# Standard Recovery Diode, 1.2 kV, 90 A, Single, 1.38 V, 480 ns, 850 A ![Product image](https://novapart.co/image/farnell:2989396/) **URL**: https://novapart.co/products/VS-90APF12L-M3/standard-recovery-diode-12-kv-90-a-single-138-v **SKU**: VS-90APF12L-M3 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes **Price**: €5.3200 **Stock**: 10+ **Lead Time**: 127 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):90A; Diode Configuration:Single; Forward Voltage VF Max:1.38V; Reverse Recovery Time trr Max:480ns; Forward Surge ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (04-Feb-2026) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Diode Case Style | TO-247AD | | Diode Configuration | Single | | Forward Voltage Max | 1.38V | | Forward Surge Current | 850A | | Reverse Recovery Time | 480ns | | Average Forward Current | 90A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 1.2kV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2989396/) ## **VS-90EPF12L-M3, VS-90APF12L-M3** www.vishay.com ## Vishay Semiconductors ## **Fast Soft Recovery Rectifier Diode, 90 A** ## **FEATURES** - Glass passivated pellet chip junction **==> picture [191 x 47] intentionally omitted <==** **----- Start of picture text -----**
2
1 1
2
3 3
TO-247AD 2L TO-247AD 3L
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Base cathode Base cathode
2 2
1 3 1 3
Cathode Anode Anode Anode
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VS-90EPF12L-M3 VS-90APF12L-M3
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## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|90 A| |VR|1200 V| |VFat IF|1.38 V| |IFSM|1000 A| |trr|90 ns| |TJmax.|150 °C| |Package|TO-247AD 2L, TO-247AD 3L| |Circuit configuration|Single| |Snap factor|0.5| - Low forward voltage drop and short reverse recovery time - Designed and qualified according to JEDEC[®] -JESD 47 - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. ## **DESCRIPTION** The VS-90EPF12L-M3, VS-90APF12L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |VRRM||1200|V| |IF(AV)|Sinusoidal waveform|90|A| |IFSM||100|| |trr|1 A, - 100 A/μs|90|ns| |VF|40 A, TJ= 25 °C|1.2|V| |TJ||-40 to +150|°C| ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---| |**PART NUMBER**|**VRRM, MAXIMUM PEAK**
**REVERSE VOLTAGE**
**V**|**VRSM, MAXIMUM NON-REPETITIVE**
**PEAK REVERSE VOLTAGE**
**V**|**IRRM**
**AT 150 °C**
**mA**| |VS-90EPF12L-M3|1200|1300|17| |VS-90APF12L-M3|1200|1300|17| Revision: 06-Jul-2018 Document Number: 95654 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-90EPF12L-M3, VS-90APF12L-M3** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum average forward current|IF(AV)|TC= 106 °C, 180° conduction half sine wave|90|A| |Maximum peak one cycle
non-repetitive surge current|IFSM|10 ms sine pulse, rated VRRMapplied|850|| |||10 ms sine pulse, no voltage reapplied|1000|| |Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied|3610|A2s| |||10 ms sine pulse, no voltage reapplied|5100|| |Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied|51 000|A2s| ## **ELECTRICAL SPECIFICATIONS** |**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**| |Maximum forward voltage drop|VFM|90 A, TJ= 25 °C||1.38|V| |Forward slope resistance|rt|TJ= 150 °C||4.03|m| |Threshold voltage|VF(TO)|||0.87|V| |Maximum reverse leakage current|IRM|TJ= 25 °C|VR= Rated VRRM|0.1|mA| |||TJ= 150 °C||17|| ## **RECOVERY CHARACTERISTICS** |**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|IFM
trr
dir
dt
IRM(REC)
Qrr
t| |Reverse recovery time|trr|IFat 80 Apk
25 A/μs
25 °C|480|ns|| |Reverse recovery current|Irr||7.1|A|| |Reverse recovery charge|Qrr||2.1|μC|| |Snap factor|S||0.5||| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum junction and storage
temperature range||TJ, TStg||-40 to +150|°C| |Maximum thermal resistance,
junction to case||RthJC|DC operation|0.2|°C/W| |Maximum thermal resistance,
junction to ambient||RthJA||40|| |Typical thermal resistance,
case to heatsink||RthCS|Mounting surface, smooth and greased|0.25|| |Approximate weight||||6|g| |||||0.21|oz.| |Mounting torque|minimum|||6 (5)|kgf · cm
(lbf · in)| ||maximum|||12 (10)|| |Marking device|||Case style TO-247AD 2L|90EPF12L|| ||||Case style TO-247AD 3L|90APF12L|| Revision: 06-Jul-2018 Document Number: 95654 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [506 x 235] intentionally omitted <==** **----- Start of picture text -----**
VS-90EPF12L-M3, VS-90APF12L-M3
www.vishay.com Vishay Semiconductors
“wv a
150 220
RthJC (DC) = 0.2 °C/W 200 180°
140 120°
180 90° DC
130 RR |) = 160 60° I f
Conduction 30°
140
angle
120 ENN Ne 120 T f
XX, a
110 PIV 100 RMS limit /SA
AAN 80 Y A
100 30° VIN NNIS 60 $e Conduction angle
60°
90° 40
90 120° 20 TJ = 150 °C
180°
80 amis | 0 F oo
0 20 40 60 80 100 0 30 60 90 120 150
Average On-state Current (A) Average On-state Current (A)
C)
°
Max. Average On-state Power Loss (W)
Maximum Allowable Case Temperature (
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Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics **==> picture [193 x 170] intentionally omitted <==** **----- Start of picture text -----**
150
RthJC (DC) = 0.2 °C/WthJC (DC) = 0.2 °C/W (DC) = 0.2 °C/W
140
130 ANN Conduction
angle
120 P AWAAIN
110 VA ST
30°
60°
100 -\ NWN
V 90° ay
90 eeee
120°
180° DC°
80 Ty Trt, fo) fo)
0 20 40 60 80 100 120 140 160
Average On-state Current (A)
C)
°
Maximum Allowable Case Temperature (
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**==> picture [460 x 375] intentionally omitted <==** **----- Start of picture text -----**
550
150 At any rated load condition and with
RthJC (DC) = 0.2 °C/WthJC (DC) = 0.2 °C/W (DC) = 0.2 °C/W 500 rated V RRM applied following surge.
140 450 at 60 Hz 0.0083 sInitial TJ = 150 °C
at 50 Hz 0.0100 s
130 ANN Conduction 400 AEE
angle
350
120 P AWAAIN Nes
300
110 VA ST NG
30°
60° 250
100 -\ NWN 200 SSC CT
V 90° ay CCS
90 eeee 150 Eo
120°
180° DC° 100 LES
80 Ty Trt, fo) fo) 1 +PSS_CraeL_ 10 100
0 20 40 60 80 100 120 140 160
Number of Equal Amplitude Half Cycle
Average On-state Current (A) Current Pulses (N)
Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current
1100
180
180° 1000 Maximum non-repetitive surge current
160 120° versus pulse train duration.
90° TILT 900 i Initial T J = 150 °C
140 60° 800 No voltage reapplied
30° Rated VRRM reapplied
120 700
100 600
RMS limit
80 | | T LAYSF 500 PNNeee ll
60 | ALiZA Conduction angle 400 HTNON
300
40 | OFF| Jf H L TINTt SS TT
20 TJ = 150 °C 200
100
0 A) | | 0 PCIE CCIE Lh
0 20 40 60 80 100 0.01 0.1 1 10
Average On-state Current (A) Pulse Train Duration (s)
°
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (
Peak Half Sine Wave Forward Current (A)
Max. Average On-state Power Loss (W)
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Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 3 - Forward Power Loss Characteristics Revision: 06-Jul-2018 Document Number: 95654 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-90EPF12L-M3, VS-90APF12L-M3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**
1000
100
T J = 25 °C
10 T J = 150 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
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Fig. 7 - Forward Voltage Drop Characteristics
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800 12 000
700 T J = 25 °C 10 000 T J = 25 °C IFM = 80 A
600
8000
500
IFM = 80 A IFM = 40 A
400 6000
300 I FM = 20 A IFM = 40 A 4000 IFM = 20 A
200 IFM = 10 A IFM = 10 A
2000
100 IFM = 1 A IFM = 1 A
0 0
0 40 80 120 160 200 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °CJ = 25 °C = 25 °C
1800 25 000
1600 T J = 150 °C TJ = 150 °C I FM = 80 A
1400 20 000
1200 I FM = 80 A
1000 I I FMFM = 40 A = 20 A 15 000 I FM = 40 A
800 IIFMFM = 10 A = 1 A 10 000 I FM = 20 A
600
IFM = 10 A
400
5000
200 IFM = 1 A
0 0
0 40 80 120 160 200 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
- Typical Reverse - Typical Reverse
trr Recovery Time (ns) Qrr Recovery Charge (nC)
- Typical Reverse trr Recovery Time (ns) Q - Typical Reverse rr Recovery Charge (nC)
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Fig. 10 - Recovery Charge Characteristics, TJ = 25 °CJ = 25 °C = 25 °C Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 06-Jul-2018 Document Number: 95654 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-90EPF12L-M3, VS-90APF12L-M3** **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
www.vishay.com
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## Vishay Semiconductors **==> picture [470 x 165] intentionally omitted <==** **----- Start of picture text -----**
45 60
40 T J = 25 °C I FM = 80 A TJ = 150 °C IFM = 80 A
50
35
30 40 I FM = 40 A
25 I FM = 40 A 30 I FM = 20 A
20 I FM = 20 A
15 20 I FM = 10 A
IFM = 10 A
10
10
5 I FM = 1 A IFM = 1 A
0 0
0 40 80 120 160 200 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
- Typical Reverse - Typical Reverse
Irr Recovery Current (A) Irr Recovery Current (A)
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Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C **==> picture [406 x 168] intentionally omitted <==** **----- Start of picture text -----**
1
0.5
0.1
0.33
0.25
0.17 0.08
Single pulse
0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
- Transient Thermal Impedance (°C/W)
thJC
Z
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Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 06-Jul-2018 Document Number: 95654 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-90EPF12L-M3, VS-90APF12L-M3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**|||**90**
**A**
**P**|**F**|**12**|**L**||**-M3**||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |||1|||3
2
4|5|6|7||8||| ||**1**||-||Vishay Semiconductors product|||||||| ||**2**||-||Current rating (90 = 90|A)||||||| ||**3**||-||Circuit confguration:|||||||| ||||||E = single, 2 pins|||||||| ||||||A = single, 3 pins|||||||| ||**4**||-||Package:|||||||| ||||||P = TO-247AD|||||||| ||**5**||-||Type of silicon:|||||||| ||||||F = fast recovery|||||||| ||**6**||-||Voltage code x 100 = VRRM|||||12 = 1200 V||| |||||||||||||| ||**7**||-||L = long lead|||||||| |||||||||||||| ||**8**||-||Environmental digit:|||||||| ||||||-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free|||||||| |**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)| |---|---|---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER TUBES**||**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**| |VS-90EPF12L-M3||25|500||Antistatic plastic tubes| |VS-90APF12L-M3||25|500||Antistatic plastic tubes| ||||||| |||**LINKS TO RELATED DOCUMENTS**|||| |Dimensions||TO-247AD 2L||www.vishay.com/doc?95536|| |||TO-247AD 3L||www.vishay.com/doc?95626|| |Part marking information||TO-247AD 2L||www.vishay.com/doc?95648|| |||TO-247AD 3L||www.vishay.com/doc?95007|| Revision: 06-Jul-2018 Document Number: 95654 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **TO-247AD 2L** ## **DIMENSIONS** in millimeters and inches **==> picture [410 x 318] intentionally omitted <==** **----- Start of picture text -----**
(3) A A
B E (6) F P (Datum B)
S A2 Ø K M D B M
(2) R/2 A F P1
D2
Q
2 x R
D D1 (4)
(2)
1, 2 3 D 4
Thermal pad
(5) L1
C (4)
L See view B A E1
0.01 M D B M
View A - A
C
2 x b2
2 x b 2 x e A1
0.10 M C A M
Plating (b1, b3) Base metal
D D
(c) c1 C C
(b, b2)
(4)
Section C - C, D - D View B
**----- End of picture text -----**
|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**
3
4||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**|| |A|4.65|5.31|0.183|0.209|||E|15.29|15.87|0.602|0.625|3| |A1|2.21|2.59|0.087|0.102|||E1|13.46|-|0.53|-|| |A2|1.50|2.49|0.059|0.098|||e|5.46 BSC||0.215 BSC||| |b|0.99|1.40|0.039|0.055|||Ø K|0.254||0.010||| |b1|0.99|1.35|0.039|0.053|||L|19.81|20.32|0.780|0.800|| |b2|1.65|2.39|0.065|0.094|||L1|3.71|4.29|0.146|0.169|| |b3|1.65|2.34|0.065|0.092|||Ø P|3.56|3.66|0.14|0.144|| |c|0.38|0.89|0.015|0.035|||Ø P1|-|6.98|-|0.275|| |c1|0.38|0.84|0.015|0.033|||Q|5.31|5.69|0.209|0.224|| |D|19.71|20.70|0.776|0.815|||R|4.52|5.49|0.178|0.216|| |D1|13.08|-|0.515|-|||S|5.51 BSC||0.217 BSC||| |D2|0.51|1.35|0.020|0.053||||||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TO-247AD 3L** ## **DIMENSIONS** in millimeters and inches ||(2)
(2) R/

2 x R
3
2 x
(5) L1
Q|(2)
(2) R/

2 x R
3
2 x
(5) L1
Q|(2)
(2) R/

2 x R
3
2 x
(5) L1
Q|B||||||D
A
A2
A
A
A1
C
T
D E
E
C
C
View B|D
A
A2
A
A
A1
C
T
D E
E
C
C
View B|A
(6)ΦP|A
(6)ΦP|A
(6)ΦP|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||2||||||||Ø K
B
D
M
M
hermal pad
D2|B
D

M||||||| ||||||||||||||||4||D||| ||||||1
2|3|||||||||||||| ||||||
b4||||||||||||||| ||||||||||||||||(4)
E1||||| |||||x b
b2
C|||||||||||||||| ||||||||||||||||||||| ||||||(b1, b3, b5)||||||||||||||| ||||0.10
M|A
C
M|||||||||||||||| ||||||||||||||||||||| ||(
Plating||||||||||||||||||| |||||c)|(b b2 b4)||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| |**SYMBOL**|**MILLIMETERS**|||||**INCHES**|||**NOTES**
3
4||**SYMBOL**|**MILLIMETERS**||||**INCHES**|||**NOTES**| ||**MIN.**|||**MAX.**||**MIN.**||**MAX.**||||**MIN.**||**MAX.**||**MIN.**||**MAX.**|| |A|4.65|||5.31||0.183||0.209|||D2|0.51||1.30||0.020||0.051|| |A1|2.21|||2.59||0.087||0.102|||E|15.29||15.87||0.602||0.625|3| |A2|1.50|||2.49||0.059||0.098|||E1|13.46||-||0.53||-|| |b|0.99|||1.40||0.039||0.055|||e|5.46 BSC||||0.215 BSC|||| |b1|0.99|||1.35||0.039||0.053|||Ø K|2.54||||0.010|||| |b2|1.65|||2.39||0.065||0.094|||L|19.81||20.32||0.780||0.800|| |b3|1.65|||2.34||0.065||0.092|||L1|3.71||4.29||0.146||0.169|| |b4|2.59|||3.43||0.102||0.135|||Ø P|3.56||3.66||0.14||0.144|| |b5|2.59|||3.38||0.102||0.133|||Ø P1|-||6.98||-||0.275|| |c|0.38|||0.89||0.015||0.035|||Q|5.31||5.69||0.209||0.224|| |c1|0.38|||0.84||0.015||0.033|||R|4.52||5.49||0.178||0.216|| |D|19.71|||20.70||0.776||0.815|||S|5.51 BSC||||0.217 BSC|||| |D1|13.08|||-||0.515||-|||||||||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95626 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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