# Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 28 nC, TO-220AC

![Product image](https://novapart.co/image/farnell:3534739/)

**URL**: https://novapart.co/products/VS-C10ET07T-M3/silicon-carbide-schottky-diode-single-650-v-10-a
**SKU**: VS-C10ET07T-M3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.4900
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 28nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3534739/)

**VS-C10ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **650 V Power SiC Merged PIN Schottky Diode, 10 A** 

## **FEATURES** 

**==> picture [219 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
Base cathode<br>2<br>2<br>1<br>1 3<br>3 Cathode Anode<br>  2L TO-220AC<br>**----- End of picture text -----**<br>


- Majority carrier diode using Schottky technology on SiC wide band gap material 

- Positive VF temperature coefficient for easy paralleling 

- Virtually no recovery tail and no switching losses 

- Temperature invariant switching behavior 

- 175 °C maximum operating junction temperature 

- MPS structure for high ruggedness to forward current surge events 

## **LINKS TO ADDITIONAL RESOURCES** 

> 3D Models CE] SPICE Models Application Notes 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|10 A|
|VR|650 V|
|VFat IFat 150 °C|1.75 V|
|TJmax.|175 °C|
|IRat VRat 175 °C|5 μA|
|QC(VR= 400 V)|28 nC|
|Package|2L TO-220AC|
|Circuit configuration|Single|



- Meets JESD 201 class 1A whisker test 

- Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION / APPLICATIONS** 

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. 

Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. 

Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. 

## **MECHANICAL DATA** 

## **Case:** 2L TO-220AC 

Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

**Mounting torque:** 10 in-lbs maximum 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CO~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CO~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CO~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CO~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CO~~|
|---|---|---|---|---|
|**PARAMETER**<br>~~CO~~<br>~~a~~|**SYMBOL**<br>~~a~~|**TEST CONDITIONS**<br>~~a~~|**VALUES**<br>~~a~~|**UNITS**<br>~~a~~|
|Peak repetitive reverse voltage<br>~~a~~<br>~~a~~|VRRM<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|650<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|Average rectified forward current<br>~~a~~|IF(AV)<br>~~a~~|TC= 125 °C (DC)<br>~~a~~|10<br>~~a~~|A<br>~~a~~|
|DC blockingvoltage<br>~~a~~|VDC<br>~~a~~|~~a~~|650<br>~~a~~|V<br>~~a~~|
|Repetitive peak surge current<br>~~Sn~~<br>~~ee~~|IFRM<br>~~Sn~~<br>~~CO~~|TC= 25 °C, f = 50 Hz, square wave, DC = 25 %<br>~~Sn~~<br>~~CO~~|35<br>~~Sn~~<br>~~eee~~|A<br>~~Sn~~<br>~~ee~~|
|Non-repetitive peak forward surge current<br>~~Sn~~<br>~~es~~<br>~~ee~~<br>~~ee~~|IFSM<br>~~Sn~~<br>~~es~~<br>~~CO~~|TC= 25 °C, tp= 10 ms, half sine wave<br>~~Sn~~<br>~~es~~<br>~~CO~~|68<br>~~Sn~~<br>~~es~~<br>~~eee~~|A<br>~~Sn~~<br>~~es~~<br>~~ee~~<br>~~ee~~|
|||TC= 110 °C, tp= 10 ms, half sine wave<br>~~es~~<br>~~CO~~<br>~~ee~~|60<br>~~es~~<br>~~eee~~<br>~~ee~~||
|Power dissipation<br>~~ee~~<br>~~ee~~|Ptot (1)<br>~~CO~~|TC= 25 °C<br>~~CO~~<br>~~ee~~|60<br>~~eee~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~|
|||TC= 110 °C<br>~~CO~~<br>~~ee~~|26<br>~~eee~~<br>~~ee~~||
|I2t value<br>~~ee~~<br>~~ee~~|i2 t<br>d<br><br>~~CO~~|TC= 25 °C<br>~~CO~~<br>~~ee~~<br>~~see~~|23<br>~~eee ~~<br>~~ee~~<br>~~see~~|A2s<br> ~~ee~~<br>~~ee~~<br>~~see~~|
|||TC= 110 °C<br>~~ee~~<br>~~see~~|18<br>~~ee~~<br>~~see~~||
|Operatingjunction and storage temperatures<br>~~ee~~<br>~~a~~|TJ(2), TStg<br>~~a~~|~~ee~~<br>~~a~~|-55 to +175<br>~~ee ~~<br>~~a~~|°C<br> ~~ee~~<br>~~a~~|



**Notes** 

> (1) Based on maximum Rth 

> (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/R  JA 

Revision: 21-Sep-2022 

Document Number: 96721 

**1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-C10ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Forward voltage|VF|IF= 10 A|-|1.50|1.80|V|
|||IF= 10 A, TJ= 150 °C|-|1.75|1.95||
|||IF= 10 A, TJ= 175 °C|-|1.85|-||
|Reverse leakage current|IR|VR= VRrated|-|-|55|μA|
|||VR= VRrated, TJ= 150 °C|-|-|125||
|||VR= VRrated, TJ= 175 °C|-|5|-||
|Total capacitance|C|VR= 1 V, f = 1 MHz|-|430|-|pF|
|||VR= 400 V, f = 1 MHz|-|45|-||
|Total capacitive charge|QC|VR= 400 V, f = 1 MHz|-|28|-|nC|



|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Thermal resistance, junction-to-case|RthJC||-|1.8|2.5|°C/W|
|Markingdevice|||C10ET07T||||



**==> picture [209 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 10000<br>15 T J = 25 °C<br>1000<br>TJ = -55 °C<br>TJ = 125 °C<br>10 T J = 150 °C<br>TJ = 175 °C<br>100<br>5<br>0 10<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br>Axis Title<br>10 10000<br>1<br>1000<br>0.1 TJ = 175 °C<br>TJ = 150  ° C 100<br>0.01 TJ = 125 °C<br>TTJJ = 25 °C= -55 °C<br>0.001 10<br>0 100 200 300 400 500 600 700<br>VR - Reverse Voltage (V)<br> - Instantaneous Forward Current (A)IF<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

**==> picture [209 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10000<br>1000<br>100<br>100<br>TJ = 25 °C<br>f = 1.0 MHz<br>10 10<br>0.1 1 10 100 1000<br>VR - Reverse Voltage (V)<br>C - Junction Capacitance (pF)T<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

**==> picture [209 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10000<br>T J  = 25 °C 1000<br>100<br>TJ = 110 °C<br>100<br>10 10<br>1.00E-04 1.00E-03 1.00E-02<br>tp (s)<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) 

Revision: 21-Sep-2022 

Document Number: 96721 

**2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-C10ET07T-M3** 

Vishay Semiconductors 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


**==> picture [482 x 598] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10000<br>1 1000<br>D = 0.5<br>0.1 D = 0.2 100<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>D = 0.01<br>DC<br>0.01 | TTT ET aee el 10<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1 - Rectangular Pulse Duration (s)<br>Fig. 5 - Typical Thermal Impedance ZthJC Characteristics<br>Axis Title Axis Title<br>175 10000 12 10000<br>150 10<br>PAT TT PT eT<br>125 aa 1000 8 TTT 1000<br>Nee PT eT<br>100 6<br>et yt Ty PTETTy TY<br>75 aaa 100 4 PLY 100<br>TJ = 25 °C<br>f = 1.0 MHz<br>50 2<br>25 ety ey yy 10 0 ete 10<br>0 PTT 2 4 TTT 6 8 10 12 14 0 Lat 100 200 | 300 | 400 here 500 600 700<br>IF(AV) - Average Forward Output Current (A) Reverse Voltage (V)<br>Fig. 6 - Maximum Allowable Case Temperature vs.  Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage<br>Average Forward Current<br>Axis Title Axis Title<br>90 10000 50 10000<br>80<br>70 40<br>SEES Tey TT<br>60 1000 1000<br>RSE 30 COO<br>50 R thJC  typ.<br>40 SX -<br>PN NT 20 | ae<br>30 R thJC  max. 100 TJ = 25 °C 100<br>20 Nes a f = 1.0 MHz<br>10<br>10<br>0 fooaNepS 10 0 JoAeesfew 10<br>25 50 75 100 125 150 175 0 100 200 300 400 500 600 700<br>Case Temperature (°C) Reverse Voltage (V)<br>Fig. 7 - Forward Power Loss Characteristics Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage<br> - Thermal Impedance<br>thJC Junction to Case (°C/W)<br>Z<br>(µJ)<br>line Energy<br>2nd line 1st line 2nd line 2nd Capacitive<br>Allowable Case Temperature (°C)<br>(nC)<br>line<br>Charge<br>2nd line 1st line 2nd line 2nd<br>Capacitive<br>Allowable Input Power (W)<br>**----- End of picture text -----**<br>


Revision: 21-Sep-2022 

Document Number: 96721 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-C10ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

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**----- Start of picture text -----**<br>
Device code VS- C 10 E T 07 T -M3<br>1 2 3 4 5 6 7 8<br>1 - Vishay Semiconductors product<br>2 - C = SiC diode<br>3 - Current rating (10 = 10 A)<br>4 - E = single diode<br>5 - Package TO-220<br>6 - Voltage rating: (07 = 650 V)<br>7 -  T = true 2 pin<br>8 - Environmental digit:<br>**----- End of picture text -----**<br>


- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-C10ET07T-M3|50/tube|1000||Antistatic plastic tubes|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96069||
|Part markinginformation|||www.vishay.com/doc?95391||
|SPICE model|||www.vishay.com/doc?96832||



Revision: 21-Sep-2022 

Document Number: 96721 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2022 

Document Number: 91000 

**1** 



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