# Standard Recovery Diode, 600 V, 35 A, Single, 1.46 V, 160 ns, 270 A ![Product image](https://novapart.co/image/farnell:2989373/) **URL**: https://novapart.co/products/VS-35APF06L-M3/standard-recovery-diode-600-v-35-a-single-146-160 **SKU**: VS-35APF06L-M3 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes **Price**: €1.0700 **Stock**: 200+ **Lead Time**: 127 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):35A; Diode Configuration:Single; Forward Voltage VF Max:1.46V; Reverse Recovery Time trr Max:160ns; Forward Surge C ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (04-Feb-2026) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Diode Case Style | TO-247AD | | Diode Configuration | Single | | Forward Voltage Max | 1.46V | | Forward Surge Current | 270A | | Reverse Recovery Time | 160ns | | Average Forward Current | 35A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 600V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2989373/) **VS-35EPF06L-M3, VS-35APF06L-M3** ~~—~~ www.vishay.com ## Vishay Semiconductors ## **Fast Soft Recovery Rectifier Diode, 35 A** ## **FEATURES** - Very low forward voltage drop and short reverse recovery time **==> picture [199 x 143] intentionally omitted <==** **----- Start of picture text -----**
2
1 1
2
3 3
TO-247AD 2L TO-247AD 3L
Base cathode Base cathode
2 2
1 3 1 3
Cathode Anode Anode Anode
VS-35EPF06L-M3 VS-35APF06L-M3
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## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|35 A| |VR|600 V| |VFat IF|1.27 V| |IFSM|320 A| |trr|60 ns| |TJmax.|150 °C| |Snap factor|0.6| |Package|TO-247AD 2L, TO-247AD 3L| |Circuit configuration|Single| - Glass passivated pellet chip junction - Designed and qualified according to JEDEC[®] - JESD 47 - Flexible solution for reliable AC power rectification - High surge, low VF rugged blocking diode for DC charging stations - AEC-Q101 qualified P/N available (VS-35EPF06LHM3, VS-35APF06LHM3) - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. ## **DESCRIPTION** The VS-35EPF06L-M3 and VS-30APF06L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**| |IF(AV)|Sinusoidal waveform|35|A| |VRRM||600|V| |IFSM||320|A| |VF|15 A, TJ= 25 °C|1.27|V| |trr|1 A, 100 A /μs|60|ns| |TJ||-40 to +150|°C| ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---| |**PART NUMBER**|**VRRM, MAXIMUM**
**PEAK REVERSE VOLTAGE**
**V**|**VRSM, MAXIMUM**
**NON-REPETITIVE PEAK REVERSE**
**VOLTAGE**
**V**|**IRRM**
**AT 150 °C**
**mA**| |VS-35EPF06L-M3|600|700|6| |VS-35APF06L-M3|600|700|| Revision: 06-Jul-2018 Document Number: 95995 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-35EPF06L-M3, VS-35APF06L-M3** Vishay Semiconductors ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum average forward current|IF(AV)|TC= 103 °C, 180° conduction half sine wave|35|A| |Maximum peak one cycle
non-repetitive surge current|IFSM|10 ms sine pulse, rated VRRMapplied|270|| |||10 ms sine pulse, no voltage reapplied|320|| |Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied|365|A2s| |||10 ms sine pulse, no voltage reapplied|515|| |Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied|5150|A2s| ## **ELECTRICAL SPECIFICATIONS** |**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**| |Maximum forward voltage drop|VFM|35 A, TJ= 25 °C||1.46|V| |Forward slope resistance|rt|TJ= 150 °C||12.5|m| |Threshold voltage|VF(TO)|||0.90|V| |Maximum reverse leakage current|IRM|TJ= 25 °C|VR= rated VRRM|0.1|mA| |||TJ= 150 °C||6|| ## **RECOVERY CHARACTERISTICS** |**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**||| |Reverse recovery time|trr|IFat 20 Apk
100 A/μs
25 °C|160|ns||| |Reverse recovery current|Irr||10|A||| |Reverse recovery charge|Qrr||1.25|μC||| |Snap factor|S|Typical|0.6|||| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum junction and storage
temperature range||TJ, TStg||-40 to +150|°C| |Maximum thermal resistance,
unction to case||RthJC|DC operation|0.6|°C/W| |Maximum thermal resistance,
junction to ambient||RthJA||40|| |Typical thermal resistance,
case to heatsink||RthCS|Mounting surface, smooth, and greased|0.25|| |Approximate weight||||6|g| |||||0.21|oz.| |Mounting torque|minimum|||6 (5)|kgf · cm
(lbf · in)| ||maximum|||12 (10)|| |Marking device|||Case style TO-247AD 2L|35EPF06L|| ||||Case style TO-247AD 3L|35APF06L|| Revision: 06-Jul-2018 Document Number: 95995 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-35EPF06L-M3, VS-35APF06L-M3** Vishay Semiconductors **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
www.vishay.com
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**==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**
150
RthJC (DC) = 0.60 °C/W
140 LAN
130
Conduction angle
120 ANSN
110
PT ANAANN EI
100 PT I\LYNNIN |
60° 120°
90
30° 90° 180°
80 H Pt i tt Et.
0 5 10 15 20 25 30 35 40
Average On-State Current (A)
C)
°
Max. Allowable Case Temperature (
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Fig. 1 - Current Rating Characteristics **==> picture [202 x 370] intentionally omitted <==** **----- Start of picture text -----**
150
RthJC (DC) = 0.60 °C/W
140
WN Z
Ø
130
ANN
Conduction Period
120
BRINN
110 AAMAS KI
100 TV AAA NS
90 ye 60° 120° DC
30° 90° 180°
80 LEE EE
0 10 20 30 40 50 60
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
70
180°
120°
60
90°
60°
50 30°
40
RMS limit T y |
30
20
Conduction angle
10
4 TJ = 150 °C
0 FF _| ||
0 10 20 30 40
Average On-State Current (A)
C)
°
Max. Allowable Case Temperature (
Max. Average On-State Power Loss (W)
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Fig. 3 - Forward Power Loss Characteristics **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**
90
180°
80 120°
LVL
90°
70
60°
30° DC
60
50 nn) (an
40 RMS limit
30 YY Z A
My. Conduction angle
20
10
TJ = 150 °C
0 YYF AneT
0 10 20 30 40 50 60
Average On-state Current (A)
Max. Average On-state Power Loss (W)
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Fig. 4 - Forward Power Loss Characteristics **==> picture [8 x 156] intentionally omitted <==** **----- Start of picture text -----**
Peak Half Sine Wave Forward Current (A)
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**==> picture [180 x 166] intentionally omitted <==** **----- Start of picture text -----**
350
At any rated load condition and with
rated VRRM applied following surge.
300
4 Initial TJ = 150 °C
at 60 Hz 0.0083 s
250 Sasi at 50 Hz 0.0100 s
200 NRE fis
SSE
150
es TT
100 EH Sot
50 =ePr Co
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
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Fig. 5 - Maximum Non-Repetitive Surge Current **==> picture [198 x 164] intentionally omitted <==** **----- Start of picture text -----**
350
Maximum non-repetitive surge current
300 vs. pulse train duration.
Initial TJ = 150 °C
250 No voltage reapplied
Rated VRRM reapplied
200
/\SE
150
100
50
Sl
0 PEiPEAT]
0.01 0.1 1 10
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
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Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 06-Jul-2018 Document Number: 95995 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-35EPF06L-M3, VS-35APF06L-M3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [483 x 593] intentionally omitted <==** **----- Start of picture text -----**
1000 4.0
IFM = 30 A
3.5 T J = 25 °C
3.0 IFM = 20 A
100
2.5
T J = 25 °C 2.0 I FM = 10 A
10 TJ = 150 °C 1.5
1.0 I FM = 5 A
0.5 I FM = 1 A
1 0
0 1 2 3 4 5 0 200 400 600 800 1000
Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20 10
TJ = 25 °C IFM = 30 A 9 T J = 150 °C
IFM = 20 A
IFM = 10 A 8 I FM = 30 A
0.15
IIFMFM = 1 A = 5 A 7 I FM = 20 A
6
0.10 5
4 IFM = 10 A
3
0.05 2 I FM = 5 A
1
IFM = 1 A
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 11 - Recovery Charge Characteristics, TJ = 150 °CJ = 150 °C = 150 °C
0.5 70
TJ = 150 °C 60 TJ = 25 °C IFM = 30 A
0.4
IFM = 30 A 50 I FM = 20 A
0.3 IFM = 20 A
IFM = 10 A 40 I FM = 10 A
IFM = 5 A
0.2 I FM = 1 A 30 I FM = 5 A
20
0.1
10 IFM = 1 A
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
- Typical Reverse
rr
Q Recovery Charge (µC)
Instantaneous Forward Current (A)
- Typical Reverse trr Recovery Time (µs) Q - Typical Reverse rr Recovery Charge (µC)
- Typical Reverse - Typical Reverse
trr Recovery Time (µs) Irr Recovery Current (A)
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Fig. 11 - Recovery Charge Characteristics, TJ = 150 °CJ = 150 °C = 150 °C Revision: 06-Jul-2018 Document Number: 95995 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-35EPF06L-M3, VS-35APF06L-M3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [225 x 179] intentionally omitted <==** **----- Start of picture text -----**
100
80 TJ = 150 °C I FM = 30 A
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
- Typical Reverse
Irr Recovery Current (A)
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**==> picture [400 x 171] intentionally omitted <==** **----- Start of picture text -----**
1
0.5
0.33 Steady state value
0.25 (DC operation)
0.17
0.1
0.08
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
- Transient Thermal Impedance (°C/W)
thJC
Z
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Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 06-Jul-2018 Document Number: 95995 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-35EPF06L-M3, VS-35APF06L-M3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**35**
**E**
**P**|**35**
**E**
**P**|**F**|**06**|**L**|**-M3**|**-M3**||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |||1||2
4
3||5|6|7|8|||| ||**1**||-||Vishay Semiconductors product|||||||| ||**2**||-||Current rating (35 = 35 A)|||||||| ||**3**||-||Circuit configuration:|||||||| ||||||E = single, 2 pins|||||||| ||||||A = single, 3 pins|||||||| ||**4**||-||Package:|||||||| |||||P = TO-247AD||||||||| ||**5**||-||Type of silicon:|||||||| ||||||F = fast recovery rectifier|||||||| ||**6**||-||Voltage code x 100|= VRRM||||06 = 600 V||| |||||||||||||| ||**7**||-||L = long leads|||||||| |||||||||||||| ||**8**||-||Environmental digit:|||||||| |||||-M3 = halogen-free, RoHS-compliant, and|||||terminations lead (Pb)-free|||| |**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)| |---|---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER T/R**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**| |VS-35EPF06L-M3|25|500||Antistatic plastic tubes| |VS-35APF06L-M3|25|500||Antistatic plastic tubes| |||||| ||**LINKS TO RELATED DOCUMENTS**|||| |Dimensions|TO-247AD 2L||www.vishay.com/doc?95536|| ||TO-247AD 3L||www.vishay.com/doc?95626|| |Part marking information|TO-247AD 2L||www.vishay.com/doc?95648|| ||TO-247AD 3L||www.vishay.com/doc?95007|| Revision: 06-Jul-2018 Document Number: 95995 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **TO-247AD 2L** ## **DIMENSIONS** in millimeters and inches **==> picture [410 x 318] intentionally omitted <==** **----- Start of picture text -----**
(3) A A
B E (6) F P (Datum B)
S A2 Ø K M D B M
(2) R/2 A F P1
D2
Q
2 x R
D D1 (4)
(2)
1, 2 3 D 4
Thermal pad
(5) L1
C (4)
L See view B A E1
0.01 M D B M
View A - A
C
2 x b2
2 x b 2 x e A1
0.10 M C A M
Plating (b1, b3) Base metal
D D
(c) c1 C C
(b, b2)
(4)
Section C - C, D - D View B
**----- End of picture text -----**
|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**
3
4||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**|| |A|4.65|5.31|0.183|0.209|||E|15.29|15.87|0.602|0.625|3| |A1|2.21|2.59|0.087|0.102|||E1|13.46|-|0.53|-|| |A2|1.50|2.49|0.059|0.098|||e|5.46 BSC||0.215 BSC||| |b|0.99|1.40|0.039|0.055|||Ø K|0.254||0.010||| |b1|0.99|1.35|0.039|0.053|||L|19.81|20.32|0.780|0.800|| |b2|1.65|2.39|0.065|0.094|||L1|3.71|4.29|0.146|0.169|| |b3|1.65|2.34|0.065|0.092|||Ø P|3.56|3.66|0.14|0.144|| |c|0.38|0.89|0.015|0.035|||Ø P1|-|6.98|-|0.275|| |c1|0.38|0.84|0.015|0.033|||Q|5.31|5.69|0.209|0.224|| |D|19.71|20.70|0.776|0.815|||R|4.52|5.49|0.178|0.216|| |D1|13.08|-|0.515|-|||S|5.51 BSC||0.217 BSC||| |D2|0.51|1.35|0.020|0.053||||||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TO-247AD 3L** ## **DIMENSIONS** in millimeters and inches ||(2)
(2) R/

2 x R
3
2 x
(5) L1
Q|(2)
(2) R/

2 x R
3
2 x
(5) L1
Q|(2)
(2) R/

2 x R
3
2 x
(5) L1
Q|B||||||D
A
A2
A
A
A1
C
T
D E
E
C
C
View B|D
A
A2
A
A
A1
C
T
D E
E
C
C
View B|A
(6)ΦP|A
(6)ΦP|A
(6)ΦP|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1|(Datum B)
Φ P1| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||2||||||||Ø K
B
D
M
M
hermal pad
D2|B
D

M||||||| ||||||||||||||||4||D||| ||||||1
2|3|||||||||||||| ||||||
b4||||||||||||||| ||||||||||||||||(4)
E1||||| |||||x b
b2
C|||||||||||||||| ||||||||||||||||||||| ||||||(b1, b3, b5)||||||||||||||| ||||0.10
M|A
C
M|||||||||||||||| ||||||||||||||||||||| ||(
Plating||||||||||||||||||| |||||c)|(b b2 b4)||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| |**SYMBOL**|**MILLIMETERS**|||||**INCHES**|||**NOTES**
3
4||**SYMBOL**|**MILLIMETERS**||||**INCHES**|||**NOTES**| ||**MIN.**|||**MAX.**||**MIN.**||**MAX.**||||**MIN.**||**MAX.**||**MIN.**||**MAX.**|| |A|4.65|||5.31||0.183||0.209|||D2|0.51||1.30||0.020||0.051|| |A1|2.21|||2.59||0.087||0.102|||E|15.29||15.87||0.602||0.625|3| |A2|1.50|||2.49||0.059||0.098|||E1|13.46||-||0.53||-|| |b|0.99|||1.40||0.039||0.055|||e|5.46 BSC||||0.215 BSC|||| |b1|0.99|||1.35||0.039||0.053|||Ø K|2.54||||0.010|||| |b2|1.65|||2.39||0.065||0.094|||L|19.81||20.32||0.780||0.800|| |b3|1.65|||2.34||0.065||0.092|||L1|3.71||4.29||0.146||0.169|| |b4|2.59|||3.43||0.102||0.135|||Ø P|3.56||3.66||0.14||0.144|| |b5|2.59|||3.38||0.102||0.133|||Ø P1|-||6.98||-||0.275|| |c|0.38|||0.89||0.015||0.035|||Q|5.31||5.69||0.209||0.224|| |c1|0.38|||0.84||0.015||0.033|||R|4.52||5.49||0.178||0.216|| |D|19.71|||20.70||0.776||0.815|||S|5.51 BSC||||0.217 BSC|||| |D1|13.08|||-||0.515||-|||||||||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95626 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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