# Silicon Carbide Schottky Diode, eSMP Series, Single, 650 V, 6 A, 17 nC, SlimDPAK

![Product image](https://novapart.co/image/farnell:4486774RL/)

**URL**: https://novapart.co/products/VS-3C06EV07T-M3/I/silicon-carbide-schottky-diode-esmp-series-single
**SKU**: VS-3C06EV07T-M3/I
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.8670
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Average Forward Current | 6A |
| Total Capacitive Charge | 17nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4486774RL/)

**VS-3C06EV07T-M3** 

~~—~~ www.vishay.com 

## Vishay Semiconductors 

## **650 V Power SiC Gen 3 Merged PIN Schottky Diode, 6 A** 

**==> picture [145 x 145] intentionally omitted <==**

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eSMP [®]  Series<br>K .<br>1 A 3<br>2<br>Top View Bottom View<br>SlimDPAK 2L<br>K<br>Cathode, 1 Base<br>Anode, 2<br>**----- End of picture text -----**<br>


## **LINKS TO ADDITIONAL RESOURCES** 

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EDA / CAD<br>**----- End of picture text -----**<br>


## **FEATURES** 

- Creepage and clearance distance 2.8 mm minimum 

- Very low profile – typical height of 1.3 mm 

- Majority carrier diode using Schottky technology on SiC wide band gap material 

- Improved VF and efficiency by thin wafer technology 

- Positive VF temperature coefficient for easy paralleling 

- Virtually no recovery tail and no switching losses 

- Temperature invariant switching behavior 

- 175 °C maximum operating junction temperature 

- MPS structure for high ruggedness to forward current surge events 

- Meets JESD 201 class 2 whisker test 

- Meet MSL level 1, per J-STD-020, LF maximum peak of 260 °C 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION / APPLICATIONS** 

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|6 A|
|VR|650 V|
|VFat IFat 25 °C, typ.|1.30 V|
|TJmax.|175 °C|
|IRat VRat 175 °C|16 μA|
|QC(VR= 400 V)|17 nC|
|Package|SlimDPAK 2L|
|Circuit configuration|Single|



Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. 

Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. 

## **MECHANICAL DATA** 

**Case:** SlimDPAK 2L 

Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

~~pT~~ **MAXIMUM RATINGS** (TA = 25 °C unless otherwise specified) ~~GG~~ **PARAMETER SYMBOL NOTES / TEST CONDITIONS VALUES UNITS** ~~GG~~ Peak repetitive reverse voltage VRRM 650 V ~~GG~~ Continuous forward current IF TM = 154 °C (DC) 6 A ~~GO~~ DC blocking voltage VDC 650 V ~~GO~~ Repetitive peak surge current IFRM TM = 25 °C, f = 50 Hz, square wave, DC = 25 % 35 A Non-repetitive peak forward surge current IFSM TM = 25 °C, tp = 10 ms, half sine wave 42 A ~~mtspo~~ TM = 110 °C, tp = 10 ms, half sine wave 40 ~~rr~~ Ptot[(1)] TTMM = 25 °C = 110 °C 3172 W Power dissipation ~~Be~~ Ptot[(2)] ~~pO~~ TTMM = 25 °C = 110 °C 3887 W TM = 25 °C 9 I[2] t value  i[2] dt TM = 110 °C 8 A[2] s ~~ee te ee ennaEEE GD~~ Operating junction and storage temperatures TJ[(3)] , TStg -55 to +175 °C **Notes** 

> (1) Based on maximum Rth 

> (2) Based on typical Rth 

> (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA 

Revision: 04-Jul-2023 

Document Number: 97129 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C06EV07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Forward voltage|VF|IF= 6 A|-|1.3|1.5|V|
|||IF= 6 A, TJ= 150 °C|-|1.50|1.75||
|||IF= 6 A, TJ= 175 °C|-|1.58|-||
|Reverse leakage current|IR|VR= VRrated|-|0.25|47|μA|
|||VR= VRrated, TJ= 150 °C|-|5.5|100||
|||VR= VRrated, TJ= 175 °C|-|16|-||
|Total capacitance|C|VR= 1 V, f = 1 MHz|-|255|-|pF|
|||VR= 400 V, f = 1 MHz|-|27|-||
|Total capacitive charge|QC|VR= 400 V, f = 1 MHz|-|17|-|nC|



|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Thermal resistance, junction-to-mount|RthJM||-|1.72|2.1|°C/W|
|Markingdevice|||3C06EV07T||||



**==> picture [209 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
45 10000<br>40<br>35<br>30 TJ = 25 °C 1000<br>25 TJ = -55 °C<br>20<br>15 100<br>10 T J = 125 °C<br>5 TTJ J  = 150 °C= 175 °C<br>0 10<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br>Axis Title<br>100 10000<br>TJ = 175 °C<br>10 T J = 150 °C<br>1 1000<br>0.1<br>0.01 100<br>0.001 TJ = 125  ° C<br>TTJJ = 25 °C = -55  ° C<br>0.0001 10<br>0 100 200 300 400 500 600 700<br>VR - Reverse Voltage (V)<br> - Instantaneous Forward Current (A)IF<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

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**----- Start of picture text -----**<br>
1000 10000<br>1000<br>100<br>100<br>TJ = 25 °C<br>f = 1.0 MHz<br>10 10<br>0.1 1 10 100 1000<br>VR - Reverse Voltage (V)<br>C - Junction Capacitance (pF)T<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

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**----- Start of picture text -----**<br>
1000<br>T J = 25 °C<br>100<br>T J  = 110  ° C<br>10<br>0.01 0.1 1 10<br>tp (ms)<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) 

Revision: 04-Jul-2023 

Document Number: 97129 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C06EV07T-M3** 

www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
1<br>eTCTmere TTT TTT<br>D = 0.5<br>D = 0.2<br>Se ISSN D = 0.1 Sono<br>D = 0.05<br>D = 0.02<br>D = 0.01<br>0.1 aS DC Ce<br>LIE LAMM EPS EI TEE<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1 - Rectangular Pulse Duration (s)<br> - Thermal Impedance<br>thJM Junction to Case (°C/W)<br>Z<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Thermal Impedance ZthJM Characteristics 

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**----- Start of picture text -----**<br>
70 10000<br>T 7<br>D = 0.1<br>60<br>6<br>50 PS D = t tt p/T tp TT TTT<br>1000 5<br>D = 0.2<br>40 aS PT TTT TY<br>4<br>D = 0.3<br>30<br>SI D = 0.5 INREN 3 PffF |).<br>PT tT<br>100<br>20 D = 0.7<br>DC SA 2 TAL TJ = 25 °C<br>10<br>| SSN 1 rT4THT<br>0 10<br>pS 0 ee Tf eve<br>25 50 75 100 125 150 175<br>0 100 200 300 400 500 600 700<br>TM (°C)<br>Reverse Voltage (V)<br>Fig. 6 - Peak Forward Current vs. Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage<br>Maximum Allowable Mount Temperature<br>Axis Title<br>90 10000<br>25<br>80<br>70 20<br>SCE TTT Te<br>60 1000<br>50 Soe RthJM typ. 15 Cer<br>40 pS QU LZ<br>Sk 10 EDZanne<br>30 R thJM max. 100<br>20 TJ = 25 °C<br>Ne 5 Vann<br>10 Sae\N=PT :<br>0 Pr 10 0 ae a<br>25 50 75 100 125 150 175<br>0 100 200 300 400 500 600 700<br>Case Temperature (°C) Reverse Voltage (V)<br>(µJ)<br>line Energy<br>(peak) (A) 1st line 2nd line<br>IF  2nd<br>Capacitive<br>(nC)<br>line<br>1st line 2nd line Charge<br>2nd<br>Allowable Input Power (W) Capacitive<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage 

Fig. 7 - Forward Power Loss Characteristics 

Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage 

Revision: 04-Jul-2023 

Document Number: 97129 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C06EV07T-M3** 

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## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

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**----- Start of picture text -----**<br>
Device code VS- 3C 06 E V 07 T -M3<br>1 2 3 4 5 6 7 8<br>1 - Vishay Semiconductors product<br>2 - 3C = SiC diode, Generation 3<br>3 - Current rating (06 = 6 A)<br>4 - E = single diode<br>5 - Package SlimDPAK<br>6 - Voltage rating: (07 = 650 V)<br>7 -  T = true 2 pin<br>8 - Environmental digit:<br>-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free<br>**----- End of picture text -----**<br>


|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|---|---|---|---|
|**ORDERING P/N**|**UNIT WEIGHT (g)**|**PACKAGE CODE**||**BASE QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-3C06EV07T-M3/I|0.20|I|||4500|13"diameter plastic tape and reel|
||||||||
|**LINKS TO RELATED DOCUMENTS**|||||||
|Dimensions|||||www.vishay.com/doc?97058||
|Part marking information|||||www.vishay.com/doc?97104||
|Packaging information|||||www.vishay.com/doc?88869||



Revision: 04-Jul-2023 

Document Number: 97129 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** Vishay Semiconductors 

www.vishay.com 

## **SlimDPAK 2L** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
0.055 (1.40)<br>0.047 (1.20) 0.016 (0.41)<br>0.249 (6.32) 0.010 (0.25)<br>0.239 (6.08)<br>0.028 (0.70)<br>0.012 (0.30)<br>0.265 (6.72)<br>0.255 (6.48) 0.370 (9.40)<br>0.339 (8.60)<br>0.008 (0.20)<br>0.000 (0.00)<br>0.055 (1.40)<br>0.039 (1.00)<br>0.180<br>(4.57) [NOM.]<br>Mounting Pad Layout<br>0.240<br>0.224 (5.70) MIN.<br>(6.10)<br>0.209 (5.30)<br>0.177<br>NOM. 0.207<br>(4.50) MIN.<br>(5.27)<br>0.386<br>REF.<br>(9.80)<br>0.075<br>MIN.<br>(1.90)<br>0.035 (0.90) 0.090 0.055<br>NOM. MIN.<br>0.028 (0.70) (2.29) (1.40)<br>**----- End of picture text -----**<br>


Revision: 09-Aug-2022 

Document Number: 97058 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** 

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Vishay 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

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Revision: 01-Jul-2024 

Document Number: 91000 

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- [Supplier page](https://es.farnell.com/vishay/vs-3c06ev07t-m3-i/sic-schottky-diode-650v-6a-slimdpak/dp/4486774RL)
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