# Bridge Rectifier, Three Phase, 1.6 kV, 90 A, PWS-D, 5 Pins, 1.35 V

![Product image](https://novapart.co/image/farnell:2782997/)

**URL**: https://novapart.co/products/VUO82-16NO7/bridge-rectifier-three-phase-16-kv-90-a-pws-d-5
**SKU**: VUO82-16NO7
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Bridge Rectifier Diodes
**Price**: €30.5000
**Stock**: 25+

## Description

No. of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):90A; Bridge Rectifier Case Style:PWS-D; Forward Voltage VF Max:1.35V; No. of Pins:5Pins;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (12-Jan-2017) |
| No. Of Pins | 5Pins |
| No. Of Phases | Three Phase |
| Product Range | VUO82 |
| Forward Voltage Max | 1.35V |
| Forward Surge Current | 750A |
| Average Forward Current | 90A |
| Bridge Rectifier Mounting | Panel Mount |
| Operating Temperature Max | 150°C |
| Bridge Rectifier Case Style | PWS-D |
| Repetitive Peak Reverse Voltage | 1.6kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2782997/)

## **VUO82-16NO7** 

## **Standard Rectifier Module** 

||**3~**||
|---|---|---|
||**Rectifier**||
|RRM<br>1600<br>V<br>=||V|
|I|90<br>DAV<br>=|A|
|I|FSM<br>750<br>=|A|



## 3~ Rectifier Bridge 

## **Part number** 

VUO82-16NO7 

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## **Features / Advantages:** 

- Package with DCB ceramic 

- Improved temperature and power cycling 

- Planar passivated chips 

- Very low forward voltage drop 

- Very low leakage current 

## **Applications:** 

- Diode for main rectification 

- For three phase bridge configurations 

- Supplies for DC power equipment 

- Input rectifiers for PWM inverter 

- Battery DC power supplies 

- Field supply for DC motors 

## PWS-D 

## **Package:** 

- Industry standard outline 

- RoHS compliant 

- Easy to mount with two screws 

- Base plate: Copper internally DCB isolated 

- Advanced power cycling 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130410a 

© 2013 IXYS all rights reserved 

**VUO82-16NO7** 

|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|
|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions||min.|typ.|max.|Unit|
|VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1700|V|
|VRRM<br>_max. repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1600|V|
|IR<br>_reverse current_|V    =          V<br>R<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>V    =          V<br>R<br>1600<br>150<br>1600|||100<br>1.5|mA<br>µA|
|V F<br>_forward voltage drop_|T    =   25°C<br>VJ<br>I  =          A<br>F<br>30<br>I  =          A<br>F<br>90|||1.08<br>1.35|V<br>V|
||T    =       °C<br>VJ<br>I  =          A<br>F<br>30<br>I  =          A<br>F<br>90<br>125|||0.99<br>1.33|V<br>V|
|I<br>DAV<br>_bridge output current_|T  =       °C<br>C<br>115<br>T    =       °C<br>VJ<br>150<br>d =<br>rectangular<br>⅓|||90|A|
|VF0<br>T    =       °C<br>VJ<br>150<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.78<br>6|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC||||0.9|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH|||0.4||K/W|
|Ptot<br>_total power dissipation_|T    =   25°C<br>C|||135|W|
|IFSM<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>T    =   45°C<br>VJ<br>V    = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||750<br>810|A<br>A|
||T    =       °C<br>VJ<br>150<br>V    = 0 V<br>R<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||640<br>690|A<br>A|
|I²t<br>_value for fusing_|T    =   45°C<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.82<br>2.73|kA²s<br>kA²s|
||T    =       °C<br>150<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.05<br>1.98|kA²s<br>kA²s|
|CJ<br>_junction capacitance_|V  =          V;<br>400<br>T    =   25°C<br>f = 1 MHz<br>R<br>VJ||27||pF|



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130410a 

© 2013 IXYS all rights reserved 

**VUO82-16NO7** ~~ee~~ 

|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|---|---|---|---|---|
|I RMS<br>_RMS current_<br>per terminal|~~7~~|~~7~~|150|A|
|Tstg<br>_storage temperature_|-40<br>~~7~~|~~7~~|125|°C|
|TVJ<br>_virtual junction temperature_|-40||150|°C|
|Weight||159||g|
|M D<br>_mounting torque_<br>M T<br>_terminal torque_|4.25<br>4.25<br>~~|~~|~~|~~|5.75<br>5.75|Nm<br>Nm|
|d Spp/App<br>_creepage distance on surface | striking distance through air_<br>d Spb/Apb<br>_terminal to backside_<br>_terminal to terminal_|9.5<br>26.0<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~||mm<br>mm|
|V<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I      ≤ 1 mA<br>ISOL<br>ISOL|2500<br>3000<br>~~|~~|~~|~~||V<br>V|



Circuit Made in Germany Diagram Product XXXX-XXXX[YYCW Lot#] Number ~~F~~ E Date Code 

Ordering Part Number Marking on Product Delivery Mode Quantity Code No. ~~ee~~ Standard VUO82-16NO7 VUO82-16NO7 Box 10 504848 ~~a~~ **Equivalent Circuits for Simulation** ~~e~~ _* on die level_ T    =VJ 150 °C I V0 ~~R~~ 0 Rectifier ~~Om~~ V 0 max _threshold voltage_ 0.78 V R0 max _slope resistance *_ 4.8 mΩ 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130410a 

© 2013 IXYS all rights reserved 

**VUO82-16NO7** 

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**----- Start of picture text -----**<br>
 Outlines PWS-D<br>**----- End of picture text -----**<br>


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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130410a 

© 2013 IXYS all rights reserved 

**VUO82-16NO7** 

## **Rectifier** 

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**----- Start of picture text -----**<br>
120 10000<br>50 Hz0.8 x V RRM VR = 0 V<br>600<br>100<br>80 TVJ = 45°C<br>500 I [2] t<br>[A]IF 60 IFSM TVJ = 45°C 1000 TVJ = 150°C<br>400 [A [2] s]<br>40 [A] TVJ = 150°C<br>20 T VJ =<br>125°C 300<br>150°C<br>TVJ = 25°C<br>0 100<br>0.4 0.8 1.2 1.6 0.001 0.010 0.100 1.000 1 10<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>40 120<br>DC = RthJA:<br>1 0.6 KW DC =<br>0.5 0.8 KW 100 1<br>0.4<br>30 0.33 1 KW 0.5<br>0.17 2 KW 80 0.4<br>Ptot 0.08 48 KWKW IF(AV)M 0.33<br>20 60 0.17<br>[A] 0.08<br>[W]<br>40<br>10<br>20<br>0 0<br>0 10 20 30 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>IdAVM [A] TA  [°C] TC [°C]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4 Power dissipation vs. direct output current & ambient temperature<br>**----- End of picture text -----**<br>


Fig. 5 Max. forward current vs. case temperature 

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**----- Start of picture text -----**<br>
1.0<br>0.8 Constants for ZthJC calculation:<br>ZthJC0.6 i Rth (K/W) ti (s)<br>[K/W] 1 0.05 0.001<br>2 0.14 0.030<br>0.4<br>3 0.18 0.070<br>4 0.28 0.150<br>0.2<br>5 0.25 0.950<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>**----- End of picture text -----**<br>


Fig. 6 Transient thermal impedance junction to case 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130410a 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/VUO82-16NO7/bridge-rectifier-three-phase-16-kv-90-a-pws-d-5)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/vuo82-16no7/bridge-rect-3-ph-1-6kv-90a-pws/dp/2782997)
---

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