# Thyristor Bridge Rectifier Module, Single Phase, 40 A, 1200 V

![Product image](https://novapart.co/image/farnell:9104852/)

**URL**: https://novapart.co/products/VS-P405W/thyristor-bridge-rectifier-module-single-phase-40
**SKU**: VS-P405W
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €25.6800
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Description

SCR Module Type:Bridge Rectifier, Single Phase - SCR / Diode; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:60mA; Current It av:40A; On State RMS Current IT(rms

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (08-Jul-2021) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Scr Module Type | Bridge Rectifier, Single Phase - SCR / Diode |
| Thyristor Mounting | Panel |
| On State Rms Current | - |
| Thyristor Case Style | PACE-PAK (D-19) |
| Average Forward Current | 40A |
| Gate Trigger Current Max | 60mA |
| Gate Trigger Voltage Max | 2V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
| Peak Repetitive Off State Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9104852/)

**VS-P400 Series** Vishay Semiconductors 

“SJ ~~——_.TT~~ www.vishay.com 

## **Power Modules, Passivated Assembled Circuit Elements, 40 A** 

## **FEATURES** 

- Glass passivated junctions for greater reliability 

- Electrically isolated base plate 

- Available up to 1200 VRRM/VDRM 

- High dynamic characteristics 

- Wide choice of circuit configurations 

- Simplified mechanical design and assembly 

- UL E78996 approved 

**PACE-PAK (D-19)** 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **PRIMARY CHARACTERISTICS** 

|IO|40 A|
|---|---|
|Type|Modules - thyristor, standard|
|Package|PACE-PAK (D-19)|



## **DESCRIPTION** 

The VS-P400 series of integrated power circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. 

Applications include power supplies, control circuits and battery chargers. 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**|
|IO|80 °C|40|A|
|ITSM,<br>IFSM|50 Hz|385|A|
||60 Hz|400||
|I2t|50 Hz|745|A2s|
||60 Hz|680||
|I2t||7450|A2s|
|VRRM|Range|400 to 1200|V|
|VISOL||2500|V|
|TJ||-40 to +125|°C|
|TStg||||



## **ELECTRICAL SPECIFICATIONS** 

## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|
|**TYPE NUMBER**|**VRRM/VDRM, MAXIMUM**<br>**REPETITIVE PEAK REVERSE AND**<br>**PEAK OFF-STATE VOLTAGE**<br>**V**|**VRSM, MAXIMUM**<br>**NON-REPETITIVE PEAK**<br>**REVERSE VOLTAGE**<br>**V**|**IRRM MAXIMUM**<br>**AT TJ MAXIMUM**<br>**mA**|
|VS-P401, VS-P421, VS-P431|400|500|10|
|VS-P402, VS-P422, VS-P432|600|700||
|VS-P403, VS-P423, VS-P433|800|900||
|VS-P404, VS-P424, VS-P434|1000|1100||
|VS-P405, VS-P425, VS-P435|1200|1300||



Revision: 27-Jul-2018 

Document Number: 93755 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-P400 Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**||||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**|
|Maximum DC output current<br>at case temperature|IO|Full bridge circuits|||40|A|
||||||80|°C|
|Maximum peak, one-cycle<br>non-repetitive on-state or<br>forward current|ITSM,<br>IFSM|t = 10 ms|No voltage<br>reapplied|Sinusoidal half wave,<br>initial TJ= TJmaximum|385|A|
|||t = 8.3 ms|||400||
|||t = 10 ms|100 % VRRM<br>reapplied||325||
|||t = 8.3 ms|||340||
|Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||745|A2s|
|||t = 8.3 ms|||680||
|||t = 10 ms|100 % VRRM<br>reapplied||530||
|||t = 8.3 ms|||480||
|Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied<br>I2t for time tx = I2t ·tx|||7450|A2s|
|Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.83|V|
|High level value of threshold voltage|VT(TO)2|(I >x IT(AV)), TJ= TJmaximum|||1.03||
|Low level value of on-state slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||9.61|m|
|High level value of on-state slope resistance|rt2|(I >x IT(AV)), TJ= TJmaximum|||7.01||
|Maximum on-state voltage drop|VTM|ITM=x IT(AV)||TJ= 25 °C|1.4|V|
|Maximum forward voltage drop|VFM|IFM=x IF(AV)||TJ= 25 °C|1.4|V|
|Maximum non-repetitive rate of rise of<br>turned-on current|dI/dt|TJ= 125 °C from 0.67 VDRM<br>ITM=x IT(AV), Ig= 500 mA, tr< 0.5 μs, tp> 6 μs|||200|A/μs|
|Maximum holdingcurrent|IH|TJ= 25 °C anode supply = 6 V, resistive load|||130|mA|
|Maximum latchingcurrent|IL||||250||



|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum critical rate of rise of<br>off-state voltage|dV/dt|TJ= 125 °C, exponential to 0.67 VDRMgate open|200|V/μs|
|Maximum peak reverse and off-state<br>leakage current at VRRM, VDRM|IRRM,<br>IDRM|TJ= 125 °C, gate open circuit|10|mA|
|Maximum peak reverse leakage current|IRRM|TJ= 25 °C|100|μA|
|RMS isolation voltage|VISOL|50 Hz, circuit to base, all terminals shorted,<br>TJ= 25 °C, t = 1 s|2500|V|



## **TRIGGERING** 

|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum peak gate power|PGM|||8|W|
|Maximum averagegate power|PG(AV)|||2||
|Maximum peakgate current|IGM|||2|A|
|Maximum peak negativegate voltage|-VGM|||10|V|
|Maximum gate voltage required to trigger|VGT|TJ= - 40 °C|Anode supply =<br>6 V resistive load|3|V|
|||TJ= 25 °C||2||
|||TJ= 125 °C||1||
|Maximum gate current required to trigger|IGT|TJ= - 40 °C||90|mA|
|||TJ= 25 °C||60||
|||TJ= 125 °C||35||
|Maximumgate voltage that will not trigger|VGD|TJ= 125 °C, rated VDRMapplied||0.2|V|
|Maximumgate current that will not trigger|IGD|||2|mA|



Revision: 27-Jul-2018 

Document Number: 93755 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-P400 Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum junction operating<br>and storage temperature range|TJ, TStg||-40 to +125|°C|
|Maximum thermal resistance,<br>junction to case per junction|RthJC|DC operation|1.05|K/W|
|Maximum thermal resistance,<br>case to heatsink|RthCS|Mounting surface, smooth and greased|0.10||
|Mountingtorque, base to heatsink(1)|||4|Nm|
|Approximate weight|||58|g|
||||2.0|oz.|
|Case style|||PACE-PAK (D-19)||



## **Note** 

> (1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound 

**==> picture [202 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>+<br>100 ~<br>-<br>80<br>180°<br>60<br>(sine)<br>40<br>20 T J  = 125 °C<br>0<br>0 5 10 15 20 25 30 35 40<br>93755_01a Total Output Current (A)<br>Maximum Total Power Loss (W)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125<br>93755_01b Maximum Allowable<br>Ambient Temperature (°C)<br>40<br>35 DC<br>180°<br>30 120°<br>90°<br>25 60°<br>30° RMS limit<br>20<br>15<br>Ø<br>10 Conduction period<br>5 Per junctionTJ = 125 °C<br>0<br>0 5 10 15 20 25 30 35<br>93755_03 Average On-State Current (A)<br>10 K/W<br>5 K/W<br>3 K/W<br>2 K/W<br>1.5 K/W<br>1 K/W<br>R<br>thSA<br> = 0.7 K/W - ΔR<br>Maximum Total Power Loss (W)<br>Power Loss (W)<br>Maximum Average On-State<br>**----- End of picture text -----**<br>


Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) 

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**----- Start of picture text -----**<br>
30<br>25<br>180°<br>120°<br>20 90°<br>60°<br>30° RMS limit<br>15<br>10<br>Ø<br>Conduction angle<br>5 T J  = 125 °C<br>Per junction<br>0<br>0 5 10 15 20<br>93755_02 Average On-State Current (A)<br>Power Loss (W)<br>Maximum Average On-State<br>**----- End of picture text -----**<br>


Fig. 2 - On-State Power Loss Characteristics 

Fig. 3 - On-State Power Loss Characteristics 

Revision: 27-Jul-2018 

Document Number: 93755 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-P400 Series** 

www.vishay.com 

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## Vishay Semiconductors 

**==> picture [470 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
130 350<br>Fully turned-on At any rated load condition and with<br>120 325 rated V RRM  applied following surge. Initial TJ = 125 °C<br>300 at 60 Hz 0.0083 s<br>110 180° at 50 Hz 0.0100 s<br>(Rect.) 275<br>100 180° 250<br>(Sine)<br>225<br>90<br>200<br>80<br>Per module 175 Per junction<br>70 150<br>0 5 10 15 20 25 30 35 40 45 1 10 100<br>93755_04 Total Output Current (A) 93755_06 Number of Equal Amplitude Half<br>Cycle Current Pulses (N)<br>Temperature (°C)<br>Peak Half Sine Wave On-State Current (A)<br>Maximum Allowable Case<br>**----- End of picture text -----**<br>


Fig. 4 - Current Ratings Characteristics 

Fig. 6 - Maximum Non-Repetitive Surge Current 

**==> picture [203 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>T J  = 25 °C<br>100 TJ = 125  ° C<br>10<br>Per junction<br>1<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>93755_05 Instantaneous On-State Voltage (V)<br>Instantaneous On-State Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - On-State Voltage Drop Characteristics 

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**----- Start of picture text -----**<br>
400<br>Maximum non-repetitive surge current<br>versus pulse train duration. Control of<br>350 conduction may not be maintained.<br>Initial TJ = 125 °C<br>No voltage reapplied<br>300 Rated V RRM  reapplied<br>250<br>200<br>Per junction<br>150<br>0.01 0.1 1<br>93755_07 Pulse Train Duration (s)<br>Fig. 7 - Maximum Non-Repetitive Surge Current<br>Peak Half Sine Wave  On-State Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>Steady state value<br>RthJC = 1.05 K/W<br>(DC operation)<br>1<br>Per junction<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>93755_08 Square Wave Pulse Duration (s)<br> - Transient Thermal<br>Impedance (K/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 8 - Thermal Impedance ZthJC Characteristics 

**4** 

Revision: 27-Jul-2018 

Document Number: 93755 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-P400 Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

**==> picture [410 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Rectangular gate pulse (1) PGM = 10 W,  tp = 5 ms<br>(a) Recommended load line for (2) PGM = 20 W,  tp = 25 ms<br>(b) Recommended load line forrated dI/dt: 10 V, 20  Ω , tr ≤ 1 μs (3) P(4) P GMGM  = 50 W,  t = 100 W,  t p  = 1 ms p  = 500 μs<br>10 rated dI/dt: 10 V, 65 Ω, tr ≤ 1 μs (a)<br>(b)<br>1<br>(1) (2) (3) (4)<br>VGD<br>IGD Frequency limited by P G(AV)<br>0.1<br>0.001 0.01 0.1 1 10 100<br>93755_09 Instantaneous Gate Current (A)<br>Fig. 9 - Gate Characteristics<br>JT J T J T<br>=<br>C = 25  °  40 °<br> = 125 °C C<br>Instantaneous Gate Voltage (V)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**|||**4**<br>**P**<br>**0**|**2**|**K**|**W**||
|---|---|---|---|---|---|---|---|---|---|
|||1|||3<br>2<br>4|5|6|7||
||**1**||-||Vishay Semiconductors product|||||
||**2**||-||Module type|||||
|||||||||||
||**3**||-||Current rating|||||
||||||1 = 25 A DC (P100|series)||||
||||||4 = 40 A DC (P400|series)||||
||**4**||-||Circuit confguration|||||
||||||0 = single phase, hybrid bridge common cathode|||||
||||||2 = single phase, hybrid bridge doubler connection|||||
||||||3 = single phase, all SCR bridge|||||
||**5**||-||Voltage code|||||
||||||1 =   400 V|||||
||||||2 =   600 V|||||
||||||3 =   800 V|||||
||||||4 = 1000 V|||||
||||||5 = 1200 V|||||
||**6**||-||K = optional voltage suppression|||||
|||||||||||
||**7**||-||W = optional freewheeling diode|||||



Revision: 27-Jul-2018 

Document Number: 93755 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-P400 Series** 

www.vishay.com 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

## **CIRCUIT CONFIGURATION** 

**==> picture [506 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
CIRCUIT<br>CIRCUIT DESCRIPTION CONFIGURATION  SCHEMATIC DIAGRAM TERMINAL POSITIONS<br>CODE<br>G1<br>AC1<br>Single phase, hybrid bridge  0 AC2 AC1 G1 -<br>common cathode<br>AC2 G2 +<br>G2<br>(-) (+)<br>G1 G2<br>AC2<br>Single phase, hybrid bridge  2 AC1 AC1 G1 -<br>doubler connection<br>AC2 G2 +<br>(-) (+)<br>G3 G1<br>AC1<br>AC2 G2 -<br>Single phase, all SCR bridge 3 AC2 G1 G4<br>AC1 G3 +<br>G4 G2<br>(-) (+)<br>**----- End of picture text -----**<br>


## **CODING[(1)]** 

|**CODING(1)**|**CODING(1)**|**CODING(1)**|**CODING(1)**|**CODING(1)**|**CODING(1)**|
|---|---|---|---|---|---|
|**CIRCUIT DESCRIPTION**|**CIRCUIT**<br>**CONFIGURATION**<br>**CODE**|**BASIC**<br>**SERIES**|**WITH VOLTAGE**<br>**SUPPRESSION**|**WITH**<br>**FREEWHEELING**<br>**DIODE**|**WITH BOTH**<br>**VOLTAGE SUPPRESSION**<br>**AND FREEWHEELING**<br>**DIODE**|
|Single phase, hybrid bridge<br>common cathode|0|P40.|P40.K|P40.W|P40.KW|
|Single phase, hybrid bridge<br>doubler connection|2|P42.|P42.K|-|-|
|Single phase, all SCR bridge|3|P43.|P43.K|-|-|



## **Note** 

(1)   To complete code refer to Voltage Ratings table, i.e.: for 600 V P40.W complete code is P402W 

## **LINKS TO RELATED DOCUMENTS** 

Dimensions www.vishay.com/doc?95335 

Revision: 27-Jul-2018 

Document Number: 93755 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

## **D-19 PACE-PAK** 

## **DIMENSIONS** in millimeters (inches) 

**==> picture [338 x 323] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.9 x 45°<br>(0.035 x 45°)<br>12.7 (0.50) 12.7 (0.50) Ø 1.65 (0.06)<br>4.6 (0.18)<br>25 (0.98) MAX.<br>15.5 (0.61)<br>MAX.<br>2.5 (0.10)<br>MAX.<br>63.5 (2.50)<br>Fast-on 6.35 x 0.8 (0.25 x 0.03)<br>45 (1.77)<br>23.2 (0.91) 5.2 (0.20) 32.5 (1.28) MAX.<br>33.8 (1.33)<br>48.7 (1.91)<br>**----- End of picture text -----**<br>


For technical questions, contact: indmodules@vishay.com 

www.vishay.com 1 

Document Number: 95335 Revision: 24-Jul-08 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-P405W/thyristor-bridge-rectifier-module-single-phase-40)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-p405w/thyristor-diode-module-40a/dp/9104852)
---

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