# IGBT Module, Three Phase Inverter, 11 A, 2 V, 36 W, 150 °C, SIP

![Product image](https://novapart.co/image/farnell:2101469/)

**URL**: https://novapart.co/products/VS-CPV363M4FPBF/igbt-module-three-phase-inverter-11-a-2-v-36-w-150
**SKU**: VS-CPV363M4FPBF
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €19.7900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 13Pins |
| Igbt Technology | IGBT 2 Fast |
| Igbt Termination | Solder |
| Power Dissipation | 36W |
| Igbt Configuration | Three Phase Inverter |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Dc Collector Current | 11A |
| Power Dissipation Pd | 36W |
| Transistor Case Style | SIP |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 11A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2101469/)

**VS-CPV363M4FPbF** 

www.vishay.com 

## Vishay Semiconductors 

## **IGBT SIP Module (Fast IGBT)** 

## **FEATURES** 

- Fully isolated printed circuit board mount package 

- Switching-loss rating includes all “tail” losses 

- HEXFRED[®] soft ultrafast diodes 

- Optimized for medium speed 1 kHz to 10 kHz, see fig. 1 for current vs. frequency curve 

**==> picture [25 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
IMS-2<br>**----- End of picture text -----**<br>


## **PRIMARY CHARACTERISTICS** 

## **OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|**OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE**||
|VCES|600 V|
|IRMSper phase (3.1 kW total) with<br>TC= 90 °C|11 ARMS|
|TJ|125 °C|
|Supply voltage|360 VDC|
|Power factor|0.8|
|Modulation depth (see fig. 1)|115 %|
|VCE(on)(typical) at IC= 8.7 A, 25 °C|1.37 V|
|Speed|1 kHz to 10 kHz|
|Package|SIP|
|Circuit configuration|Three phase inverter|



- Designed and qualified for industrial level 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION** 

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (insulated metal substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. 

|**ABSOLUTE MAXIMUM RATINGS**<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**<br>~~Cn~~|
|---|---|---|---|---|
|**PARAMETER**<br>~~Cn~~<br>~~a~~|**SYMBOL**<br>~~Cn~~<br>~~a~~|**TEST CONDITIONS**<br>~~Cn~~<br>~~a~~|**MAX.**<br>~~Cn~~<br>~~a~~|**UNITS**<br>~~Cn~~<br>~~a~~|
|Collector to emitter voltage<br>~~a~~|VCES<br>~~a~~|~~a~~|600<br>~~a~~|V<br>~~a~~|
|Continuous collector current, each IGBT<br>~~a~~<br>~~ae~~|IC<br>~~a~~<br>~~ae~~|TC= 25 °C<br>~~a~~<br>~~ae~~|16<br>~~a~~<br>~~ae~~|A<br>~~a~~<br>~~ae~~|
|||TC= 100 °C<br>~~ae~~|8.7<br>~~ae~~||
|Pulsed collector current<br>~~ae~~<br>~~a~~|ICM (1)<br>~~ae~~<br>~~a~~|~~ae~~<br>~~a~~|50<br>~~ae~~<br>~~a~~||
|Clamped inductive load current<br>~~ae~~<br>~~a~~|ILM (2)<br>~~ae~~<br>~~a~~|~~ae~~<br>~~a~~|50<br>~~ae~~<br>~~a~~||
|Diode continuous forward current<br>~~ae~~<br>~~a~~|IF<br>~~ae~~<br>~~a~~|TC= 100 °C<br>~~ae~~<br>~~a~~|6.1<br>~~ae~~<br>~~a~~||
|Diode maximum forward current<br>~~ae~~<br>~~ee~~|IFM<br>~~ae~~<br>~~ee~~|~~ae~~<br>~~ee~~|50<br>~~ae~~<br>~~ee~~||
|Gate to emitter voltage<br>~~ee~~|VGE<br>~~ee~~|~~ee~~|± 20<br>~~ee~~|V<br>~~ee~~|
|Isolation voltage<br>~~a~~|VISOL|Any terminal to case, t = 1 min|2500<br>~~ee~~|VRMS|
|Maximum power dissipation, each IGBT<br>~~a~~<br>~~a~~|PD<br>~~ce~~|TC= 25 °C<br>~~ce~~|36<br>~~ce~~<br>~~ee~~|W<br>~~ce~~|
|||TC= 100 °C<br>~~ce~~|14<br>~~ce~~<br>~~ee~~||
|Operatingjunction and storage temperature range<br>~~a~~<br>~~es~~|TJ, TStg<br>~~ce~~<br>~~es~~|~~ce~~<br>~~es~~|-40 to +150<br>~~ce~~<br>~~ee~~<br>~~es~~|°C<br>~~ce~~<br>~~es~~|
|Solderingtemperature<br>~~es~~<br>~~a~~|~~es~~<br>~~a~~|For 10 s, (0.063" (1.6 mm) from case)<br>~~es~~<br>~~a~~|300<br>~~es~~<br>~~a~~||
|Mounting torque<br>~~Pe~~|~~Pe~~|6-32 or M3 screw<br>~~Pe~~|5 to 7<br>(0.55 to 0.8)<br>~~Pe~~|lbfin<br>(Nm)<br>~~Pe~~|



> (2) VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 22  (see fig. 19) 

Revision: 25-Oct-17 

Document Number: 94484 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-CPV363M4FPbF** 

**==> picture [59 x 48] intentionally omitted <==**

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Vishay Semiconductors 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**||||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNITS**|
|Junction to case, each IGBT, one IGBT in conduction|RthJC|-|3.5|°C/W|
|Junction to case, each DIODE, one DIODE in conduction|RthJC|-|5.5||
|Case to sink, flat,greased surface|RthCS|0.10|-||
|Weight of module||20|-|g|
|||0.7|-|oz.|



## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Collector to emitter breakdown voltage|V(BR)CES (1)|VGE= 0 V, IC= 250 μA||600|-|-|V|
|Temperature coefficient of breakdown voltage|V(BR)CESTJ|VGE= 0 V, IC= 1.0 mA||-|0.69|-|V/°C|
|Collector to emitter saturation voltage|VCE(on)|IC= 8.7 A|VGE= 15 V<br>see fig. 2, 5|-|1.37|1.5|V|
|||IC= 16 A||-|1.63|-||
|||IC= 8.7 A, TJ= 150 °C||-|1.37|-||
|Gate threshold voltage|VGE(th)|VCE= VGE, IC= 250 μA||3.0|-|6.0||
|Temperature coefficient of threshold voltage|VGE(th)/TJ|||-|- 11|-|mV/°C|
|Forward transconductance|gfe (2)|VCE= 100 V, IC= 8.7 A||6.0|8.0|-|S|
|Zero gate voltage collector current|ICES|VGE= 0 V, VCE= 600 V||-|-|250|μA|
|||VGE= 0 V, VCE= 600 V, TJ= 150 °C||-|-|2500|μA|
|Diode forward voltage drop|VFM|IC= 12 A|see fig. 13|-|1.3|1.7|V|
|||IC= 12 A, TJ= 150 °C||-|1.2|1.6|V|
|Gate to emitter leakage current|IGES|VGE= ± 20 V||-|-|± 100|nA|



## **Notes** 

> (1) Pulse width  80 μs, duty factor  0.1 % 

> (2) Pulse width 5.0 μs; single shot 

Revision: 25-Oct-17 

Document Number: 94484 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-CPV363M4FPbF** 

**==> picture [59 x 48] intentionally omitted <==**

## www.vishay.com 

## Vishay Semiconductors 

|**SWITCHING CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**SWITCHING CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**SWITCHING CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**SWITCHING CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**SWITCHING CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Totalgate charge (turn-on)|Qg|IC= 8.7 A<br>VCC= 400 V<br>VGE= 15 V<br>see fig. 8|||-|54|82|nC|
|Gate to emitter charge (turn-on)|Qge||||-|8.1|12||
|Gate to collector charge (turn-on)|Qgc||||-|21|32||
|Turn-on delay time|td(on)|TJ= 25 °C<br>IC= 8.7 A, VCC= 480 V<br>VGE= 15 V, RG= 22<br>Energy losses include “tail” and diode<br>reverse recovery.<br>see fig. 9, 10, 11, 18|||-|39|-|ns|
|Rise time|tr||||-|16|-||
|Turn-off delay time|td(off)||||-|220|330||
|Fall time|tf||||-|160|240||
|Turn-on switchingloss|Eon||||-|0.30|-|mJ|
|Turn-off switchingloss|Eoff||||-|0.55|-||
|Total switchingloss|Ets||||-|0.85|1.3||
|Turn-on delay time|td(on)|TJ= 150 °C,<br>IC= 8.7 A, VCC= 480 V<br>VGE= 15 V, RG= 22<br>Energy losses include “tail” and<br>diode reverse recovery<br>see fig. 9, 10, 11, 18|||-|37|-|ns|
|Rise time|tr||||-|16|-||
|Turn-off delay time|td(off)||||-|400|-||
|Fall time|tf||||-|290|-||
|Total switchingloss|Ets||||-|1.57|-|mJ|
|Input capacitance|Cies|VGE= 0 V<br>VCC= 30 V<br>ƒ = 1.0 MHz<br>see fig. 7|||-|1100|-|pF|
|Output capacitance|Coes||||-|74|-||
|Reverse transfer capacitance|Cres||||-|14|-||
|Diode reverse recovery time|trr|TJ= 25 °C|see fig. 14|IF= 12 A<br>VR= 200 V<br>dI/dt = 200 A/μs|-|42|60|ns|
|||TJ= 125 °C|||-|80|120||
|Diode peak reverse recovery charge|Irr|TJ= 25 °C|see fig. 15||-|3.5|6.0|A|
|||TJ= 125 °C|||-|5.6|10||
|Diode reverse recovery charge|Qrr|TJ= 25 °C|see fig. 16||-|80|180|nC|
|||TJ= 125 °C|||-|220|600||
|Diode peak rate of fall of recovery<br>during tb|dI(rec)M/dt|TJ= 25 °C|see fig. 17||-|180|-|A/μs|
|||TJ= 125 °C|||-|116|-||



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14 4.10<br>TC = 90 °C<br>12 T J = 125 °C 3.51<br>Power factor = 0.8<br>Modulation depth = 1.15<br>10 V CC  = 50 % of rated voltage 2.93<br>8 2.34<br>6 1.76<br>4 1.17<br>2 0.59<br>0 0.00<br>0.1  1  10  100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = IRMS of Fundamental)<br>Load Current (A)<br>Total Output Power (kW)<br>**----- End of picture text -----**<br>


Revision: 25-Oct-17 

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**VS-CPV363M4FPbF** 

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## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
100<br>TJ  = 25  ° C<br>TJ = 150 °C<br>10<br>VGE = 15 V<br>20 μs pulse width<br>1<br>1 10<br> - Collector-to-Emitter Current (A)<br>IC<br>**----- End of picture text -----**<br>


**VCE - Collector-to-Emitter Voltage (V)** 

Fig. 2 - Typical Output Characteristics 

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**----- Start of picture text -----**<br>
20<br>16<br>12<br>8<br>4<br>0<br>25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Collector Current (A)<br>Maximum DC<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Collector Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
100<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>VCC = 50 V<br>5 μs pulse width<br>1<br>5              6             7              8              9             10<br>VGE - Gate-to-Emitter Voltage (V)<br> - Collector-to-Emitter Current (A)<br>IC<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
2.0<br>V     = 15 VGE<br>80 μs pulse width<br>1.8<br>I   =        AC  17.4<br>1.6<br>1.4 I   =       A C 8.7<br>1.2<br>I   =         A C 4.35<br>1.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ - Junction Temperature (°C)<br>Collector-to-Emitter Voltage (V)<br>-<br>CE<br>V<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature 

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**----- Start of picture text -----**<br>
10<br>D = 0.50<br>1<br>0.20<br>0.10 P DM<br>0.05<br>0.02 t1<br>0.1<br>0.01 t2<br>      Single pulse<br>(thermal response) Notes:<br>1. Duty factor D = t1 / t2<br>2. Peak TJ = PDM x ZthJC + TC<br>0.01<br>0.00001                  0.0001                    0.001                       0.01                          0.1                           1                           10<br>t1 - Rectangular Pulse Duration (s)<br>Thermal Response (°C/W)<br>-<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 

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Vishay Semiconductors 

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**----- Start of picture text -----**<br>
2000<br>VGE = 0 V,f = 1MHz<br>Cies = Cge + Cgc, C    ce  [shorted]<br>Cres = Cgc<br>1600 Coes = C ce + C gc<br>1200 Cies<br>800<br>400 Coes<br>C res<br>0<br> 1  10  100<br>VCE - Collector-to-Emitter Voltage (V)<br>Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage<br>20<br>VCC = 400 V<br>IC = 8.7 A<br>16<br>12<br>8<br>4<br>0<br>0 10 20 30 40 50 60<br>QG - Total Gate Charge (nC)<br>Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage<br>0.90<br>V     = 480 VCC<br>V     = 15 VGE<br>0.88 T  = 25 J ° C<br>I   = 8.7 AC<br>0.86<br>0.84<br>0.82<br>0.80<br>0 10 20 30 40 50<br>RG -  Gate Resistance ( Ω )<br>- Capacitance (pF)<br>C<br>Gate-to-Emitter Voltage (V)<br>-<br>GE<br>V<br> Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage 

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage 

Fig. 9 - Typical Switching Losses vs. Gate Resistance 

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**----- Start of picture text -----**<br>
 10<br>R   = 22 G Ω<br>V    = 15 VGE<br>V     = 480 VCC I   =        AC 17.4<br>I   =       AC 8.7<br> 1<br>I   =         AC 4.35<br>0.1<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ - Junction Temperature (°C)<br> Total Switching Loss (mJ)<br>**----- End of picture text -----**<br>


Fig. 10 - Typical Switching Losses vs. Junction Temperature 

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**----- Start of picture text -----**<br>
4.0<br>R   =G 22 Ω<br>T   = 150 J ° C<br>V     = 480 VCC<br>3.0 V     = 15 V GE<br>2.0<br>1.0<br>0.0<br>0 4 8 12 16 20<br>IC - Collector-to-Emitter Current (A)<br> Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current 

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**----- Start of picture text -----**<br>
 100<br>V     = 20 V GE<br>T  = 125 °C J<br> 10<br>Safe operating area<br> 1<br> 1  10  100  1000<br>VCE - Collector-to-Emitter Voltage (V)<br>Collector-to-Emitter Current (A)<br>-<br>IC<br>**----- End of picture text -----**<br>


Fig. 12 - Turn-Off SOA 

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Vishay Semiconductors 

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**----- Start of picture text -----**<br>
100<br>T  = 150 °CJ<br>10 T  = 125  J °C<br>T   J = 25 °C<br>1<br>0.4           0.8           1.2           1.6            2.0           2.4<br>VFM - Forward Voltage Drop (V)<br>Instantaneous Forward Current (A)<br>-<br>IF<br>**----- End of picture text -----**<br>


Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 

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**----- Start of picture text -----**<br>
100<br>V   = 200 V R<br>T   = 125 J ° C<br>T   = 25 °C J<br>I   = 24 A F<br>10 I   = 12 AF<br>I   = 6.0 AF<br>1<br>100 1000<br>dIFdt (A/μs)<br> (A)<br>IRRM<br>**----- End of picture text -----**<br>


Fig. 15 - Typical Recovery Current vs. dIF/dt 

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**----- Start of picture text -----**<br>
160<br>V   = 200 VT   = 125 R J °C<br>T   = 25 °CJ<br>120<br>I   = 24 AF<br>I   = 12 AF<br>80<br>I   = 6.0 AF<br>40<br>0<br>100 1000<br>dIFdt (A/μs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br>


Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 

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**----- Start of picture text -----**<br>
600<br>V   = 200 VR<br>T   = 125 °CJ<br>T   = 25 °C J<br>400<br>I   = 24 AF<br>200 I   = 12 AF<br>I   = 6.0 AF<br>0<br>100 1000<br>dIFdt (A/μs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 16 - Typical Stored Charge vs. dIF/dt 

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**----- Start of picture text -----**<br>
10 000<br>V  = 200 VR<br>T  = 125 J °C<br>T  = 25 °CJ<br>1000<br>I   = 6.0 AF<br>I   = 12 AF<br>100<br>I   = 24 AF<br>10<br>100 1000<br>dIFdt (A/μs)<br>/dt (A/μs)<br>(rec)M<br>dI<br>**----- End of picture text -----**<br>


Fig. 17 - Typical dI(rec)M/dt vs dIF/dt 

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## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
Same type<br>device as<br>D.U.T.<br>80 % 430 μF<br>of VCE D.U.T.<br>**----- End of picture text -----**<br>


Fig.18a - Test Circuit for Measurements of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 

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**----- Start of picture text -----**<br>
GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>5% Vce<br>td(on) tr t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>


Fig.18b - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 

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**----- Start of picture text -----**<br>
90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =  Vce ic dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>


Fig.18c - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf 

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**----- Start of picture text -----**<br>
trr<br>trr<br>Qrr =  id dt<br>Ic<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>t4<br>Erec = Vd id dt<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>∫<br>**----- End of picture text -----**<br>


Fig.18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 

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**----- Start of picture text -----**<br>
Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br>


Fig.18e - Macro Waveforms for Figure 18a’s Test Circuit 

**7** 

Revision: 25-Oct-17 

Document Number: 94484 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-CPV363M4FPbF** 

www.vishay.com 

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## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
1000 VL VC D.U.T. RL = 4 x I480 VC at 25 °C<br>0 V to 480 V<br>50 V 6000 μF<br>100 V<br>Fig.19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit<br>**----- End of picture text -----**<br>


## **CIRCUIT CONFIGURATION** 

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**----- Start of picture text -----**<br>
Q1 Q3 Q5<br>3 D1 9 D3 15 D5<br>4 10 16<br>Q2 Q4 Q6<br>6 D2 12 D4 18 D6<br>7 13 19<br>**----- End of picture text -----**<br>


## **LINKS TO RELATED DOCUMENTS** 

Dimensions www.vishay.com/doc?95066 

Revision: 25-Oct-17 

Document Number: 94484 

**8** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

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## Vishay Semiconductors 

## **IMS-2 (SIP)** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
62.43 (2.458) 7.87 (0.310)<br>Ø 3.91 (0.154)<br>        2 x 53.85 (2.120) 5.46 (0.215)<br>21.97 (0.865)<br>1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015)<br>3.94 (0.155)<br>1.27 (0.050)<br> 3.05 ± 0.38<br>(0.160 ± 0.020) 4.06 ± 0.51 1.27 (0.050      13 x ) (0.120 ± 0.015)<br>5.08 (0.200) 2.54 (0.100)      6 x 0.76 (0.030)     13 x 0.51 (0.020)<br>       6 x 6.10 (0.240)<br>IMS-2 Package Outline (13 Pins)<br>**----- End of picture text -----**<br>


## **Notes** 

> (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") 

- (2) Controlling dimension: inch 

- (3) Terminal numbers are shown for reference only 

For technical questions, contact: indmodules@vishay.com 

www.vishay.com 1 

Document Number: 95066 Revision: 30-Jul-07 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-CPV363M4FPBF/igbt-module-three-phase-inverter-11-a-2-v-36-w-150)
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- [Supplier page](https://es.farnell.com/en-ES/vishay/vs-cpv363m4fpbf/igbt-module-600v-16a-ims-2/dp/2101469)
---

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