# Silicon Carbide Schottky Diode, Bridge, 650 V, 90 A, 164 nC, SOT-227 ![Product image](https://novapart.co/image/farnell:4414181/) **URL**: https://novapart.co/products/VS-SC90BA65/silicon-carbide-schottky-diode-bridge-650-v-90-a **SKU**: VS-SC90BA65 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes **Price**: €3.1500 **Stock**: 10+ **Lead Time**: 134 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | To Be Advised | | No. Of Pins | 4 Pin | | Product Range | - | | Qualification | - | | Diode Mounting | Panel | | Diode Case Style | SOT-227 | | Diode Configuration | Bridge | | Average Forward Current | 90A | | Total Capacitive Charge | 164nC | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 650V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4414181/) **VS-SC90BA65** www.vishay.com **==> picture [78 x 17] intentionally omitted <==** **----- Start of picture text -----**
VISHAY, —
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## Vishay Semiconductors ## **SOT-227 Silicon Carbide Single Phase Bridge, 90 A** ## **FEATURES** - Virtually no recovery tail and no switching losses - Majority carrier diode using Schottky technology on SiC wide band gap material - Improved VF and efficiency by thin wafer technology - High speed switching, low switching losses - Positive temperature coefficient, for easy paralleling **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**
SOT-227
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- Electrically isolated base plate - Large creepage distance between terminal ## **LINKS TO ADDITIONAL RESOURCES** - Simplified mechanical designs, rapid assembly - Designed and qualified for industrial level Application Notes - UL approved file E78996 - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IOat TC= 111 °C|90 A| |VRRM|650 V| |VFMat 90 A, TC= 25 °C|1.61 V| |Package|SOT-227| |Circuit configuration|Single phase bridge| ## **DESCRIPTION / APPLICATIONS** Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**| |IO|180° rect. conduction angle|90|A| ||TC|111|°C| |IFSM|50 Hz|340|A| ||60 Hz|356|| |I2t|50 Hz|578|A2s| ||60 Hz|528|| |VRRM||650|V| |TJ||-40 to +175|°C| ## **ELECTRICAL SPECIFICATIONS** ## **VOLTAGE RATINGS** ||**VRRM, MAXIMUM REPETITIVE**|**VRSM, MAXIMUM NON-REPETITIVE PEAK**| |---|---|---| |**TYPE NUMBER**|**PEAK REVERSE VOLTAGE**|**REVERSE VOLTAGE**| ||**V**|**V**| |VS-SC90BA65|650|650| Revision: 22-Apr-2024 Document Number: 97174 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC90BA65** www.vishay.com ## Vishay Semiconductors |**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS PER DIODE**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Cathode to anode breakdown voltage|VBR|IR= 300 μA|650|-|-|V| |Forward voltage|VFM|IF= 90 A||1.64|1.90|| |||IF= 90 A, TJ= 150 °C|-|2.04|-|| |Reverse leakage current|IRM|VR= 650 V|-|2.4|120|μA| |||TJ= 125 °C, VR= 650 V|-|8.3|-|| |||TJ= 150 °C, VR= 650 V|-|12.0|-|| |Junction capacitance|CT|VR= 650 V, f = 1 MHz|-|243|-|pF| |RMS isolation voltage base plate|VISOL|f = 50 Hz, any terminal to case, t = 1 min.|2500|-|-|V| ## **FORWARD CONDUCTION** |**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**| |Maximum DC output current
at case temperature|IO|Resistive or inductive load|||90|A| ||||||111|°C| |Maximum peak, one-cycle
non-repetitive forward current|IFSM|t = 10 ms|No voltage
reapplied|Initial TJ= 25 °C|340|A| |||t = 8.3 ms|||356|| |||t = 10 ms|100 % VRRM
reapplied||286|| |||t = 8.3 ms|||299|| |Maximum I2t for fusing|I2t|t = 10 ms|No voltage
reapplied||578|A2s| |||t = 8.3 ms|||528|| |||t = 10 ms|100 % VRRM
reapplied||409|| |||t = 8.3 ms|||373|| |Maximum I2√t for fusing|I2√t|I2t for time tx= I2√t x√tx;0.1≤tx ≤10 ms, VRRM= 0 V|||5.78|kA2√s| |Low level of threshold voltage, per leg|VF(T0)1|(16.7 % xπx IF(AV)) < I <πx IF(AV), TJ= TJmaximum|||0.90|V| |Low level value of forward slope resistance|rf1||||16.38|mΩ| |High level of threshold voltage, per leg|VF(T0)2|(I >πx IF(AV)), TJ= TJmaximum|||1.015|V| |High level value of forward slope resistance|rf2||||16.17|mΩ| |Maximum forward voltage, per diode|VFM|IF= 90 A|||1.90|V| |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Total capacitive charge|QC|VR= 400 V|-|164|-|nC| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Thermal resistance junction-to-case,
per diode|RthJC||-|-|0.6|°C/W| |Case-to-heatsink|RthCS|Flat,greased surface|-|0.1|-|| |Weight|||-|30|-|g| |Mounting torque||Torque to terminal|-|-|1.1 (9.7)|Nm (lbf.in)| |||Torque to heatsink|-|-|1.8 (15.9)|Nm (lbf.in)| |Case style|||SOT-227|||| Revision: 22-Apr-2024 Document Number: 97174 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC90BA65** ## www.vishay.com **==> picture [189 x 362] intentionally omitted <==** **----- Start of picture text -----**
90
TJ = 175 °C
80
a TJ = 150 °C s/o
70 | TJ = 125 °C Lf
60 TJ = 25 °C
|| bf |_|
50
40
30
eo A
20
ey
100 an/n
0 0.5 1.0 1.5 2.0 2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Axis Title
0.01
T J = 175 °C
bo TJ = 150 °C Ly
TJ = 125 °C
TJ = 25 °C
0.001 aaa
||SS ANTA
AZ
Vane eas
0.0001 ze
0 100 200 300 400 500 600 700
VR - Reverse Voltage (V)
- Instantaneous Forward Current (A)IF
- Reverse Current (µA)
IR
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage **==> picture [191 x 160] intentionally omitted <==** **----- Start of picture text -----**
10 000
PTT
CSL
1000
UU TT ATT
|
CCCI SS
100 PL LAIIN CHAI TI LEI
0.1 1 10 100 1000
VR - Reverse Voltage (V)
C - Junction Capacitance (pF)T
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Fig. 3 - Junction Capacitance vs. Reverse Voltage ## Vishay Semiconductors **==> picture [190 x 361] intentionally omitted <==** **----- Start of picture text -----**
240
210 TTT...
180 PPP
150 PEL LK
120
90
TJ = 25 °C
6030 S4nnA f = 1.0 MHz
0 Ae
0 100 200 300 400 500 600 700
Reverse Voltage (V)
Fig. 4 - Typical Capacitive Charge vs. Reverse Voltage
Axis Title
180
160
140 ISN
120 180° rect.
100 180 ° sine
FERNS TE
80 He
60 EAEoN ES
40
COC NS
20
PTET
0 PCE INN LET
0 20 40 60 80 100 120 140 160
IO - Total Output Current (A)
(nC)
Charge
Capacitive
Maximum Allowable Case Temperature (°C)
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Fig. 4 - Typical Capacitive Charge vs. Reverse Voltage Fig. 5 - Current Rating Characteristics **==> picture [190 x 176] intentionally omitted <==** **----- Start of picture text -----**
1200
1100
1000900 rT TLL TSS
800
700 SeeeeED 74
600 180° sine
500 aose e n
400 180° rect.
300 rT TL LH |
200
100 o> 422sS6
0 eG EE
0 15 30 45 60 75 90 105 120 135 150
IO - Total Output Current (A)
Fig. 6 - Total Power Loss Characteristics
Maximum Total Power Loss (W)
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Revision: 22-Apr-2024 Document Number: 97174 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC90BA65** www.vishay.com ## Vishay Semiconductors **==> picture [209 x 159] intentionally omitted <==** **----- Start of picture text -----**
330 10000
300 Initial TRated VJ RRM= 25 °Creapplied
270
240
at 60 Hz 0.0083 s 1000
210 at 50 Hz 0.01 s
180
150
100
120
90
60
30 10
1 10 100
Number of Equal Amplitude Half Cycle Current Pulses (N)
(A)
IFSM
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Fig. 7 - Non-Repetitive Peak Forward Surge Current vs. Number Pulses **==> picture [186 x 161] intentionally omitted <==** **----- Start of picture text -----**
360
330 Initial TJ = 25 °C
300
270
240 VR = 0
210 V R = V RRM
180
150
120
90
60
30
0.01 0.1 1
tp (s)
(A)
IFSM
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Fig. 8 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration **==> picture [462 x 160] intentionally omitted <==** **----- Start of picture text -----**
1
0.1
0.50
0.20
0.10
0.01 0.05
0.02
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
- Thermal Impedance
thJC Junction to Case (°C/W)
Z
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Fig. 9 - Maximum Thermal Impedance Characteristics Revision: 22-Apr-2024 Document Number: 97174 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC90BA65** Vishay Semiconductors www.vishay.com ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**S**
**C**
**90**
**B**|**S**
**C**
**90**
**B**|**S**
**C**
**90**
**B**|**A**|**65**|| |---|---|---|---|---|---|---|---|---|---| ||1|||5
3
2
4|||6|7|| ||**1**||-||Vishay Semiconductors product||||| ||**2**||-||Silicon Carbide diode||||| ||**3**||-||Present silicon generation||||| ||**4**||-||Current rating (90 = 90|A)|||| ||**5**||-||Circuit configuration (single phase|||bridge)|| ||**6**||-||Package indicator (SOT-227 standard insulated base)||||| ||**7**||-||Voltage rating (65 = 650 V)||||| Quantity per tube is 10, M4 screw and washer included |**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |**CIRCUIT**|**CIRCUIT CONFIGURATION CODE**||**CIRCUIT DRAWING**||||||||| |Single phase bridge|B|(AC) 4
(+) 1|||||1
4
Lead Assignment
2 (AC)
3 (-)||||3
2| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| |**LINKS TO RELATED DOCUMENTS**|||||||||||| |Dimensions|||||www.vishay.com/doc?95423||||||| |Part marking information|||||www.vishay.com/doc?95425||||||| Revision: 22-Apr-2024 Document Number: 97174 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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