# Standard Recovery Diode, 1.2 kV, 60 A, Single, 1.4 V, 70 ns, 700 A ![Product image](https://novapart.co/image/farnell:9101594/) **URL**: https://novapart.co/products/VS-60EPF12PBF/standard-recovery-diode-12-kv-60-a-single-14-v-70 **SKU**: VS-60EPF12PBF **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes **Price**: €5.0800 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2Pins | | Product Range | VS-60 | | Diode Case Style | TO-247AC | | Diode Configuration | Single | | Forward Voltage Max | 1.4V | | Forward Surge Current | 700A | | Reverse Recovery Time | 70ns | | Average Forward Current | 60A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 1.2kV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9101594/) ## **VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series** www.vishay.com Vishay Semiconductors ## **Fast Soft Recovery Rectifier Diode, 60 A** ## **FEATURES** - Glass passivated pellet chip junction - 150 °C max. operating junction temperature **==> picture [188 x 150] intentionally omitted <==** **----- Start of picture text -----**
2
3 [3]
1 1 [2]
TO-247AC modified TO-247AC
Base Base
cathode cathode
+
2 2
1 3 1 3
Cathode Anode Anode - - Anode
VS-60EPF1... VS-60APF1...
**----- End of picture text -----**
- Low forward voltage drop and short reverse recovery time - Designed and qualified according to JEDEC[®] -JESD 47 - • Material categorization: Available for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. ## **DESCRIPTION** ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---| |Package|TO-247AC modified (2 pins), TO-247AC| |IF(AV)|60 A| |VR|1000 V, 1200 V| |VFat IF|1.4 V| |IFSM|830 A| |trr|95 ns| |TJmax.|150 °C| |Diode variation|Single die| |Snap factor|0.6| The VS-60EPF1... and VS-60APF1... soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**| |VRRM||1000 to 1200|V| |IF(AV)|Sinusoidal waveform|60|A| |IFSM||830|| |trr|1 A, - 100 A/μs|95|ns| |VF|30 A, TJ= 25 °C|1.2|V| |TJ|Range|-40 to +150|°C| ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---| |**PART NUMBER**|**VRRM, MAXIMUM PEAK**
**REVERSE VOLTAGE**
**V**|**VRSM, MAXIMUM NON-REPETITIVE**
**PEAK REVERSE VOLTAGE**
**V**|**IRRM**
**AT 150 °C**
**mA**| |VS-60EPF10PbF, VS-60APF10PbF
VS-60EPF10-M3, VS-60APF10-M3|1000|1100|12| |VS-60EPF12PbF, VS-60APF12PbF
VS-60EPF12-M3, VS-60APF12-M3|1200|1300|| **1** Revision: 11-Feb-16 Document Number: 93721 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series** Vishay Semiconductors ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum average forward current|IF(AV)|TC= 103 °C, 180° conduction half sine wave|60|A| |Maximum peak one cycle
non-repetitive surge current|IFSM|10 ms sine pulse, rated VRRMapplied|700|| |||10 ms sine pulse, no voltage reapplied|830|| |Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied|2450|A2s| |||10 ms sine pulse, no voltage reapplied|3460|| |Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied|34 600|A2s| ## **ELECTRICAL SPECIFICATIONS** |**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**| |Maximum forward voltage drop|VFM|60 A, TJ= 25 °C||1.4|V| |Forward slope resistance|rt|TJ= 150 °C||4.6|m| |Threshold voltage|VF(TO)|||0.9|V| |Maximum reverse leakage current|IRM|TJ= 25 °C|VR= Rated VRRM|0.1|mA| |||TJ= 150 °C||12|| ## **RECOVERY CHARACTERISTICS** |**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|IFM
trr
dir
dt
IRM(REC)
Qrr
t| |Reverse recovery time|trr|IFat 60 Apk
25 A/μs
25 °C|480|ns|| |Reverse recovery current|Irr||8|A|| |Reverse recovery charge|Qrr||2.7|μC|| |Snap factor|S||0.6||| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum junction and storage
temperature range||TJ, TStg||-40 to +150|°C| |Maximum thermal resistance,
junction to case||RthJC|DC operation|0.4|°C/W| |Maximum thermal resistance,
junction to ambient||RthJA||40|| |Typical thermal resistance,
case to heatsink||RthCS|Mounting surface, smooth and greased|0.2|| |Approximate weight||||6|g| |||||0.21|oz.| |Mounting torque|minimum|||6 (5)|kgf · cm
(Ibf · in)| ||maximum|||12 (10)|| |Marking device|||Case style TO-247AC modified|60EPF10|| |||||60EPF12|| ||||Case style TO-247AC|60APF10|| |||||60APF12|| Revision: 11-Feb-16 Document Number: 93721 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com **==> picture [213 x 367] intentionally omitted <==** **----- Start of picture text -----**
150
60.PF.. Series
140 R thJC (DC) = 0.4 °C/W
130
Ø
Conduction angle
120
110
100 60 ° 120°
30° 90° 180°
90
0 10 20 30 40 50 60 70
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
60.PF.. Series
140 RthJC (DC) = 0.4 °C/W
130
Ø
Conduction period
120
110
DC
30°
100 60° 120°
90° 180°
90
0 20 40 60 80 100
Average Forward Current (A)
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
**----- End of picture text -----**
Fig. 2 - Current Rating Characteristics **==> picture [212 x 180] intentionally omitted <==** **----- Start of picture text -----**
100
180°
90 120°
90°
80
60°
70 30°
60 RMS limit
50
40
Ø
30 Conduction angle
20
60.PF.. Series
10 TJ = 150 °C
0
0 10 20 30 40 50 60 70
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Power Loss (W)
Maximum Average Forward
**----- End of picture text -----**
## Vishay Semiconductors **==> picture [205 x 589] intentionally omitted <==** **----- Start of picture text -----**
140
DC
180°
120
120°
90°
100 60°
30°
80
60
RMS limit
Ø
40 Conduction period
20 60.PF.. Series
TJ = 150 °C
0
0 20 40 60 80 100
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
800
At any rated load condition and with
rated VRRM applied following surge.
700 Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
600
500
400
60.PF.. Series
300
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
900
Maximum non-repetitive surge current
versus pulse train duration.
800
Initial TJ = 150 °C
700 No voltage reapplied
Rated VRRM reapplied
600
500
400 60.PF.. Series
300
0.01 0.1 1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Power Loss (W)
Maximum Average Forward
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
**----- End of picture text -----**
Revision: 11-Feb-16 Document Number: 93721 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**
1000
60.PF.. Series
100
T J = 25 °C
10 T J = 150 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
**----- End of picture text -----**
**==> picture [162 x 9] intentionally omitted <==** **----- Start of picture text -----**
Fig. 7 - Forward Voltage Drop Characteristics
**----- End of picture text -----**
**==> picture [218 x 180] intentionally omitted <==** **----- Start of picture text -----**
600
60.PF.. Series
500 T J = 25 °C
400 I FM = 60 A
300 I FM = 30 A
200 I FM = 10 A
IFM = 5 A
100 IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
- Typical Reverse
trr Recovery Time (ns)
**----- End of picture text -----**
**==> picture [219 x 180] intentionally omitted <==** **----- Start of picture text -----**
1200
60.PF.. Series
1000 T J = 150 °C
800
I FM = 60 A
600
I FM = 30 A
400
IFM = 10 A
200 IFM = 1 A IFM = 5 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
- Typical Reverse
trr Recovery Time (ns)
**----- End of picture text -----**
**==> picture [225 x 382] intentionally omitted <==** **----- Start of picture text -----**
12 000
60.PF.. Series I FM = 60 A
10 000 T J = 25 °C
8000
6000 IFM = 30 A
4000 I FM = 10 A
2000 I FM = 5 A
IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
25 000
60.PF.. Series
20 000 TJ = 150 °C I FM = 60 A
15 000
I FM = 30 A
10 000
I FM = 10 A
5000
IFM = 5 A
IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
- Typical Reverse
rr
Q Recovery Charge (µC)
- Typical Reverse
rr
Q Recovery Charge (µC)
**----- End of picture text -----**
Revision: 11-Feb-16 Document Number: 93721 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com **==> picture [213 x 164] intentionally omitted <==** **----- Start of picture text -----**
45
60.PF.. Series
40 TJ = 25 °C I FM = 60 A
35
30 I FM = 30 A
25
20 I FM = 10 A
15
IFM = 5 A
10
5 I FM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
- Typical Reverse
Irr Recovery Current (A)
**----- End of picture text -----**
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ## Vishay Semiconductors **==> picture [212 x 165] intentionally omitted <==** **----- Start of picture text -----**
60
60.PF.. Series I FM = 60 A
50 T J = 150 °C
IFM = 30 A
40
IFM = 10 A
30
20 I FM = 5 A
10 IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
- Typical Reverse
Irr Recovery Current (A)
**----- End of picture text -----**
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C **==> picture [408 x 179] intentionally omitted <==** **----- Start of picture text -----**
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
0.01 Single pulse D = 0.17
D = 0.08 60.PF.. Series
0.001
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
- Transient Thermal Impedance (°C/W)
thJC
Z
**----- End of picture text -----**
Revision: 11-Feb-16 Document Number: 93721 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**60**
**E**
**P**
**F**|**60**
**E**
**P**
**F**|**12**|**PbF**|**PbF**||| |---|---|---|---|---|---|---|---|---|---|---| |||1||5
3
2
4||6||7||| ||**1**||-|Vishay Semiconductors product||||||| ||**2**||-|Current rating (60 = 60|A)|||||| ||**3**||-|Circuit configuration:||||||| |||||E = single diode||||||| |||||A = single diode, 3 pins||||||| ||**4**||-|Package:||||||| |||||P = TO-247AC/TO-247AC modified||||||| ||**5**||-|Type of silicon:||||||| |||||F = fast recovery||||||| ||**6**||-|Voltage code x 100 = VRRM||||10 =
12 =|1000 V
1200 V|| ||**7**||-|Environmental digit:||||||| |||||PbF = lead (Pb)-free and||RoHS-compliant||||| |||||-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free||||||| |**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)| |---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER T/R**|**MINIMUM ORDER QUANTITY**|**PACKAGING DESCRIPTION**| |VS-60EPF10PbF|25|500|Antistatic plastic tubes| |VS-60EPF10-M3|25|500|Antistatic plastic tubes| |VS-60APF10PbF|25|500|Antistatic plastic tubes| |VS-60APF10-M3|25|500|Antistatic plastic tubes| |VS-60EPF12PbF|25|500|Antistatic plastic tubes| |VS-60EPF12-M3|25|500|Antistatic plastic tubes| |VS-60APF12PbF|25|500|Antistatic plastic tubes| |VS-60APF12-M3|25|500|Antistatic plastic tubes| ||**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|| |---|---|---|---| |Dimensions|TO-247AC modified||www.vishay.com/doc?95541| ||TO-247AC||www.vishay.com/doc?95542| |Part marking information|TO-247AC modified PbF||www.vishay.com/doc?95255| ||TO-247AC modified -M3||www.vishay.com/doc?95442| ||TO-247AC PbF||www.vishay.com/doc?95226| ||TO-247AC -M3||www.vishay.com/doc?95007| Revision: 11-Feb-16 Document Number: 93721 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** www.vishay.com Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** ## **TO-247 - 50 mils L/F modified** ## **DIMENSIONS** in millimeters and inches ||(2)
(2) R/2

2 x R
3
2 x
(5) L1
Q
(c
Plating
0.10
M|(2)
(2) R/2

2 x R
3
2 x
(5) L1
Q
(c
Plating
0.10
M|(2)
(2) R/2

2 x R
3
2 x
(5) L1
Q
(c
Plating
0.10
M|(2)
(2) R/2

2 x R
3
2 x
(5) L1
Q
(c
Plating
0.10
M||E|E|E|E|E|D
A
A2
A
A
A1
C

D E
E
C
C
View B|D
A
A2
A
A
A1
C

D E
E
C
C
View B|A
(6) Ø P
Thermal pad
D2
Ø K
B
D
M
M|A
(6) Ø P|A
(6) Ø P|A
(6) Ø P|A
(6) Ø P|A
(6) Ø P|A
(6) Ø P|(Datum B)
Ø P1|(Datum B)
Ø P1|(Datum B)
Ø P1|(Datum B)
Ø P1|(Datum B)
Ø P1|(Datum B)
Ø P1|(Datum B)
Ø P1| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||(2)
(2) R/2

2 x R
3
2 x
(5) L1
Q|||
||N|||||||||
Ø K
|

M|
D|
B
M|||||||| |||||||||||||||||||||||||||| |||||||||||||||||||||4||||D||| |||||||1
2|3|||||||||||||||||||| |||||||
b4
||||||||||||||||||||| ||||||x b
b2
C|||||||||||||||||||||| |||||0.10
M|A
C
M|||||||||||||||||||||| |||||||||||||||||||||||||||| |||||||(b1, b3, b5)||||||||||||||||||||| ||||||)|(b b2 b4)||||||||||||||||||||| |||||||||||||||||||||||||||| |||||||||||||||||||||||||||| |||||||||||||||||||||||||||| |**SYMBOL**|**MILLIMETERS**||||||**INCHES**|||**NOTES**
3
4||**SYMBOL**|**MILLIMETERS**||||||||**INCHES**|||||**NOTES**| ||**MIN.**||||**MAX.**||**MIN.**||**MAX.**||||**MIN.**|||||**MAX.**|||**MIN.**||||**MAX.**|| |A|4.65||||5.31||0.183||0.209|||D2|0.51|||||1.35|||0.020||||0.053|| |A1|2.21||||2.59||0.087||0.102|||E|15.29|||||15.87|||0.602||||0.625|3| |A2|1.17||||1.37||0.046||0.054|||E1|13.46|||||-|||0.53||||-|| |b|0.99||||1.40||0.039||0.055|||e|5.46 BSC||||||||0.215 BSC|||||| |b1|0.99||||1.35||0.039||0.053|||Ø K|0.254||||||||0.010|||||| |b2|1.65||||2.39||0.065||0.094|||L|14.20|||||16.10|||0.559||||0.634|| |b3|1.65||||2.34||0.065||0.092|||L1|3.71|||||4.29|||0.146||||0.169|| |b4|2.59||||3.43||0.102||0.135|||N|7.62 BSC||||||||0.3|||||| |b5|2.59||||3.38||0.102||0.133|||Ø P|3.56|||||3.66|||0.14||||0.144|| |c|0.38||||0.89||0.015||0.035|||Ø P1|-|||||7.39|||-||||0.291|| |c1|0.38||||0.84||0.015||0.033|||Q|5.31|||||5.69|||0.209||||0.224|| |D|19.71||||20.70||0.776||0.815|||R|4.52|||||5.49|||0.178||||0.216|| |D1|13.08||||-||0.515||-|||S|5.51 BSC||||||||0.217 BSC|||||| **Notes** > (1) Dimensioning and tolerance per ASME Y14.5M-1994 - (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body - (4) Thermal pad contour optional with dimensions D1 and E1 - (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q Revision: 21-Apr-15 Document Number: 95541 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **TO-247 - 50 mils L/F** ## **DIMENSIONS** in millimeters and inches |||||B||||||D
A
A2
A
A
A1
C
T
D E
E
C
C
View B|D
A
A2
A
A
A1
C
T
D E
E
C
C
View B|A
(6)ΦP|A
(6)ΦP|A
(6)ΦP|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||(2)
(2) R/2
2 x R
3
2 x
(5) L1
Q|||||N||||||Ø K
B
D
M
M
hermal pad
D2|B
D

M||||||| ||||||||||||||||4||D||| ||||||1
2|3|||||||||||||| ||||||
b4||||||||||||||| ||||||||||||||||(4)
E1||||| |||||x b
b2
C|||||||||||||||| ||||||||||||||||||||| ||||0.10
M|A
C
M|||||||||||||||| ||||||||||||||||||||| ||(c
Plating||||(b1, b3, b5)||||||||||||||| |||||)|(b b2 b4)||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| |**SYMBOL**|**MILLIMETERS**|||||**INCHES**|||**NOTES**
3
4||**SYMBOL**|**MILLIMETERS**||||**INCHES**|||**NOTES**| ||**MIN.**|||**MAX.**||**MIN.**||**MAX.**||||**MIN.**||**MAX.**||**MIN.**||**MAX.**|| |A|4.65|||5.31||0.183||0.209|||D2|0.51||1.35||0.020||0.053|| |A1|2.21|||2.59||0.087||0.102|||E|15.29||15.87||0.602||0.625|3| |A2|1.17|||1.37||0.046||0.054|||E1|13.46||-||0.53||-|| |b|0.99|||1.40||0.039||0.055|||e|5.46 BSC||||0.215 BSC|||| |b1|0.99|||1.35||0.039||0.053|||Ø K|0.254||||0.010|||| |b2|1.65|||2.39||0.065||0.094|||L|14.20||16.10||0.559||0.634|| |b3|1.65|||2.34||0.065||0.092|||L1|3.71||4.29||0.146||0.169|| |b4|2.59|||3.43||0.102||0.135|||N|7.62 BSC||||0.3|||| |b5|2.59|||3.38||0.102||0.133|||Ø P|3.56||3.66||0.14||0.144|| |c|0.38|||0.89||0.015||0.035|||Ø P1|-||7.39||-||0.291|| |c1|0.38|||0.84||0.015||0.033|||Q|5.31||5.69||0.209||0.224|| |D|19.71|||20.70||0.776||0.815|||R|4.52||5.49||0.178||0.216|| |D1|13.08|||-||0.515||-|||S|5.51 BSC||||0.217 BSC|||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q Revision: 21-Apr-15 Document Number: 95542 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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