# Silicon Carbide Schottky Diode, Bridge, 650 V, 50 A, 110 nC, SOT-227 ![Product image](https://novapart.co/image/farnell:4414180/) **URL**: https://novapart.co/products/VS-SC50BA65/silicon-carbide-schottky-diode-bridge-650-v-50-a **SKU**: VS-SC50BA65 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes **Price**: €2.4200 **Stock**: 10+ **Lead Time**: 134 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | To Be Advised | | No. Of Pins | 4 Pin | | Product Range | - | | Qualification | - | | Diode Mounting | Panel | | Diode Case Style | SOT-227 | | Diode Configuration | Bridge | | Average Forward Current | 50A | | Total Capacitive Charge | 110nC | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 650V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4414180/) **VS-SC50BA65** **==> picture [78 x 17] intentionally omitted <==** **----- Start of picture text -----**
VISHAY, —
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www.vishay.com
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## Vishay Semiconductors ## **SOT-227 Silicon Carbide Single Phase Bridge, 50 A** ## **FEATURES** - Virtually no recovery tail and no switching losses - Majority carrier diode using Schottky technology on SiC wide band gap material - Improved VF and efficiency by thin wafer technology - High speed switching, low switching losses - Positive temperature coefficient, for easy paralleling **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**
SOT-227
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- Electrically isolated base plate - Large creepage distance between terminal ## **LINKS TO ADDITIONAL RESOURCES** - Simplified mechanical designs, rapid assembly - Designed and qualified for industrial level Application Notes - UL approved file E78996 - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IOat TC= 124 °C|50 A| |VRRM|650 V| |VFMat 50 A, TC= 25 °C|1.5 V| |Package|SOT-227| |Circuit configuration|Single phase bridge| ## **DESCRIPTION / APPLICATIONS** Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**| |IO|180° rect. conduction angle|50|A| ||TC|124|°C| |IFSM|50 Hz|267|A| ||60 Hz|280|| |I2t|50 Hz|358|A2s| ||60 Hz|327|| |VRRM||650|V| |TJ||-40 to +175|°C| ## **ELECTRICAL SPECIFICATIONS** ## **VOLTAGE RATINGS** ||**VRRM, MAXIMUM REPETITIVE**|**VRSM, MAXIMUM NON-REPETITIVE PEAK**| |---|---|---| |**TYPE NUMBER**|**PEAK REVERSE VOLTAGE**|**REVERSE VOLTAGE**| ||**V**|**V**| |VS-SC50BA65|650|650| Revision: 22-Apr-2024 Document Number: 97173 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC50BA65** Vishay Semiconductors www.vishay.com ## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) |**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Cathode to anode breakdown voltage|VBR|IR= 200 μA|650|-|-|V| |Forward voltage|VFM|IF= 50 A||1.5|1.73|| |||IF= 50 A, TJ= 150 °C|-|1.88|-|| |Reverse leakage current|IRM|VR= 650 V|-|1.9|80|μA| |||TJ= 125 °C, VR= 650 V|-|6.0|-|| |||TJ= 150 °C, VR= 650 V|-|9.0|-|| |Junction capacitance|CT|VR= 650 V, f = 1 MHz|-|161|-|pF| |RMS isolation voltage base plate|VISOL|f = 50 Hz, any terminal to case, t = 1 min.|2500|-|-|V| ## **FORWARD CONDUCTION** |**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**| |Maximum DC output current
at case temperature|IO|Resistive or inductive load|||50|A| ||||||124|°C| |Maximum peak, one-cycle
non-repetitive forward current|IFSM|t = 10 ms|No voltage
reapplied|Initial TJ= 25 °C|267|A| |||t = 8.3 ms|||280|| |||t = 10 ms|100 % VRRM
reapplied||225|| |||t = 8.3 ms|||235|| |Maximum I2t for fusing|I2t|t = 10 ms|No voltage
reapplied||358|A2s| |||t = 8.3 ms|||327|| |||t = 10 ms|100 % VRRM
reapplied||253|| |||t = 8.3 ms|||231|| |Maximum I2√t for fusing|I2√t|I2t for time tx= I2√t x√tx;0.1≤tx ≤10 ms, VRRM= 0 V|||3.58|kA2√s| |Low level of threshold voltage, per leg|VF(T0)1|(16.7 % xπx IF(AV)) < I <πx IF(AV), TJ= TJmaximum|||0.87|V| |Low level value of forward slope resistance|rf1||||25.47|mΩ| |High level of threshold voltage, per leg|VF(T0)2|(I >πx IF(AV)), TJ= TJmaximum|||0.98|V| |High level value of forward slope resistance|rf2||||25.19|mΩ| |Maximum forward voltage, per diode|VFM|IF= 50 A|||1.73|V| ## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Total capacitive charge|QC|VR= 400 V|-|110|-|nC| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Thermal resistance junction-to-case,
per diode|RthJC||-|-|0.94|°C/W| |Case-to-heatsink|RthCS|Flat, greased surface|-|0.1|-|| |Weight|||-|30|-|g| |Mounting torque||Torque to terminal|-|-|1.1 (9.7)|Nm (lbf.in)| |||Torque to heatsink|-|-|1.8 (15.9)|Nm (lbf.in)| |Case style|||SOT-227|||| Revision: 22-Apr-2024 Document Number: 97173 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC50BA65** Vishay Semiconductors **==> picture [506 x 426] intentionally omitted <==** **----- Start of picture text -----**
www.vishay.com Vishay Semiconductors
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Axis Title Axis Title
80 10000 160 10000
70 P| TJ = 175 °C | ULL LT 140 P| | | | |
TJ = 150 °C
60 | TJ = 125 °C 7A 120 P| | | |YAYA
50 | T J = 25 ° C rYf |_| 1000 100 P| | |efef 1000
40 80
| [fi | | et ft
30 | | | fF | | 60 P| [[wil]]
100 100
20 | | [Ff | 40 LY Tf = 1.0 MHzJ = 25 °Cf = 1.0 MHzJ = 25 °CJ = 25 °C = 25 °C | i
10 20
| | |
0 | | [A|| [| | [ | | 10 0 fyABRs|ABRs|| | | [cw{oe{oe 10
0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700
VF - Forward Voltage Drop (V) Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 4 - Typical Capacitive Charge vs. Reverse Voltage
Axis Title Axis Title
0.01 10000 180 10000
160
| TJ = 175 ° C 140
T J = 150 °C
rT T J = 125 °C _ fy} 1000 120 IN 180° rect. 1000
TJ = 25 °C ZH 100 See 180° sine NGaaEe
0.001 | || LH | | 80 } iN\\ L
ot oH TS 100 60 WN 100
eee 40 PELL
20
Cee PEELE
0.0001 | Zeer 10 0 FLEEOeOe 10
0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage (V) IOO - Total Output Current (A)
(nC)
line line
Charge
2nd line 1st line 2nd line 2nd 1st line 2nd
Capacitive
- Instantaneous Forward Current (A)IF
2nd line 1st line 2nd line 2nd line 1st line 2nd line
- Reverse Current (µA)
IR
Maximum Allowable Case Temperature (°C)
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160
140 P| | | | |
120
P| | | |YAYA
100 P| | |efef
80
| et ft
60 P| [[wil]]
40 LY Tf = 1.0 MHzJ = 25 °Cf = 1.0 MHzJ = 25 °CJ = 25 °C = 25 °C | i
20
| |
0 fyABRs|ABRs|| | | [cw{oe{oe
0 100 200 300 400 500 600 700
Reverse Voltage (V)
Fig. 4 - Typical Capacitive Charge vs. Reverse Voltage
Axis Title
180
160
140
120 IN 180° rect.
100 See 180° sine NGaaEe
80 } iN\\ L
60 WN
40 PELL
20
PEELE
0 FLEEOeOe
0 10 20 30 40 50 60 70 80 90 100
IOO - Total Output Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Axis Title
900
800
700
600
500 PEPE 180° sine AZ
400
180° rect.
300 K/
200 EEE AE
100 TT
0 CTLAS COLE
0 10 20 30 40 50 60 70 80 90 100
IO - Total Output Current (A)
(nC)
Charge
Capacitive
Maximum Allowable Case Temperature (°C)
Maximum Total Power Loss (W)
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Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage **==> picture [191 x 160] intentionally omitted <==** **----- Start of picture text -----**
10 000
a ae a
SE
1000
eee Ce SS
pone ek NE
CN FCI FEMS
100 LLIN LE CEI ta
0.1 1 10 100 1000
VR - Reverse Voltage (V)
C - Junction Capacitance (pF)T
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Fig. 6 - Forward Power Loss Characteristics
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Fig. 3 - Junction Capacitance vs. Reverse Voltage Revision: 22-Apr-2024 Document Number: 97173 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC50BA65** www.vishay.com ## Vishay Semiconductors **==> picture [209 x 159] intentionally omitted <==** **----- Start of picture text -----**
270 10000
240 Initial T Rated VJ = 25 RRM reapplied° C
210
at 60 Hz 0.0083 s 1000
180
at 50 Hz 0.01 s
150
120
100
90
60
30 10
1 10 100
Number of Equal Amplitude Half Cycle Current Pulses (N)
(A)
IFSM
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Fig. 7 - Non-Repetitive Peak Forward Surge Current vs. Number Pulses **==> picture [186 x 161] intentionally omitted <==** **----- Start of picture text -----**
300
Initial TJ = 25 °C
270
240
210 V R = 0
180 V R = V RRM
150
120
90
60
30
0.01 0.1 1
tp (s)
(A)
IFSM
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Fig. 8 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration **==> picture [462 x 160] intentionally omitted <==** **----- Start of picture text -----**
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
- Thermal Impedance
thJC Junction to Case (°C/W)
Z
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Fig. 9 - Maximum Thermal Impedance Characteristics Revision: 22-Apr-2024 Document Number: 97173 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-SC50BA65** Vishay Semiconductors www.vishay.com ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**S**
**C**
**50**
**B**|**S**
**C**
**50**
**B**|**S**
**C**
**50**
**B**|**A**|**65**|| |---|---|---|---|---|---|---|---|---|---| ||1|||5
3
2
4|||6|7|| ||**1**||-||Vishay Semiconductors product||||| ||**2**||-||Silicon Carbide diode||||| ||**3**||-||Present silicon generation||||| ||**4**||-||Current rating (50 = 50|A)|||| ||**5**||-||Circuit configuration (single phase|||bridge)|| ||**6**||-||Package indicator (SOT-227 standard insulated base)||||| ||**7**||-||Voltage rating (65 = 650 V)||||| Quantity per tube is 10, M4 screw and washer included |**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |**CIRCUIT**|**CIRCUIT CONFIGURATION CODE**||**CIRCUIT DRAWING**||||||||| |Single phase bridge|B|(AC) 4
(+) 1|||||1
4
Lead Assignment
2 (AC)
3 (-)||||3
2| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| |**LINKS TO RELATED DOCUMENTS**|||||||||||| |Dimensions|||||www.vishay.com/doc?95423||||||| |Part marking information|||||www.vishay.com/doc?95425||||||| Revision: 22-Apr-2024 Document Number: 97173 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 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