# MOS P -100V -3.4A 135MOHM PMPAK-3X3

![Product image](https://novapart.co/image/farnell:4461753RL/)

**URL**: https://novapart.co/products/XP10P135YT/mos-p-100v-34a-135mohm-pmpak-3x3
**SKU**: XP10P135YT
**Manufacturer**: YAGEO XSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6010
**Stock**: 10+
**Lead Time**: 246 days (indicative)

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4461753RL/)

## **XP10P135YT Halogen-Free Product** ~~[~~ _**P-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

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D BVDSS -100V<br>RDS(ON) 135m Ω<br>G<br>S<br>D<br>D<br>D<br>process technology to D<br>switching performance.<br>device for use in a wide<br>S<br>conversion application<br>backside heat sink to<br>SS G<br>PMPAK [®]  3x3<br>**----- End of picture text -----**<br>


## ▼ **Simple Drive Requirement** 

▼ **Small Size & Lower Profile** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP10P135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The PMPAK[®] 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage|-100|V|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V|-9.5|A|
|ID@TA=25℃<br>~~a~~|Drain Current3, VGS@ 10V|-3.4|A|
|ID@TA=70℃<br>~~a~~|Drain Current3, VGS@ 10V|-2.7|A|
|IDM<br>~~a~~|Pulsed Drain Current1|-13.6|A|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|3.13|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|12.5|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|5|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|40|℃/W|



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## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~a~~|VGS=0V, ID=-250uA<br>~~ee~~<br>~~ee ee~~|-100<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~|VGS=-10V, ID=-3A<br>~~ee ee~~|-<br>~~ee~~|-<br>~~ee~~|135<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=-4.5V, ID=-2A<br>~~ee ee~~|-<br>~~ee~~|-<br>~~ee~~|150<br>~~ee~~|mΩ<br>~~ee~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, ID=-250uA<br>~~ee ee~~|-1.3<br>~~ee~~|-<br>~~ee~~|-3<br>~~ee~~|V<br>~~ee~~|
|gfs|Forward Transconductance|VDS=-10V, ID=-3A|-|13|-|S|
|IDSS<br>~~a~~|Drain-Source Leakage Current<br>~~a~~<br>~~a~~|VDS=-80V, VGS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-25<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~GD~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~GD~~|-<br>~~a~~<br>~~GD~~|-<br>~~a~~<br>~~GD~~|+<br>100<br>~~a~~<br>~~GD~~|nA<br>~~a~~<br>~~GD~~|
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge2<br>~~a~~<br>~~GD~~<br>~~a~~|ID=-2A<br>VDS=-50V<br>VGS=-10V<br>~~a~~<br>~~GD~~<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~GD~~<br>~~a~~<br>~~a~~|29<br>~~a~~<br>~~GD~~<br>~~a~~<br>~~a~~|46.4<br>~~a~~<br>~~GD~~<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~GD~~<br>~~a~~<br>~~a~~|
|Qgs<br>~~a~~|Gate-Source Charge<br>~~a~~||-<br>~~a~~<br>~~a~~|6<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~a~~|Gate-Drain("Miller")Charge<br>~~a~~||-<br>~~a~~<br>~~a~~|5<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~a~~|Turn-on DelayTime<br>~~a~~|VDS=-50V<br>ID=-1A<br>RG=3.3Ω<br>VGS=-10V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|12<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tr<br>~~a~~|Rise Time<br>~~a~~||-<br>~~a~~<br>~~a~~|5<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~a~~|Turn-off DelayTime<br>~~a~~||-<br>~~a~~<br>~~a~~|42<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~a~~|Fall Time<br>~~a~~||-<br>~~a~~<br>~~a~~|15<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|Ciss<br>~~a~~|Input Capacitance<br>~~a~~|VGS=0V<br>VDS=-50V<br>f=1.0MHz<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|1625<br>~~a~~<br>~~a~~|2600<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|Coss<br>~~a~~|Output Capacitance||-<br>~~PT~~|60<br>~~PT~~|-<br>~~PT~~|pF<br>~~PT~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~||-<br>~~a~~<br>~~a~~|50<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|Rg<br>~~a~~|Gate Resistance<br>~~a~~<br>~~OC~~|f=1.0MHz<br>~~a~~<br>~~OC~~|-<br>~~a~~<br>~~OC~~|6.3<br>~~a~~<br>~~OC~~|12.6<br>~~a~~<br>~~OC~~|Ω<br>~~a~~<br>~~OC~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=-2.4A, VGS=0V|-|-|-1.3|V|
|trr|Reverse RecoveryTime|IS=-2A, VGS=0V<br>dI/dt=-100A/µs|-|25|-|ns|
|Qrr|Reverse RecoveryCharge||-|26|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

## 2.Pulse test 

3.Surface mounted on 1 in[2] 2oz copper pad of FR4 board, t <10sec ; 210[o] C/W when mounted on min. copper pad. 

4.Starting Tj=25[o] C , VDD=-50V , L=1mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

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20<br>T A A = 150 150 [[o]] C -10V<br>-7.0V<br>16 -6.0V<br>-5.0V<br>V  G = -4.0V<br>12<br>8 /<br>fo<br>4<br>Ae<br>0 eEeESEEES<br>0 2 4 6 8 10<br>-V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br> , Drain Current (A)-ID<br>D<br>-ID<br>**----- End of picture text -----**<br>


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20 20<br>T A =25 [o] C -10V T A A = 150 150 [[o]] C -10V<br>-7.0V -7.0V<br>16 -6.0V 16 -6.0V<br>-5.0V -5.0V<br>V  G = -4.0V V  G = -4.0V<br>12 12<br>8 WE 8 /<br>y SEceaeee fo<br>4 4<br>PERE Ae<br>0 PEE 0 eEeESEEES<br>0 2 4 6 8 10 0 2 4 6 8 10<br>-V DS  , Drain-to-Source Voltage (V) -V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>125 2.4<br>I D =  -2 A I D = -3A<br>T A =  25 ℃ 2.0 V G = -10V<br>115 P| 1.6 FREES<br>1.2<br>\ HSE HSEIES tt<br>105 0.8<br>0.4<br>95 — 0.0<br>2 4 6 8 10 -100 -50 0 50 100 150<br>-V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>10 2.0<br>I D = -250uA<br>8 1.6<br>6 Pe] 1.2 ae<br>T j =150 [o] C T j =25 [o] C<br>4 0.8<br>2 0.4<br>0 0.0<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>-V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br> , Drain Current (A)-ID  , Drain Current (A)-ID<br>Ω )<br> (m DS(ON)<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)-IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

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          Reverse Diode<br>**----- End of picture text -----**<br>


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12 3200 f=1.0MHz<br>I D =  -2A<br>V DS =  -50 V<br>10<br>2400<br>8<br>C iss<br>6 1600<br>4<br>800<br>2 C oss<br>C rss<br>0 0<br>0 10 20 30 40 1 21 41 61 81 101 121<br>Q G  , Total Gate Charge (nC) -V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

**Fig 8. Typical Capacitance Characteristics** 

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100 1<br>Duty factor=0.5<br>Sista id= 44 FIs = Br rsine =1=14 ben 4 Fo ee eee<br>Soba dt taut De eee cca a a ci itie<br>10 iia i a Sy Rano 0.2<br>Operation in this area oT ANS er eTait AHLTTT TT<br>limited by RDS(ON) oe ote eer ate 0.1 0.1 a<br>1 eel CN ONIN eri 100us 0.05 Soe ei WNSalSemel<br>[=a «4 Hi Ne tga No NG i PoE — Yr<br>ginj\=Aat # = A\eistgis NEIQS ae aa bie Li<br>0.02<br>1ms<br>0.1 oy . mn ATID SCONCE 10ms J 0.01 JA, Ll PDM il<br>EEE CEEEEE EES 0.01 TAME ELL t<br>Single Pulse T<br>717 Finj> 777M Nn 100ms | Kk >1<br>0.01 Duty factor = t/T<br>T A =25 [o] C Peak T j  = P DM  x R thja  + T a<br>1s Rthia=210  ℃ /W<br>Pana Single  Pulse Sala DC<br>0.001 es i i 0.001<br>0.01 Lotti 0.1 1 10 PE 100 1000 0.0001 ma 0.001 0.01 0.1 1 10 100 | 1000<br>-V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thja<br>(A)<br>D<br>-I<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

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30<br>V DS = -10V<br>20<br>10<br>T j =150 [o] C<br>T j =25 [o] C<br>0<br>0 1 2 3 4 5 6<br>-V GS  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 11. Transfer Characteristics** 

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5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>T A  , Ambient Temperature (  [o] C )<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 12. Drain Current v.s. Ambient Temperature** 

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2 4<br>I D  = -1mA<br>1.6<br>PEREEEEEEE] 0 3 feberfecbefedes<br>1.2<br>2<br>0.8<br>1<br>0.4<br>0 0<br>-100 -50 0 50 100 150 0 50 100 150<br>fii Be<br>T  j  , Junction Temperature ( [o] C) T A , Ambient Temperature( [o] C)<br>              Fig 13. Normalized BVDSS  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>800<br>T j =25 [o] C<br>600 EEE:<br>400<br>200<br>-4.5V<br>pees V GS = -10V<br>0 petal<br>0 4 8 12 16 20 24<br>-I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 15. Typ. Drain-Source on State Resistance** 

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## ~~) lta~~ **MARKING INFORMATION** 

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Part Number<br>10P135<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


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## **Package  Outline  :  PMPAK 3x3** 

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e b2<br>SYMBOLS Millimeters<br>1<br>c 1 = e ea e = --- MIN NOM MAX<br>A 2.90 3.10 3.40<br>g B 2.20 2.45 2.80<br>e 0.60 0.65 0.70<br>c 2 C c 4 b2 0.20 0.30 0.40<br>C 2.90 3.10 3.40<br>Ty c1 0.10 0.30 0.50<br>| j i ; —}--- c2 1.20 1.70  + — 2.20<br>c 3 it es ee<br>a —}--}-+-— c3 0.10 0.38 0.65<br><—_ B —_><br>D 0.65 0.80 1.05<br>A<br>—__ A1 _ —}--- d1 0.00 0.10 + 0.20 —<br>es E 0.10 0.18 0.25<br>ee<br>BOTTOM VIEW es A1 2.900 3.30 3.600<br>ee<br>es c4 2.900 3.30 3.600<br>ee<br>g 0.20 (ref)<br>d1<br>D<br>.<br>| oh E ee ee<br>**----- End of picture text -----**<br>


1.All Dimension Are In Millimeters. 

2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-YT8-G-v06 

PMPAK-3x3(YT) 

7 

**PMPAK 3X3** 

## **PMPAK3X3  FOOTPRINT ：** 

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Draw No. M1-YT8-G-v06 

1 

PMPAK-3x3(YT) 

8 



## Links

- [View this product on Novapart](https://novapart.co/products/XP10P135YT/mos-p-100v-34a-135mohm-pmpak-3x3)
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- [Supplier page](https://es.farnell.com/yageo-xsemi/xp10p135yt/mos-p-100v-3-4a-135mohm-pmpak/dp/4461753RL)
---

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