# Silicon Carbide Schottky Diode, Single Dual Cathode, 650 V, 16 A, 44 nC, TO-220AC

![Product image](https://novapart.co/image/farnell:4486792/)

**URL**: https://novapart.co/products/VS-3C16ET07T-M3/silicon-carbide-schottky-diode-single-dual-cathode
**SKU**: VS-3C16ET07T-M3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.8500
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (04-Feb-2026) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single Dual Cathode |
| Average Forward Current | 16A |
| Total Capacitive Charge | 44nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4486792/)

**VS-3C16ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **650 V Power SiC Gen 3 Merged PIN Schottky Diode, 16 A** 

## **FEATURES** 

**==> picture [505 x 550] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|2|Base cathode|•|Majority carrier diode using Schottky technology|
|2|on SiC wide band gap material|
|•|Improved VF and efficiency by thin wafer|
|technology|
|•|Positive VF temperature coefficient for easy|
|1|paralleling|
|1|3|•|Virtually no recovery tail and no switching losses|
|3|Cathode|Anode|•|Temperature invariant switching behavior|
|TO-220AC 2L|•|175 °C maximum operating junction temperature|
|•|MPS structure for high ruggedness to forward current|
|surge events|
|•|Meets JESD 201 class 1A whisker test|
|LINKS TO ADDITIONAL RESOURCES|
|•|Solder bath temperature 275 °C maximum, 10 s per|
|JESD 22-B106|
|Ee|3D Models|Application|•|Material categorization: for definitions of compliance|
|Notes|please see www.vishay.com/doc?99912|
|DESCRIPTION / APPLICATIONS|
|Wide band gap SiC based 650 V Schottky diode, designed|
|PRIMARY CHARACTERISTICS|for high performance and ruggedness.|
|IF(AV)|16 A|Optimum choice for high speed hard switching and efficient|
|VR|650 V|operation over a wide temperature range, it is also recommended for all applications suffering from Silicon|
|VF at IF at 25 °C, typ.|1.3 V|ultrafast recovery behavior.|
|TJ max.|175 °C|Typical applications include AC/DC PFC and DC/DC ultra|
|high frequency output rectification in FBPS and LLC|
|IR at VR at 175 °C|6.5 μA|converters.|
|QC (VR = 400 V)|44 nC|
|MECHANICAL DATA|
|Package|TO-220AC 2L|
|Case:|TO-220AC 2L|
|Circuit configuration|Single|Molding compound meets UL 94 V-0 flammability rating|
|Base P/N-M3 - halogen-free, RoHS-compliant|
|Terminals:|matte tin plated leads, solderable per|
|J-STD-002 and JESD 22-B102|
|Mounting torque:|10 in-lbs maximum|
|EE|MAXIMUM RATINGS|(TA = 25 °C unless otherwise specified)|
|rs|PARAMETER|SYMBOL|(RU|TEST CONDITIONS|VALUES|UNITS|
|es|Peak repetitive reverse voltage|VRRM|650|V|
|IF|[(1)]|TC = 132 °C (DC)|
|Continuous forward current|16|A|
|eees|IF|[(2)]|ee|TC = 142 °C (DC)|ee|
|ee|DC blocking voltage|Gn|VDC|650|V|
|re|Repetitive peak forward current|IFRM|TC = 25 °C, f = 50 Hz, square wave, DC = 25 %|60|A|
|Non-repetitive peak forward surge current|IFSM|TC = 25 °C, tp = 10 ms, half sine wave|104|A|
|a|rsrsGR|TC = 110 °C, tp = 10 ms, half sine wave|95|
|Ptot|[(1)]|TC = 25 °C|89|W|
|TC = 110 °C|39|
|Power dissipation|
|Ptot|[(2)]|TC = 25 °C|115|W|
|Be|TC = 110 °C|50|
|TC = 25 °C|54|
|I|[2]|t value||i|[2]|dt|TC = 110 °C|46|A|[2]|s|
|ee|——|{_|—ee—|
|rs|Operating junction and storage temperatures|TJ|[(2)]|, TStg|-55 to +175|°C|

**----- End of picture text -----**<br>


## **LINKS TO ADDITIONAL RESOURCES** 

**Notes** 

> (1) Based on maximum Rth 

> (2) Based on typical Rth 

> (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA 

Revision: 10-Apr-2024 

Document Number: 97041 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C16ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Forward voltage|VF|IF= 16 A|-|1.3|1.5|V|
|||IF= 16 A, TJ= 150 °C|-|1.50|1.80||
|||IF= 16 A, TJ= 175 °C|-|1.58|-||
|Reverse leakage current|IR|VR= VRrated|-|1.0|85|μA|
|||VR= VRrated, TJ= 150 °C|-|4|200||
|||VR= VRrated, TJ= 175 °C|-|6.5|-||
|Total capacitance|C|VR= 1 V, f = 1 MHz|-|700|-|pF|
|||VR= 400 V, f = 1 MHz|-|70|-||
|Total capacitive charge|QC|VR= 400 V, f = 1 MHz|-|44|-|nC|



|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Thermal resistance, junction-to-case|RthJC||-|1.3|1.7|°C/W|
|Markingdevice||||3C16ET07T|||



**==> picture [210 x 364] intentionally omitted <==**

**----- Start of picture text -----**<br>
70 10000<br>T J = 25 °C<br>60<br>T J = -55 °C<br>50<br>1000<br>40<br>30<br>100<br>20<br>TJ = 125 °C<br>10 T T JJ = 150 °C = 175 °C<br>0 10<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br>Axis Title<br>10 10000<br>1 TJ = 175 °C<br>T J = 150 °C 1000<br>0.1<br>0.01<br>100<br>0.001 TJ = 125 °C<br>TJ = 25 °C<br>T J  = -55 °C<br>0.0001 10<br>0 100 200 300 400 500 600 700<br>VR - Reverse Voltage (V)<br> - Instantaneous Forward Current (A)IF<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

**==> picture [209 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10000<br>1000<br>100<br>100<br>TJ = 25 °C<br>f = 1.0 MHz<br>10 10<br>0.1 1 10 100 1000<br>VR - Reverse Voltage (V)<br>Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage<br>Axis Title<br>10000<br>1000 TJ = 25 °C<br>1000<br>T J = 110 °C<br>100<br>100<br>10 10<br>0.01 0.1 1 10<br>tp (ms)<br>C - Junction Capacitance (pF)T<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) 

Revision: 10-Apr-2024 

Document Number: 97041 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C16ET07T-M3** 

**==> picture [284 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>a oe<br>**----- End of picture text -----**<br>


## Vishay Semiconductors 

**==> picture [464 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>ST EHH<br>0.1 D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>PT TTT PET ET D = 0.02D = 0.01 a a<br>0.01 PL TP DC WM TUPEE<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t1 - Rectangular Pulse Duration (s)<br> - Thermal Impedance<br>thJC Junction to Case (°C/W)<br>Z<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Thermal Impedance ZthJC Characteristics 

**==> picture [190 x 372] intentionally omitted <==**

**----- Start of picture text -----**<br>
125<br>D = 0.1 T<br>100 SL<br>D = 0.2 —— D = t JL p/T tp<br>75 <a<br>D = 0.3<br>50 FINO<br>D = 0.5<br>D = 0.7<br>———<br>25<br>DC SS<br>0 SVRSW<br>25 50 75 100 125 150 175<br>TC (°C)<br>Fig. 6 - Peak Forward Current vs.<br>Maximum Allowable Case Temperature<br>Axis Title<br>120<br>100 NEa —see=<br>80<br>RthJC typ.<br>PSO<br>60<br>SE<br>RthJC max.<br>4020 PFoRDNAAG<br>i<br>0 ee eN<br>25 50 75 100 125 150 175<br>Case Temperature (°C)<br>(peak) (A)<br>IF<br>Allowable Input Power (W)<br>**----- End of picture text -----**<br>


Fig. 7 - Forward Power Loss Characteristics 

**==> picture [189 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>14<br>PTT<br>12<br>aaa<br>10 A<br>8<br>aaa<br>6<br>4 oa5 46 TJ = 25 °C<br>2<br>g,=[ cva<br>0 SecaaneAme.<br>0 100 200 300 400 500 600 700<br>Reverse Voltage (V)<br>Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage<br>Axis Title<br>70<br>60 +t<br>50 ao<br>40<br>oo a<br>30 tt<br>a,<br>20 TJ = 25 °C<br>FS<br>| 7 |<br>10<br>fr. [cw<br>0 po °<br>0 100 200 300 400 500 600 700<br>Reverse Voltage (V)<br>(µJ)<br>Energy<br>Capacitive<br>(nC)<br>Charge<br>Capacitive<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage 

Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage 

Revision: 10-Apr-2024 

Document Number: 97041 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C16ET07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

**==> picture [392 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
Device code VS- 3C 16 E T 07 T -M3<br>1 2 3 4 5 6 7 8<br>1 - Vishay Semiconductors product<br>2 - 3C = SiC diode, Generation 3<br>3 - Current rating (16 = 16 A)<br>4 - E = single diode<br>5 - Package TO-220<br>6 - Voltage rating: (07 = 650 V)<br>7 -  T = true 2 pin<br>8 - Environmental digit:<br>-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free<br>**----- End of picture text -----**<br>


|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|||
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|||**PACKAGING DESCRIPTION**|
|VS-3C16ET07T-M3|50/tube|||Antistatic plastic tubes|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96069||
|Part markinginformation|||www.vishay.com/doc?95391||



Revision: 10-Apr-2024 

Document Number: 97041 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

www.vishay.com 

## Vishay Semiconductors 

## **TO-220AC 2L** 

## **DIMENSIONS** in millimeters and inches 

**==> picture [498 x 231] intentionally omitted <==**

**----- Start of picture text -----**<br>
B<br>Seating<br>(6) A plane<br>E Ø P A A Thermal pad<br>E2 (7) 0.014 M B A M A1 E<br>Q<br>(6) H1 H1<br>(7)<br>D2  (6)<br>(6) D Detail B<br>D1<br>(2) L1 C<br>E1  (6)<br>(b, b2) Plating<br>Base metal<br>L D D<br>L1 (2)<br>C C c c1 (4)<br>e1 2 x b 2 x b2 c A b1, b3 (4)<br>Detail B A2 View A - A Section C - C and D - D<br>0.015 M B A M<br>**----- End of picture text -----**<br>


|**SYMBOL**<br><br>|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A<br>|4.25|4.65|0.167|0.183|||E1|6.86|8.89|0.270|0.350|6|
|A1<br>|1.14|1.40|0.045|0.055|||E2|-|0.76|-|0.030|7|
|A2<br>|2.56|2.92|0.101|0.115|||e1|4.88|5.28|0.192|0.208||
|b<br>|0.69|1.01|0.027|0.040|||H1|5.84|6.86|0.230|0.270|6, 7|
|b1<br>|0.38|0.97|0.015|0.038|4||L|13.52|14.02|0.532|0.552||
|b2<br>|1.20|1.73|0.047|0.068|||L1|3.32|3.82|0.131|0.150|2|
|b3<br>|1.14|1.73|0.045|0.068|4||Ø P|3.54|3.73|0.139|0.147||
|c<br>|0.36|0.61|0.014|0.024|||Q|2.60|3.00|0.102|0.118||
|c1<br>|0.36|0.56|0.014|0.022|4||||||||
|D<br>1|4.85|15.25|0.585|0.600|3||||||||
|D1<br>|8.38|9.02|0.330|0.355|||||||||
|D2<br>1|1.68|12.88|0.460|0.507|6||||||||
|E<br>1|0.11|10.51|0.398|0.414|3, 6||||||||



## **Notes** 

- (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 

- (2) Lead dimension and finish uncontrolled in L1 

> (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body 

- (4) Dimension b1, b3 and c1 apply to base metal only 

- (5) Controlling dimension: inches 

- (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 

- (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed 

- (8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480" 

Revision: 23-Feb-2024 

Document Number: 96069 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** 

www.vishay.com 

Vishay 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jul-2024 

Document Number: 91000 

**1** For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-3C16ET07T-M3/silicon-carbide-schottky-diode-single-dual-cathode)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-3c16et07t-m3/sic-schottky-diode-650v-16a-to/dp/4486792)
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