# Fast / Ultrafast Diode, 100 V, 3 A, Single, 950 mV, 30 ns, 70 A

![Product image](https://novapart.co/image/farnell:3497261RL/)

**URL**: https://novapart.co/products/VS-3EYH01-M3/H/fast-ultrafast-diode-100-v-3-a-single-950-mv-30-ns
**SKU**: VS-3EYH01-M3/H
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.1430
**Stock**: 1000+
**Lead Time**: 71 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (04-Feb-2026) |
| No. Of Pins | 2 Pin |
| Product Range | FRED Pt Series |
| Qualification | - |
| Diode Case Style | DO-221AD |
| Diode Configuration | Single |
| Forward Voltage Max | 950mV |
| Forward Surge Current | 70A |
| Reverse Recovery Time | 30ns |
| Average Forward Current | 3A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3497261RL/)

## **VS-3EYH01-M3, VS-3EYH02-M3** www.vishay.com Vishay Semiconductors ae ~~a~~ **Hyperfast Rectifier, 3 A FRED Pt[®]** 

**==> picture [110 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
eSMP [®]  Series<br>Top View Bottom View<br>SlimSMAW (DO-221AD)<br>**----- End of picture text -----**<br>


**LINKS TO ADDITIONAL RESOURCES** ~~Es~~ 3D Models 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|3 A|
|VR|100 V, 200 V|
|VFat IF|0.71 V|
|IFSM|70 A|
|trr(typ.)|16 ns|
|TJmax.|175 °C|
|Package|SlimSMAW (DO-221AD)|
|Circuit configuration|Single|



## **FEATURES** 

- Low profile package 

- Ideal for automated placement 

- Low forward voltage drop, low power losses 

- Low leakage current 

- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 

- Class 2 whisker test 

- Compatible to SOD-128 package case outline 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION / APPLICATIONS** 

For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotive applications. 

## **MECHANICAL DATA** 

## **Case:** SlimSMAW 

Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant 

**Terminals:** matte tin plated leads, solderable per J-STD-002 

**Polarity:** color band denotes cathode end 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Peak repetitive reverse voltage<br>VS-3EYH01-M3<br>VS-3EYH02-M3|VRRM||100|V|
||||200||
|Average rectified forward current|IF(AV) (1)|TC= 137 °C|3|A|
|Non-repetitive peak surge current|IFSM|TJ= 25 °C, 10 ms sine pulse wave|70||
|Operatingjunction and storage temperatures|TJ, TStg||-55 to +175|°C|



## **Note** 

> (1) Mounted on infinite heatsink 

~~|~~ **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) ~~a~~ **PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS** Breakdown voltage, blocking voltage VS-3EYH01-M3VS-3EYH02-M3 VBR, VR IR = 100 μA 100200 -- -- ~~a~~ V IF = 3 A - 0.86 0.95 ~~ee~~ Forward voltage, per diode ~~|~~ VF IF = 3 A, T ~~ee~~ J = 150 °C ~~ee~~ - 0.71 ~~ee~~ 0.79 ~~ee[ee]~~ VR = VR rated - - 2 ~~ee~~ Reverse leakage current, per diode IR ~~es~~ TJ = 150 °C, VR = VR rated - - 20 μA ~~YG~~ Junction capacitance CT VR = 200 V - 16 - pF 

Revision: 28-Jan-2021 

Document Number: 96515 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3EYH01-M3, VS-3EYH02-M3** 

## www.vishay.com 

## Vishay Semiconductors 

## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 50 A/μs, VR= 30 V||-|22|-|ns|
|||IF= 1.0 A, dIF/dt = 100 A/μs, VR= 30 V||-|16|-||
|||IF= 0.5 A, IR= 1A, Irr= 0.25 A||-|-|30||
|||TJ= 25 °C|IF= 3 A,<br>dIF/dt = 200 A/μs,<br>VR= 100 V|-|18|-||
|||TJ= 125 °C||-|30|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|2.5|-|A|
|||TJ= 125 °C||-|4|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|23|-|nC|
|||TJ= 125 °C||-|60|-||



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and storage temperature range||TJ, TStg||-55|-|175|°C|
|Thermal resistance, junction to mount||RthJM (1)|Infinite heatsink|-|12|15|°C/W|
|Thermal resistance, junction to ambient||RthJA|Device mounted on FR4 PCB,<br>2 oz. standard footprint|-|120|150||
|Marking device|VS-3EYH01-M3||Case style SlimSMAW (DO-221AD)|3H1||||
||VS-3EYH02-M3|||3H2||||



## **Note** 

> (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) 

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**----- Start of picture text -----**<br>
100<br>10<br>T J  = 175 °C<br>1 TJ = 150 °C<br>TJ = 125 °C<br>TJ = 25 °C<br>TJ = -40 °C<br>0.1<br>0.4 0.6 0.8 1.0 1.2 1.4<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>175  ° C<br>10<br>150 °C<br>1<br>125 °C<br>0.1<br>25 °C<br>0.01<br>0.001<br>0.0001<br>50 100 150 200<br>VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

Revision: 28-Jan-2021 

Document Number: 96515 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3EYH01-M3, VS-3EYH02-M3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [203 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>1<br>0 25 50 75 100 125 150 175 200<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

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**----- Start of picture text -----**<br>
1000<br>Junction to ambient<br>100<br>Junction to mount<br>10<br>1<br>0.1<br>0.001 0.01 0.1 1 10 100<br>t1 - Rectangular Pulse Duration (s)<br>C/W)<br>°<br>- Thermal Impedance (<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 

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**----- Start of picture text -----**<br>
180<br>170<br>160<br>DC<br>150<br>140 Square wave (D = 0.50)<br>rated VR applied<br>130<br>See note  [(1)]<br>120<br>0 0.5 1 1.5 2 2.5 3 3.5<br>IF(AV) - Average Forward Current (A)<br>Fig. 5 - Maximum Allowable Case Temperature vs.<br>Average Forward Current<br>C)<br>°<br>Allowable Case Temperature (<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.5<br>RMS limit<br>3<br>2.5<br>2<br>D = 0.02<br>1.5<br>D = 0.05<br>D = 0.1<br>1 D = 0.2<br>D = 0.5<br>0.5 DC<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>IF(AV) - Average Forward Current (A)<br>Fig. 6 - Forward Power Loss Characteristics<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


## **Note** 

> (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR 

Revision: 28-Jan-2021 

Document Number: 96515 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3EYH01-M3, VS-3EYH02-M3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [200 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>35<br>30<br>125 °C<br>25<br>20 25  ° C<br>15<br>10<br>100 200 300 400 500<br>dIF/dt (A/μs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 

**==> picture [201 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>70 125  ° C<br>60<br>50<br>40<br>25 °C<br>30<br>20<br>10<br>0<br>100 200 300 400 500<br>dIF/dt (A/μs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Stored Charge vs. dIF/dt 

## **ORDERING INFORMATION TABLE** 

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**----- Start of picture text -----**<br>
Device code VS- 3 E Y H 02 - M3<br>1 2 3 4 5 6 7<br>1 - Vishay Semiconductors product<br>2 - Current rating (3 = 3 A)<br>3 - Circuit configuration:<br>  E = single diode<br>4 - Y = SlimSMAW (DO-221AD)<br>5 - Process type,<br>H = hyperfast recovery<br>6 - Voltage code (02 = 200 V)<br>7 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free<br>**----- End of picture text -----**<br>


|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**UNIT WEIGHT**<br>**(g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**|
|VS-3EYH01-M3/H|0.033|H|3500|7"diameter plastic tape and reel|
|VS-3EYH01-M3/I|0.033|I|14 000|13"diameter plastic tape and reel|
|VS-3EYH02-M3/H|0.033|H|3500|7"diameter plastic tape and reel|
|VS-3EYH02-M3/I|0.033|I|14 000|13"diameter plastic tape and reel|



## **LINKS TO RELATED DOCUMENTS** 

|**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|
|---|---|---|
|Dimensions||www.vishay.com/doc?96582|
|Part markinginformation||www.vishay.com/doc?95562|
|Packaginginformation||www.vishay.com/doc?88869|
|SPICE model||www.vishay.com/doc?96586|



Revision: 28-Jan-2021 

Document Number: 96515 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **SlimSMAW (DO-221AD)** 

## **DIMENSIONS** in inches (millimeters) 

## **SlimSMAW (DO-221AD)** 

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**----- Start of picture text -----**<br>
Cathode band<br>0.106 (2.70) 0.075 (1.90)<br>0.091 (2.30) 0.063 (1.60)<br>0.158 (4.00) 0.032 (0.81) 0.024 (0.60)<br>0.142 (3.60) 0.014 (0.36) 0.012 (0.30)<br>0.197 (5.00)<br>0.173 (4.40)<br>0.043 (1.10)<br>0.035 (0.90)<br>0.009 (0.22)<br>0.004 (0.10)<br>0.083 (2.10) min.<br>0.118 (3.00) max.<br>0.055 (1.40) min. 0.055 (1.40) min.<br>0.228 (5.80) ref.<br>Mounting pad layout<br>**----- End of picture text -----**<br>


Revision: 11-Dec-2018 

Document Number: 96582 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2021 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-3EYH01-M3/H/fast-ultrafast-diode-100-v-3-a-single-950-mv-30-ns)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-3eyh01-m3-h/hyperfast-rectifier-30ns-100v/dp/3497261RL)
---

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