Image not available
Illustrative purposes only
X0115ML
Thyristor, 600 V, 150 µA, 500 mA, 800 mA, SOT-23, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: STMICROELECTRONICS
- Product type: Thyristors - SCRs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Surface Mount
- Holding Current Max: 5mA
- On State RMS Current: 800mA
- Thyristor Case Style: SOT-23
- Average On State Current: 500mA
- Gate Trigger Current Max: 150µA
- Gate Trigger Voltage Max: 800mV
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 7.6A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.119 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**X0115ML** Datasheet ## 0.8 A sensitive gate SCR thyristor in SOT23-3L **==> picture [52 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>G<br>K<br>A<br>G<br>K<br>SOT23-3L<br>**----- End of picture text -----**<br> ## **Features** - On-state rms current, 0.8 A sensitive - Repetitive peak off-state voltage, 600 V - Non-repetitive surge peak off-state voltage, 750 V - Narrow sensitive gate current range [30 to 150] µA - Compact SOT23-3L package: - Creepage distance of 1.1 mm - 9 mm² footprint ## **Applications** - Ground-fault circuit interrupter (GFI) - Arc-fault circuit interrupter (AFCI) - Overvoltage crowbar protection in power supplies - Capacitive ignition circuits - Low consumption triggering switches ## **Description** |**Product status link**|**Product status link**| |---|---| |X0115ML|| ||| |**Product summary**|| |**IT(RMS)**|0.8 A| |**VDRM/VRRM**|600 V| |**VDSM/VRSM**|750 V| |**IGT**|[30-150] µA| Thanks to highly sensitive triggering levels, X0115ML SCR thyristor is suitable for all applications where available gate current is limited. The X0115ML offers a high blocking voltage of 600 V, and a surge peak voltage of 750 V, ideal for applications like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI). The SOT23-3L package provides the smallest SCR footprint while keeping 1.1 mm creepage distance, guaranteeing 120 V functional insulation (UL-840) at level 2 pollution degree without extra certification. **DS13776** - **Rev 3** - **January 2022** For further information contact your local STMicroelectronics sales office. www.st.com **X0115ML Characteristics** ## **1 Characteristics** **Table 1. Absolute maximum ratings (limiting values)** |**Symbol**|**Parameters**|||**Value**|**Unit**| |---|---|---|---|---|---| |IT(RMS)|On-state RMS current (180° conduction angle)||TC= 41 °C|0.8|A| |IT(AV)|Average on-state current (180° conduction angle)|||0.5|A| |ITSM|Non repetitive surge peak on-state current<br>(Tjinitial = 25 °C)|tp= 8.3 ms|Tj= 25 °C|7.6|A| |||tp= 10 ms||7|| ||One surge every 500 ms, 50 surges|tp= 8.3 ms|TAMB= 105 °C|5|| |I2t|I2t value for fusing|tp= 10 ms|Tj= 25 °C|0.25|A2s| |dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr≤ 100 ns|f = 60 Hz|Tj= 25 °C|75|A/µs| |VDRM/ VRRM|Repetitive peak off-state voltage||Tj= 125 °C|600|V| |VDSM/ VRSM|Non repetitive surge peak off-state voltage|tp= 10 ms|Tj= 25 °C|750|V| |IGM|Peak forward gate current|tp= 20 µs|Tj= 125 °C|1.2|A| |PG(AV)|Average gate power dissipation||Tj= 125 °C|0.2|W| |Tstg|Storage junction temperature range|||-40 to +150|°C| |Tj|Operating junction temperature range|||-40 to +125|°C| **Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)** |**Symbol**|**Parameters**|**Value**|**Value**|**Unit**| |---|---|---|---|---| |IGT|VD= 12 V, RL= 33 Ω|Min.|30|µA| |||Max.|150|| |VGT||Max.|0.8|V| |VGD|VD= VDRM, RL= 3.3 kΩ, RGK= 1 kΩ, Tj= 125 °C|Min.|0.2|V| |VRG|IRG= 10 µA|Min.|5|V| |IH|IT= 50 mA, gate open, RGK= 1 kΩ|Max.|5|mA| |IL|IG= 1.2 IGT, RGK= 1 kΩ|Max.|6|mA| |dV/dt|VD= 67 % VDRM, gate open, RGK= 1 kΩ, Tj= 125 °C|Min.|80|V/µs| **Table 3. Static characteristics** |**Symbol**|**Test conditions**||**Value**|**Value**|**Unit**| |---|---|---|---|---|---| |VTM|ITM= 1.6 A, tp= 380 µs|Tj= 25 °C|Max.|1.7|V| |VTO|Threshold on-state voltage|Tj= 125 °C|Max.|1.06|V| |Rd|Dynamic resistance|Tj= 125 °C|Max.|540|mΩ| |IDRM/ IRRM|VT= VDRM, VT= VRRM, RGK= 1 kΩ|Tj= 25 °C|Max.|1|µA| |||Tj= 125 °C||150|µA| **DS13776** - **Rev 3** **page 2/10** **X0115ML Characteristics (curves)** ## **Table 4. Thermal resistance** |**Parameters**|**Value**<br>**Unit**| |---|---| |Junction to lead (DC)<br>Typ.|60<br>°C/W<br>400| |Junction to ambient (DC) for 5 cm2copper surface<br>Typ.|| ## **1.1 Characteristics (curves)** **Figure 1. Maximum average power dissipation versus average on-state current** **==> picture [223 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> P(W)<br>1.0<br>α = 180 °<br> DC<br>α = 120 °<br>0.8<br>α = 90 °<br>α = 60 °<br>0.6 α = 30 °<br>0.4<br>360 °<br>0.2<br>α I T(AV) (A)<br>0.0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>**----- End of picture text -----**<br> **==> picture [233 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 2. Average and DC on-state current versus lead<br>temperature<br>IT(AV)(A)<br>1.0<br>DC<br>0.8<br>0.6<br>α = 180 °<br>α = 120 °<br>0.4 α = 90 °<br>α = 60 °<br>α = 30 °<br>0.2<br>0.0 TL(°C)<br>0 25 50 75 100 125<br>**----- End of picture text -----**<br> **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4. Average and D.C. on-state current versus<br>Figure 3. On-state characteristics (maximum values)<br>ambient temperature<br>10.0 ITM(A) IT(AV)(A)<br>Tj max: 125 °C 0.3<br>Vt0 = 1.06 V<br>Rd = 540 mΩ<br> T = 125 °C DC<br>j<br>0.2<br>1.0 α = 180 °<br> T = 25 ° C<br>j<br>0.1<br>VTM(V) Ta(°C)<br>0.1 0.0<br>0.0 1.0 2.0 3.0 4.0 5.0 0 25 50 75 100 125<br>**----- End of picture text -----**<br> **DS13776** - **Rev 3** **page 3/10** **X0115ML Characteristics (curves)** **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. Relative variation of thermal impedance junction Figure 6. Surge peak on-state current versus number of<br>to case and junction to ambient versus pulse duration cycles<br>1.00 K = [Zth(j-a)/ Rth(j-a)] 8 ITSM(A)<br> Zth(j-c) 7 Non repetitive Tj = 25 ° C<br>tp=10ms<br>6<br>One cycle<br>Zth(j-a) 5<br>0.10 4<br>3 Repetitive T c = 41 °C<br>2<br>1<br>tP(s) Number of cycles<br>0.01 0<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000<br>**----- End of picture text -----**<br> **==> picture [513 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8. Relative variation of gate trigger current, holding<br>Figure 7. Non repetitive surge peak on-state current for a<br>sinusoidal pulse with width tp < 10 ms current and latching current versus junction temperature(typical values)<br>ITSM(A)<br>1000 1.6 IH, IL [ Tj ] / IGT IH, IL [ Tj = 25 °C]<br>dl/dt limitation Tj initial = 25 °C<br> A/µs 1.4 I GT<br>100<br>1.2<br>I<br>TSM I I<br>H and L<br>1.0<br>10<br>0.8<br>0.6<br>1<br>0.4<br>t (ms)<br>p 0.2<br>T (°C)<br>0 j<br>0.01 0.10 1.00 10.00 0.0<br>-40 -20 0 20 40 60 80 100 120<br>**----- End of picture text -----**<br> **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Relative variation of holding current versus Figure 10. Relative variation of static dV/dt immunity<br>gate-cathode resistance (typical values) versus junction temperature<br>4.0 IH[Rgk] / IH [Rgk=1k Ω ] 4 dV/dt [T j] / dV/dt [Tj = 125 °C]<br>3.5<br>3.0 3 VD = VR = 402 V<br>2.5<br>2.0 2<br>1.5<br>1.0 1<br>0.5<br>Tj(°C)<br>0.0 Rgk(kΩ) 0<br>1.E-01 1.E+00 1.E+01 25 50 75 100 125<br>**----- End of picture text -----**<br> **DS13776** - **Rev 3** **page 4/10** **X0115ML Characteristics (curves)** **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Relative variation of dV/dt immunity versus Figure 12. Relative variation of dV/dt immunity versus<br>gate-cathode resistance (typical values) gate-cathode capacitance (typical values)<br>100.0 dV/dt[Rgk] / dV/dt [Rgk=1k Ω ] 100 dV/dt[Cgk] / dV/dt [Rgk=1k Ω ]<br>VD = 402 V VD = 402 V<br>Rgk = 1 kΩ<br>10.0<br>10<br>1.0<br> Cgk(nf)<br> Rgk(kΩ)<br>0.1 1<br>1.0E-01 1.0E+00 1.0E+01 1 10<br>**----- End of picture text -----**<br> **Figure 13. Typical thermal resistance junction to ambient versus copper surface under anode (epoxy FR4, eCu = 35µm, SOT-23-3L** **==> picture [222 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> Rth(j-a)(°C/W)<br>500<br>Epoxy printed board FR4, copper thickness: 35 μm SOT23-3L<br>400<br>300<br>200<br>100<br>SCu(cm²)<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **DS13776** - **Rev 3** **page 5/10** **X0115ML Package information** ## **2 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ## **2.1 SOT23-3L package information** - Lead-free package - Halogen free molding resin - Epoxy meets UL94, V0 **Figure 14. SOT23-3L package outline** **DS13776** - **Rev 3** **page 6/10** **X0115ML** **SOT23-3L package information** **Table 5. SOT23-3L package mechanical data** |**Ref.**<br> <br>~~———~~|**Dimensions**<br> ~~ee~~<br>~~———~~|**Dimensions**<br> ~~ee~~<br>~~———~~|**Dimensions**<br> ~~ee~~<br>~~———~~|**Dimensions**<br> ~~ee~~<br>~~———~~|**Dimensions**<br> ~~ee~~<br>~~———~~|**Dimensions**<br> ~~ee~~<br>~~———~~| |---|---|---|---|---|---|---| ||**Millimeters**<br>~~[P~~<br>~~———~~|||**Inches**<br>~~[P~~<br>~~———~~||| ||**Min.**<br>~~———~~|**Typ.**<br>~~———~~|**Max.**<br>~~———~~|**Min.**<br>~~———~~|**Typ.**<br>~~———~~|**Max.**| |A<br>~~———~~|0.89<br>~~———~~|~~———~~|1.25<br>~~———~~|0.035<br>~~———~~|~~———~~|0.0493| |A1|0||0.15|0||0.006| |B|0.30||0.51|0.0118||0.0201| |C|0.085||0.20|0.0033||0.0079| |D|2.75||3.04|0.1082||0.1197| |E|1.20||1.75|0.0472||0.0689| |e|0.85|0.95|1.05|0.0334|0.0374|0.0414| |e1|1.70|1.90|2.10|0.0669|0.0748|0.0827| |H|2.10||3.00|0.0826||0.1182| |L|0.25||0.61|0.0098||0.0241| |L1||0.55|||0.0217|| |S|0.35||0.65|0.0137||0.0256| |a|0°||8°|0°||8°| **Figure 15. Footprint recommendations, dimensions in mm** **DS13776** - **Rev 3** **page 7/10** **X0115ML Ordering information** ## **3** ## **Ordering information** **Figure 16. Ordering information scheme** **==> picture [252 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> X01 15 M L<br>SCR series<br>X01 = Sensitive SCR up to 1 A<br>Gate sensitivity<br>15 = 150 µA<br>Voltage<br>M = 600 V<br>Package<br>L = SOT23-3L<br>**----- End of picture text -----**<br> **Table 6. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**| |---|---|---|---|---|---| |X0115ML|X1M|SOT23-3L|0.01 mg|3000|Tape and reel| **DS13776** - **Rev 3** **page 8/10** **X0115ML** ## **Revision history** **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |16-Jul-2021|1|First issue.| |10-Dec-2021|2|UpdatedTable 1andFigure 6.| |28-Jan-2022|3|UpdatedTable 2.| **DS13776** - **Rev 3** **page 9/10** **X0115ML** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved **DS13776** - **Rev 3** **page 10/10**
Updated at April 28, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 540,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →