# Power MOSFET, P Channel, 30 V, 3 A, 0.045 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3534781/)

**URL**: https://novapart.co/products/XP202A0003MR-G/power-mosfet-p-channel-30-v-3-a-0045-ohm-sot-23
**SKU**: XP202A0003MR-G
**Manufacturer**: TOREX
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2930
**Stock**: 1000+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | XP202 |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 2.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3534781/)

ETR1128-004 

## **XP202A0003MR-G** OO 

## P-channel 4V (G-S) MOSFET 

## ■FEATURES 

・Low On Resistance 

## ■APPLICATIONS 

● Switching 

・Ultra High Speed Switching 

・-4V Driving 

・EU RoHS Compliant, Pb Free 

■PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP202A0003MR-G SOT-23 3,000/Reel ~~——~~ * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. 

## ■ ABSOLUTE MAXIMUM RATINGS 

|PARMETER<br>~~===:~~|SYMBOL<br>~~===:~~|RATINGS<br>~~===:~~|UNITS<br>~~===:~~|
|---|---|---|---|
|Drain-Source Voltage<br>~~===:~~|VDSS<br>~~===:~~|-30<br>~~===:~~|V<br>~~===:~~|
|Gate-Source Voltage<br>~~===:~~|VGSS<br>~~===:~~|±20<br>~~===:~~|V<br>~~===:~~|
|Drain Current(DC)<br>~~===:~~|ID<br>~~===:~~|-3<br>~~===:~~|A<br>~~===:~~|
|Drain Current(Pulse)(*1)<br>~~===:~~|IDP<br>~~===:~~|-12<br>~~===:~~|A<br>~~===:~~|
|Channel Power Dissipation(*2)<br>~~===:~~|Pd<br>~~===:~~|1<br>~~===:~~|W<br>~~===:~~|
|Channel Temperature<br>~~===:~~|Tch<br>~~===:~~|+150<br>~~===:~~|℃<br>~~===:~~|
|Storage Temperature<br>~~===:~~|Tstg<br>~~===:~~|- 55 ~ +150<br>~~===:~~|℃<br>~~===:~~|



## ■PIN CONFIGURATION 

**==> picture [47 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
1. Gate<br>2. Source<br>3. Drain<br>**----- End of picture text -----**<br>


SOT-23(TOP VIEW） 

## ■ ELECTRICAL CHARACTERISTICS 

|PARAMETER<br>~~ee~~|SYMBOL<br>~~ee~~|TEST CONDITIONS<br>~~ee~~|LIMITS<br>~~ee~~|LIMITS<br>~~ee~~|LIMITS<br>~~ee~~|UNITS<br>~~ee~~|
|---|---|---|---|---|---|---|
||||MIN.<br>~~ee~~|TYP.<br>~~ee~~|MAX.<br>~~ee~~||
|Drain-Source Breakdown Voltage<br>~~ee~~|V(BR)DSS<br>~~ee~~|ID=-1mA,VGS=0V<br>~~ee~~|-30<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|Drain-Source Cut-Off Current|IDSS|VDS=-30V,VGS=0V|-|-|-1|μA|
|Gate-Source Leakage Current|IGSS|VGS=±16V,VDS=0V|-|-|±10|μA|
|Gate-Source Cut-Off Voltage|VGS(off)|VDS=-10V,ID=-1mA|-1.2|-|-2.6|V|
|Forward Transfer Admittance||yfs||VDS=-10V,ID=-3A|-|8.0|-|S|
|Drain-Source ON Resistance|RDS(ON)1|ID=-1.5A,VGS=-10V|-|45|-|mΩ|
||RDS(ON)2|ID=-1.0A,VGS=-4.5V|-|67|-|mΩ|
||RDS(ON)3|ID=-1.0A,VGS=-4V|-|76|-|mΩ|
|Input Capacity|Ciss|VDS=-10V,f=1MHz|-|435|-|pF|
|Output Capacity|Coss|VDS=-10V,f=1MHz|-|110|-|pF|
|Feedback capacity|Crss|VDS=-10V,f=1MHz|-|85|-|pF|
|Turn on Delaytime|td(on)|ID=-1A|-|6|-|ns|
|Rise Time|tr|ID=-1A|-|12|-|ns|
|Turn off DelayTime|td(off)|ID=-1A|-|28|-|ns|
|Fall Time|tf|ID=-1A|-|10|-|ns|
|All Gate Charge Amount|Qg|VDS=-15V,VGS=-10V,ID=-3A|-|10|-|nC|
|Gate Source Charge Amount|Qgs|VDS=-15V,VGS=-10V,ID=-3A|-|1.2|-|nC|
|Gate Drain Charge Amount|Qgd|VDS=-15V,VGS=-10V,ID=-3A|-|2.2|-|nC|
|Diode Forward Voltage|VSD|IS=-3A,VGS=0V|-|-0.8|-1.2|V|



1/5 

**XP202A0003MR-G** 

## ■SWITCHING-TIME TEST CIRCUIT 

**==> picture [388 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
0V<br>90%<br>S<br>50Ω VI<br>VI 10%<br>G 0V<br>90% 90%<br>Oscilloscope D VO VO<br>10% 10%<br>RL td(on) tr td(off) tf<br>Oscilloscope<br>**----- End of picture text -----**<br>


## ■EQUIVALENT CIRCUIT 

## ■PACKAGING INFORMATION 

●SOT-23 

## ■MARKING RULE 

① represents product series 

**==> picture [476 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|3|MARK|PRODUCT SERIES|
|6|XP202*******-G|
|①|②|③|④|⑤|
|②|③ represents product group and number|
|MARK|PRODUCT|PRODUCT|
|p|1|o|o|2|-———|PRODUCT SERIES|
|②|③|GROUP|NUMBER|
|A|D|00|03|XP202A0003**-G|

**----- End of picture text -----**<br>


④，⑤ represents production lot number 

01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ repeated (G, I, J, O, Q, W excluded) 

a 2/5 

**XP202A0003MR-G** 

## ■TYPICAL PERFORMANCE CHARACTERISTICS 

(1) Drain Current vs. Drain-Source Voltage 

**==> picture [223 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
XP202A0003MR<br>-4.0 Ta= 25℃， Pulse Test<br>-3.5<br>-16.0V<br>-3.0 -10.0V<br>-6.0V<br>-2.5<br>-4.5V<br>-2.0<br>-1.5<br>-4.0V VGS= -2.5V<br>-1.0 -3.5V<br>-3.0V<br>-0.5<br>0.0<br>0.0 -0.2 -0.4 -0.6 -0.8 -1.0<br>Drain-Source Voltage： VDS  (V)<br>  (A)<br> ID<br>Drain Current：<br>**----- End of picture text -----**<br>


(2) Drain Current vs. Drain-Source Voltage 

**==> picture [224 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
XP202A0003MR<br>-6 VDS= -10V， Pulse Test<br>-5<br>-4<br>-3<br>Ta= 75℃<br>-2<br>Ta= 25℃<br>-1<br>Ta= -25℃<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Gate-Source Voltage： VGS  (V)<br>  (A)<br> ID<br>Drain Current：<br>**----- End of picture text -----**<br>


(4) Drain-Source On-State Resistance vs. Ambient Temperature 

(3) Drain-Source On-State Resistance vs. Gate-Source Voltage 

**==> picture [487 x 435] intentionally omitted <==**

**----- Start of picture text -----**<br>
XP202A0003MR XP202A0003MR<br>300 Ta= 25℃ 140<br>250 120 VGS= -4.0V,  ID= -1.0A<br>200 100 VGS= -4.5V,  ID= -1.5A<br>80<br>150 I D = -1.5A<br>60<br>100 ID= -1.0A<br>40<br>50<br>20 V GS = -10V,  I D = -1.5A<br>0 0<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -50 -25 0 25 50 75 100 125 150<br>Gate-Source Voltage： VGS  (V) Ambient Temperature： Ta  (℃)<br>(5) Forward Transfer Admittance vs. Drain Current  (6) Source Current vs. Diode Forward Voltage<br>XP202A0003MR XP202A0003MR<br>100 VDS= -10V 10 VGS= 0V<br>Ta= 75℃<br>Ta= -25℃<br>10 1 Ta=25℃<br>Ta=25℃<br>1 Ta=75℃ 0.1<br>Ta=-25℃<br>0.1 0.01<br>0.01 0.1 1 10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2<br>Drain Current： ID  (A) Diode Forw ard Voltage： VSD  (V)<br>Ω) Ω)<br>ｍ （ｍ<br>(on)  (<br>(on)<br>DS<br>DS<br>R<br>：<br>Resistance: R<br>Static Drain-source On-State Static Drain-source On-State Resistance<br>：<br>  (A)<br> IS<br>|yfs|  (S) ：<br>Source Current<br>Forward Transfer Admittance<br>**----- End of picture text -----**<br>


- (5) Forward Transfer Admittance vs. Drain Current 

3/5 

**XP202A0003MR-G** ——s ~~s,tits~~ 

## ■TYPICAL PERFORMANCE CHARACTERISTICS 

(8) Ciss, Coss, Crss vs. Drain-Source Voltage 

(7) Switching Time vs. Drain Current 

## **XP202A0003MR** 

**==> picture [524 x 436] intentionally omitted <==**

**----- Start of picture text -----**<br>
XP202A0003MR<br>1000 VGS= -10V, VDS= -15V 1000 f=1MHz<br>Ciss<br>100<br>tf<br>td(off) Coss<br>100<br>tr<br>Crss<br>10<br>td(on)<br>1 10 —<br>0.1 1 10 0 5 10 15 20 25 30<br>Drain Current： ID  (A) Drain-Source Voltage： VDS  (V)<br>(9) Gate-Source Voltage vs. Gate Charge  (10) Area of Safe Operation<br>XP202A0003MR XP202A0003MR<br>-10 VDS= -15V,  ID= -3A 100<br>-9 Operation in this area is<br>-8 I D =-12A limited by R DS (on)<br>10<br>-7<br>I D =-3A<br>-6<br>0.1ms<br>-5 1<br>1ms<br>-4<br>-3 10ms<br>0.1 Ta=25℃ 100ms<br>-2 Single pulse 1000ms<br>-1 When mounted on ceramic substrate DC Ope ration<br>(900mm [2]  X 0.8mm)<br>0 0.01<br>0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10 100<br>Gate Charge: Qg  (nc) Drain-Source Voltage: VDS  (V)<br> t  (ns)<br>：<br>Switching Time Ciss, Coss, Crss  (pF)<br>  (V)<br>GS<br> V   (A)<br>Gate-Source Voltage： Drain Current: ID<br>**----- End of picture text -----**<br>


4/5 

**XP202A0003MR-G** 

1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics.  Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 

2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 

3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 

4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. 

   - (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 

5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 

6. We assume no responsibility for damage or loss due to abnormal use. 

7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 

ON 5/5 



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