VS-36MT60
Bridge Rectifier, Three Phase, 600 V, 35 A, Module, 5 Pins, 1.19 V
- Manufacturer: VISHAY
- Product type: Bridge Rectifier Diodes
- No. of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):35A; Bridge Rectifier Case Style:Module; Forward Voltage VF Max:1.19V; No. of Pins:5Pins; Operating
- SVHC: Lead (08-Jul-2021)
- No. of Pins: 5Pins
- No. of Phases: Three Phase
- Product Range: VS-36MT Series
- Forward Voltage Max: 1.19V
- Forward Surge Current: 475A
- Average Forward Current: 35A
- Bridge Rectifier Mounting: Surface Mount
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: Module
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 7.68 € |
| Current stock | 100+ |
| Lead time | 30 days |
## **VS-26MT.., VS-36MT.. Series** www.vishay.com ## Vishay Semiconductors ## **Three Phase Bridge Rectifier, 25 A, 35 A** ## **FEATURES** - Universal, 3 way terminals: push-on, wrap around or solder - High thermal conductivity package, electrically insulated case - Center hole fixing - Excellent power/volume ratio - UL E300359 approved **==> picture [21 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> D-63<br>**----- End of picture text -----**<br> - Nickel plated terminals solderable using lead (Pb)-free solder; solder alloy Sn/Ag/Cu (SAC305); solder temperature 260 °C to 275 °C - Designed and qualified for industrial and consumer level ## **PRIMARY CHARACTERISTICS** |IO|25 A, 35 A| |---|---| |VRRM|50 V to 1600 V| |Package|D-63| |Circuit configuration|Three phase bridge| - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **DESCRIPTION** A range of extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**<br>**26MT..**|**VALUES**<br>**36MT..**|**UNITS**| |IO||25|35|A| ||TC|70|60|°C| |IFSM|50 Hz|360|475|A| ||60 Hz|375|500|| |I2t|50 Hz|635|1130|A2s| ||60 Hz|580|1030|| |VRRM||50 to 1600||V| |TJ||-55 to +150||°C| ## **ELECTRICAL SPECIFICATIONS** ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---|---| |**TYPE NUMBER**|**VOLTAGE**<br>**CODE**|**VRRM, MAXIMUM REPETITIVE**<br>**PEAK REVERSE VOLTAGE**<br>**V**|**VRSM, MAXIMUM NON-REPETITIVE**<br>**PEAK REVERSE VOLTAGE**<br>**V**|**IRRM MAXIMUM**<br>**AT TJ MAXIMUM**<br>**mA**| |VS-26MT..<br>VS-36MT..|05|50|75|2| ||10|100|150|| ||20|200|275|| ||40|400|500|| ||60|600|725|| ||80|800|900|| ||100|1000|1100|| ||120|1200|1300|| ||140|1400|1500|| ||160|1600|1700|| Revision: 15-Jan-2019 Document Number: 93565 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-26MT.., VS-36MT.. Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **FORWARD CONDUCTION** |**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**|**FORWARD CONDUCTION**| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**<br>**26MT..**|**VALUES**<br>**36MT..**|**UNITS**| |Maximum DC output current at TC|IO|120° rect. conduction angle|||25|35|A| ||||||70|60|°C| |Maximum peak, one-cycle<br>non-repetitive forward current|IFSM|t = 10 ms|No voltage<br>reapplied|Initial<br>TJ= TJmaximum|360|475|A| |||t = 8.3 ms|||375|500|| |||t = 10 ms|100 % VRRM<br>reapplied||300|400|| |||t = 8.3 ms|||314|420|| |Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||635|1130|A2s| |||t = 8.3 ms|||580|1030|| |||t = 10 ms|100 % VRRM<br>reapplied||450|800|| |||t = 8.3 ms|||410|730|| |Maximum I2t for fusing|I2t|I2t for time tx= I2t xtx; 0.1tx 10 ms, VRRM= 0 V|||6360|11 300|A2s| |Low level of threshold voltage|VF(TO)1|(16.7 % xx IF(AV)< I <x IF(AV)), TJmaximum|||0.88|0.86|V| |High level of threshold voltage|VF(TO)2|(I >x IF(AV)), TJmaximum|||1.13|1.03|| |Low level forward slope resistance|rt1|(16.7 % xx IF(AV)< I <x IF(AV)), TJmaximum|||7.9|6.3|m| |High level forward slope resistance|rt2|(I >x IF(AV)), TJmaximum|||5.2|5.0|| |Maximum forward voltage drop|VFM|TJ= 25 °C, IFM= 40 Apk- per single junction|||1.26|1.19|V| |Maximum DC reverse current|IRRM|TJ= 25 °C, per junction at rated VRRM|||100||µA| |RMS isolation voltage|VINS|TJ= 25 °C, all terminal shorted; f = 50 Hz, t = 1 s|||2700||V| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**<br>**26MT**|**VALUES**<br>**36MT**|**UNITS**| |Maximum junction and storage<br>temperature range|TJ, TStg||-55 to +150||°C| |Maximum thermal resistance,<br>junction to case|RthJC|DC operation per bridge<br>(based on total power loss of bridge)|1.42|1.35|K/W| |Maximum thermal resistance,<br>case to heatsink|RthCS|Mounting surface, smooth, flat and greased|0.2|0.2|| |Approximate weight|||20||g| |Mountingtorque ± 10 %||Bridge to heatsink with screw M4|2.0||Nm| **==> picture [211 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>26MT.. Series<br>140<br>120<br>100<br>+ 120° (rect.)<br>80 ~<br>-<br>60<br>0 5 10 15 20 25 30<br>Total Output Current (A)<br>Maximum Allowable<br>Case Temperature (°C)<br>**----- End of picture text -----**<br> Fig. 1 - Current Ratings Characteristics **==> picture [202 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>26MT.. Series<br>100<br>Per junction<br>10<br>TJ = 25 °C<br>TJ = 150 °C<br>1<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Instantaneous Forward Voltage (V)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 2 - Forward Voltage Drop Characteristics Revision: 15-Jan-2019 Document Number: 93565 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-26MT.., VS-36MT.. Series** **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com ## Vishay Semiconductors **==> picture [480 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 55 55<br>50 26MT.. Series 50<br>TJ = 150 °C<br>45 45<br>40 40<br>35 35<br>30 120° (rect.) 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0 5 10 20 25 0 25 50 75 100 125 150<br>Total Output Current (A) Maximum Allowable Ambient Temperature (°C)<br>10 K/W<br>7 K/W<br>5 K/W<br>4 K/W<br>3 K/W<br>2 K/W<br>1 K/W R<br>thSA<br> = 0.7 K/W -<br>ΔR<br>Maximum Total Power Loss (W) Maximum Total Power Loss (W)<br>**----- End of picture text -----**<br> Fig. 3 - Total Power Loss Characteristics **==> picture [214 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 320<br>300 At any rated load condition and with<br>280 rated VRRM applied following surge.<br>Initial TJ = 150 °C<br>260 at 60 Hz 0.0083 s<br>240 at 50 Hz 0.0100 s<br>220<br>200<br>180<br>160<br>140<br>120<br>100 26MT.. Series<br>80<br>1 10 100<br>Number of Equal Amplitude Half Cycle<br>Current Pulses (N)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Non-Repetitive Surge Current **==> picture [210 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>Maximum non-repetitive surge current<br>360 versus pulse train duration.<br>Initial TJ = 150 °C<br>320 No voltage reapplied<br>280 Rated VRRM reapplied<br>240<br>200<br>160<br>120<br>26MT.. Series<br>80<br>0.01 0.1 1<br>Pulse Drain Duration (s)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> **==> picture [212 x 376] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>36MT.. Series<br>130<br>110<br>90<br>120° (rect.)<br>+<br>70 ~<br>-<br>50<br>0 5 10 15 20 25 30 35 40<br>Total Output Current (A)<br>Fig. 6 - Current Ratings Characteristics<br>1000<br>36MT.. Series<br>100<br>Per junction<br>10<br>TJ = 25 °C<br>TJ = 150 °C<br>1<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Instantaneous Forward Voltage (V)<br>Maximum Allowable<br>Case Temperature (°C)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Revision: 15-Jan-2019 Document Number: 93565 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-26MT.., VS-36MT.. Series** **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com ## Vishay Semiconductors **==> picture [471 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 80 80<br>36MT.. Series<br>70 T J = 150 °C 70<br>60 60<br>50 50<br>120° (rect.)<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 5 10 15 20 25 30 35 0 25 50 75 100 125 150<br>Total Output Current (A) Maximum Allowable Ambient Temperature (°C)<br>10 K/W<br>7 K/W<br>5 K/W<br>4 K/W<br>3 K/W<br>2 K/W<br>1 K/W<br>R<br>thSA<br> = 0.7 K/W - ΔR<br>Maximum Total Power Loss (W) Maximum Total Power Loss (W)<br>**----- End of picture text -----**<br> **Maximum Allowable Ambient Temperature (°C)** Fig. 8 - Total Power Loss Characteristics **==> picture [213 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 450<br>At any rated load condition and with<br>400 rated V RRM applied following surge.<br>Initial TJ = 150 °C<br>350 at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>300<br>250<br>200<br>150<br>36MT.. Series<br>100<br>1 10 100<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> **Number of Equal Amplitude Half Cycle Current Pulses (N)** Fig. 9 - Maximum Non-Repetitive Surge Current **==> picture [209 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>Maximum non-repetitive surge current<br>450 versus pulse train duration.<br>Initial TJ = 150 °C<br>400 No voltage reapplied<br>350 Rated VRRM reapplied<br>300<br>250<br>200<br>150<br>36MT.. Series<br>100<br>0.01 0.1 1<br>Pulse Drain Duration (s)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 10 - Maximum Non-Repetitive Surge Current **==> picture [410 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Steady state value:<br> 1 ( R DC o thJC = 1.42 K/W peration)<br>0.1<br>26MT.. Series<br>per bridge<br>0.01<br>.<br>0.001 .<br>0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>Fig. 11 - Thermal Impedance ZthJC Characteristics<br> - Transient Thermal<br>Impedance (K/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br> Document Number: 93565 Revision: 15-Jan-2019 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-26MT.., VS-36MT.. Series** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [410 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Steady state value:<br> 1 ( R DC o thJC = 1.35 K/W peration)<br>0.1<br>36MT.. Series<br>per bridge<br>0.01<br>.<br>0.001 .<br>0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br> - Transient Thermal<br>Impedance (K/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig. 12 - Thermal Impedance ZthJC Characteristics ## **ORDERING INFORMATION TABLE** **==> picture [332 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> Device code VS- 36 MT 160<br>1 2 3 4<br>1 - Vishay Semiconductors product<br>2 - Current rating code 26 = 25 A (average)<br>36 = 35 A (average)<br>3 - Basic part number<br>4 - Voltage code x 10 = VRRM<br>**----- End of picture text -----**<br> ## **CIRCUIT CONFIGURATION** **==> picture [9 x 3] intentionally omitted <==** **----- Start of picture text -----**<br> ~<br>**----- End of picture text -----**<br> **==> picture [97 x 58] intentionally omitted <==** **==> picture [9 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> +<br>-<br>**----- End of picture text -----**<br> ## **LINKS TO RELATED DOCUMENTS** Dimensions www.vishay.com/doc?95251 **5** Document Number: 93565 Revision: 15-Jan-2019 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **D-63** **DIMENSIONS** in millimeters (inches) **==> picture [283 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> 6.35 ± 0.05 (0.25 ± 0.002)<br>0.8 ± 0.1<br>(0.03 ± 0.0039)<br>24 ± 0.5 (0.950 ± 0.02)<br>-<br>AC3 AC2<br>AC1<br>12.25 (0.482) +<br>max.<br>Ø 5.2 (0.20)<br>22 ± 1 (0.87 ± 0.004)<br>10 ± 0.3<br>(0.39 ± 0.01)<br>16.0 ± 0.3<br>(0.63 ± 0.012)<br>24 ± 0.5 (0.950 ± 0.02)<br>28.5 ± 0.15 (1.12 ± 0.006)<br>**----- End of picture text -----**<br> **Not to scale** Revision: 09-Feb-15 Document Number: 95251 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 08-Feb-17 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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