# SCR THYRISTOR, 22A, 1.2KV, TO-208AA

![Product image](https://novapart.co/image/farnell:2418540/)

**URL**: https://novapart.co/products/VS-2N5207/scr-thyristor-22a-12kv-to-208aa
**SKU**: VS-2N5207
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €11.0300
**Stock**: 10+
**Lead Time**: 87 days (indicative)

## Description

SCR Module Type:Single SCR; Peak Repetitive Off State Voltage:1.2kV; Gate Trigger Current Max:40mA; Average Forward Current:22A; On State RMS Current:35A; Gate Trigger Voltage Max:2V

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2418540/)

**VS-2N681, VS-2N5205 Series** 

www.vishay.com 

## Vishay Semiconductors 

## **Phase Control Thyristor RMS SCRs, 25 A, 35 A** 

## **FEATURES** 

- General purpose stud mounted 

- Broad forward and reverse voltage range - through 1200 V 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

**TO-48 (TO-208AA)** 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IT(AV)|16 A, 22 A|
|IT(RMS)|25 A, 35 A|
|VDRM/VRRM|25 V, 50 V, 100 V, 150 V, 200 V, 250 V,<br>300 V, 400 V, 500 V, 600 V, 700 V, 800 V,<br>1000 V 1200 V|
|VTM|2.3 V|
|IGT|60 mA|
|TJ|-40 °C to +125 °C|
|Package|TO-48 (TO-208AA)|
|Circuit configuration|Single SCR|



|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~Ld~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~Ld~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~Ld~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~Ld~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~Ld~~|
|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**<br>**2N681-92**|**VALUES**<br>**2N5205-07**|**UNITS**|
|IT(AV)<br>~~ey~~<br>~~a~~|~~ey~~<br>~~a~~|16(1)<br>~~ey~~|22(1)<br>~~ey~~|A<br>~~ey~~|
||TC<br>~~ey~~<br>~~a~~|-65 to +65(1)<br>~~ey~~|-40 to +40<br>~~ey~~|°C<br>~~ey~~|
|IT(RMS)<br>~~a~~<br>~~Pf~~<br>~~ep~~|~~a~~<br>~~Pf~~<br>~~ep~~|25<br>~~Pf~~<br>~~ep~~|35<br>~~Pf~~<br>~~ep~~|A<br>~~Pf~~|
|ITSM<br>~~ep~~<br>~~ye~~|50 Hz<br>~~es~~<br>~~ep~~|145<br>~~es~~<br>~~ep~~|285<br>~~es~~<br>~~ep~~|A<br>~~tj~~|
||60 Hz<br>~~ep~~<br>~~ye~~|150(1)<br>~~ep~~<br>~~yetj~~|300(1)<br>~~ep~~<br>~~tj~~||
|I2t<br>~~ep~~<br>~~ye~~<br>~~a~~<br>~~ns~~<br>~~ns~~|50 Hz<br>~~ep~~<br>~~ye~~<br>~~a~~<br>|103<br>~~ep~~<br>~~yetj~~<br>|410<br>~~ep~~<br>~~tj~~|A2s<br>~~tj~~<br>~~(~~|
||60 Hz<br>~~ye~~<br>~~a~~<br>~~Gn~~<br>|94<br>~~yetj~~<br>~~I~~|375<br>~~tj~~<br>~~(~~||
|IGT<br>~~ye~~<br>~~a~~<br>~~ns~~<br>~~ns~~<br>~~ns~~|~~ye~~<br>~~a~~<br>~~Gn~~<br>~~GD~~<br>|40<br>~~ye tj~~<br>~~I~~<br>~~I~~|40<br>~~tj~~<br>~~(~~<br>~~(~~|mA<br>~~tj~~<br>~~(~~|
|dV/dt<br>~~a~~<br>~~ns~~<br>~~ns~~<br>~~ns~~<br>~~rs~~|~~a~~<br>~~Gn~~<br>~~GD~~<br>~~Gn~~<br>|-<br>~~I~~<br>~~I~~<br>~~I~~|100(1)<br>~~(~~<br>~~(~~<br>~~(S(O~~|V/μs<br>~~(~~<br>~~(S(O~~|
|dI/dt<br><br>~~ns~~<br>~~ns~~<br>~~rs~~<br>~~rs~~|~~Gn ~~<br>~~GD~~<br>~~Gn~~<br>~~Ge~~<br>|75 to 100<br> ~~I~~<br>~~I~~<br>~~I~~<br>~~nn~~|100<br>~~( ~~<br>~~(~~<br>~~(S(O~~<br>~~(~~|A/μs<br> ~~(~~<br>~~(S(O~~<br>~~(~~|
|VDRM<br><br>~~ns~~<br>~~rs~~<br>~~rs~~<br>~~ns~~|Range<br>~~GD~~<br>~~Gn~~<br>~~Ge~~<br>~~**GD**~~|25 to 800<br>~~I~~<br>~~I~~<br>~~nn~~<br>~~I~~|600 to 1200<br>~~(~~<br>~~(S(O~~<br>~~(~~<br>~~(~~|V<br>~~(S(O~~<br>~~(~~<br>~~(~~|
|VRRM<br><br>~~rs~~<br>~~rs~~<br>~~ns~~|Range<br>~~Gn~~<br>~~Ge~~<br>~~**GD**~~|25 to 800<br>~~I~~<br>~~nn~~<br>~~I~~<br>~~I~~|600 to 1200<br>~~(S(O~~<br>~~(~~<br>~~(~~<br>~~GD~~|V<br>~~(S(O~~<br>~~(~~<br>~~(~~|
|TJ<br><br>~~rs~~<br>~~ns~~|~~Ge~~<br>~~**GD**~~|-65 to +125(1)<br>~~nn ~~<br>~~I~~<br>~~I~~|-40 to +125(1)<br> ~~( ~~<br>~~(~~<br>~~GD~~|°C<br> ~~(~~<br>~~(~~|



## **Note** 

> (1) JEDEC® registered value 

Revision: 21-Sep-17 

Document Number: 93706 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-2N681, VS-2N5205 Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** 

|**VOLTAGE RATINGS(APPLIED GATE VOLTAGE ZERO OR NEGATIVE)**|**VOLTAGE RATINGS(APPLIED GATE VOLTAGE ZERO OR NEGATIVE)**|**VOLTAGE RATINGS(APPLIED GATE VOLTAGE ZERO OR NEGATIVE)**|**VOLTAGE RATINGS(APPLIED GATE VOLTAGE ZERO OR NEGATIVE)**|
|---|---|---|---|
|**TYPE NUMBER**|**VRRM/VDRM, MAXIMUM REPETITIVE PEAK**<br>**REVERSE AND OFF-STATE VOLTAGE**<br>**V**|**VRSM, MAXIMUM NON-REPETITIVE**<br>**PEAK REVERSE VOLTAGE (tp < 5 ms)**<br>**V**|**TJ**|
|VS-2N681|25|35|-65 °C to +125 °C|
|VS-2N682|50|75||
|VS-2N683|100|150||
|VS-2N684|150|200||
|VS-2N685|200|300||
|VS-2N686|250|350||
|VS-2N687|300|400||
|VS-2N688|400|500||
|VS-2N689|500|600||
|VS-2N690|600|720||
|VS-2N691|700|840||
|VS-2N692|800|960||
|VS-2N5205|800|960|-40 °C to +125 °C|
|VS-2N5206|1000|1200||
|VS-2N5207|1200|1440||



## **Note** 

- JEDEC registered values 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**<br>**2N681-92**|**VALUES**<br>**2N5205-07**|**UNITS**|
|Maximum average on-state<br>current at case temperature|IT(AV)|180° half sine wave conduction||16(1)|22(1)|A|
|||||-65 to +65(1)|-40 to +40(1)|°C|
|Maximum RMS on-state current|IT(RMS)|||25|35|A|
|Maximum peak, one-cycle<br>non-repetitive surge current|ITSM|50 Hz half cycle sine wave<br>or 6 ms rectangular pulse|Following any rated<br>load condition, and<br>with rated VRRMapplied<br>following surge|145|285|A|
|||60 Hz half cycle sine wave<br>or 5 ms rectangular pulse||150(1)|300(1)||
|||50 Hz half cycle sine wave<br>or 6 ms rectangular pulse|Same conditions as<br>above except with<br>VRRMapplied following<br>surge = 0|170|340||
|||60 Hz half cycle sine wave<br>or 5 ms rectangular pulse||180|355||
|Maximum I2t capability for fusing|I2t|t = 10 ms|Rated VRRMapplied<br>following surge,<br>initial TJ= 125 °C|103|410|A2s|
|||t = 8.3 ms||94|375||
|Maximum I2t capability for<br>individual device fusing||t = 10 ms|VRRM= 0 following<br>surge, initial TJ= 125 °C|145|580||
|||t = 8.3 ms||135|530||
|Maximum I2t capability for<br>individual device fusing|I2t(2)|t = 0.1 ms to 10 ms, initial TJ< 125 °C<br>VRRMapplied followingsurge = 0||1450|5800|A2s|
|Maximum peak on-state voltage|VTM|TJ= 25 °C, IT(AV)= 16 A (50 A peak) 2N681,<br>IT(AV)= 22 A (70 A peak) 2N5204||2(1)|2.3(1)|V|
|Maximum holding current|IH|Anode supply 24 V, initial IT= 1.0 A||20 at 25 °C<br>(typical)|200(1)at<br>-40 °C|mA|



## **Notes** 

- (1) JEDEC registered value 

- (2) I2t for time tx = I2  t ·  tx 

Revision: 21-Sep-17 

Document Number: 93706 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-2N681, VS-2N5205 Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **SWITCHING** 

|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|
|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**<br>**2N681-92**|**VALUES**<br>**2N5205-07**|**UNITS**|
|Maximum non-repetitive<br>rate of rise of turned-on<br>current|VDM= 25 V to 600 V|dI/dt|TC= 125 °C, VDM= Rated VDRM,<br>ITM= 2 x dI/dt, gate pulse = 20 V,<br>15, tp= 6 μs, tr= 0.1 μs maximum<br>Per JEDEC standard RS-397,5.2.2.6|100|-|A/μs|
||VDM= 700 V to 800 V|||75|-||
||||TC= 125 °C, VDM= 600 V, ITM= 200 A at<br>400 Hz maximum, gate pulse = 20 V, 15,<br>tp= 6 μs, tr= 0.1 μs maximum<br>Per JEDEC standard RS-397, 5.2.2.6|-|100||
|Typical delay time||td|TC= 25 °C, VDM= Rated VDRM, ITM= 10 A<br>DC resistive circuit, gate pulse = 10 V,<br>40source, tp= 6μs, tr= 0.1μs|1|1|μs|



## **BLOCKING** 

|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**||**VALUES**<br>**2N681-92**|**VALUES**<br>**2N5205-07**|**UNITS**|
|Minimum critical rate of<br>rise of off-state voltage||dV/dt|TJ= 125 °C, exponential<br>to 100 % rated VDRM|Gate open<br>circuited|100<br>(typical)|100(1)|V/μs|
||||TJ= 125 °C, exponential<br>to 67 % rated VDRM||250<br>(typical)|250||
|Maximum reverse<br>leakage current|VRRM, VDRM= 400 V|IDRM,<br>IRRM|TJ= 125 °C||3.5|-|mA|
||VRRM,VDRM= 500 V||||3.5|-||
||VRRM, VDRM= 600 V||||2.5|3.3||
||VRRM, VDRM= 700 V||||2.2|-||
||VRRM,VDRM= 800 V||||2|2.5||
||VRRM, VDRM= 1000 V||||-|2||
||VRRM, VDRM= 1200 V||||-|1.7||



## **Note** 

> (1) JEDEC registered value 

## **TRIGGERING** 

|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**<br>**2N681-92**|**VALUES**<br>**2N5205-07**|**UNITS**|
|Maximum peak gate power|PGM|tp< 5 ms for 2N681 series;<br>tp< 500μs for 2N5204 series||5(1)|60(1)|W|
|Maximum averagegatepower|PG(AV)|||0.5(1)|0.5(1)||
|Maximumpeakpositivegate current|+IGM|||2(1)|2|A|
|Maximumpeakpositivegate voltage|+VGM|||10(1)|-|V|
|Maximumpeak negativegate voltage|-VGM|||5(1)|5(1)||
|Maximum required DC gate<br>current to trigger|IGT|TC= min.<br>rated value|Maximum required gate trigger current<br>is the lowest value which will trigger all<br>units with + 6 V anode to cathode|80(1)|80(1)|mA|
|||TC= 25 °C||40|40||
|||TC= 125 °C||18.5|20||
|Typical DCgate current to trigger||TC= 25 °C, + 6 V anode to cathode||30|30||
|Maximum required DC gate<br>voltage to trigger|VGT|TC= -65 °C|Maximum required gate trigger voltage<br>is the lowest value which will trigger all<br>units with + 6 V anode to cathode|3(1)|3(1)|V|
|||TC= 25 °C||2|2||
|Typical DCgate voltage to trigger||TC= 25 °C,+ 6 V anode to cathode||1.5|1.5||
|Maximum DC gate voltage<br>not to trigger|VGD|TC= 125 °C|Maximum gate voltage not to trigger is<br>the maximum value which will not<br>trigger any unit with rated VDRManode<br>to cathode|0.25(1)|0.25(1)|V|



## **Note** 

> (1) JEDEC registered value 

**3** 

Revision: 21-Sep-17 

Document Number: 93706 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-2N681, VS-2N5205 Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **THERMAL AND MECHANICAL SPECIFICATIONS** 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**<br>**2N681-92**|**VALUES**<br>**2N5205-07**|**UNITS**|
|Operating junction and<br>storage temperature range||TJ, TStg||-65 to 125(1)|-40 to 125(1)|°C|
|Maximum internal thermal resistance,<br>junction to case||<br>RthJC|DC operation|1.5|1.5(1)|°C/W|
|Typical thermal resistance,<br>case to sink||RthCS|Mounting surface, smooth, flat and greased|0.35|0.35||
|Mounting torque<br>± 10 %|to nut||Lubricated threads<br>(Non-lubricated threads)|20 (27.5)||lbf · in|
|||||0.23 (0.32)||kgf · cm|
|||||2.3 (3.1)||N · m|
||to device||Lubricated threads|25||lbf · in|
|||||0.29||kgf · cm|
|||||2.8||N · m|
|Approximate weight||||14|14|g|
|||||0.49|0.5|oz.|
|Case style||||TO-48 (TO-208AA)|||



**Note** 

> (1) JEDEC registered value 

**==> picture [207 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>160<br>Ø<br>140 Conduction Period<br>Sinusoidal Current Waveform<br>120 TJ = 125 °C<br>100<br>80<br>60<br>+180°<br>40 +30° +60° +90° +120° DC<br>20<br>0<br>0      2      4      6      8     10     12     14     16     18     20     22     24<br>Average On-State Current Over Full Cycle (A)<br>Fig. 1 - Maximum Allowable Case Temperature<br>vs. Average On-State Current,<br>2N681 Series<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200<br>10 [2]<br>4<br>10<br>4<br>T J = 125 °C<br>1.0 T J  = 25 °C<br>4<br>10 [-1]<br>0 1 2 3 4 5 6 7<br>Instantaneous On-State Voltage (V)<br>Instantaneous On-State Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2 - Maximum On-State Voltage vs. Current,<br>2N681 Series<br>**----- End of picture text -----**<br>


Revision: 21-Sep-17 

Document Number: 93706 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-2N681, VS-2N5205 Series** 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## Vishay Semiconductors 

**==> picture [476 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
70 10<br>STJin = 125 °Cusoidal  +60° +120° DC 9 Maximum Allowable Instantaneous Gate<br>60<br>Current  +30° +90° +180° 8 Power Dissipation<br>Waveform 5.0 W<br>50 7<br>Controlled 6<br>40 Rectifier Area of Certain Triggering<br>Turned 5<br>30 Area of All Possible<br>Fully On 4<br>Triggering Points<br>20 3<br>Ø<br>2<br>10 Conduction Angle<br>1<br>0 0<br>0 4       8 12     16     20     24     28    32     36 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Average On-State Current Over Full Cycle (A) Instantaneous Gate Current (A)<br>Fig. 3 - Maximum Low Level On-State Power Loss vs.  Fig. 5 - Gate Characteristics,<br>Current (Sinusoidal Current Waveform),  2N681 Series<br>2N681 Series<br>10 [4]<br>4 Sinusoidal Current WaveformTJ = 125 °C +180° DC 3<br>10 [3] Controlled Rectifier +120°  -65 °C<br>Turned Fully On +90°<br>4 +60 °<br>+30° 2<br>10 [2] 25 °C<br>4<br>1<br>10<br>125 °C<br>4 Ø<br>Conduction Angle VGD (Max.) = 0.25 V<br>1.0 0<br>1.0 4 10 4 10 [2] 4 10 [3] 0        25 50 75 100 125<br>Average On-State Current Over Full Cycle (A)              Gate Current (mA)<br>Over Full Cycle (W)<br> Average Forward Power Loss  Instantaneous Gate Voltage (V)<br>Forward Power Loss<br> Gate Voltage (V)<br>Over Full Cycle (W)<br>-Average<br>IF<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum High Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), 

Fig. 5a - Area of All Possible Triggering Points vs. Temperature, 2N681 Series 

2N681 Series 

**==> picture [370 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [-1] 4 1.0 4 10 4 10 [2] 4 10 [3] 4 10 [4]<br>10 [1]<br>Free Convection<br>4 Forced Convection at 1000 LFM<br>1.0 Infnite Heatsink 1.0<br> Mounted on Infnite Heatsink<br>4 and 4" x 4" x 1/16" Copper Fin 4<br>Long Time Durations<br>10 [-1] 10 [-1]<br>4 4<br>Short Time Durations<br>10 [-2] 10 [-2]<br>10 [-6] 4 10 [-5] 4 10 [-4] 4 10 [-3] 4 10 [-2] 4 10 [-1]<br>t - Square Wave Pulse Duration (s)<br>Transient Thermal Impedance (°C/W)<br>-<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration, 

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**----- Start of picture text -----**<br>
2N681 Series<br>**----- End of picture text -----**<br>


Revision: 21-Sep-17 

Document Number: 93706 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-2N681, VS-2N5205 Series** 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

**==> picture [212 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
At Any Maximum Rated Load Condition<br>150 And With Rated V RRM  Applied Following Surge<br>100 60 Hz<br>50 Hz<br>50<br>  0<br>0 2 4 6 8 10 20 40 60<br>Number Of Equal Amplitude<br>Half Cycle Current Pulses (N)<br>Fig. 7 - Maximum Non-Repetitive Surge Current vs.<br>Number of Current Pulses,<br> 2N681 Series<br>Peak Half Sine Wave On-State Current (A)<br>**----- End of picture text -----**<br>


**==> picture [207 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
140<br>120<br>Ø<br>Conduction Period<br>100 Sinusoidal Current Waveform<br>T J  = 125 °C<br>80<br>+30° DC<br>60 +60°<br>+90°<br>+120°<br>40 +180°<br>20<br>0<br>0 4 8 12 16 20 24 28 32 36 40<br>Maximum Allowable Case Temperature (°C) Average On-State Current Over Full Cycle (A)<br>**----- End of picture text -----**<br>


Fig. 8 - Maximum Allowable Case Temperature vs. Average On-State Current (Sinusoidal Current Waveform), 2N5205 Series 

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**----- Start of picture text -----**<br>
140<br>120<br>Ø<br>Conduction Period<br>100 Rectangular Current<br>Waveform TJ = 125 °C<br>80<br>60<br>40<br>20 +60°+90° +180 ° DC<br>+120°<br>0<br>0 4 8 12 16 20 24 28 32 36 40<br>Average On-State Current Over Full Cycle (A)<br>Fig. 9 - Maximum Allowable Case Temperature vs.<br>Average On-State Current (Rectangular Current Waveform),<br>2N5205 Series<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
90<br>80 DC<br>70 +30°<br>+60°<br>60 +90°<br>+120°<br>50 +180°<br>40<br>30 Ø<br>Conduction Angle<br>20 Sinusoidal Current Waveform<br>10 TJ = 125 °C<br>Controlled Rectifier Turned Fully On<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>Over Full Cycle (W)<br> Average Forward Power Loss<br>**----- End of picture text -----**<br>


**Average On-State Current Over Full Cycle (A)** 

Fig. 10 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), 2N5205 Series 

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10 [2] 10 [4]<br>+30°<br>5 +60° +30° 5<br>+90° +60°<br>2 +90° +120° 2<br>+180°<br>10 +120 ° DC 10 [3]<br>+180°<br>5 DC TJ = 125 °C 5<br>Ø<br>2 Conduction Angle 2<br>Controlled Rectifier Sinusoidal Current<br>Turned Fully On Waveform<br>1.0 10 [2]<br>1.0 2 5 10 2 5 10 [2] 2 5 10 [3]<br>Average On-State Current Over Full Cycle (A)<br>Fig. 11 - Maximum High-Level On-State Power Loss vs.<br>Average On-State Current (Sinusoidal Current Waveform),<br>2N5205 Series<br>90<br>80<br>70<br>+60°<br>60 +90° DC<br>+120°<br>50 +180°<br>40<br>30 Ø<br>Conduction Period<br>20 Rectangular Current Waveform<br>10 TJ = 125 °C<br>Controlled Rectifier Turned Fully On<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>Average On-State Current Over Full Cycle (A)<br>Forward Power Loss<br>Over Full Cycle (W)<br>-Average<br>IF<br>Over Full Cycle (W)<br> Average Forward Power Loss<br>**----- End of picture text -----**<br>


Fig. 11 - Maximum High-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), 2N5205 Series 

Fig. 12 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), 2N5205 Series 

Revision: 21-Sep-17 

Document Number: 93706 

**6** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-2N681, VS-2N5205 Series** 

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www.vishay.com<br>**----- End of picture text -----**<br>


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10 [2] 10 [4]<br>5 +60° 5<br>+90°<br>+60°<br>2 +90° +120° 2<br>+180°<br>10 +120 ° DC 10 [3]<br>+180°<br>DC<br>5 5<br>2 Conduction PeriodØ 2<br>Controlled Rectifier<br>1.0 Turned Fully On TJ = 125 °C 10 [2]<br>1.0 2 5 10 2 5 10 [2] 2 5 10 [3]<br>Forward Power Loss<br>Over Full Cycle (W)<br>-Average<br>IF<br>**----- End of picture text -----**<br>


**Average On-State Current Over Full Cycle (A)** 

Fig. 13 - Maximum High-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), 2N5205 Series 

## Vishay Semiconductors 

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10 [3]<br>4<br>10 [2]<br>4<br>10<br>TJ = 125 °C<br>4 T J  = 25  ° C<br>1.0<br>0 1 2 3 4 5 6 7<br>Instantaneous On-State Voltage (V)<br>Fig. 14 - Maximum Instantaneous On-State Voltage vs.<br>Instantaneous On-State Current,<br>2N5205 Series<br>Instantaneous On-State Current (A)<br>**----- End of picture text -----**<br>


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10 [-1] 2 5 1.0 2 5 10 2 5 10 [2] 2 5 10 [3] 2 5 10 [4]<br>10 [1] 10<br>5 5<br>2 Steady State Value = 1.5 °C/W 2<br>1.0 1.0<br>5 Long Time Durations 5<br>2 2<br>10 [-1] 10 [-1]<br>5 Short Time Durations 5<br>2 2<br>10 [-2] 10 [-2]<br>10 [-6] 2 5 10 [-5] 2 5 10 [-4] 2 5 10 [-3] 2 5 10 [-2] 2 5 10 [-1]<br>t - Square Wave Pulse Duration (s)<br>Fig. 15 - Maximum Transient Thermal Resistance,<br>Junction to Case vs. Pulse Duration,<br>2N5205 Series<br>LINKS TO RELATED DOCUMENTS<br>Dimensions www.vishay.com/doc?95333<br>Transient Thermal Impedance (°C/W)<br>-<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Revision: 21-Sep-17 

Document Number: 93706 

**7** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-2N5207/scr-thyristor-22a-12kv-to-208aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-2n5207/scr-thyristor-22a-1-2kv-to-208aa/dp/2418540)
---

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