# Silicon Carbide Schottky Diode, MPS (Merged PIN Schottky), Single, 650 V, 8 A, 23 nC, TO-220AC

![Product image](https://novapart.co/image/farnell:3534738/)

**URL**: https://novapart.co/products/VS-C08ET07T-M3/silicon-carbide-schottky-diode-mps-merged-pin
**SKU**: VS-C08ET07T-M3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.0100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (17-Jan-2022) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Average Forward Current | 8A |
| Total Capacitive Charge | 23nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3534738/)

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**----- Start of picture text -----**<br>
VS-C08ET07T-M3<br>www.vishay.com Vishay Semiconductors<br>ae a<br>650 V Power SiC Merged PIN Schottky Diode, 8 A<br>FEATURES<br>Base cathode<br>2 • Majority carrier diode using Schottky technology<br>2 on SiC wide band gap material<br>e RoHS<br>• Positive VF temperature coefficient for easy<br>paralleling<br>1 • Virtually no recovery tail and no switching losses<br>3 Cathode1 Anode3 • Temperature invariant switching behavior<br>  2L TO-220AC •<br>**----- End of picture text -----**<br>


- 175 °C maximum operating junction temperature 

- MPS structure for high ruggedness to forward current surge events 

## **LINKS TO ADDITIONAL RESOURCES** 

- Meets JESD 201 class 1A whisker test 

~~CE]~~ SPICE 3D Models Models Application Notes 

- Solder Bath temperature 275 °C maximum, 10 s per JESD 22-B106 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|8 A|
|VR|650 V|
|VFat IFat 150 °C|1.7 V|
|TJmax.|175 °C|
|IRat VRat 175 °C|5 μA|
|QC(VR= 400 V)|23 nC|
|Package|2L TO-220AC|
|Circuit configuration|Single|



## **DESCRIPTION / APPLICATIONS** 

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. 

Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. 

Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. 

## **MECHANICAL DATA** 

**Case:** 2L TO-220AC 

Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

**Mounting torque:** 10 in-lbs maximum 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CT~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CT~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CT~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CT~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C unless otherwise specified)<br>~~CT~~|
|---|---|---|---|---|
|**PARAMETER**<br>~~GG~~|**SYMBOL**<br>~~GG~~|**TEST CONDITIONS**<br>~~GG~~|**VALUES**<br>~~GG~~|**UNITS**<br>~~GG~~|
|Peak repetitive reverse voltage<br>~~GG~~|VRRM<br>~~GG~~|~~GG~~|650<br>~~GG~~|V<br>~~GG~~|
|Average rectified forward current<br>~~GG~~|IF(AV)<br>~~GG~~|TC= 126 °C (DC)<br>~~GG~~|8<br>~~GG~~|A<br>~~GG~~|
|DC blockingvoltage<br>~~GG~~|VDC<br>~~GG~~|~~GG~~|650<br>~~GG~~|V<br>~~GG~~|
|Repetitive peak surge current<br>~~a~~|IFRM|TC= 25 °C, f = 50 Hz, square wave, DC = 25 %|29.5|A|
|Non-repetitive peak forward surge current<br>~~Ef~~|IFSM<br>~~Ef~~|TC= 25 °C, tp= 10 ms, half sine wave<br>~~Ef~~|57<br>~~Ef~~||
|||TC= 110 °C, tp= 10 ms, half sine wave<br>~~Ef~~<br>~~a~~|49<br>~~Ef~~<br>~~a~~||
|Power dissipation|Ptot (1)|TC= 25 °C|54|W|
|||TC= 110 °C|23||
|I2t value|i2 t<br>d<br>|TC= 25 °C|16|A2s|
|||TC= 110 °C<br>~~ee~~|12<br>~~ee~~||
|Operatingjunction and storage temperatures<br>~~a~~|TJ (2), TStg||-55 to +175|°C|



**Notes** 

> (1) Based on maximum Rth 

> (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA 

Revision: 16-Apr-2021 

Document Number: 96718 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-C08ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

|**ELECTRICAL SPECIFICATIONS**(TJ=|**ELECTRICAL SPECIFICATIONS**(TJ=|25 °C unless otherwise specified)|25 °C unless otherwise specified)|25 °C unless otherwise specified)|25 °C unless otherwise specified)|25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Forward voltage|VF|IF= 8 A|-|1.50|1.80|V|
|||IF= 8 A, TJ= 150 °C|-|1.7|2.1||
|||IF= 8 A, TJ= 175 °C|-|1.8|-||
|Reverse leakage current|IR|VR= VRrated|-|-|45|μA|
|||VR= VRrated, TJ= 150 °C|-|-|100||
|||VR= VRrated, TJ= 175 °C|-|5|-||
|Total capacitance|C|VR= 1 V, f = 1 MHz|-|355|-|pF|
|||VR= 400 V, f = 1 MHz|-|37|-||
|Total capacitive charge|QC|VR= 400 V, f = 1 MHz|-|23|-|nC|



|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Thermal resistance, junction-to-case|RthJC||-|2|2.8|°C/W|
|Markingdevice|||C08ET07T||||



**==> picture [210 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 10000<br>14<br>12 T J  = 25 °C<br>1000<br>10 T J = -55 °C<br>TJ = 125 °C<br>8 T J = 150 °C<br>TJ = 175 °C<br>6<br>100<br>4<br>2<br>0 10<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br>Axis Title<br>10 10000<br>1<br>1000<br>0.1 TJ = 175 °C<br>TJ = 150  ° C 100<br>0.01 TJ = 125 °C<br>TTJJ = 25 °C= -55 °C<br>0.001 10<br>0 100 200 300 400 500 600 700<br>VR - Reverse Voltage (V)<br> - Instantaneous Forward Current (A)IF<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

**==> picture [209 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10000<br>1000<br>100<br>100<br>TJ = 25 °C<br>f = 1.0 MHz<br>10 10<br>0.1 1 10 100 1000<br>VR - Reverse Voltage (V)<br>Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage<br>Axis Title<br>1000 10000<br>1000<br>TJ = 25 °C<br>100<br>T J  = 110 °C<br>100<br>10 10<br>0.0001 0.001 0.01<br>tp (s)<br>C - Junction Capacitance (pF)T<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) 

Revision: 16-Apr-2021 

Document Number: 96718 

**2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [505 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
VS-C08ET07T-M3<br>www.vishay.com Vishay Semiconductors<br>ae a<br>Axis Title<br>10 10000<br>1 1000<br>=a See eae<br>D = 0.5<br>0.1 D = 0.2 100<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>D = 0.01<br>DC<br>0.01 fT LU EES | LEE oT ELT EET | ET 10<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1 - Rectangular Pulse Duration (s)<br>1st line 2nd line<br> - Thermal Impedance<br>thJC Junction to Case (°C/W)<br>Z<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Thermal Impedance ZthJC Characteristics 

**==> picture [456 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
175 10000 9<br>ee 8 ae<br>150<br>7<br>125 eeeP| | ON 1000 6 aTEEa  ETTa<br>5<br>100 P| | pf [ttt]<br>4<br>SEEMS<br>75 aa 100 3 yt |<br>2 Tf = 1.0 MHzJ = 25 °C<br>50 Po | fFaA| | [x | | |<br>1<br>25 Po 10 0 |petre4+ | lcdt bee<br>0 2 4 6 8 10 0 100 200 300 400 500 600 700<br>IF(AV) - Average Forward Output Current (A) Reverse Voltage (V)<br>Fig. 6 - Maximum Allowable Case Temperature vs.  Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage<br>Average Forward Current<br>Axis Title Axis Title<br>80 10000 35<br>70<br>Sn 30 TT<br>60 PN LLL<br>| tt 25 Py oT | Uf<br>1000<br>50 R thJC typ.<br>20 oan<br>40 SOR Oe<br>15<br>30 SN a<br>RthJC max. 100<br>10 TJ = 25 °C<br>20 KX PY f = 1.0 MHz<br>10 Nee 5 |<br>0 iN 10 0 LaeAmbafeu<br>25 50 75 100 125 150 175 0 100 200 300 400 500 600 700<br>Case Temperature (°C) Reverse Voltage (V)<br>Fig. 7 - Forward Power Loss Characteristics Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage<br>(µJ)<br>line Energy<br>1st line 2nd line 2nd Capacitive<br>Allowable Case Temperature (°C)<br>(nC)<br>line<br>Charge<br>1st line 2nd line 2nd<br>Capacitive<br>Allowable Input Power (W)<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage 

Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage 

Revision: 16-Apr-2021 

Document Number: 96718 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-C08ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

**==> picture [391 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
Device code VS- C 08 E T 07 T -M3<br>1 2 3 4 5 6 7 8<br>1 - Vishay Semiconductors product<br>2 - C = SiC diode<br>3 - Current rating (08 = 8 A)<br>4 - E = single diode<br>5 - Package TO-220<br>6 - Voltage rating: (07 = 650 V)<br>7 -  T = true 2 pin<br>8 - Environmental digit:<br>-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free<br>**----- End of picture text -----**<br>


|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-C08ET07T-M3|50/tube|1000||Antistatic plastic tubes|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96069||
|Part markinginformation|||www.vishay.com/doc?95391||
|SPICE model|||www.vishay.com/doc?96831||



Revision: 16-Apr-2021 

Document Number: 96718 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2021 

Document Number: 91000 

**1** 



## Links

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- [Supplier page](https://es.farnell.com/vishay/vs-c08et07t-m3/silicon-carbide-schottky-diode/dp/3534738)
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