G** —_— ss, ■ELECTRICAL CHARACTERISTICS
Ta=25℃
**==> picture [474 x 284] intentionally omitted <==**
**----- Start of picture text -----**
||||||||||
|---|---|---|---|---|---|---|---|---|
|PARAMETER|SYMBOL|TEST CONDITIONS|MIN.|TYP.|MAX.|UNITS|
|a|
|Drain-Source Breakdown Voltage|V(BR)DSS|ID= 100μA, VGS=0V|20|-|-|V|
|Drain-Source Leakage Current|IDSS|VDS= 20V, VGS= 0V|-|-|1|μA|
|Gate-Source Leakage Current|IGSS|VGS= ±8V, VDS= 0V|-|-|±10|μA|
|Gate Threshold Voltage|VGS(off)|ID= 250uA, VDS= VGS|0.4|0.8|1.3|V|
|VGS= 4.5V, ID= 100mA|-|0.76|1.3|Ω|
|Drain-Source On Resistance|RDS(on)|VGS= 2.5V, ID= 100mA|-|1.2|1.8|Ω|
|VGS= 1.8V, ID= 10mA|-|1.8|3.3|Ω|
|Input Capacitance|Ciss|-|18|-|pF|
|ee ————-_—|VDS= 10V, VGS= 0V|
|Output Capacitance|Coss|-|5|-|pF|
|f=1MHz|
|Reverse Transfer Capacitance|Crss|-|3|-|pF|
|ee|Turn-on Delay Time|td(on)|ee|-|11|-|ns|
|Rise Time|tr|VDD= 10V, ID= 100mA|-|11|-|ns|
|Turn-off Delay Time|td(off)|VGS= 4.5V|-|45|-|ns|
|Fall Time|tf|-|32|-|ns|
|Total Gate Charge|Qg|-|0.34|-|nC|
|VDS= 10V, ID= 100mA|
|Gate-Source Charge|Qgs|VGS= 6V|-|0.03|-|nC|
|Gate-Drain Charge|Qgd|-|0.13|-|nC|
|=|Diode Forward Voltage|VSD|IS= 100mA, VGS= 0V|SSE|-|0.77|1.2|V|
**----- End of picture text -----**
## ■NOTES ON USE
## 1. Please use this IC within the absolute maximum ratings.
Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC.
## 2. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.
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**XP222N03017R-G**
## ■TYPICAL PERFORMANCE CHARACTERISTICS
- (1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Gate-Source Voltage
**==> picture [477 x 655] intentionally omitted <==**
**----- Start of picture text -----**
0.6 1
4.5V VDS=10V
3.5V
0.5 | ff 2.5V =
Ta=125℃
0.4 0.1
WO a
0.3
1.8V 25℃
0.2 0.01
0.1 VGS=1.5VGS=1.5V=1.5V -25℃
Ta=25℃
0 Z a 0.001 if
0.0 0.5 1.0 1.5 0 1 2 3
Drain-Source Voltage: VDSDS (V) Gate-Source Voltage: VGS (V)
(3) Drain-Source On Resistance vs. Gate-Source Voltage (4) Drain-Source On Resistance vs. Ambient Temperature
4 4
Ta=25℃
3 3
VGS=1.8V
2 2
PI 2.5V yp
1 ID=100mA 1 4.5V
N f f ee
0 | TT 0 GT eeTT
0 2 4 6 -50 0 50 100 150
Ambient Temperature: Ta (℃)
Gate-Source Voltage: VGS (V)
(5) Drain-Source On Resistance vs. Drain Current (6) Source Current vs. Diode Forward Voltage
4.0
1
Ta=25℃
1.8V
3.0 Ta=125℃
0.1
2.0
2.5V
25℃
0.01
1.0 a s e /a
-25℃
VGS=4.5V
0.0 | 0.001 FPie YE
0.0 0.2 0.4 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Drain Current: ID (A) Diode Forward Voltage: VSD (V)
(A)
D D
Drain Current : I
(on) (Ω)
DS (on) (Ω)
Drain-Source On Resistance: R DS
Drain-Source On Resistance: R
(on) (Ω)
DS
(A)
S
Source Current: I
Drain-Source On Resistance: R
**----- End of picture text -----**
**==> picture [197 x 181] intentionally omitted <==**
**----- Start of picture text -----**
0.6
4.5V
3.5V
0.5 | ff 2.5V
0.4
WO
0.3
1.8V
0.2
VGS=1.5VGS=1.5V=1.5V
0.1
Ta=25℃
Z a
0
0.0 0.5 1.0 1.5
Drain-Source Voltage: VDSDS (V)
(A)
D
Drain Current: I
**----- End of picture text -----**
- (3) Drain-Source On Resistance vs. Gate-Source Voltage (4) Drain-Source On Resistance vs. Ambient Temperature
- (5) Drain-Source On Resistance vs. Drain Current (6) Source Current vs. Diode Forward Voltage
TN 3/6
## ■TYPICAL PERFORMANCE CHARACTERISTICS
- (7) Ciss, Coss, Crss vs. Drain-Source Voltage (8) Gate-Source Voltage vs. Gate Charge
**==> picture [206 x 417] intentionally omitted <==**
**----- Start of picture text -----**
1000
f=1MHz, Ta=25℃
a aa
es a
100
a Ciss
10
Coss
Crss
1 es
0 5 10 15 20
Drain-Source Voltage: VDS (V)
(9) Area of Safe Operation
1
RDS(on)
(VGS=4.5V) 100µs
Limit 1ms
10ms
CART S
0.1
DC Operation 100ms
1s
Ta=25℃ FEE cil
Single pulse
Mounted on a FR4 board
(8700mm2 x 1.6mm)
pS LATE LUI
0.01
0.1 1 10 100
Drain-Source Voltage: VDS (V)
Capacitance: Ciss, Coss, Crss (pF)
(A)
D
Drain Current: I
**----- End of picture text -----**
## (9) Area of Safe Operation
**==> picture [198 x 181] intentionally omitted <==**
**----- Start of picture text -----**
6
VDS=10V, ID=100mA
Po LU
4
p f
2
Ta=25℃
0 fj | | |
0.0 0.1 0.2 0.3 0.4
Gate Charge: Qg (nC)
(V)
GS
Gate-Source Voltage: V
**----- End of picture text -----**
a 4/6
**XP222N03017R-G**
## ■PACKAGING INFORMATION
For the latest package information go to, www.torexsemi.com/technical-support/packages
PACKAGE OUTLINE / LAND PATTERN THERMAL CHARACTERISTICS SOT-723 SOT-723 PKG JESD51-7 Board SOT-723 Power Dissipation ~~a~~ ■MARKING RULE SOT-723 ●SOT-723 ① represents product series MARK PRODUCT SERIES ① 4 XP222N0301**-G 3 ~~=~~ ① ② ③ ②,③ represents production lot number。 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ repeated I，J，O，Q，W excluded) J，O，Q，W excluded) O，Q，W excluded) 1 2
(G，I，J，O，Q，W excluded)
*No character inversion used
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1. The product and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date.
2. The information in this datasheet is intended to illustrate the operation and characteristics of our products. We neither make warranties or representations with respect to the accuracy or completeness of the information contained in this datasheet nor grant any license to any intellectual property rights of ours or any third party concerning with the information in this datasheet.
3. Applicable export control laws and regulations should be complied and the procedures required by such laws and regulations should also be followed, when the product or any information contained in this datasheet is exported.
4. The product is neither intended nor warranted for use in equipment of systems which require extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss of human life, bodily injury, serious property damage including but not limited to devices or equipment used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and other transportation industry and 5) safety devices and safety equipment to control combustions and explosions. Do not use the product for the above use unless agreed by us in writing in advance.
5. Although we make continuous efforts to improve the quality and reliability of our products; nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal injury and/or property damage resulting from such failure, customers are required to incorporate adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention features.
6. Our products are not designed to be Radiation-resistant.
7. Please use the product listed in this datasheet within the specified ranges.
8. We assume no responsibility for damage or loss due to abnormal use.
9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex Semiconductor Ltd in writing in advance.
TOREX SEMICONDUCTOR LTD.
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---
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