# Silicon Carbide Schottky Diode, Single, 650 V, 4 A, 12 nC, TO-263AB (D2PAK)

![Product image](https://novapart.co/image/farnell:4486768/)

**URL**: https://novapart.co/products/VS-3C04ET07S2L-M3/silicon-carbide-schottky-diode-single-650-v-4-a-12
**SKU**: VS-3C04ET07S2L-M3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.8680
**Stock**: 25+
**Lead Time**: 85 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263AB (D2PAK) |
| Diode Configuration | Single |
| Average Forward Current | 4A |
| Total Capacitive Charge | 12nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4486768/)

**==> picture [506 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
,  f VS-3C04ET07S2L-M3<br>a www.vishay.com Vishay Semiconductors<br>a<br>650 V Gen 3 Power SiC Merged PIN Schottky Diode, 4 A<br>FEATURES<br>Base<br>cathode • Majority carrier diode using Schottky technology<br>4 4 on SiC wide band gap material<br>4 • Improved VF and efficiency by thin wafer F and efficiency by thin wafer  and efficiency by thin wafer  RoHS<br>technology<br>@ • Positive VF temperature coefficient for easy  FREE<br>paralleling<br>LSw | 1 3 • Virtually no recovery tail and no switching losses<br>; N/C Anode • Temperature invariant switching behavior<br>**----- End of picture text -----**<br>


- cathode • Majority carrier diode using Schottky technology 

- 4 4 on SiC wide band gap material 4 • Improved VF and efficiency by thin wafer F and efficiency by thin wafer  and efficiency by thin wafer RoHS technology 

   - Temperature invariant switching behavior 

   - 175 °C maximum operating junction temperature 

**==> picture [95 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
D [2] PAK 2L (TO-263AB 2L)<br>**----- End of picture text -----**<br>


- Meets MSL level 1, per J-STD-020, LF maximum peak of  245 °C 

- MPS structure for high ruggedness to forward current surge events 

## **LINKS TO ADDITIONAL RESOURCES** 

~~<>~~ 3D Models Application Notes 

- Meets JESD 201 class 1A whisker test 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION / APPLICATIONS** 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|4 A|
|VR|650 V|
|VFat IFat 25 °C, typ.|1.3 V|
|TJmax.|175 °C|
|IRat VRat 175 °C|1.3 μA|
|QC(VR= 400 V)|12 nC|
|Package|D2PAK 2L (TO-263AB 2L)|
|Circuit configuration|Single|



Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. 

Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. 

Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. 

## **MECHANICAL DATA** 

**Case:** D[2] PAK 2L (TO-263AB 2L) 

Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

~~|~~ **MAXIMUM RATINGS** (TA = 25 °C unless otherwise specified) ~~Ge~~ **PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS** ~~GG~~ Peak repetitive reverse voltage VRRM 650 V IF TC = 151 °C (DC) Continuous forward current 4 A ~~I~~ IF[(2)] TC = 156 °C (DC) ~~ee GG~~ DC blocking voltage VDC 650 V ~~eG~~ Repetitive peak forward current IFRM TC = 25 °C, f = 50 Hz, square wave, DC = 25 % 21 Non-repetitive peak forward surge current IFSM TC = 25 °C, tp = 10 ms, half sine wave 29 A ~~pfee~~ TC = 110 °C, tp = 10 ms, half sine wave 26 ~~_~~ Ptot[(1)] TC = 25 °C 40 W ~~sees~~ TC = 110 °C 17 Power dissipation Ptot[(2)] TC = 25 °C 52 W ~~eeee~~ TC = 110 °C 22 TC = 25 °C 4.1 I[2] t value A[2] s TC = 110 °C 3.3 ~~ee GG~~ Operating junction and storage temperatures TJ[(3)] , TStg -55 to +175 °C **Notes** 

> (1) Based on maximum Rth 

> (2) Based on typical Rth 

> (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA 

Revision: 10-Apr-2024 

Document Number: 96963 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C04ET07S2L-M3** 

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## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Forward voltage|VF|IF= 4 A|-|1.3|1.5|V|
|||IF= 4 A, TJ= 150 °C|-|1.5|1.85||
|||IF= 4 A, TJ= 175 °C|-|1.58|-||
|Reverse leakage current|IR|VR= VRrated|-|0.2|25|μA|
|||VR= VRrated, TJ= 150 °C|-|0.8|50||
|||VR= VRrated, TJ= 175 °C|-|1.3|-||
|Total capacitance|C|VR= 1 V, f = 1 MHz|-|175|-|pF|
|||VR= 400 V, f = 1 MHz|-|21|-||
|Total capacitive charge|QC|VR= 400 V, f = 1 MHz|-|12|-|nC|



## **THERMAL - MECHANICAL SPECIFICATIONS** (TA = 25 °C unless otherwise specified) 

|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|**THERMAL - MECHANICAL SPECIFICATIONS**(TA= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Thermal resistance, junction to case|RthJC||-|2.9|3.8|°C/W|
|Markingdevice|||3C04ET07S||||



**==> picture [209 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 10000<br>20 TJ = 25 °C 1000<br>TJ = -55 °C<br>10 100<br>TTJ J  = 125 °C= 150 °C<br>TJ = 175 °C<br>0 10<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br>Axis Title<br>10 10000<br>1 TJ = 175 °C<br>T J = 150 °C 1000<br>0.1<br>0.01<br>100<br>0.001 TJ = 125 °C<br>TJ = 25 °C<br>T J  = -55 °C<br>0.0001 10<br>0 100 200 300 400 500 600 700<br>VR - Reverse Voltage (V)<br> - Instantaneous Forward Current (A)IF<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

**==> picture [209 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10000<br>1000<br>100<br>100<br>TJ = 25 °C<br>f = 1.0 MHz<br>10 10<br>0.1 1 10 100 1000<br>VR - Reverse Voltage (V)<br>C - Junction Capacitance (pF)T<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

**==> picture [187 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 25 °C<br>100<br>T J = 110 °C<br>10<br>0.01 0.1 1 10<br>tp (ms)<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) 

Revision: 10-Apr-2024 

Document Number: 96963 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C04ET07S2L-M3** 

## www.vishay.com 

## Vishay Semiconductors 

**==> picture [464 x 582] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>A ee<br>PT TT ae<br>1<br>D = 0.5<br>D = 0.2<br>——oeAr| tT AWS Sw D D = 0.05= 0.1 ee ee<br>D = 0.02<br>eA I TTS a ee ell<br>D = 0.01<br>DC<br>0.1 AT TTT | ELUTE | ED Oell<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1 - Rectangular Pulse Duration (s)<br>Fig. 5 - Typical Thermal Impedance ZthJC Characteristics<br>Axis Title Axis Title<br>45 10000 5<br>T<br>40 r es<br>D = 0.1<br>35 4<br>I D = t ayL p/T tp Pe<br>30 iw 1000 | | | | | | Ff<br>D = 0.2 3<br>25 PNTJ  _T Ptae[| | | [FL]<br>20 D = 0.3<br>PBN 2 ee<br>15 D = 0.7 D = 0.5 SR 100 TTT<br>10 DC 1 TJ = 25 °C<br>5<br>0 aTSALS 10 0 HEEetok= {torcvav<br>25 50 75 100 125 150 175 0 100 200 300 400 500 600 700<br>TC (°C) Reverse Voltage (V)<br>Fig. 6 - Peak Forward Current vs. Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage<br>Maximum Allowable Case Temperature<br>Axis Title Axis Title<br>60 10000 20<br>50<br>ttt 15 SEE<br>40 1000<br>PN EL an<br>NON RthJC typ. va<br>30 10<br>20 PS R thJC max. ] 100 5 EEE TJ = 25 °C<br>10 Ne Za<br>0 eeeaNSN 10 0 7,Ae| | [car<br>25 50 75 100 125 150 175 0 100 200 300 400 500 600 700<br>Case Temperature (°C) Reverse Voltage (V)<br> - Thermal Impedance<br>thJC Junction to Case (°C/W)<br>Z<br>(µJ)<br>line Energy<br>2nd line (peak) (A) 1st line 2nd line 2nd<br>IF<br>Capacitive<br>(nC)<br>line<br>Charge<br>2nd line 1st line 2nd line 2nd<br>Capacitive<br>Allowable Input Power (W)<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage 

Fig. 7 - Forward Power Loss Characteristics 

Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage 

Revision: 10-Apr-2024 

Document Number: 96963 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-3C04ET07S2L-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

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**----- Start of picture text -----**<br>
Device code VS- 3C 04 E T 07 S 2 L -M3<br>1 2 3 4 5 6 7 8 9 10<br>1 - Vishay Semiconductors product<br>2 - 3C =  SiC diode, generation 3<br>3 - Current rating (04 = 4 A)<br>4 - E = single diode<br>5 - T = D [2] PAK package<br>6 - Voltage rating: (07 = 650 V)<br>7 -  S = surface mountable<br>8 - 2 = true 2 pin D [2] PAK<br>9 - L = tape and reel (left oriented)<br>10 - Environmental digit:<br>-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|||**PACKAGING DESCRIPTION**|
|VS-3C04ET07S2L-M3|800 per reel|||13" diameter reel|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96683||
|Part markinginformation|||www.vishay.com/doc?96693||
|Packaginginformation|||www.vishay.com/doc?95032||



Revision: 10-Apr-2024 

Document Number: 96963 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

www.vishay.com 

## Vishay Semiconductors 

## **D[2] PAK 2L (TO-263AB 2L)** 

## **DIMENSIONS** in millimeters and inches 

||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Conforms to**<br><br>D<br>B<br>L1<br>(3)<br>e<br>2 x|||**JEDEC® out**||Detail A<br> <br>Lead tip<br>0°<br>**line D2PAK (SMD-220)**<br>C<br>A<br>(2)<br>H<br>2 x b<br>2 x b2<br>0.010<br>A<br>B<br>M<br>M||||||c<br>B<br>c2<br>**A**<br>A<br>A|||||(E||(3)<br>(3)<br>- A<br><br>(D1)<br><br>B<br>H<br>A1<br>Seating<br>plane<br>Section B - B and C - C<br>Scale: None<br>(4)<br>(4)<br>(b, b2)<br>b1, b3<br>(c)<br>c1<br>Base<br>Metal<br>Plating<br>**Pad layout**<br>MIN.<br>11.00<br>(0.43)<br>MIN.<br>9.65<br>(0.38)<br>MIN.<br>3.81<br>(0.15)<br>MIN.<br>2.32<br>(0.08)<br>17.90 (0.70)<br>15.00 (0.625)<br>2.64(0.103)<br>2.41 (0.096)|||||||||
||||E<br>(2)(3)||Detail A<br>C<br>A<br>(2)<br>H<br>2 x b<br>2 x b2||||||||||||||||||||||
||||||||||||||||||||||||||||
||||||||||||||||||||||||||||
||L1<br>)||4||||||||||||||||||(D1||||||
||||||||||||||||||||||||||||
||D||1|3|||||||||||||||||||||||
||||||||||||||||||||||||||||
|||||||||||||||||E1|||||||||||
|||B<br>e<br>2 x|B<br>||||||||||||||||||||||||
|||||||||||||||||View A<br>|||||||||||
||||||||||||||||||||||||||||
||||||||||||||||||||||||||||
||||||0.010<br>M||A<br>M|B|||± 0.004<br>B<br>M||||||||||||||||
||||||||||||Gauge<br>plane<br>to 8°||||||||B<br>H||||||||
||||||||||||||||||||||||||||
||||||||||||||||||||||||||||
||||||||||||L3||L|L4||||A|1||||||||
|||||||||||||||Detail “A”<br>Rotated 90 °CW<br>Scale: 8:1<br>|||||||||||||
|**SYMBOL**|||**MILLIMETERS**|||**INCHES**||||||**NOTES**|||**SYMBOL**||||**MILLIMETERS**|||||**INCHES**||**NOTES**|
||||**MIN.**||**MAX.**|**MIN.**|||||||||||||**MIN.**|||**MAX.**|**MIN.**||**MAX.**||
|A|||4.06||4.83|0.160|||0.190||||||D1||||6.86|||8.00|0.270||0.315|3|
|A1|||0.00||0.254|0.000|||0.010||||||E||||9.65|||10.67|0.380||0.420|2, 3|
|b|||0.51||0.99|0.020|||0.039||||||E1||||7.90|||8.80|0.311||0.346|3|
|b1|||0.51||0.89|0.020|||0.035|||4|||e||||2.54 BSC||||0.100 BSC||||
|b2|||1.14||1.78|0.045|||0.070||||||H||||14.61|||15.88|0.575||0.625||
|b3|||1.14||1.73|0.045|||0.068|||4|||L||||1.78|||2.79|0.070||0.110||
|c|||0.38||0.74|0.015|||0.029||||||L1||||-|||1.65|-||0.066|3|
|c1|||0.38||0.58|0.015|||0.023|||4|||L3||||0.25 BSC||||0.010 BSC||||
|c2|||1.14||1.65|0.045|||0.065||||||L4||||4.78|||5.28|0.188||0.208||
|D|||8.51||9.65|0.335|||0.380|||2|||||||||||||||



## **Notes** 

- (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 

> (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body 

> (3) Thermal pad contour optional within dimension E, L1, D1 and E1 

- (4) Dimension b1 and c1 apply to base metal only 

> (5) Datum A and B to be determined at datum plane H 

- (6) Controlling dimension: inch 

- (7) Outline conforms to JEDEC® outline TO-263AB 

Revision: 14-Mar-2022 

Document Number: 96683 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** 

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Vishay 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jul-2024 

Document Number: 91000 

**1** For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-3c04et07s2l-m3/sic-schottky-diode-650v-4a-to/dp/4486768)
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