# SCR Module, 1.2kV, 134A rms, Single SCR, Screw, Module, 16 Pins
**URL**: https://novapart.co/products/WTD120TBS12T/scr-module-12kv-134a-rms-single-screw-16-pins
**SKU**: WTD120TBS12T
**Manufacturer**: WEEN SEMICONDUCTORS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €8.1300
**Stock**: 25+
**Lead Time**: 204 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 16Pins |
| Product Range | - |
| Scr Module Type | Single SCR |
| Thyristor Mounting | Screw |
| On State Rms Current | 134A |
| Thyristor Case Style | Module |
| Average Forward Current | 120A |
| Gate Trigger Current Max | 100mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 130°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
| Peak Repetitive Off State Voltage | 1.2kV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4697787/)
**WTD120TBS12 SCR Module**
**==> picture [76 x 66] intentionally omitted <==**
## **Rev.01 - 15 November 2024**
## **Product data sheet**
## **1. General description**
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
##
##
- Planar passivated thyristor chips for voltage ruggedness and reliability
- Top-side cooling
- Compact design
- One screw mounting
- Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DBC) • Package is RoHS compliant
## **3. Applications**
- UPS
## **4. Quick reference data**
## **Table 1. Quick reference data**
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**----- Start of picture text -----**
Symbol Parameter Conditions Notes Values Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Conditions**|**Notes**|**Values**|**Unit**|
|---|---|---|---|---|---|
|||||||
|**Absolute maximum rating**||||||
|VDRM|repetitive peak forward
voltage|||1200|V|
|VRRM|repetitive peak reverse
voltage|||1200|V|
|IT(RMS)|RMS on-state current|half sine wave; Th≤ 95 °C||134|A|
|IF(AV)|average forward current|δ = 0.5; square-wave pulse||120|A|
|ITSM|non-repetitive peak on-
state current|half sine wave; Tj(init)= 25 °C; tp= 10 ms||2000|A|
|||half sine wave; Tj(init)= 125 °C; tp= 10 ms||1800|A|
|||half sine wave; Tj(init)= 25 °C; tp= 8.3 ms||2200|A|
|||half sine wave; Tj(init)= 125 °C; tp= 8.3 ms||1870|A|
|IFSM|non-repetitive peak on-
state current|half sine wave; Tj(init)= 25 °C; tp= 10 ms||2700|A|
|||half sine wave; Tj(init)= 125 °C; tp= 10 ms||2300|A|
|||half sine wave; Tj(init)= 25 °C; tp= 8.3 ms||2970|A|
|||half sine wave; Tj(init)= 125 °C; tp= 8.3 ms||2530|A|
**WeEn Semiconductors**
**WTD120TBS12 SCR Module**
|**Symbol**|**Parameter**|**Conditions**|**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static characteristics**||||||||
|IGT|gate trigger current|VD= 12 V; IT= 0.1 A; Tj= 25 °C||30|-|100|mA|
|VGT|gate trigger voltage|VD= 12 V; IT= 0.1 A; Tj= 25 °C||-|-|1.50|V|
|VT|on-state voltage|IT= 240 A; Tj= 25 °C||-|-|1.70|V|
|VF|forward voltage|IF= 120 A; Tj= 25 °C||-|1.10|1.30|V|
## **5. Pinning information**
**Table 2. Pinning information**
**==> picture [438 x 110] intentionally omitted <==**
**----- Start of picture text -----**
Simplified outline Graphic symbol
9 T1
10 2
>i \, 11 O Le O 3
Van At
ut a D1
» *
es 15 7
16 8
**----- End of picture text -----**
## **6. Ordering information**
## **Table 3. Ordering information**
|**Type number**|**Package**
**Name**|**Orderable part number **|**Packing**
**method**|**Small packing**
**quantity**|**Package**
**version**|**Package**
**issue date**|
|---|---|---|---|---|---|---|
|WTD120TBS12|WeEnTOP-B|WTD120TBS12T|EPE|30|WeEnTOP-BPBP-A|05-Nov-2024|
## **7. Marking**
## **Table 4. Marking codes**
|**Type number**|**Marking codes**|
|---|---|
|WTD120TBS12|WTD120TBS12|
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**WTD120TBS12 SCR Module**
## **8. Limiting values**
## **Table 5. Limiting values**
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
**==> picture [497 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Symbol Parameter Conditions Notes Values Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Conditions**|**Notes**|**Values**|**Unit**|
|---|---|---|---|---|---|
|||||||
|VDRM|repetitive peak forward voltage|||1200|V|
|VRRM|repetitive peak reverse voltage|||1200|V|
|IT(RMS)|RMS on-state current|half sine wave; Th≤ 95 °C||134|A|
|||half sine wave; Th≤ 99 °C||120|A|
|IT(AV)|average on-state current|half sine wave||96|A|
|IF(AV)|average forward current|δ = 0.5; square-wave pulse||120|A|
|ITSM|non-repetitive peak onstate
current|half sine wave; Tj(init)= 25 °C; tp= 10 ms||2000|A|
|||half sine wave; Tj(init)= 125 °C; tp= 10 ms||1800|A|
|||half sine wave; Tj(init)= 25 °C; tp= 8.3 ms||2200|A|
|||half sine wave; Tj(init)= 125 °C; tp= 8.3 ms||1870|A|
|IFSM|non-repetitive peak on-
state current|half sine wave; Tj(init)= 25 °C; tp= 10 ms||2700|A|
|||half sine wave; Tj(init)= 125 °C; tp= 10 ms||2300|A|
|||half sine wave; Tj(init)= 25 °C; tp= 8.3 ms||2970|A|
|||half sine wave; Tj(init)= 125 °C; tp= 8.3 ms||2530|A|
|I
2t|I
2t for fusing|tp= 10 ms; sine-wave pulse||20|kA²s|
|dIT/dt|rate of rise of on-state
current|IG= 200 mA; Tj= 125 °C||200|A/μs|
|IGM|peak gate current|||10|A|
|VRGM|peak reverse gate voltage|||5|V|
|PGM|peak gate power|||20|W|
|PG(AV)|average gate power|over any 20 ms period||0.5|W|
|Tvj|virtual junction temperature|thyristor||-40 to 130|°C|
|||diode||-40 to 150|°C|
|Top|operation temperature|thyristor||-40 to 130|°C|
|||diode||-40 to 150|°C|
|Tstg|storage temperature|||-40 to 125|°C|
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved
WTD120TBS12 **Product data sheet**
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**3 / 12**
**WeEn Semiconductors**
**WTD120TBS12 SCR Module**
**Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values**
f = 50 Hz; Th = 95 °C **Fig. 2. RMS on-state current as a function of surge duration; maximum values**
**==> picture [431 x 172] intentionally omitted <==**
**Fig. 3. Total power dissipation as a function of average on-state current; maximum values; per thyristor**
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**WTD120TBS12**
**SCR Module**
**==> picture [397 x 148] intentionally omitted <==**
**----- Start of picture text -----**
IT ITSM
tp t
Tj(init) = 25 °C max
**----- End of picture text -----**
tp ≤ 10 ms (1) dIT/dt limit
**Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values**
**==> picture [397 x 148] intentionally omitted <==**
**----- Start of picture text -----**
IF IFSM
tp t
Tj(init)= 25 °Cmax
**----- End of picture text -----**
**Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values**
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved
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**Product data sheet**
**WeEn Semiconductors**
**WTD120TBS12 SCR Module**
## **9. Thermal characteristics**
## **Table 6. Thermal characteristics**
|**Symbol**|**Parameter**|**Conditions**|**Notes**|**Min**|**Typ**
|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-h)|thermal resistance from
junction to heatsink|per thyristor||-|-
|0.44|K/W|
|||per module for thyristor||-|-
|0.22|K/W|
|||per diode||-|-
|0.40|K/W|
|||per module for diode||-|-
|0.20|K/W|
**==> picture [402 x 154] intentionally omitted <==**
**----- Start of picture text -----**
P δ = tp
T
tp t
T
**----- End of picture text -----**
**Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration; per thyristor**
**==> picture [402 x 154] intentionally omitted <==**
**----- Start of picture text -----**
P δ = tp
T
tp t
T
**----- End of picture text -----**
**Fig. 7. Transient thermal impedance from junction to heatsink as a function of pulse duration; per diode**
## **10. Package characteristics**
**Table 7. Isolation characteristics**
**==> picture [496 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Symbol Parameter Conditions Notes Min Typ Max Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Conditions**
|**Notes**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||||||
|Visol|isolation voltage|50/60 Hz; RMS; IISOL≤ 1 mA;
t = 1 second; AC||-|-|3600|V|
|||50/60 Hz; RMS; IISOL≤ 1 mA;
t = 1 minute; AC||-|-|2500|V|
WTD120TBS12
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved **6 / 12**
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**WTD120TBS12 SCR Module**
## **11. Characteristics**
**Table 8. Characteristics**
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**----- Start of picture text -----**
Thyristor
Symbol Parameter Conditions Notes Min Typ Max Unit
**----- End of picture text -----**
|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|**11. Characteristics**
**Table 8. Characteristics**|
|---|---|---|---|---|---|---|---|
|**Thyristor**||||||||
|**Symbol**|**Parameter**|**Conditions**|**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|||||||||
|**Static characteristics**||||||||
|IGT|gate trigger current|VD= 12 V; IT= 0.1 A; Tj= 25 °C||30|-|100|mA|
|VGT|gate trigger voltage|VD= 12 V; IT= 0.1 A; Tj= 25 °C||-|-|1.50|V|
|||VD= 2/3 VDRM; IT= 0.1 A; Tj= 125 °C||0.25|-|-|V|
|IGD|gate non-trigger current|Tj= 125 °C||-|-|8.5|mA|
|VGD|gate non-trigger voltage|Tj= 125 °C||-|-|0.2|V|
|IL|latching current|VD= 12 V; IT= 0.1 A; Tj= 25 °C||-|-|300|mA|
|IH|holding current|VD= 12 V; Tj= 25 °C||-|-|200|mA|
|VT|on-state voltage|IT= 240 A; Tj= 25 °C||-|-|1.70|V|
|VTO|threshold voltage|Tj= 125 °C||-|-|0.960|V|
|rT|slope resistance|Tj= 125 °C||-|-|3.0|mΩ|
|ID|of-state current|VD= 1200 V; Tj= 25 °C||-|-|100|μA|
|||VD= 1200 V; Tj= 125 °C||-|-|15|mA|
|IR|reverse current|VR= 1200 V; Tj= 25 °C||-|-|100|μA|
|||VR= 1200 V; Tj= 125 °C||-|-|15|mA|
|**Dynamic characteristics**||||||||
|dVD/dt|rate of rise of of-state
voltage|VDM= 804 V; Tj= 125 °C; (VDM= 67% of
VDRM); exponential waveform;
gate open circuit||1500|-|-|V/μs|
|tgt|gate-controlled turn-on
time|ITM= 40 A; VD= 800 V; IG= 100 mA;
(dIG/dt)M= 1 A/μs; Tj= 25 °C||-|2|-|μs|
|tq|commutated turn-of
time|ITM= 2 A; tp= 50 μs; dV/dt = 5 V/μs;
dI/dt = 30 A/μs; Tj= 25 °C||-|150|-|μs|
**==> picture [496 x 32] intentionally omitted <==**
**----- Start of picture text -----**
Diode
Symbol Parameter Conditions Notes Min Typ Max Unit
**----- End of picture text -----**
|**Diode**|**Diode**|**Diode**|**Diode**|**Diode**|**Diode**|**Diode**|**Diode**|
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|||||||||
|**Static characteristics**||||||||
|VF|forward voltage|IF= 120 A; Tj= 25 °C||-|1.10|1.30|V|
|||IF= 120 A; Tj= 125 °C||-|1.00|1.20|V|
|VO|threshold voltage|Tj= 125 °C||-|-|0.989|V|
|RS|slope resistance|Tj= 125 °C||-|-|1.8|mΩ|
|IR|reverse current|VR= 1200 V; Tj= 25 °C||-|-|100|μA|
|||VR= 1200 V; Tj= 125 °C||-|-|4|mA|
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved
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**WeEn Semiconductors**
**WTD120TBS12**
**SCR Module**
**==> picture [201 x 191] intentionally omitted <==**
VTO = 0.960 V; rT = 0.0030 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values **Fig. 8. Thyristor on-state current as a function of on-state voltage**
**==> picture [202 x 188] intentionally omitted <==**
**Fig. 9. Gate voltage as a function of gate current**
**==> picture [201 x 189] intentionally omitted <==**
VO = 0.989 V; RS = 0.0018 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values **Fig. 10. Diode forward current as a function of forward voltage**
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved **8 / 12**
WTD120TBS12
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**Product data sheet**
**WeEn Semiconductors**
**WTD120TBS12 SCR Module**
## **12. Package outline**
**==> picture [127 x 12] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions in mm
**----- End of picture text -----**
## Pinout
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**==> picture [145 x 101] intentionally omitted <==**
**----- Start of picture text -----**
9 T1
10 2
11 3
D1
15 7
16 8
**----- End of picture text -----**
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**----- Start of picture text -----**
Package Outline
**----- End of picture text -----**
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**==> picture [274 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Suggested hole diameter in the PCB for solder pins and mounting pins: 2mm
**----- End of picture text -----**
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**Product data sheet**
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**WTD120TBS12**
**SCR Module**
## **13. Legal information**
## **Data sheet status**
|**Document**
**status [1]**
**[2]**|**Product**
**status [3]**|**Definition**|
|---|---|---|
|Objective
[short] data
sheet|Development|This document contains data from
the objective specification for product
development.|
|Preliminary
[short] data
sheet|Qualification|This document contains data from the
preliminary specification.|
|Product
[short] data
sheet|Production|This document contains the product
specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com.
## **Definitions**
**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
## **Disclaimers**
**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors.
In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of WeEn Semiconductors.
**Right to make changes** — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use** — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect.
**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
**Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
**Non-automotive qualified products** — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications.
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved
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**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
## **Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
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**Product data sheet**
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**WTD120TBS12 SCR Module**
## **14. Contents**
**1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Marking ...........................................................................2 8. Limiting values ..............................................................3 9. Thermal characteristics ................................................6 10. Package characteristics..............................................6 11. Characteristics .............................................................7 12. Package outline ...........................................................9 13. Legal information ......................................................10 14. Contents .....................................................................12**
## **© WeEn Semiconductors Co., Ltd. 2024. All rights reserved**
For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com **Date of release: 15 November 2024**
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved **12 / 12**
WTD120TBS12 **Product data sheet**
All information provided in this document is subject to legal disclaimers. **15 November 2024**
## Links
- [View this product on Novapart](https://novapart.co/products/WTD120TBS12T/scr-module-12kv-134a-rms-single-screw-16-pins)
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- [Supplier page](https://es.farnell.com/ween-semiconductors/wtd120tbs12t/scr-module-120a-1-2kv-screw-module/dp/4697787)
---
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