# Standard Recovery Diode, 1.2 kV, 30 A, Single, 3.15 V, 80 ns, 210 A

![Product image](https://novapart.co/image/farnell:3014223/)

**URL**: https://novapart.co/products/VS-E5TX3012-N3/standard-recovery-diode-12-kv-30-a-single-315-v-80
**SKU**: VS-E5TX3012-N3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €2.8200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 3.15V |
| Forward Surge Current | 210A |
| Reverse Recovery Time | 80ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3014223/)

**VS-E5TX3012-N3** 

~~—~~ www.vishay.com 

## Vishay Semiconductors 

## **Hyperfast Rectifier, 30 A FRED Pt[®] G5** 

## **FEATURES** 

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2L TO-220AC<br>**----- End of picture text -----**<br>


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Base cathode<br>2<br>2<br>1 3<br>Cathode Anode<br>**----- End of picture text -----**<br>


- Hyperfast and optimized Qrr 

- Best in class forward voltage drop and switching losses trade off 

- Optimized for high speed operation 

- 175 °C maximum operating junction temperature 

- Polyimide passivation 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|30 A|
|VR|1200 V|
|VFat IFat 125 °C|2.1 V|
|trr|26 ns|
|TJmax.|175 °C|
|Package|2L TO-220AC|
|Circuit configuration|Single|



## **DESCRIPTION / APPLICATIONS** 

Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Repetitive peak reverse voltage|VRRM||1200|V|
|Average rectified forward current|IF(AV)|TC= 90 °C, D = 0.50|30|A|
|Non-repetitive peak surge current|IFSM|TC= 45 °C, tp= 10 ms, sine wave|210||
|Repetitive peak forward current|IFRM|TC= 90 °C, D = 0.50, f = 20 kHz|60||
|Operatingjunction and storage temperature|TJ, TStg||-55 to +175|°C|



~~|~~ **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) ~~a~~ **PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS** ~~ee~~ Breakdown voltage, blocking voltage VVBRR , IR = 100 μA 1200 - - IF = 30 A - 2.6 3.15 V Forward voltage VF ~~a~~ IF = 30 A, TJ = 125 °C - 2.1 - ~~ee~~ VR = VR rated ~~eee~~ - - 50 ~~qe~~ Reverse leakage current IR TJ = 125 °C, VR = VR rated - - 500 μA ~~I~~ Junction capacitance CT VR = 200 V - 17 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH ~~a~~ 

Revision: 09-May-2018 

Document Number: 96507 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-E5TX3012-N3** 

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www.vishay.com 

## Vishay Semiconductors 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 100 A/μs, VR= 30 V||-|26|-|ns|
|||TJ= 25 °C|IF= 20 A<br>dIF/dt = 600 A/μs<br>VR= 400 V|-|100|-||
|||TJ= 125 °C||-|150|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|12|-|A|
|||TJ= 125 °C||-|22|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|530|-|nC|
|||TJ= 125 °C||-|1550|-||
|Reverse recovery time|trr|TJ= 25 °C|IF= 30 A<br>dIF/dt = 1000 A/μs<br>VR= 800 V|-|80|-|ns|
|||TJ= 125 °C||-|120|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|22|-|A|
|||TJ= 125 °C||-|37|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|900|-|nC|
|||TJ= 125 °C||-|2300|-||



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Thermal resistance, junction-to-case|RthJC||-|-|1.2|°C/W|
|Weight|||-|2.0|-|g|
||||-|0.07|-|oz.|
|Mounting torque|||6.0<br>(5.0)|-|12<br>(10)|kgf · cm<br>(lbf · in)|
|Maximum junction and storage temperature range|TJ, TStg||-55|-|175|°C|
|Markingdevice||Case style: 2L TO-220AC|E5TX3012||||



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**----- Start of picture text -----**<br>
100<br>10<br>TJ = 175°C<br>TJ = 125°C<br>1 TJ = 25 °C<br>0.1<br> 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VF - Forward Voltage Drop (V)<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


Fig. 1 - Typical Forward Voltage Drop Characteristics 

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1000<br>T J = 175 °C<br>100<br>T J = 125 °C<br>10<br>1 T J = 25 °C<br>0.1<br>0 200 400 600 800 1000 1200<br>VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

Revision: 09-May-2018 

Document Number: 96507 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-E5TX3012-N3** 

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www.vishay.com 

## Vishay Semiconductors 

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1000<br>100<br>10<br>0 200 400 600 800 1000 1200<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

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180<br>170<br>160<br>150 DC<br>140<br>130<br>120<br>110<br>100<br>Square wave (D = 0.50)<br>90 rated VR applied<br>80<br>0 5 10 15 20 25 30<br>IF(AV) - Average Forward Current (A)<br>C)<br>°<br>Allowable Solder Pad Temperature (<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 

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**----- Start of picture text -----**<br>
10<br>1<br>0.1 0.50<br>0.20<br>0.10<br>0.05<br>0.01 DC 0.02<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1 - Rectangular Pulse Duration (s)<br>Fig. 5 - Thermal Impedance ZthJC Characteristics<br>200 2600<br>190 T J  = 125 °C 2400 TJ = 125 °CJ = 125 °C = 125 °C 30 A, 800 V<br>180<br>2200<br>170<br>160 20 A, 400 V 2000<br>150 1800<br>140<br>1600<br>130<br>1400<br>120 30 A, 800 V<br>1200<br>110<br>100 1000<br>200 400 600 800 1000 1200 200 400 600 800 1000<br>dIF/dt (A/μs) dIF/dt (A/μs)F/dt (A/μs)/dt (A/μs)<br>C/W)<br>°<br>- Thermal Impedance<br>thJC Junction to Case (<br>Z<br> (ns)trr  (nC)Qrrrr<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2600<br>TJ = 125 °CJ = 125 °C = 125 °C<br>2400 30 A, 800 V<br>2200<br>2000<br>1800<br>20 A, 400 V<br>1600<br>1400<br>1200<br>1000<br>200 400 600 800 1000 1200<br>dIF/dt (A/μs)F/dt (A/μs)/dt (A/μs)<br>Qrr (nC)Qrrrr<br>**----- End of picture text -----**<br>


Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 

Fig. 7 - Typical Stored Charge vs. dIF/dt 

Revision: 09-May-2018 

Document Number: 96507 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-E5TX3012-N3** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
45<br>40 TJ = 125 °C<br>35<br>30 30 A, 800 V<br>25<br>20 20 A, 400 V<br>15<br>10<br>5<br>0<br>200 400 600 800 1000 1200<br>dIF/dt (A/μs)<br> (A)<br>Irr<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Recovery Current vs. dIF/dt 

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(3)<br>trr<br>ta tb<br>IF<br>t0 t10 %<br>0<br>0.1 IRRM<br>(2)<br>IRRM Qrr [(4)]<br>di(rec)M/dt (5)<br>(1) diF/dt<br>Fig. 9 - Reverse Recovery Waveform and Definitions<br>**----- End of picture text -----**<br>


## **Notes** 

- (1) diF/dt - rate of change of current through zero crossing 

> (2) IRRM - peak reverse recovery current 

> (3) trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM 

- (4) Qrr - area under curve defined by t0 and t10 % 

t10 % Qrr =  I  t dt t0 

- (5) di(rec)M/dt - peak rate of change of current during tb portion of trr 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**QUANTITY PER TUBE**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-E5TX3012-N3|50|1000||Antistatic plastic tube|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96069||
|Part markinginformation|||www.vishay.com/doc?95391||



Revision: 09-May-2018 

**4** 

Document Number: 96507 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

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www.vishay.com 

## Vishay Semiconductors 

## **2L TO-220AC** 

## **DIMENSIONS** in millimeters and inches 

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B<br>Seating<br>(6) A plane<br>E Ø P A A Thermal pad<br>E2 (7) 0.014 M B A M A1 E<br>Q<br>(6) H1 H1<br>(7)<br>D2  (6)<br>(6) D Detail B<br>D1<br>1 2<br>(2) L1 C<br>E1  (6)<br>1 2 Base metal (b, b2) Plating<br>L D D<br>L1 (2)<br>C C c c1 (4)<br>e1 2 x b 2 x b2 c A b1, b3 (4)<br>Detail B A2 View A - A Section C - C and D - D<br>0.015 M B A M<br>**----- End of picture text -----**<br>


|**SYMBOL**<br><br>|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A<br>|4.25|4.65|0.167|0.183|||E1|6.86|8.89|0.270|0.350|6|
|A1<br>|1.14|1.40|0.045|0.055|||E2|-|0.76|-|0.030|7|
|A2<br>|2.56|2.92|0.101|0.115|||e|2.41|2.67|0.095|0.105||
|b<br>|0.69|1.01|0.027|0.040|||e1|4.88|5.28|0.192|0.208||
|b1<br>|0.38|0.97|0.015|0.038|4||H1|6.09|6.48|0.240|0.255|6, 7|
|b2<br>|1.20|1.73|0.047|0.068|||L|13.52|14.02|0.532|0.552||
|b3<br>|1.14|1.73|0.045|0.068|4||L1|3.32|3.82|0.131|0.150|2|
|c<br>|0.36|0.61|0.014|0.024|||Ø P|3.54|3.73|0.139|0.147||
|c1<br>|0.36|0.56|0.014|0.022|4||Q|2.60|3.00|0.102|0.118||
|D<br>1|4.85|15.25|0.585|0.600|3||||||||
|D1<br>|8.38|9.02|0.330|0.355|||||||||
|D2<br>1|1.68|12.88|0.460|0.507|6||||||||
|E<br>1|0.11|10.51|0.398|0.414|3, 6||||||||



## **Notes** 

- (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 

- (2) Lead dimension and finish uncontrolled in L1 

> (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body 

- (4) Dimension b1, b3 and c1 apply to base metal only 

- (5) Controlling dimension: inches 

- (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 

- (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed 

- (8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480". 

Revision: 06-Dec-17 

Document Number: 96069 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-E5TX3012-N3/standard-recovery-diode-12-kv-30-a-single-315-v-80)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/vishay/vs-e5tx3012-n3/rectifier-single-30a-1-2kv-to/dp/3014223)
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