# Thyristor Diode Module, Single SCR, 600 V, 100 mA, 50 A, 80 A, TO-208AC

![Product image](https://novapart.co/image/farnell:9104739/)

**URL**: https://novapart.co/products/VS-50RIA60/thyristor-diode-module-single-scr-600-v-100-ma-50
**SKU**: VS-50RIA60
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €8.7700
**Stock**: 10+
**Lead Time**: 71 days (indicative)

## Description

SCR Module Type:Single SCR; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:100mA; Current It av:50A; On State RMS Current IT(rms):80A; Peak Non Rep Surge Current

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (08-Jul-2021) |
| No. Of Pins | - |
| Product Range | VS-50RIA |
| Scr Module Type | Single SCR |
| Thyristor Mounting | Stud Mount |
| On State Rms Current | 80A |
| Thyristor Case Style | TO-208AC |
| Average Forward Current | 50A |
| Gate Trigger Current Max | 100mA |
| Gate Trigger Voltage Max | 2.5V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 600V |
| Peak Repetitive Off State Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9104739/)

**VS-50RIA Series** 

www.vishay.com 

Vishay Semiconductors 

## **Medium Power Phase Control Thyristors (Stud Version), 50 A** 

## **FEATURES** 

- High current rating 

- Excellent dynamic characteristics 

- dV/dt = 1000 V/μs option 

- Superior surge capabilities 

- Standard package 

- Metric threads version available 

**TO-65 (TO-208AC)** 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IT(AV)|50 A|
|VDRM/VRRM|100 V, 200 V, 400 V, 600 V, 800 V,<br>1000 V, 1200 V|
|VTM|1.60 V|
|IGT|100 mA|
|TJ|-40 °C to 125 °C|
|Package|TO-65 (TO-208AC)|
|Circuit configuration|Single SCR|



- Types up to 1200 V VDRM/VRRM 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

- Phase control applications in converters 

- Lighting circuits 

- Battery charges 

- Regulated power supplies and temperature and speed control circuit 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|IT(AV)||50|A|
||TC|94|°C|
|IT(RMS)||80|A|
|ITSM|50 Hz|1430|A|
||60 Hz|1490||
|I2t|50 Hz|10.18|kA2s|
||60 Hz|9.30||
|VDRM/VRRM||100 to 1200|V|
|tq|Typical|110|μs|
|TJ||-40 to +125|°C|



## **ELECTRICAL SPECIFICATIONS** 

## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|---|
|**TYPE**<br>**NUMBER**|**VOLTAGE**<br>**CODE**|**VDRM/VRRM, MAXIMUM REPETITIVE**<br>**PEAK AND OFF-STATE VOLTAGE(1)**<br>**V**|**VRSM, MAXIMUM**<br>**NON-REPETITIVE PEAK VOLTAGE(2)**<br>**V**|**IDRM/IRRM MAXIMUM AT**<br>**TJ = TJ MAXIMUM**<br>**mA**|
|VS-50RIA|10|100|150|15|
||20|200|300||
||40|400|500||
||60|600|700||
||80|800|900||
||100|1000|1100||
||120|1200|1300||



## **Notes** 

> (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs 

> (2) For voltage pulses with tp  5 ms 

Revision: 21-Sep-17 

**1** 

Document Number: 93711 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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## Vishay Semiconductors 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**||||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**|
|Maximum average on-state current<br>at case temperature|IT(AV)|180° sinusoidal conduction|||50|A|
||||||94|°C|
|Maximum RMS on-state current|IT(RMS)||||80|A|
|Maximum peak, one-cycle<br>non-repetitive surge current|ITSM|t = 10 ms|No voltage<br>reapplied|Sinusoidal half wave,<br>initial TJ= TJmaximum|1430|A|
|||t = 8.3 ms|||1490||
|||t = 10 ms|100 % VRRM<br>reapplied||1200||
|||t = 8.3 ms|||1255||
|Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||10.18|kA2s|
|||t = 8.3 ms|||9.30||
|||t = 10 ms|100 % VRRM<br>reapplied||7.20||
|||t = 8.3 ms|||6.56||
|Maximum I2t for fusing|I2t|t = 0.1 to 10 ms, no voltage reapplied,<br>TJ= TJmaximum|||101.8|kA2s|
|Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.94|V|
|High level value of threshold voltage|VT(TO)2|(x IT(AV)< I < 20 xx IT(AV)), TJ= TJmaximum|||1.08||
|Low level value of on-state<br>slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||4.08|m|
|High level value of on-state<br>slope resistance|rt2|(x IT(AV)< I < 20 xx IT(AV)), TJ= TJmaximum|||3.34||
|Maximum on-state voltage|VTM|Ipk= 157 A, TJ= 25 °C|||1.60|V|
|Maximum holding current|IH|TJ= 25 °C, anode supply 22 V, resistive load,<br>initial IT= 2 A|||200|mA|
|Latching current|IL|Anode supply 6 V, resistive load|||400||



## **SWITCHING** 

|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|
|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum rate of<br>rise of turned-on current|VDRM 600 V|dI/dt|TC= 125 °C, VDM= Rated VDRM,<br>Gate pulse = 20 V, 15, tp= 6 μs, tr= 0.1 μs maximum<br>ITM= (2 x rated dI/dt) A|200|A/μs|
||VDRM 1600 V|||100||
|Typical delay time||td|TC= 25 °C, VDM= Rated VDRM, ITM= 10 A dc resistive circuit<br>Gate pulse = 10 V, 15source, tp= 20 μs|0.9|μs|
|Typical turn-off time||tq|TC= 125 °C, ITM= 50 A, reapplied dV/dt = 20 V/μs<br>dIr/dt = - 10 A/μs, VR= 50 V|110||



## **BLOCKING** 

|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum critical rate of rise of<br>off-state voltage|dV/dt|TJ= TJmaximum linear to 100 % rated VDRM|200|V/μs|
|||TJ= TJmaximum linear to 67 % rated VDRM|500(1)||



## **Note** 

(1)   Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90 

Revision: 21-Sep-17 

Document Number: 93711 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-50RIA Series** 

**==> picture [59 x 48] intentionally omitted <==**

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## Vishay Semiconductors 

## **TRIGGERING** 

|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum peak gate power|PGM|TJ= TJmaximum, tp 5 ms||10|W|
|Maximum average gate power|PG(AV)|||2.5||
|Maximum peak positive gate current|IGM|||2.5|A|
|Maximum peak positive gate voltage|+VGM|||20|V|
|Maximum peak negative gate voltage|-VGM|||10||
|DC gate current required to trigger|IGT|TJ= - 40 °C|Maximum required gate trigger<br>current/voltage are the lowest<br>value which will trigger all units 6 V<br>anode to cathode applied|250|mA|
|||TJ= 25 °C||100||
|||TJ= 125 °C||50||
|DC gate voltage required to trigger|VGT|TJ= - 40 °C||3.5|V|
|||TJ= 25 °C||2.5||
|DC gate current not to trigger|IGD|TJ= TJmaximum,<br>VDRM= Rated voltage|Maximum gate current/voltage<br>not to trigger is the maximum<br>value which will not trigger any<br>unit with rated VDRManode to<br>cathode applied|5.0|mA|
|DC gate voltage not to trigger|VGD|TJ= TJmaximum||0.2|V|



|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum operating junction and<br>storage temperature range|TJ, TStg||-40 to +125|°C|
|Maximum thermal resistance,<br>junction to case|RthJC|DC operation|0.35|K/W|
|Maximum thermal resistance,<br>case to heat sink|RthCS|Mounting surface, smooth, flat and greased|0.25||
|Allowable mounting torque||Non-lubricated threads|3.4+ 0 - 10 %<br>(30)|N · m<br>(lbf · in)|
|||Lubricated threads|2.3+ 0 - 10 %<br>(20)||
|Approximate weight|||28|g|
||||1.0|oz.|
|Case style||See dimensions - link at the end of datasheet|TO-65 (TO-208AC)||



##  **RthJC CONDUCTION** 

|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|
|---|---|---|---|---|
|**CONDUCTION ANGLE**|**SINUSOIDAL CONDUCTION**|**RECTANGULAR CONDUCTION**|**TEST CONDITIONS**|**UNITS**|
|180°|0.078|0.057|TJ= TJmaximum|K/W|
|120°|0.094|0.098|||
|90°|0.120|0.130|||
|60°|0.176|0.183|||
|30°|0.294|0.296|||



## **Note** 

- The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 

Revision: 21-Sep-17 

Document Number: 93711 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-50RIA Series** 

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## Vishay Semiconductors 

**==> picture [434 x 590] intentionally omitted <==**

**----- Start of picture text -----**<br>
130 100<br>50RIA Series DC<br>R           (DC)  thJC = 0.35 K/W 90 180°<br>80 120°<br>120 90°<br>70 60°<br>30°<br>Conduction Angle 60<br>110 50<br>RMS Limit<br>30 ° 40<br>60°<br>90° 30 Conduction Period<br>100 120°<br>20 50RIA Series<br>180° T   = 125°CJ<br>10<br>90 0<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80<br>Average On-state Current (A) Average On-state Current (A)<br>Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics<br>130 1300<br>50RIA Series At Any Rated Load Condition And With<br>R         (DC) = 0.35 K/W thJC 1200 Rated V          Applied Following Surge. RRM Initial T   = 125°CJ<br>120<br>@ 60 Hz 0.0083 s<br>1100 @ 50 Hz 0.0100 s<br>110<br>Conduction Period 1000<br>100 900<br>800<br>90 90°<br>60° 120° 700 50RIA Series<br>30° 180° DC<br>80 600<br>0 10 20 30 40 50 60 70 80 1 10 100<br>Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N)<br>Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current<br>80 1500<br>180° Maximum Non Repetitive Surge Current<br>70 120 ° 1400 Versus Pulse Train Duration. Control<br>90° Of Conduction May Not Be Maintained.<br>60 60 ° 1300 Initial T   = 125°C J<br>30° 1200 No Voltage Reapplied<br>50 Rated V        ReappliedRRM<br>1100<br>RMS Limit<br>40 1000<br>30 900<br>Conduction Angle 800<br>20<br>10 50RIA SeriesT  = 12 J 5°C 700 50RIA Series<br>600<br>0 500<br>0 10 20 30 40 50 0.01 0.1 1<br>Average On-state Current (A) Pulse Train Duration (s)<br>Maximum Allowable Case Temperature (°C) Maximum Average On-state Power Loss (W)<br>Maximum Allowable Case Temperature (°C) Peak Half Sine Wave On-state Current (A)<br>Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

Fig. 3 - On-State Power Loss Characteristics 

Fig. 6 - Maximum Non-Repetitive Surge Current 

Revision: 21-Sep-17 

Document Number: 93711 

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**VS-50RIA Series** 

## VISHAY, ~~—~~ 

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**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
1000 ————— eo<br>ee a |<br>rra——e<br>Lz | |<br>100 fo<br>py<br>pp T  = 25°C J<br>T  = 125°CJ<br>10<br>pp<br>pp<br>50RIA Series<br>1 | To Toe<br>0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>Instantaneous On-state Voltage (V)<br>Instantaneous On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 7 - Forward Voltage Drop Characteristics 

**==> picture [302 x 366] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 a<br>a a OG ee<br>Steady State Value a<br>a a ee<br>R            = 0.35 K/WthJ-hs cc<br>ITH Pteo<br>ea<br>0.1<br>a SO eG GOOO<br>Po<br>[oTPe ertTT<br>50RIA Series<br>0.01<br>0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>Fig. 8 - Thermal Impedance ZthJC Characteristics<br>100<br>Rectangular gate pulse (1) PGM = 10W,  tp = 5ms<br>a) Recommended load line for Ty (2) PGM = 20W,  tp = 2.5ms<br>     rated di/dt : 20V, 30 ohms; tr<=0.5 µs 0 (3) PGM = 50W,  tp = 1ms<br>b) Recommended load line for (4) PGM = 100W,  tp = 500µs<br>    <=30% rated di/dt : 20V, 65 ohms ia<br>10     tr<=1 µs<br>_———ee a roes (b) NeVO (a) NENGNNONENGNGA<br>Po IE A NEAR SST TE<br>pT er TTT TUNE SN<br>eT aaHoH<br>1 ee Tea a<br>(1) (2) (3) (4)<br>ire6 Gt Sea|| a<br>4 VGD Ht tt mT PtPT)<br>IGD 50RIA Series     Frequency Limited by PG(AV)<br>0.1<br>0.001 0.01 0.1 1 10 100 1000<br>Instantaneous Gate Current (A)<br>Fig. 9 - Gate Characteristics<br>thJ-hs<br>Transient Thermal Impedance Z          (K/W)<br>jT<br>Tj=-40 °C<br>Tj=125  ° =25 °C<br>Instantaneous Gate Voltage (V) C<br>**----- End of picture text -----**<br>


Revision: 21-Sep-17 

Document Number: 93711 

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**VS-50RIA Series** 

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## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

|-<br>Current code<br>-<br>Essential part number<br>-<br>Voltage code x 10 = VRRM(see Voltage Ratings table)<br>-<br>None = stud base TO-65 (TO-208AC) 1/4" 28UNF-2A<br>M = stud base TO-65 (TO-208AC) M6 x 1<br>-<br>Critical dV/dt:<br>None = 500 V/μs (standard value)<br>S90 = 1000 V/μs (special selection)<br>**Device code**<br>5<br>1<br>3<br>2<br>4<br>**50**<br>**RIA**<br>**120**<br>**S90**<br>**M**<br>**3**<br>**4**<br>**6**<br>**5**<br>**2**<br>**VS-**<br>6<br>**1**<br>-<br>Vishay Semiconductors product|-<br>Current code<br>-<br>Essential part number<br>-<br>Voltage code x 10 = VRRM(see Voltage Ratings table)<br>-<br>None = stud base TO-65 (TO-208AC) 1/4" 28UNF-2A<br>M = stud base TO-65 (TO-208AC) M6 x 1<br>-<br>Critical dV/dt:<br>None = 500 V/μs (standard value)<br>S90 = 1000 V/μs (special selection)<br>**Device code**<br>5<br>1<br>3<br>2<br>4<br>**50**<br>**RIA**<br>**120**<br>**S90**<br>**M**<br>**3**<br>**4**<br>**6**<br>**5**<br>**2**<br>**VS-**<br>6<br>**1**<br>-<br>Vishay Semiconductors product|-<br>Current code<br>-<br>Essential part number<br>-<br>Voltage code x 10 = VRRM(see Voltage Ratings table)<br>-<br>None = stud base TO-65 (TO-208AC) 1/4" 28UNF-2A<br>M = stud base TO-65 (TO-208AC) M6 x 1<br>-<br>Critical dV/dt:<br>None = 500 V/μs (standard value)<br>S90 = 1000 V/μs (special selection)<br>**Device code**<br>5<br>1<br>3<br>2<br>4<br>**50**<br>**RIA**<br>**120**<br>**S90**<br>**M**<br>**3**<br>**4**<br>**6**<br>**5**<br>**2**<br>**VS-**<br>6<br>**1**<br>-<br>Vishay Semiconductors product|
|---|---|---|
|**LINKS TO RELATED DOCUMENTS**|||
|Dimensions||www.vishay.com/doc?95334|



Revision: 21-Sep-17 

Document Number: 93711 

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**Outline Dimensions** 

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## Vishay Semiconductors 

## **TO-208AC (TO-65)** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
5.1/7.6<br>(0.2/0.3)<br>C<br>3 min. Ø 4.1 (Ø 0.16)<br>(0.118 min.)<br>G<br>Ø 1.5 (Ø 0.06)<br>2.5/3.6<br>31 max. (0.1/0.14)<br>(1.22 max.)<br>22.4 max.<br>Ø 15 (Ø 0.59) (0.88 max.)<br>14.5 max.<br>(0.57 max.)<br>10.7/11.5<br>(0.42/0.46)<br>A<br>Note:<br>A = Anode<br>C = Cathode 1/4"-28UNF-2A<br>G = Gate for metric device M6 x 1<br>Ø 19.2 (Ø 0.75)<br>17.2/17.35<br>(0.67/0.68)<br>Across flats 0.55 ± 0.03<br>0.94 ± 0.04<br>1.7/1.8<br>(0.06/0.07)<br>2.7 (0.106)<br>**----- End of picture text -----**<br>


Revision: 02-Jun-17 

Document Number: 95334 

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**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-50RIA60/thyristor-diode-module-single-scr-600-v-100-ma-50)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-50ria60/thyristor-50a-600v-to-65/dp/9104739)
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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.