# IGBT, 80 A, 2.2 V, 750 W, 1.2 kV, TO-247, 3 Pins
**URL**: https://novapart.co/products/WG40N120HFW1Q/igbt-80-a-22-v-750-w-12-kv-to-247-3-pins
**SKU**: WG40N120HFW1Q
**Manufacturer**: WEEN SEMICONDUCTORS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9100
**Stock**: 200+
**Lead Time**: 120 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 750W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4697770/)
**WG40N120HFW1 IGBT Rev.01 - 19 June 2024**
**Product data sheet**
## **1. General description**
WG40N120HFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO-247 package. This device is part of the High speed series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter.
## _**RoHS** alogen-Free_ h
## **2. Features and benefits**
- Maximum junction temperature 175 °C
- High switching speed
- Positive Temperature efficient for Easy Parallel Operating
- Very soft, fast recovery anti-parallel diode
- EMI Improved Design
## **3. Applications**
- Solar inverter
- UPS
- Welding converters
- PFC
- Mid to high switching frequency applications
## **4. Quick reference data**
## **Table 1. Quick reference data**
|**Symbol**|**Parameter**|**Parameter**|**Notes**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|
|VCE|Collector-emitter voltage, Tj≥ 25 °C|||1200|||V|
|IC|DC collector current, limited by Tj(max)
TC= 100 °C|||40|||A|
|**Symbol**|**Parameter**|**Conditions**|**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|**Static characteristics**||||||||
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V; IC= 40 A; Tj= 25 °C||-|2.2|2.8|V|
**WeEn Semiconductors**
**WG40N120HFW1**
**IGBT**
## **5. Pinning information**
**Table 2. Pinning information**
**==> picture [496 x 125] intentionally omitted <==**
**----- Start of picture text -----**
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
C
2 C collector
3 E emitter
G
mb C mounting base; connected to E
collector sym200
1 2 3
TO247
**----- End of picture text -----**
## **6. Ordering information**
**Table 3. Ordering information**
|**Type number**|**Package**
**Name**|**Orderable part number **|**Packing**
**method**
|**Small packing**
**quantity**|**Package**
**version**|**Package**
**issue date**|
|---|---|---|---|---|---|---|
|WG40N120HFW1|TO247|WG40N120HFW1Q|Tube|30|SOT429|25-Mar-2013|
## **7. Marking**
**Table 4. Marking codes**
**==> picture [496 x 42] intentionally omitted <==**
**----- Start of picture text -----**
Type number Marking codes
WG40N120HFW1 G40N120
HFW1
**----- End of picture text -----**
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**Product data sheet**
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## **8. Limiting values**
**Table 5. Limiting values**
**==> picture [496 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Symbol Parameter Notes Value Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Notes**|**Value**|**Unit**|
|---|---|---|---|---|
||||||
|VCE|Collector-emitter voltage, Tj≥ 25 °C||1200|V|
|IC|DC collector current, limited by Tj(max)
TC= 25 °C
TC= 100 °C||80
40|A|
|IC(puls)|Pulsed collector current, tplimited by Tj(max)||120|A|
|-|Turn of safe operating area
VCE≤ 1200 V, Tj≤ 175 °C, tp= 1 μs||120|A|
|IF|Diode forward current, limited by Tj(max)
TC= 25 °C
TC= 100 °C||80
40|A|
|IFpuls|Diode pulsed current, tplimited by Tj(max)||120|A|
|VGE|Gate-emitter voltage||±20|V|
|Ptot|Power dissipation TC= 25 °C
Power dissipation TC= 100 °C||750
375|W|
|tsc|Short circuit withstand time
VGE= 15.0 V, VCC≤ 600 V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0 s
Tj= 175°C||10|us|
|Tstg|Storage temperature||-55 to +150|°C|
|Tjmax|Operating junction temperature||175|°C|
|-|Peak soldering temperture||260|°C|
|M|Mounting Torque with washer||0.55|Nm|
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved
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## **9. Thermal characteristics**
## **Table 6. Thermal characteristics**
**==> picture [496 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Symbol Parameter Conditions Notes Min Typ Max Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Conditions**|**Notes**|**Min**|**Typ**
|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||||||
|Rth(j-c)|IGBT thermal resistance from
junction to case|||-|0.20
|-|K/W|
|Rth(j-c)|Diode thermal resistance from
junction to case|||-|0.72
|-|K/W|
|Rth(j-a)|thermal resistance from
junction to ambient|||-|40
|-|K/W|
**==> picture [390 x 154] intentionally omitted <==**
**----- Start of picture text -----**
P δ = tp
T
tp t
T
**----- End of picture text -----**
**Fig. 1. Transient thermal impedance from junction to case as a function of pulse duration; IGBT**
**==> picture [390 x 154] intentionally omitted <==**
**----- Start of picture text -----**
P δ = tp
T
tp t
T
**----- End of picture text -----**
**Fig. 2. Transient thermal impedance from junction to case as a function of pulse duration; Diode**
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**WG40N120HFW1 IGBT**
## **10. Characteristics**
## **Table 7. Characteristics**
**==> picture [496 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Symbol Parameter Conditions Notes Min Typ Max Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Conditions**|**Notes**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||||||
|**Static characteristics**||||||||
|BVCES|Collector-emitter breakdown
voltage|VGE= 0 V; IC= 1 mA||1200|-|-|V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V; IC= 40 A; Tj= 25 °C||-|2.2|2.8|V|
|||VGE= 15 V; IC= 40 A; Tj= 175 °C||-|3.0|-|V|
|VF|Diode forward voltage|VGE= 0 V; IF= 40 A; Tj= 25 °C||-|2.3|-|V|
|||VGE= 0 V; IF= 40 A; Tj= 175 °C||-|2.1|-|V|
|VGE(th)|Gate-emitter threhold voltage|IC= 0.5 mA; VCE= VGE||4.2|5.3|6.4|V|
|ICES|Zero gate voltage collector
current|VCE= 1200 V; VGE= 0 V; Tj= 25 °C||-|-|250|μA|
|||VCE=1200 V;VGE= 0 V; Tj= 175 °C||-|-|10|mA|
|gfs|Transconductance|VCE= 20 V; IC= 40 A||-|21|-|S|
|**Dynamic characteristics**||||||||
|Cies|Input capacitance|VCE= 30 V; VGE= 0 V; f = 1 MHz;
Tj= 25 °C||-|6672|-|pF|
|Coes|Output capacitance|||-|137|-|pF|
|Cres|Reverse transfer capacitance|||-|25|-|pF|
|QG|Gate charge|VCC= 960 V; IC= 40 A; VGE= 15 V;
Tj= 25 °C||-|200|-|nC|
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## **11. Switching Characteristics**
**Table 8. Switching Characteristics, Inductive Load**
**==> picture [496 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Symbol Parameter Conditions Notes Min Typ Max Unit
**----- End of picture text -----**
|**Symbol**|**Parameter**|**Conditions**|**Notes**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||||||
|**IGBT characteristics**||||||||
|td(on)|Turn-on delay time|Tj= 25 °C;
VCC= 600 V; IC= 40 A; VGE= 15V / 0V;
RG= 3.6 Ω||-|41|-|nS|
|tr|Rise time|||-|41|-|nS|
|td(of)|Turn-of delay time|||-|126|-|nS|
|tf|Fall time|||-|68|-|nS|
|Eon|Turn-on energy|||-|2.5|-|mJ|
|Eof|Turn-of energy|||-|1|-|mJ|
|Ets|Total switching energy|||-|3.5|-|mJ|
|td(on)|Turn-on delay time|Tj= 175 °C;
VCC= 600 V; IC= 40 A; VGE= 15V / 0V;
RG= 3.6 Ω||-|41|-|nS|
|tr|Rise time|||-|40|-|nS|
|td(of)|Turn-of delay time|||-|141|-|nS|
|tf|Fall time|||-|106|-|nS|
|Eon|Turn-on energy|||-|4|-|mJ|
|Eof|Turn-of energy|||-|1.5|-|mJ|
|Ets|Total switching energy|||-|5.5|-|mJ|
|**Diode characteristics**||||||||
|trr|Reverse recovery time|Tj= 25 °C;
VR= 600 V; IF= 40 A; dIF/dt = 500A/us||-|200|-|nS|
|Qr|Reverse recovery charge|||-|1660|-|nC|
|IRM|Reverse recovery peak
current|||-|16|-|A|
|trr|Reverse recovery time|Tj= 175 °C;
VR= 600 V; IF= 40 A; dIF/dt = 500A/us||-|453|-|nS|
|Qr|Reverse recovery charge|||-|5566|-|nC|
|IRM|Reverse recovery peak
current|||-|26|-|A|
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**IGBT**
**==> picture [33 x 174] intentionally omitted <==**
Tj ≤ 175 °C
**Fig. 3. Power dissipation as a function of case temperature**
**==> picture [195 x 188] intentionally omitted <==**
Tj = 25 °C **Fig. 5. Typical output characteristic**
VGE ≥ 15 V; Tj ≤ 175 °C
**Fig. 4. Collector current as a function of case temperature**
**==> picture [195 x 188] intentionally omitted <==**
Tj = 175 °C **Fig. 6. Typical output characteristic**
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**IGBT**
**==> picture [194 x 187] intentionally omitted <==**
VCE = 20 V **Fig. 7. Typical transfer characteristic**
**==> picture [191 x 125] intentionally omitted <==**
IC = 500 μA
**Fig. 9. Gate-emitter threshold voltage as a function of junction temperature**
**==> picture [193 x 126] intentionally omitted <==**
## VGE = 15 V
**Fig. 8. Typical collector-emitter saturation voltage as a function of junction temperature**
**==> picture [197 x 184] intentionally omitted <==**
IC = 40 A
**Fig. 10. Typical gate charge**
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**IGBT**
**==> picture [194 x 183] intentionally omitted <==**
VGE = 0 V; f = 1 MHz **Fig. 11. Typical capacitance as a function of collector-emitter voltage**
**==> picture [173 x 86] intentionally omitted <==**
**==> picture [48 x 10] intentionally omitted <==**
**----- Start of picture text -----**
(1) IF = 80 A
**----- End of picture text -----**
(2) IF = 40 A
(3) IF = 20 A
**Fig. 13. Typical diode forward voltage as a function of junction temperature**
**==> picture [189 x 182] intentionally omitted <==**
**Fig. 12. Typical diode forward current as a function of forward voltage**
**==> picture [191 x 117] intentionally omitted <==**
Rg = 3.6 Ω; VGE = 15V/0V; Tj = 175 °C; VCE = 600 V; inductive load **Fig. 14. Typical switching times as a function of collector current**
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**WG40N120HFW1**
**IGBT**
**==> picture [193 x 117] intentionally omitted <==**
IC = 40 A; VGE = 15V/0V; Tj = 175 °C; VCE = 600 V; inductive load
**Fig. 15. Typical switching times as a function of gate resistance**
**==> picture [200 x 188] intentionally omitted <==**
Rg = 3.6 Ω; VGE = 15V/0V; Tj = 175 °C; VCE = 600 V; inductive load **Fig. 17. Typical switching energy losses as a function of collector current**
**==> picture [174 x 65] intentionally omitted <==**
IC = 40 A; VGE = 15V/0V; Rg = 3.6 Ω; VCE = 600 V; inductive load
**Fig. 16. Typical switching times as a function of**
**junction temperature**
**==> picture [200 x 190] intentionally omitted <==**
IC = 40 A; VGE = 15V/0V; Tj = 175 °C; VCE = 600 V; inductive load **Fig. 18. Typical switching energy losses as a function of gate resistance**
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**WG40N120HFW1**
**IGBT**
IC = 40 A; VGE = 15V/0V; Rg = 3.6 Ω; VCE = 600 V; inductive load
**Fig. 20. Forward bias safe operating area**
**Fig. 19. Typical switching energy losses as a function of junction temperature**
## **Fig. 21. Test circuit for inductive load switching**
**Fig. 22. Definition of switching times and losses**
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**WG40N120HFW1 IGBT**
## **12. Package outline**
||Plastic single-ended through-hol|Plastic single-ended through-hol|Plastic single-ended through-hol|Plastic single-ended through-hol|Plastic single-ended through-hol|Plastic single-ended through-hol|e package; headsink mounted; 1 mounting hole; 3 l|e package; headsink mounted; 1 mounting hole; 3 l|e package; headsink mounted; 1 mounting hole; 3 l|e package; headsink mounted; 1 mounting hole; 3 l|e package; headsink mounted; 1 mounting hole; 3 l|e package; headsink mounted; 1 mounting hole; 3 l|eads TO-247
TO247
1
3
TO247
E
D1
D2
1
Ø
P2
2|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||q
P|||||E3
E2
b
b1
A
s
b2
|A1
Q
c|||1
3
TO247
E
D1
D2
1
Ø
P2
2|
|||||||||||||||
||||D|||||||||E||
||||||||||||||1|
|||||||||||||||
|||||||||||||||
||||L|L1||e||||||||
|||||||||||||||
|||||||||||||||
||||Dim||All Dime|nsions in|Milli|meter||||||
||||||Min|Typ||Max||||||
||||A||4.70|4.95||5.20||||||
||||A1||1.90|2.00||2.10||||||
||||b||1.00|1.20||1.40||||||
||||b1||1.80|2.00||2.20||||||
||||b2||2.80|3.00||3.20||||||
||||c||0.50|0.60||0.70||||||
||||D||20.30|20.45||20.60||||||
||||D1||17.28|17.48||17.68||||||
||||D2||0.80|1.00||1.20||||||
||||E||15.45|15.60||15.75||||||
||||E1||13.82|14.02||14.22||||||
||||E2||4.80|5.00||5.20||||||
||||E3||1.40|1.60||1.80||||||
||||e|||5.45 BS|C|||||||
||||L||20.40|20.65||20.90||||||
||||L1||4.25|4.50||4.75||||||
||||P2||3.40|3.50||3.60||||||
||||P||3.50|3.60||3.70||||||
||||Q||2.20|2.40||2.60||||||
||||q||5.78|5.98||6.18||||||
||||Ø||7.10|7.19||7.30||||||
|||||||||||||||
|||||||||||||||
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## **13. Legal information**
## **Data sheet status**
|**Document**
**status [1]**
**[2]**|**Product**
**status [3]**|**Definition**|
|---|---|---|
|Objective
[short] data
sheet|Development|This document contains data from
the objective specification for product
development.|
|Preliminary
[short] data
sheet|Qualification|This document contains data from the
preliminary specification.|
|Product
[short] data
sheet|Production|This document contains the product
specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com.
## **Definitions**
**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
## **Disclaimers**
**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors.
In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
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**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect.
**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications.
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**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
## **Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
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## **14. Contents**
**1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Marking ...........................................................................2 8. Limiting values ..............................................................3 9. Thermal characteristics ................................................4 10. Characteristics.............................................................5 11. Switching Characteristics ...........................................6 12. Package outline .........................................................12 13. Legal information ......................................................13 14. Contents .....................................................................15**
## **© WeEn Semiconductors Co., Ltd. 2024. All rights reserved**
For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com **Date of release: 19 June 2024**
> © WeEn Semiconductors Co., Ltd. 2024. All rights reserved **15 / 15**
WG40N120HFW1 **Product data sheet**
All information provided in this document is subject to legal disclaimers. **19 June 2024**
## Links
- [View this product on Novapart](https://novapart.co/products/WG40N120HFW1Q/igbt-80-a-22-v-750-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ween-semiconductors/wg40n120hfw1q/igbt-single-1-2kv-80a-to-247-3/dp/4697770)
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