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VS-ST230S08P0VPBF
Thyristor Module, 230 A, 800 V
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Thyristors - SCR Modules
- SCR Module Type:Single SCR; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:150mA; Current It av:230A; On State RMS Current IT(rms):361A; Peak Non Rep Surge Curre
- SVHC: To Be Advised
- No. of Pins: -
- Product Range: -
- SCR Module Type: Single SCR
- Thyristor Mounting: Stud Mount
- On State RMS Current: 361A
- Thyristor Case Style: TO-209AB
- Average Forward Current: 230A
- Gate Trigger Current Max: 150mA
- Gate Trigger Voltage Max: 3V
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 800V
- Peak Repetitive Off State Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 12 |
| Price | 64.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**VS-ST230SPbF Series** www.vishay.com ## Vishay Semiconductors ## **Phase Control Thyristors (Stud Version), 230 A** ## **FEATURES** - Center amplifying gate - International standard case TO-209AB (TO-93) - Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200 V) **==> picture [69 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TO-209AB (TO-93)<br>**----- End of picture text -----**<br> - Compression bonded encapsulation for heavy duty operations such as severe thermal cycling - Designed and qualified for industrial level ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---| |IT(AV)|230 A| |VDRM/VRRM|400 V, 1600 V| |VTM|1.55 V| |IGT|150 mA| |TJ|-40 °C to 125 °C| |Package|TO-209AB (TO-93)| |Diode variation|Single SCR| - Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ## **TYPICAL APPLICATIONS** - DC motor controls - Controlled DC power supplies - AC controllers ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |IT(AV)||230|A| ||TC|85|°C| |IT(RMS)||360|A| |ITSM|50 Hz|5700|A| ||60 Hz|5970|| |I2t|50 Hz|163|kA2s| ||60 Hz|149|| |VDRM/VRRM||400 to 1600|V| |tq|Typical|100|μs| |TJ||-40 to 125|°C| ## **ELECTRICAL SPECIFICATIONS** ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---|---| |**TYPE NUMBER**|**VOLTAGE**<br>**CODE**|**VDRM/VRRM, MAXIMUM REPETITIVE**<br>**PEAK AND OFF-STATE VOLTAGE**<br>**V**|**VRSM, MAXIMUM**<br>**NON-REPETITIVE PEAK VOLTAGE**<br>**V**|**IDRM/IRRM MAXIMUM AT**<br>**TJ = TJ MAXIMUM**<br>**mA**| |VS-ST230S|04|400|500|30| ||08|800|900|| ||12|1200|1300|| ||16|1600|1700|| Revision: 11-Mar-14 Document Number: 94399 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ST230SPbF Series** www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## Vishay Semiconductors |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**| |Maximum average on-state current<br>at case temperature|IT(AV)|180° conduction, half sine wave|||230|A| ||||||85|°C| |Maximum RMS on-state current|IT(RMS)|DC at 78 °C case temperature|||360|A| |Maximum peak, one-cycle<br>non-repetitive surge current|ITSM|t = 10 ms|No voltage<br>reapplied|Sinusoidal half wave,<br>initial TJ= TJmaximum|5700|| |||t = 8.3 ms|||5970|| |||t = 10 ms|100 % VRRM<br>reapplied||4800|| |||t = 8.3 ms|||5000|| |Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||163|kA2s| |||t = 8.3 ms|||148|| |||t = 10 ms|100 % VRRM<br>reapplied||115|| |||t = 8.3 ms|||105|| |Maximum I2t for fusing|I2t|t = 0.1 to 10 ms, no voltage reapplied|||1630|kA2s| |Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.92|V| |High level value of threshold voltage|VT(TO)2|(I >x IT(AV)), TJ= TJmaximum|||0.98|| |Low level value of on-state slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.88|m| |High level value of on-state slope resistance|rt2|(I >x IT(AV)), TJ= TJmaximum|||0.81|| |Maximum on-state voltage|VTM|Ipk= 720 A, TJ= TJmaximum, tp = 10 ms sine pulse|||1.55|V| |Maximum holdingcurrent|IH|TJ= 25 °C, anode supply 12 V resistive load|||600|mA| |Maximum (typical) latchingcurrent|IL||||1000 (300)|| |**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum non-repetitive rate of rise<br>of turned-on current|dI/dt|Gate drive 20 V, 20, tr 1 μs<br>TJ= TJmaximum, anode voltage80 % VDRM|1000|A/μs| |Typical delay time|td|Gate current 1 A, dIg/dt = 1 A/μs<br>Vd= 0.67 % VDRM, TJ= 25 °C|1.0|μs| |Typical turn-off time|tq|ITM= 300 A, TJ= TJmaximum, dIF/dt = 20 A/μs,<br>VR= 50 V, dV/dt = 20 V/μs,gate 0 V 100, tp= 500 μs|100|| |**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum critical rate of rise<br>of off-state voltage|dV/dt|TJ= TJmaximum linear to 80 % rated VDRM|500|V/μs| |Maximum peak reverse and<br>off-state leakage current|IRRM,<br>IDRM|TJ= TJmaximum, rated VDRM/VRRMapplied|30|mA| Revision: 11-Mar-14 Document Number: 94399 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ST230SPbF Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors |**TRIGGERING**|**TRIGGERING**|||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**||**UNITS**| |||||**TYP.**|**MAX.**|| |Maximum peak gate power|PGM|TJ= TJmaximum, tp 5 ms||10.0||W| |Maximum average gate power|PG(AV)|TJ= TJmaximum, f = 50 Hz, d% = 50||2.0||| |Maximum peak positive gate current|IGM|TJ= TJmaximum, tp 5 ms||3.0||A| |Maximum peak positive gate voltage|+ VGM|TJ= TJmaximum, tp 5 ms||20||V| |Maximum peak negative gate voltage|- VGM|||5.0||| |DC gate current required to trigger|IGT|TJ= - 40 °C|Maximum required gate trigger/<br>current/voltage are the lowest<br>value which will trigger all units 12<br>V anode to cathode applied|180|-|| |||TJ= 25 °C||<br>90|150|mA| |||TJ= 125 °C||<br> <br>40|-|| |DC gate voltage required to trigger|VGT|TJ= - 40 °C||<br>2.9|-|V| |||TJ= 25 °C||1.8|3.0|| |||TJ= 125 °C||1.2|-|| |DC gate current not to trigger|IGD|TJ= TJmaximum|Maximum gate current/voltage not<br>to trigger is the maximum value<br>which will not trigger any unit with<br>rated VDRManode to cathode<br>applied|<br> <br> <br>10||mA| |DC gate voltage not to trigger|VGD|||<br> <br>0.25||V| |**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum operating junction<br>temperature range|TJ||-40 to 125|°C| |Maximum storage temperature range|TStg||-40 to 150|| |Maximum thermal resistance,<br>junction to case|RthJC|DC operation|0.10|K/W| |Maximum thermal resistance,<br>case to heatsink|RthC-hs|Mounting surface, smooth, flat and greased|0.04|| |Mounting torque, ± 10 %||Non-lubricated threads|31<br>(275)|N · m<br>(lbfin)| |||Lubricated threads|24.5<br>(210)|| |Approximate weight|||280|g| |Case style||See dimensions - link at the end of datasheet|TO-209AB (TO-93)|| ## **RthJC CONDUCTION** |**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**| |---|---|---|---|---| |**CONDUCTION ANGLE**|**SINUSOIDAL CONDUCTION**|**RECTANGULAR CONDUCTION**|**TEST CONDITIONS**|**UNITS**| |180°|0.016|0.012|TJ= TJmaximum|K/W| |120°|0.019|0.020||| |90°|0.025|0.027||| |60°|0.036|0.037||| |30°|0.060|0.060||| ## **Note** - The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Mar-14 Document Number: 94399 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ST230SPbF Series** **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com ## Vishay Semiconductors **==> picture [204 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>ST230S Series<br>RthJC (DC) = 0.1 K/W<br>120<br>110 Ø<br>Conduction Angle<br>100<br>90<br>90°<br>60° 120°<br>30° 180°<br>80<br>0 50 100 150 200 250<br>Maximum Allowable Case Temperature (°C) Average On-State Current (A)<br>**----- End of picture text -----**<br> Fig. 1 - Current Ratings Characteristics **==> picture [203 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>ST230S Series<br>RthJC (DC) = 0.1 K/W<br>120<br>110<br>Ø<br>Conduction Period<br>100<br>90<br>30°<br>60°<br>80 90°<br>120° DC<br>180°<br>70<br>0 100 200 300 400<br>Maximum Allowable Case Temperature (°C) Average On-State Current (A)<br>**----- End of picture text -----**<br> Fig. 2 - Current Ratings Characteristics **==> picture [372 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>180°<br>120°<br>300<br>90°<br>60°<br>250 30°<br>200 RMS Limit<br>150 Ø<br>Conduction Angle<br>100<br>ST230S Series<br>50 T = 125 J ° C<br>0<br>0 50 100 150 200 250 50 75 100 125<br>Average On-State Current (A) Maximum Allowable Ambient Temperature (°C)<br> Fig. 3 - On-State Power Loss Characteristics<br>450<br>DC<br>400 180°<br>120°<br>350 90°<br>60°<br>300<br>30°<br>250<br>200 RMS Limit Ø<br>Conduction Period<br>150<br>100<br>ST230S Series<br>50 T J = 125 °C<br>0<br>0 50 100 150 200 250 300 350 400 50 75 100 125<br>Average On-State Current (A) Maximum Allowable Ambient Temperature (°C)<br> Fig. 4 - On-State Power Loss Characteristics<br>1.2K/W<br>0.8 K/W<br>1.2 K/W<br>0.5 K/W<br>0.8 K/W<br>0.4 K/W<br>0.5 K/W<br>0.3 K/W<br>0.4 K/W<br>0.2 K/W<br>0.3K/W<br>0.2K/W<br>0.16K/W<br>0.1 K/W<br>thSA<br>0.16K/W<br>R<br>=0.08 K/W - Delta R<br>0.1K/W<br>R<br>= 0.8 K/W - Delta R<br>thSA<br>Maximum Average On-State Power Loss (W)<br>Maximum Average On-State Power Loss (W)<br>**----- End of picture text -----**<br> Revision: 11-Mar-14 Document Number: 94399 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ST230SPbF Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [207 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 5500<br>At Any Rated Load Condition And With<br>Rated VRRM Applied Following Surge.<br>5000 Initial T J = 125 °C<br>at 60 Hz 0.0083 s<br>4500 at 50 Hz 0.0100 s<br>4000<br>3500<br>3000<br>2500<br>ST230S Series<br>2000<br>1 10 100<br>Number Of Equal Amplitude<br>Half Cycle Current Pulses (N)<br> Fig. 5 - Maximum Non-Repetitive Surge Current<br>Peak Half Sine Wave On-State Current (A)<br>**----- End of picture text -----**<br> **==> picture [201 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 6000<br>Maximum Non Repetitive Surge Current<br>5500 vs. Pulse Drain Duration.<br>Control of Conduction May Not Be Maintained<br>5000 Initial T J = 125 °C<br>No Voltage Reapplied<br>4500 Rated VRRM Reapplied<br>4000<br>3500<br>3000<br>2500 ST230S Series<br>2000<br>0.01 0.1 1<br>Pulse Train Duration (s)<br>Peak Half Sine Wave On-State Current (A)<br>**----- End of picture text -----**<br> Fig. 6 - Maximum Non-Repetitive Surge Current **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10 000<br>1000<br>100 T J = 25 °C<br>T J = 125 ° C<br>ST230S Series<br>10<br>0.5 1.5 2.5 3.5 4.5<br>Instantaneous On-State Voltage (V)<br>Instantaneous On-State Current (A)<br>**----- End of picture text -----**<br> Fig. 7 - On-State Voltage Drop Characteristics **==> picture [358 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Steady State Value<br>R thJC = 0.1 K/W<br>(DC Operation)<br>0.1<br>0.01<br>ST230S Series<br>0.001<br>0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br> Fig. 8 - Thermal Impedance ZthJC Characteristics<br> (K/W)<br>thJC<br>Transient Thermal Impedance Z<br>**----- End of picture text -----**<br> Revision: 11-Mar-14 Document Number: 94399 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ST230SPbF Series** **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com ## Vishay Semiconductors **==> picture [359 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Rectangular gate pulse (1) PGM = 10 W, tp = 4 ms<br>a) Recommended load line for (2) PGM = 20 W, t p = 2 ms<br> rated dIb) Recommended load line for F /dt : 20 V, 10 Ω; t r <=1 μs (3) PGM = 40 W, t (4) PGM = 60 W, tpp = 1 ms = 0.66 ms<br>10 t < = 30 % rated dI r < = 1 μs F/dt : 10 V, 10 Ω (a)<br>(b)<br>1<br>(1) (2) (3) (4)<br>VGD<br>IGD<br>Device: ST230S Series Frequency Limited by PG (AV)<br>0.1<br>0.001 0.01 0.1 1 10 100<br>Instantaneous Gate Current (A)<br> Fig. 9 - Gate Characteristics<br>T<br>J<br>J T =-<br>J T C25 =° C40 °<br>=125 °C<br>Instantaneous Gate Voltage (V)<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION TABLE** **==> picture [376 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> Device code VS- ST 23 0 S 16 P 0 V PbF<br>1 2 3 4 5 6 7 8 9 10<br>1 - Vishay Semiconductors product<br>2 - Thyristor<br>3 - Essential part number<br>-<br>4 0 = Converter grade<br>-<br>5 S = Compression bonding stud<br>-<br>6 Voltage code x 100 = VRRM (see Voltage Ratings table)<br>7 - P = Stud base 3/4"-16UNF2A threads<br>8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)<br>1 = Fast-on terminals (gate and auxiliary cathode leads)<br>9 - V = Glass-metal seal (only up to 1200 V)<br>None = Ceramic housing (over 1200 V)<br>10 - None = Standard production<br>- PbF = Lead (Pb)-free<br>**----- End of picture text -----**<br> Note: For metric device M16 x 1.5 contact factory ## **LINKS TO RELATED DOCUMENTS** Dimensions www.vishay.com/doc?95082 Document Number: 94399 Revision: 11-Mar-14 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TO-209AB (TO-93)** ## **DIMENSIONS** in millimeters (inches) **==> picture [372 x 524] intentionally omitted <==** **----- Start of picture text -----**<br> Glass metal seal<br>19 (0.75) MAX. 4 (0.16) MAX.<br>8.5 (0.33) DIA.<br>4.3 (0.17) DIA.<br>Flexible leads<br>C.S. 25 mm [2]<br>(0.039 s.i.)<br>Red silicon rubber<br>C.S. 0.4 mm [2]<br>Red cathode (0.0006 s.i.)<br>White gate<br>Fast-on terminals<br>AMP. 280000-1<br>Red shrink REF-250<br>White shrink<br>28.5 (1.12) MAX. DIA.<br>27.5 (1.08) MAX. SW 32<br>3/4"-16UNF-2A [(1)]<br>35 (1.38) MAX.<br>Ceramic housing<br>19 (0.75) MAX. 4 (0.16) MAX.<br>8.5 (0.33) DIA.<br>4.3 (0.17) DIA.<br>Flexible leads<br>C.S. 25 mm [2]<br>(0.039 s.i.)<br>Red silicon rubber<br>C.S. 0.4 mm [2]<br>Red cathode (0.006 s.i.)<br>White gate<br> Red shrink<br>White shrink<br>27.5 (1.08) MAX. DIA.<br>27.5 (1.08) MAX. SW 32<br>3/4"-16UNF-2A [(1)]<br>35 (1.38) MAX.<br>9.5 (0.37) MIN.<br>9.5 (0.37) MIN.<br>22 (0.86) MIN.<br>22 (0.86) MIN.<br>.<br>210 (8.26) ± 10 (0.39)<br>220 (8.66) ± 10 (0.39)<br>.<br>90 (3.54) MIN<br>MAX<br>38.5 (1.52) 16 (0.63) MAX.<br>210 (8.26) ± 10 (0.39)<br>220 (8.66) ± 10 (0.39)<br>90 (3.54) MIN.<br>MAX.<br>38.5 (1.52) 16 (0.63) MAX.<br>**----- End of picture text -----**<br> ## **Note** > (1) For metric device: M16 x 1.5 - length 21 (0.83) maximum Revision: 05-Mar-12 Document Number: 95082 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 Document Number: 91000 **1**
Updated at June 7, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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