# Standard Recovery Diode, 1.2 kV, 20 A, Single, 1.1 V, 300 A ![Product image](https://novapart.co/image/farnell:2889269/) **URL**: https://novapart.co/products/VS-20ETS12S-M3/standard-recovery-diode-12-kv-20-a-single-11-v-300 **SKU**: VS-20ETS12S-M3 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes **Price**: €1.0200 **Stock**: 1000+ **Lead Time**: 148 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):20A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Curr ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (04-Feb-2026) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Diode Case Style | TO-263AB (D2PAK) | | Diode Configuration | Single | | Forward Voltage Max | 1.1V | | Forward Surge Current | 300A | | Reverse Recovery Time | - | | Average Forward Current | 20A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 1.2kV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2889269/) ## **VS-20ETS08S-M3, VS-20ETS12S-M3 Series** www.vishay.com ## Vishay Semiconductors ## **High Voltage Surface Mount Input Rectifier Diode, 20 A** ## **FEATURES** **==> picture [208 x 80] intentionally omitted <==** **----- Start of picture text -----**
Base
cathode
2
2
1
1 3
3 Anode Anode
**----- End of picture text -----**
- Glass passivated pellet chip junction - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Designed and qualified according to JEDEC[®] -JESD 47 - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 **==> picture [73 x 10] intentionally omitted <==** **----- Start of picture text -----**
D [2] PAK (TO-263AB)
**----- End of picture text -----**
## **APPLICATIONS** ## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|20 A| |VR|800 V, 1200 V| |VFat IF|1.1 V| |IFSM|300 A| |TJmax.|150 °C| |Package|D2PAK (TO-263AB)| |Circuit configuration|Single| - Input rectification - Vishay Semiconductors switches and output rectifiers which are available in identical package outlines ## **DESCRIPTION** The VS-20ETS...S-M3 rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. ## **OUTPUT CURRENT IN TYPICAL APPLICATIONS** |**APPLICATIONS**|**SINGLE-PHASE BRIDGE**|**THREE-PHASE BRIDGE**|**UNITS**| |---|---|---|---| |Capacitive input filter TA= 55 °C, TJ= 125 °C
common heatsink of 1 °C/W|16.3|21|A| ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**| |IF(AV)|Sinusoidal waveform|20|A| |VRRM||800/1200|V| |IFSM||300|A| |VF|20 A, TJ= 25 °C|1.1|V| |TJ||-40 to +150|°C| ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---| |**PART NUMBER**|**VRRM, MAXIMUM PEAK**
**REVERSE VOLTAGE**
**V**|**VRSM, MAXIMUM**
**NON-REPETITIVE PEAK REVERSE**
**VOLTAGE**
**V**|**IRRM AT 150 °C**
**mA**| |VS-20ETS08S-M3|800|900|1| |VS-20ETS12S-M3|1200|1300|| ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum average forward current|IF(AV)|TC= 105 °C, 180° conduction half sine wave|20|A| |Maximum peak one cycle
non-repetitive surge current|IFSM|10 ms sine pulse, rated VRRMapplied|250|| |||10 ms sine pulse, no voltage reapplied|300|| |Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied|316|A2s| |||10 ms sine pulse, no voltage reapplied|442|| |Maximum I2√t for fusing|I2√t|t = 0.1 ms to 10 ms, no voltage reapplied|4420|A2√s| Revision: 02-Feb-2024 **1** Document Number: 94889 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ## **VS-20ETS08S-M3, VS-20ETS12S-M3 Series** www.vishay.com ## Vishay Semiconductors ## **ELECTRICAL SPECIFICATIONS** |**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**| |Maximum forward voltage drop|VFM|20 A, TJ= 25 °C||1.1|V| |Forward slope resistance|rt|TJ= 150 °C||10.4|mΩ| |Threshold voltage|VF(TO)|||0.85|V| |Maximum reverse leakage current|IRM|TJ= 25 °C|VR= Rated VRRM|0.1|mA| |||TJ= 150 °C||1.0|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Maximum junction and storage temperature range||TJ, TStg||-40 to +150|°C| |Maximum thermal resistance,
junction to case||RthJC|DC operation|1.3|°C/W| |Maximum thermal resistance,
junction to ambient||RthJA (1)|For D2PAK version|62|| |Typical thermal resistance,
case to heatsink||RthCS|Mounting surface, smooth, and greased|0.5|| |Approximate weight||||2|g| |||||0.07|oz.| |Mounting torque|minimum
maximum|||6.0 (5.0)|kgf · cm
(lbf · in)| |||||12 (10)|| |Marking device|||Case style D2PAK (TO-263AB)|20ETS08S|| |||||20ETS12S|| ## **Note** > (1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Ø
Conduction angle
30° 60° 90° 120°
180°
0 2 4 6 8 10 12 14 16 18 20 22
Average Forward Current (A)
150
140
130
120
110
100
10
Temperature (°C)
Maximum Allowable Case
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**==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Ø
Conduction period
30°
60°
90°
120°
180° DC
0 5 10 15 20 25 30 35
Average Forward Current (A)
150
140
130
120
110
100
90
Temperature (°C)
Maximum Allowable Case
**----- End of picture text -----**
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 02-Feb-2024 Document Number: 94889 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-20ETS08S-M3, VS-20ETS12S-M3 Series** ## www.vishay.com ## Vishay Semiconductors **==> picture [468 x 375] intentionally omitted <==** **----- Start of picture text -----**
180° At any rated load condition and with
120° rated V RRM applied following surge.
90° Initial TJ = 150 °C
60° at 60 Hz 0.0083 s
30° at 50 Hz 0.0100 s
RMS limit
Ø
Conduction angle
20ETS.. Series
TJ = 150 °C 20ETS.. Series
0 4 8 12 16 20 24 1 10 100
Average Forward Current (A) Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current
DC Maximum non-repetitive surge current
180° versus pulse train duration.
120° Initial TJ = 150 °C
90° No voltage reapplied
60° Rated V RRM reapplied
30°
RMS limit
Ø
Conduction period
20ETS.. Series
TJ = 150 °CJ = 150 °C = 150 °C 20ETS.. Series
0 5 10 15 20 25 0.01 0.1 1
Average Forward Current (A) Pulse Train Duration (s)
30 300
25
250
20
200
15
150
10
100
5
0 50
35 300
30
250
25
200
20
15
150
10
100
5
0 50
Power Loss (W)
Peak Half Sine Wave Forward Current (A)
Maximum Average Forward
Power Loss (W)
Peak Half Sine Wave Forward Current (A)
Maximum Average Forward
**----- End of picture text -----**
Fig. 5 - Maximum Non-Repetitive Surge Current **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
20ETS.. Series
TJ = 150 °CJ = 150 °C = 150 °C
0 5 10 15 20 25
Average Forward Current (A)
35
30
25
20
15
10
5
0
Power Loss (W)
Maximum Average Forward
**----- End of picture text -----**
Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current **==> picture [201 x 164] intentionally omitted <==** **----- Start of picture text -----**
T J = 25°C
TJ = 150°C
20ETS.. Series
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forwad Voltage (V)
1000
100
10
Instantaneous Forward Current (A) 1
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Fig. 7 - Forward Voltage Drop Characteristics Revision: 02-Feb-2024 Document Number: 94889 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-20ETS08S-M3, VS-20ETS12S-M3 Series** www.vishay.com ## Vishay Semiconductors **==> picture [405 x 163] intentionally omitted <==** **----- Start of picture text -----**
10
Steady state value
(DC operation)
1
D = 0.50
0.1 D = 0.33
D = 0.25
D = 0.17
Single pulse D = 0.08 20ETS.. Series
0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
- Transient Thermal
Impedance (°C/W)
thJC
Z
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Fig. 8 - Thermal Impedance ZthJC Characteristics ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**|||**20**
**E**
**T**
**S**|**20**
**E**
**T**
**S**|**12**|**S**|**TRL**|**-M3**|**-M3**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||1|||5
3
2
4||6|7|8|9|||| ||**1**||-||Vishay Semiconductors product||||||||| ||**2**||-||Current rating (20 = 20|A)|||||||| ||**3**||-||Circuit configuration||||||||| ||||||E = single||||||||| ||**4**||-||Package:||||||||| ||||||T = D2PAK (TO-263AB)||||||||| ||**5**||-||Type of silicon:||||||||| ||||||S = standard recovery rectifier||||||||| ||**6**
**7**||-
-||S = surface mountable
Voltage code x 100 = VRRM||||08 = 800 V
12 = 1200 V||||| ||**8**||-||None = tube||||||||| ||||||TRL = tape and reel (left oriented)||||||||| ||||||TRR = tape and reel (right oriented)||||||||| ||**9**||-||-M3 = halogen-free, RoHS-compliant, and||||terminations lead (Pb)-free||||| Revision: 02-Feb-2024 Document Number: 94889 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ## **VS-20ETS08S-M3, VS-20ETS12S-M3 Series** www.vishay.com ## Vishay Semiconductors |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---| |**PREFERRED P/N**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**| |VS-20ETS08S-M3|50|Antistatic plastic tube| |VS-20ETS08STRR-M3|800|13" diameter reel| |VS-20ETS08STRL-M3|800|13" diameter reel| |VS-20ETS12S-M3|50|Antistatic plastic tube| |VS-20ETS12STRR-M3|800|13" diameter reel| |VS-20ETS12STRL-M3|800|13" diameter reel| |**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|| |---|---|---| |Dimensions||www.vishay.com/doc?96164| |Part markinginformation||www.vishay.com/doc?95444| |Packaginginformation||www.vishay.com/doc?96424| |SPICE model||www.vishay.com/doc?97266| Revision: 02-Feb-2024 Document Number: 94889 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **D[2] PAK** ## **DIMENSIONS** in millimeters and inches **==> picture [496 x 342] intentionally omitted <==** **----- Start of picture text -----**
Conforms to JEDEC [®] outline D [2] PAK (SMD-220) B
A Pad layout
(2)(3) A (E)
c2 11.00
E MIN.
(0.43)
A
(3) L1 4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D 17.90 (0.70)
H 15.00 (0.625)
(2)
1 2 3
3.81
MIN.
L2 (0.15)
B B 2.32
MIN.
(0.08)
A
2.64 (0.103)
2 x b2 C E1 (3) 2.41 (0.096)
c
2 x b View A - A
0.010 M A M B ± 0.004 M B
2 x e
Base
Plating (4) Metal
H b1, b3
Gauge
plane
(c) c1 (4)
0° to 8° B
L Seating
plane
L3 A1
(b, b2)
Lead tip L4 Section B - B and C - C
Detail “A” Scale: None
Rotated 90 °CW
Scale: 8:1
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|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**|| |A|4.06|4.83|0.160|0.190|||D1|6.86|8.00|0.270|0.315|3| |A1|0.00|0.254|0.000|0.010|||E|9.65|10.67|0.380|0.420|2, 3| |b|0.51|0.99|0.020|0.039|||E1|7.90|8.80|0.311|0.346|3| |b1|0.51|0.89|0.020|0.035|4||e|2.54 BSC||0.100 BSC||| |b2|1.14|1.78|0.045|0.070|||H|14.61|15.88|0.575|0.625|| |b3|1.14|1.73|0.045|0.068|4||L|1.78|2.79|0.070|0.110|| |c|0.38|0.74|0.015|0.029|||L1|-|1.65|-|0.066|3| |c1|0.38|0.58|0.015|0.023|4||L2|1.27|1.78|0.050|0.070|| |c2|1.14|1.65|0.045|0.065|||L3|0.25 BSC||0.010 BSC||| |D|8.51|9.65|0.335|0.380|2||L4|4.78|5.28|0.188|0.208|| ## **Notes** - (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 - (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body - (3) Thermal pad contour optional within dimension E, L1, D1 and E1 - (4) Dimension b1 and c1 apply to base metal only - (5) Datum A and B to be determined at datum plane H - (6) Controlling dimension: inches - (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 **1** Document Number: 96164 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2024 Document Number: 91000 **1** For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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