# Thyristor Module, Series Connected, 160 A, 1600 V

![Product image](https://novapart.co/image/farnell:9104135/)

**URL**: https://novapart.co/products/VS-VSKT162/16PBF/thyristor-module-series-connected-160-a-1600-v
**SKU**: VS-VSKT162/16PBF
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €54.9800
**Stock**: 200+
**Lead Time**: 92 days (indicative)

## Description

SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage, Vdrm:1.6kV; Gate Trigger Current Max, Igt:150mA; Current It av:160A; On State RMS Current IT(rms):355A; Peak Non

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (08-Jul-2021) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Scr Module Type | Series Connected - SCRs |
| Thyristor Mounting | Panel |
| On State Rms Current | 355A |
| Thyristor Case Style | INT-A-PAK |
| Average Forward Current | 160A |
| Gate Trigger Current Max | 150mA |
| Gate Trigger Voltage Max | 2.5V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1.6kV |
| Peak Repetitive Off State Voltage | 1.6kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9104135/)

## **VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

www.vishay.com 

Vishay Semiconductors 

## **Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (INT-A-PAK Power Modules)** 

## **FEATURES** 

- High voltage 

- Electrically isolated by DBC ceramic (AI2O3) 

- 3500 VRMS isolating voltage 

- Industrial standard package 

- High surge capability 

- Glass passivated chips 

- Modules uses high voltage power thyristor/diodes in three basic configurations 

- Simple mounting 

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**----- Start of picture text -----**<br>
INT-A-PAK<br>**----- End of picture text -----**<br>


- UL approved file E78996 

• Designed and qualified for multiple level 

## **PRIMARY CHARACTERISTICS** 

|IT(AV)|135 A to 160 A|
|---|---|
|Type|Modules - thyristor, standard|
|Package|INT-A-PAK|



- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

- DC motor control and drives 

- Battery charges 

- Welders 

- Power converters 

- Lighting control 

• Heat and temperature control 

|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~|~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~|~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~|~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~|~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~|~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~|~~|
|---|---|---|---|---|---|
|**SYMBOL**<br>~~|~~<br>~~i~~|**CHARACTERISTICS**<br>~~|~~<br>~~i~~|**VSK.136..**<br>~~|~~<br>~~i~~|**VSK.142..**<br>~~|~~<br>~~i~~|**VSK.162..**<br>~~|~~<br>~~i~~|**UNITS**<br>~~|~~<br>~~i~~|
|IT(AV)<br>~~eG~~<br>~~**e**~~|85 °C<br>~~eG~~<br>~~**e**e~~|135<br>~~eG~~<br>~~e~~|140<br>~~eG~~|160<br>~~eG~~|A<br>~~eG~~|
|IT(RMS)<br>~~**e**~~|~~**e**e~~<br>~~s~~|300<br>~~e~~<br>~~es~~|310<br>~~ees~~|355|A|
|ITSM<br>~~**e**~~|50 Hz<br>~~**e**e~~<br>~~s~~|3200<br>~~e~~<br>~~es~~|4500<br>~~ees~~|4870||
||60 Hz<br>~~**e**e~~<br>~~s~~|3360<br>~~e~~<br>~~es~~|4712<br>~~ees~~|5100||
|I2t<br>~~**e**~~<br>~~A~~|50 Hz<br>~~**e**e~~<br>~~s~~|51.5<br>~~e~~<br>~~es ~~|102<br> ~~ees~~|119|kA2s<br>_|
||60 Hz|47|92.5|108||
|I2t<br>~~ee~~|~~ee~~|515.5<br>~~ee~~|1013<br>~~ee~~|1190<br>~~ee~~|kA2s<br>~~ee~~|
|VRRM<br>~~ee~~|Range<br>~~ee~~|400 to 1600<br>~~ee~~|400 to 1600<br>~~ee~~|400 to 1600<br>~~ee~~|V<br>~~ee~~|
|TJ<br>~~ee~~<br>~~a~~|Range<br>~~ee~~<br>~~a~~|-40 to +125<br>~~ee~~|||°C<br>~~ee~~|



## **ELECTRICAL SPECIFICATIONS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|---|
|**TYPE**<br>**NUMBER**|**VOLTAGE**<br>**CODE**|**VRRM/VDRM, MAXIMUM REPETITIVE**<br>**PEAK REVERSE VOLTAGE**<br>**V**|**VRSM/VDSM, MAXIMUM NON-REPETITIVE**<br>**PEAK REVERSE VOLTAGE**<br>**V**|**IRRM/IDRM**<br>**AT 125 °C**<br>**mA**|
|VS-VSK.136<br>VS-VSK.142<br>VS-VSK.162|04|400|500|50|
||08|800|900||
||12|1200|1300||
||14|1400|1500||
||16|1600|1700||



**1** 

Revision: 27-Jul-2018 

Document Number: 94513 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 48] intentionally omitted <==**

## **VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

www.vishay.com 

## Vishay Semiconductors 

|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**||||||||
|---|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VSK.136**|**VSK.142**|**VSK.162**|**UNITS**|
|Maximum average on-state current<br>at case temperature|IT(AV)|180° conduction, half sine wave|||135|140|160|A|
||||||85|85|85|°C|
|Maximum RMS on-state current|IT(RMS)|As AC switch|||300|310|355|A|
|Maximum peak, one-cycle<br>on-state, non-repetitive<br>surge current|ITSM|t = 10 ms|No voltage<br>reapplied|Sine half wave,<br>initial TJ=<br>TJmaximum|3200|4500|4870||
|||t = 8.3 ms|||3360|4712|5100||
|||t = 10 ms|100 % VRRM<br>reapplied||2700|3785|4100||
|||t = 8.3 ms|||2800|3963|4300||
|Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||51.5|102|119|kA2s|
|||t = 8.3 ms|||47|92.5|108||
|||t = 10 ms|100 % VRRM<br>reapplied||36.5|71.6|84||
|||t = 8.3 ms|||33.3|65.4|76.7||
|Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied|||515.5|1013|1190|kA2s|
|Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)), TJmaximum|||0.86|0.83|0.8|V|
|High level value of threshold voltage|VT(TO)2|(I >x IT(AV)), TJmaximum|||1.05|1|0.98||
|Low level value on-state<br>slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)), TJmaximum|||2.02|1.78|1.67|m|
|High level value on-state<br>slope resistance|rt2|(I >x IT(AV)), TJmaximum|||1.65|1.43|1.38||
|Maximum on-state voltage drop|VTM|ITM=x IT(AV), TJ= 25 °C, 180° conduction|||1.57|1.55|1.54|V|
|Maximum forward voltage drop|VFM|ITM=x IT(AV), TJ= 25 °C, 180° conduction|||1.57|1.55|1.54|V|
|Maximum holding current|IH|Anode supply = 6 V initial IT= 30 A, TJ= 25 °C|||200|||mA|
|Maximum latching current|IL|Anode supply = 6 V resistive load = 1<br>Gate pulse: 10 V, 100 μs, TJ= 25 °C|||400||||



|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|||
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Typical delay time|tgd|TJ= 25 °C|Gate current = 1 A, dlg/dt = 1 A/μs<br>Vd= 0.67 % VDRM|1|μs|
|Typical rise time|tgr|||2||
|Typical turn-off time|tq|ITM= 300 A, - dl/dt = 15 A/μs; TJ= TJmaximum<br>VR= 50 V; dV/dt = 20 V/μs;gate 0 V, 100||50 to 200||



|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum peak reverse and<br>off-state leakage current|IRRM,<br>IDRM|TJ= 125 °C|50|mA|
|RMS insulation voltage|VINS|50 Hz, circuit to base,<br>all terminals shorted, t = 1 s|3500|V|
|Critical rate of rise of<br>off-state voltage|dV/dt|TJ= TJmaximum,<br>exponential to 67 % rated VDRM|1000|V/μs|



Revision: 27-Jul-2018 

Document Number: 94513 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 48] intentionally omitted <==**

## **VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

www.vishay.com 

## Vishay Semiconductors 

|**TRIGGERING**|**TRIGGERING**|||||
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum peakgate power|PGM|tp 5 ms, TJ= TJmaximum||12|W|
|Maximum averagegate power|PG(AV)|f = 50 Hz, TJ= TJmaximum||3||
|Maximum peakgate current|IGM|tp 5 ms, TJ= TJmaximum||3|A|
|Maximum peak negative<br>gate voltage|- VGT|||10|V|
|Maximum required DC<br>gate voltage to trigger|VGT|TJ= - 40 °C|Anode supply = 6 V,<br>resistive load; Ra= 1|4||
|||TJ= 25 °C||2.5||
|||TJ= TJmaximum||1.7||
|Maximum required DC<br>gate current to trigger|IGT|TJ= - 40 °C||270|mA|
|||TJ= 25 °C||150||
|||TJ= TJmaximum||80||
|Maximum gate voltage<br>that will not trigger|VGD|TJ= TJmaximum, rated VDRMapplied||0.3|V|
|Maximum gate current<br>that will not trigger|IGD|||10|mA|
|Maximum rate of rise of<br>turned-on current|dI/dt|TJ= TJmaximum, ITM= 400 A rated VDRMapplied||<br>300|A/μs|



## **THERMAL AND MECHANICAL SPECIFICATIONS** 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VSK.136**|**VSK.142 **|**VSK.162**|**UNITS**|
|Maximum junction operating<br>temperature range||TJ||-40 to +125|||°C|
|Maximum storage<br>temperature range||TStg||-40 to +150||||
|Maximum thermal resistance,<br>junction to case per junction||RthJC|DC operation|0.18|0.18|0.16|K/W|
|Maximum thermal resistance,<br>case to heatsink per module||RthCS|Mounting surface, smooth, flat and greased|0.05||||
|Mounting<br>torque ± 10 %|IAP to heatsink||A mounting compound is recommended and<br>the torque should be rechecked after a period of<br>3 hours to allow for the spread of the<br>compound. Lubricated threads.|4 to 6|||Nm|
||busbar to IAP|||||||
|Approximate weight||||200|||g|
|||||7.1|||oz.|
|Case style||||INT-A-PAK||||



##  **R CONDUCTION PER JUNCTION** 

|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**DEVICES**|**SINUSOIDAL CONDUCTION**<br>**AT TJ MAXIMUM**|||||**RECTANGULAR CONDUCTION**<br>**AT TJ MAXIMUM**|||||**UNITS**|
||**180°**|**120°**|**90°**|**60°**|**30°**|**180°**|**120°**|**90°**|**60°**|**30°**||
|VSK.136|0.007|0.01|0.013|0.0155|0.017|0.009|0.012|0.014|0.015|0.017|K/W|
|VSK.142|0.0019|0.0019|0.0020|0.0020|0.0021|0.0018|0.0022|0.0023|0.0023|0.0020||
|VSK.162|0.0030|0.0031|0.0032|0.0033|0.0034|0.0029|0.0036|0.0039|0.0041|0.0040||



## **Note** 

- Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 

Revision: 27-Jul-2018 

Document Number: 94513 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

**==> picture [166 x 367] intentionally omitted <==**

**----- Start of picture text -----**<br>
130<br>VSK.136.. Series<br>RthJC (DC) = 0.18 K/W<br>120<br>110<br>Conduction Angle<br>100<br>90 30°<br>60°<br>90°<br>80<br>120°<br>180°<br>70<br>0         20        40        60      80         100       120     140<br>Average Forward Current (A)<br>Fig. 1 - Current Ratings Characteristics<br>130<br>VSK.136.. Series<br>RthJC (DC) = 0.18 K/W<br>120<br>110<br>Conduction Period<br>100<br>30°<br>90 60°<br>90°<br>80 120°<br>180°<br>DC<br>70<br>0              50            100           150           200           250<br>Average On-state Current (A)<br>Maximum Allowable Case Temperature (°C)<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
350<br>DC<br>300 180 RMS Lim it<br>120<br>250 90<br>60<br>200 30<br>150<br>100 Conduction Period<br>VSK.136.. Series<br>50 Per Junction<br>T   = 125°C<br>J<br>0<br>0 50 100 150 200 250<br>Average On-state Current (A)<br>M axim um  Average On-state Power Loss (W )<br>**----- End of picture text -----**<br>


Fig. 4 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
130 3000<br>VSK.136.. Series A t A ny Rated Load Condition And W ith<br>RthJC (DC) = 0.18 K/W 2800 Rated V         Applied Following Surge. RRM<br>120 Initial T  = 125°CJ<br>2600 at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>110 2400<br>Conduction Period 2200<br>100<br>30° 2000<br>90 60° 1800<br>90°<br>1600<br>80 120°<br>180° 1400 VSK.136.. Series<br>DC Per Junction<br>70 1200<br>0              50            100           150           200           250 1 1 0 10 0<br>Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N)<br>Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current<br>300 3500<br>180 Maximum Non Repetitive Surge Current<br>120 Versus Pulse Train Duration. Control<br>250   90 Of Conduction May Not Be Maintained.<br>  60 3000 Initial T  = 125°C J<br>  30 No Voltage Reapplied<br>200 Rated V        ReappliedRRM<br>2500<br>150<br>RMS Limit<br>2000<br>100 Conduction Angle<br>VSK.136.. Series 1500<br>50 Per Junction<br>VSK.136.. Series<br>TJ = 125°C<br>Per Junction<br>0 1000<br>0              30             60             90           120           150  0 .0 1 0.1 1<br>Average On-state Current (A) Pulse Train Duration (s)<br>Maximum Allowable Case Temperature (°C) Peak Half Sine W ave On -state Current (A)<br>Maximum Average On-state Power Loss (W)<br>Peak Half Sine W ave On-state C urrent (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

Fig. 3 - On-State Power Loss Characteristics 

Fig. 6 - Maximum Non-Repetitive Surge Current 

Revision: 27-Jul-2018 

Document Number: 94513 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

**==> picture [324 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
450<br>400<br>180<br>350 120<br>90<br>300 60<br>30<br>250 Conduction Angle<br>200<br>150<br>100 VSK.136.. Series<br>Per Module<br>50 T  = 125°CJ<br>0<br>0 50 100 150 200 250 3 0 0 25 50 75 100 125<br>Total RMS Output Current (A) Maximum Allowable Am bient Tem perature (°C)<br>1 K/ W<br>0.6<br>K/ W<br>0.4<br>K/ W<br>0.25<br>K/ W<br>0.16<br>K/ W<br>0.12<br>K/ W<br>0.08<br>K/ W<br>0.04<br>K/ W<br>t h SA<br>R<br>=<br>0.01<br>K/ W<br>-  Δ<br>R<br>M axim um  Total On-state Power Loss (W )<br>**----- End of picture text -----**<br>


Fig. 7 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
1000<br>900<br>800<br>700<br>180<br>600 (Sine)<br>180<br>500<br>(Rect)<br>400<br>300<br>2 x VSK.136.. Series<br>200 Single Phase Bridge<br>Connected<br>100<br>T    = 125°CJ<br>0<br>0 55 110 165 220 2750 25 50 75 100 125<br>Total Output Current (A) Maximum Allowable Am bient Temperature (°C)<br>0.6 K/ W<br>0.35<br>K/ W<br>0.2<br>K/ W<br>0.12<br>K/ W<br>0.08<br>K/ W<br>0.04<br>K/ W<br>t h<br>SA<br>R<br>=<br>0.01<br>K/ W<br>-<br>Δ<br> R<br>Maxim um  Total Power Loss (W)<br>**----- End of picture text -----**<br>


Fig. 8 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
1500<br>1200<br>900 120<br>(Rect)<br>600<br>3 x VSK.136.. Series<br>300 Three Phase Bridge<br>C onnected<br>T   = 125°CJ<br>0<br>0 100 200 300 4 0 0 25 50 75 100 125<br>Total O utput C urrent (A) M axim um  Allowable Am bient Tem perature (°C)<br>Fig. 9 - On-State Power Loss Characteristics<br>1 K/ W<br>0.4 K/ W<br>0.25<br>K/ W<br>0.16<br>K/ W<br>0.1<br>K/ W<br>0.08<br>K/ W<br>R<br>=<br>0.04<br>K/ W- Δ<br> R<br>M axim um  To tal Power Loss (W ) t h SA<br>**----- End of picture text -----**<br>


Revision: 27-Jul-2018 

Document Number: 94513 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

**==> picture [166 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
130<br>VSK.142.. Series<br>R        (DC) = 0.18 K/WthJC<br>120<br>110<br>Conduction Angle<br>100<br>90 30<br>60<br>90<br>80<br>120<br>180<br>70<br>0 30 60 90 120 150<br>Average Forward Current (A)<br>Maxim um  Allowable Case Tem perature (°C)<br>**----- End of picture text -----**<br>


Fig. 10 - Current Ratings Characteristics 

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**----- Start of picture text -----**<br>
130<br>VSK.142.. Series<br>R        (DC ) = 0.18 K/WthJC<br>120<br>110<br>Conductio n Period<br>100<br>30<br>60<br>90<br>90<br>120<br>80<br>180<br>DC<br>70<br>0 50 100 150 200 250<br>Average On-state Current (A)<br>Maxim um  Allowable Case Tem perature (°C)<br>**----- End of picture text -----**<br>


Fig. 11 - Current Ratings Characteristics 

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**----- Start of picture text -----**<br>
250<br>180<br>120<br>200 90<br>60<br>30<br>150<br>RMS Limit<br>100<br>Conduction Angle<br>50 VSK.142.. Series<br>Per Junction<br>T = 125°CJ<br>0<br>0 30 60 90 120 150<br>Average On-state Current (A)<br>M axim um  Average On-state Power Loss (W )<br>**----- End of picture text -----**<br>


Fig. 12 - On-State Power Loss Characteristics 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
350<br>DC<br>180<br>300<br>120<br>90<br>250 60<br>30<br>200<br>RMS Lim it<br>150<br>Co nduction Period<br>100<br>VSK.142.. Series<br>50 Per Junction<br>T   = 125°CJ<br>0<br>0 50 100 150 200 250<br>Average On-state Current (A)<br>M axim um  Average On-state Power Loss (W )<br>**----- End of picture text -----**<br>


Fig. 13 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
4500<br>A t A ny Rated Load Condition And W ith<br>4000 Rated V        Applied Following Surge.RRM Initial TJJ = 125 ° C<br>at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>3500<br>3000<br>2500<br>2000<br>VSK.142.. Series<br>Per Junction<br>1500<br>1 1 0 10 0<br>Number Of Equa l Amplitude Half Cycle Current Pulses (N)<br>Peak Half Sine W ave On -state C urrent (A)<br>**----- End of picture text -----**<br>


Fig. 14 - Maximum Non-Repetitive Surge Current 

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**----- Start of picture text -----**<br>
5000<br>Maximum Non Repetitive Surge Current<br>Versus Pulse Train Duration. Control<br>4500 O f Conduction May Not Be Maintained.<br>Initial TJJ = 125°C<br>4000 No Voltage Reapplied<br>Rated V      ReappliedRRM<br>3500<br>3000<br>2500<br>2000 VSK.142.. Series<br>Per Junction<br>1500<br>0 .0 1 0 .1 1<br>Pulse Train Duration (s)<br>Peak Half Sine W ave On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 15 - Maximum Non-Repetitive Surge Current 

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**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

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www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
400<br>180<br>120<br>300 90<br>60<br>30<br>200<br>C onductio n Angle<br>100 VSK.142.. Series<br>Per M odule<br>T   = 125°CJ<br>0<br>0 50 100 150 200 250 3 0 0 25 50 75 100 125<br>Total RM S Output Current (A) Maximum  Allowable Ambient Tem perature (°C)<br>1 K/ W<br>0.6<br>K/ W<br>0.4<br>K/ W<br>0.25<br>K/ W<br>0.160.12<br>K/ WK/ W<br>0.08<br>K/ W<br>t hSA<br>0.04<br>K/ W<br>R<br>= 0.01<br>K/ W<br>-<br>Δ<br> R<br>M axim um  Total On-state Pow er Loss (W )<br>**----- End of picture text -----**<br>


Fig. 16 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
1000<br>800<br>600 180<br>(Sine)<br>180<br>(Rect)<br>400<br>2 x VSK.142.. Series<br>200<br>Single Phase Bridge<br>C onnected<br>T   = 125°CJ<br>0<br>0 100 200 3 0 0 25 50 75 100 125<br>Total O utput C urrent (A) Maximum  Allowable Ambient Tem perature (°C)<br>0.6 K/ W<br>0.25<br>K/ W<br>0.16<br>K/ W<br>0.12<br>K/ W<br>0.08<br>K/ W<br>0.04<br>K/ W<br>t hSA<br>R<br>=<br>0.01<br>K/ W<br>-<br>Δ<br> R<br>M axim um  Total P ower Lo ss (W )<br>**----- End of picture text -----**<br>


Fig. 17 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
1600<br>1200<br>120<br>(Rect)<br>800<br>3 x VSK.142.. Series<br>400 Three Phase Bridge<br>Connected<br>T   = 125°CJ<br>0<br>0 50 100 150 200 250 300 350 400 4500 25 50 75 100 125<br>Total Output Current (A) Maximum  Allowable Am bient Tem perature (°C)<br>Fig. 18 - On-State Power Loss Characteristics<br>0.2 K/ W<br>0.16 K/ W<br>0.1<br>K/ W<br>0.08<br>K/ W<br>0.06<br>K/ W<br>0.04<br>K/ W<br>R<br>=<br>0.02<br>K/ W-<br>Δ<br> R<br>t hSA<br>Maxim um Total Power Loss (W)<br>**----- End of picture text -----**<br>


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Document Number: 94513 

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**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

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www.vishay.com 

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**----- Start of picture text -----**<br>
130<br>VSK.162.. Series<br>R         (DC) = 0.16 K/WthJC<br>120<br>110<br>Conduction Angle<br>100<br>90 30<br>60<br>80 90<br>120<br>180<br>70<br>0 30 60 90 120 150 180<br>Average Forw ard Current (A)<br>M axim um  Allow able Case Tem perature (°C)<br>**----- End of picture text -----**<br>


Fig. 19 - Current Ratings Characteristics 

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**----- Start of picture text -----**<br>
130<br>VSK.162.. Series<br>120 R         thJC (DC ) = 0.16 K/W<br>110<br>100 Conduction Period<br>30<br>90<br>60<br>80 90<br>120<br>70<br>180<br>DC<br>60<br>0 50 100 150 200 250 300<br>Average On-state Current (A)<br>Maxim um  Allowable Case Tem perature (°C)<br>**----- End of picture text -----**<br>


Fig. 20 - Current Ratings Characteristics 

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**----- Start of picture text -----**<br>
400<br>VSK.162.. Series<br>350 Per Junction<br>T  = 125°CJ<br>300<br>180<br>120<br>250<br>90<br>60<br>200<br>30<br>RMS Limit<br>150<br>100<br>50<br>Conduction Angle<br>0<br>0 20 40 60 80 100 120 140 160 180<br>Average On-state Current (A)<br>M axim um  Average On-state Power Loss (W )<br>**----- End of picture text -----**<br>


Fig. 21 - On-State Power Loss Characteristics 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
400<br>DC<br>350 180<br>120<br>300 90<br>60<br>250 30<br>200<br>RMS Limit<br>150<br>100 Conduction Period<br>VSK.162.. Series<br>50 Per Junction<br>T  = 125°C<br>J<br>0<br>0 30 60 90 120 150 180 210 240 270<br>Average On-state Current (A)<br>Fig. 22 - On-State Power Loss Characteristics<br>4500<br>At A ny Rated Load Condition And W ith<br>Rated V        Applied Following Surge.RRM<br>4000 Initial T  = 125 J ° C<br>at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>3500<br>3000<br>2500<br>2000<br>VSK.162.. Series<br>Per Junction<br>1500<br>1 1 0 10 0<br>Num ber O f Equa l Am plitud e Half Cycle Current Pulses (N)<br>Fig. 23 - Maximum Non-Repetitive Surge Current<br>5000<br>Maximum Non Repetitive Surge Current<br>Versus Pulse Train Duration. Control<br>4500 O f Conduction May Not Be Maintained.<br>Initial T  = 125°CJ<br>4000 No Voltage Reapplied<br>Rated V        ReappliedRRM<br>3500<br>3000<br>2500<br>2000 VSK.162.. Series<br>Per Junction<br>1500<br>0.0 1 0 .1 1<br>Pulse Train Duration (s)<br>M axim um  Average On-state Power Loss (W)<br>Peak Half Sine Wave On-state Current (A)<br>Peak Half Sine W ave On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 22 - On-State Power Loss Characteristics 

Fig. 23 - Maximum Non-Repetitive Surge Current 

Fig. 24 - Maximum Non-Repetitive Surge Current 

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Document Number: 94513 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

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www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
600<br>500 180<br>120<br>90<br>400 60<br>30<br>300<br>Conductio n Angle<br>200<br>VSK.162.. Series<br>100 Per Module<br>T   = 125°CJ<br>0<br>0 100 200 300 4 0 0 25 50 75 100 125<br>Total RM S Output Current (A) Maximum  Allowable Am bient Temperature (°C)<br>0.2<br>K/ W<br>0.16<br>K/ W<br>0.1<br>K/ W<br>0.08<br>K/ W<br>0.06<br>K/ W<br>0.04<br>K/ W<br>R<br>=<br>0.02<br>K/ W<br>-<br>Δ<br> R<br>thSA<br>M axim um  Total On-state Pow er Loss (W )<br>**----- End of picture text -----**<br>


Fig. 25 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
900<br>800<br>700<br>600 180<br>(Sine)<br>500 180<br>(Rect)<br>400<br>300<br>2 x VSK.162.. Series<br>200 Single Phase Bridge<br>Connected<br>100<br>T  = 125°C<br>J<br>0<br>0 50 100 150 200 250 3 0 0 25 50 75 100 125<br>Total Output Current (A) Maximum  Allowable Ambient Tem perature (°C)<br>Fig. 26 - On-State Power Loss Characteristics<br>1500<br>1250<br>1000<br>120<br>750 (Rect)<br>500<br>3 x VSK.162.. Series<br>Three Phase Bridge<br>250 Connected<br>T   = 125°CJ<br>0<br>0 50 100 150 200 250 300 350 400 4500 25 50 75 100 125<br>Total Output Current (A) M axim um  Allowable Am bient Tem perature (°C)<br>Fig. 27 - On-State Power Loss Characteristics<br>1 K/ W<br>0.6 K/ W<br>0.6 K/ W<br>0.3<br>K/ W<br>0.4<br>K/ W<br>0.2<br>K/ W<br>0.3<br>K/ W<br>0.2<br>K/ W<br>0.12<br>K/ W<br>0.08<br>K/ W<br>0.12<br>K/ W<br>0.08<br>K/ W<br>0.04<br>K/ W<br>t h SA<br>R<br>=<br>0.02<br>K/ W<br>- Δ<br> R<br>R<br>=<br>0.04<br>K/ W<br>-<br>Δ<br>R<br>Maximum Total Power Lo ss (W) t hSA<br>M aximum To tal Po wer Loss (W)<br>**----- End of picture text -----**<br>


Revision: 27-Jul-2018 

Document Number: 94513 

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**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

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www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
10000<br>1000<br>T  = 25J ˚ C<br>T  = 125 ˚ C<br>J<br>100<br>10<br>VSK.136.. Series<br>Per Junction<br>1<br>0 1 2 3 4 5<br>Instantaneous On-state Voltage (V)<br>Instantaneous On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 28 - On-State Voltage Drop Characteristics 

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**----- Start of picture text -----**<br>
1<br>Steady State Value<br>(DC Operation)<br>0.1<br>0.01<br>VSK.136.. Series<br>0.001<br>0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>thJC<br>Transient Thermal Impedance Z<br>**----- End of picture text -----**<br>


Fig. 31 - Thermal Impedance ZthJC Characteristics 

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**----- Start of picture text -----**<br>
10000 1<br>Steady State Value<br>(DC Operation)<br>1000 T  = 25˚C<br>J<br>T  = 125˚C<br>J<br>100 0.1<br>10<br>VSK.142.. Series<br>Per Junction VSK.142.. Series<br>1 0.01<br>0 1 2 3 4 5 0.01 0.1 1 10<br>Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s)<br>Fig. 29 - On-State Voltage Drop Characteristics Fig. 32 - Thermal Impedance ZthJCthJC Characteristics<br>10000 1<br>Steady State Value<br>(DC Operation)<br>1000<br>T  = 25J ˚ C<br>T  = 125˚C J<br>100 0.1<br>10<br>VSK.162.. Series<br>Per Junction VSK.162.. Series<br>1 0.01<br>0 1 2 3 4 5 0.01 0.1 1 10<br>Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s)<br>Instantaneous On-state Current (A) Transient Thermal Impedance Z thJC<br>Instantaneous On-state Current (A) Transient Thermal Impedance Z thJC<br>**----- End of picture text -----**<br>


Fig. 32 - Thermal Impedance ZthJCthJC Characteristics 

Fig. 30 - On-State Voltage Drop Characteristics 

Fig. 33 - Thermal Impedance ZthJC Characteristics 

Revision: 27-Jul-2018 

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**VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

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www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
100<br>Rectangular gate p ulse (1) PGM = 200 W , tp = 300 s<br>a)Recomm ended loa d line forrated dI/dt: 20 V, 20 W (2) PGM = 60 W , tp = 1 m s<br>tr = 0.5 s, tp >= 6 s  (3) PGM = 30 W , tp = 2 m s<br>b)Recomm ended loa d line for (4) PGM = 12 W , tp = 5 m s<br><= 30% ra ted  d I/dt: 15 V, 40 W<br>10 tr =  1 s, tp > =  6 s (a)<br>(b )<br>1<br>(4) (3) (2) (1)<br>VG D<br>IG D<br>VSK.136..142..162.. Series Frequency Lim ited by PG(AV )<br>0.1<br>0.001 0.01 0.1 1 10 100 1000<br>Instantaneous Gate Current (A)<br>Fig. 34 - Gate Characteristics<br>J T<br>TJ  J T<br>=<br> = -40 °C<br> = 25 °C<br> 125 C °<br>Instantaneous Gate Voltage (V)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION TABLE** 

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**----- Start of picture text -----**<br>
Device code VS-VS KT 162 16 PbF<br>1 2 3 4 5<br>1 - Vishay Semiconductors product<br>2 - Circuit configuration<br>3 - Current rating: IT(AV)<br>4 - Voltage code x 100 = VRRM<br>5 - PbF = Lead (Pb)-free<br>**----- End of picture text -----**<br>


## **Note** 

- To order the optional hardware go to www.vishay.com/doc?95172 

Revision: 27-Jul-2018 

Document Number: 94513 

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**==> picture [59 x 48] intentionally omitted <==**

## **VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series** 

www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
CIRCUIT CONFIGURATION<br>CIRCUIT<br>CIRCUIT DESCRIPTION CIRCUIT DRAWING<br>CONFIGURATION CODE<br>~<br>VSKT...<br>+<br>Two SCRs doubler circuit T +<br>-<br>-<br>K1 K2<br>G1 G2<br>~<br>VSKH...<br>+<br>SCR/diode doubler circuit, positive control H<br>+<br>-<br>-<br>K1<br>G1<br>~<br>VSKL...<br>+<br>SCR/diode doubler circuit, negative control L<br>+<br>-<br>-<br>K2<br>G2<br>LINKS TO RELATED DOCUMENTS<br>Dimensions www.vishay.com/doc?95067<br>**----- End of picture text -----**<br>


Revision: 27-Jul-2018 

Document Number: 94513 

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**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

## **INT-A-PAK IGBT/Thyristor** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
Ø 6.5 (0.25 DIA)<br>80 (3.15)<br>17 (0.67) 23 (0.91) 23 (0.91) 5 (0.20)<br>1 2 3<br>3 screws M6 x 10 66 (2.60) 37 (1.44)<br>94 (3.70)<br>7 (0.28)<br>30 (1.18) 9 (0.33) 28 (1.10) 29 (1.15)<br>7 6<br>35 (1.38) 14.5 (0.57)<br>2.8 x 0.8<br>(0.11 x 0.03)<br>5 4<br>**----- End of picture text -----**<br>


For technical questions, contact: indmodules@vishay.com 

www.vishay.com 1 

Document Number: 95067 Revision: 15-Feb-08 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-VSKT162/16PBF/thyristor-module-series-connected-160-a-1600-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-vskt162-16pbf/thyristor-module-160a-1600v/dp/9104135)
---

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