# Standard Recovery Diode, 1.2 kV, 20 A, Single, 1.31 V, 400 ns, 320 A

![Product image](https://novapart.co/image/farnell:2909617/)

**URL**: https://novapart.co/products/VS-20ETF12-M3/standard-recovery-diode-12-kv-20-a-single-131-v
**SKU**: VS-20ETF12-M3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €1.3000
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):20A; Diode Configuration:Single; Forward Voltage VF Max:1.31V; Reverse Recovery Time trr Max:400ns; Forward Surge

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (04-Feb-2026) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 1.31V |
| Forward Surge Current | 320A |
| Reverse Recovery Time | 400ns |
| Average Forward Current | 20A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2909617/)

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VS-20ETF...-M3 Series<br>www.vishay.com Vishay Semiconductors<br>ae a<br>Fast Soft Recovery Rectifier Diode, 20 A<br>FEATURES<br>Base<br>2 cathode • Glass passivated pellet chip junction<br>“ 2 • 150 °C max operating junction temperature RoHSfy)<br>• Low forward voltage drop and short reverse<br>recovery time<br>1 1 3 • Designed  and  qualified  according  to<br>3 Cathode Anode JEDEC [®] -JESD 47<br>**----- End of picture text -----**<br>


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3<br>**----- End of picture text -----**<br>


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TO-220AC 2L<br>**----- End of picture text -----**<br>


- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

**LINKS TO ADDITIONAL RESOURCES** 3D Models 

## **APPLICATIONS** 

These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. 

## **DESCRIPTION** 

## **PRIMARY CHARACTERISTICS** 

The VS-20ETF... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|20 A|
|VR|800 V, 1000 V, 1200 V|
|VFat IF|1.31 V|
|IFSM|320 A|
|trr|95 ns|
|TJmax.|150 °C|
|Snap factor|0.6|
|Package|TO-220AC 2L|
|Circuit configuration|Single|



The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. 

## **MECHANICAL DATA** 

**Case:** TO-220AC 2L 

Molding compound meets UL 94 V-0 flammability rating **Terminals:** matte tin plated leads, solderable per J-STD-002 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**SYMBOL**|**CHARACTERISTICS**|**VALUES**|**UNITS**|
|VRRM||800 to 1200|V|
|IF(AV)|Sinusoidal waveform|20|A|
|IFSM||320||
|trr|1 A, 100 A/μs|95|ns|
|VF|20 A, TJ= 25 °C|1.31|V|
|TJ|Range|-40 to +150|°C|



## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|
|**PART NUMBER**|**VRRM, MAXIMUM PEAK**<br>**REVERSE VOLTAGE**<br>**V**|**VRSM, MAXIMUM NON-REPETITIVE**<br>**PEAK REVERSE VOLTAGE**<br>**V**|**IRRM**<br>**AT 150 °C**<br>**mA**|
|VS-20ETF08-M3|800|900|6|
|VS-20ETF10-M3|1000|1100||
|VS-20ETF12-M3|1200|1300||



## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum average forward current|IF(AV)|TC= 113 °C, 180° conduction half sine wave|20|A|
|Maximum peak one cycle<br>non-repetitive surge current|IFSM|10 ms sine pulse, rated VRRMapplied|270||
|||10 ms sine pulse, no voltage reapplied|320||
|Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied|365|A2s|
|||10 ms sine pulse, no voltage reapplied|515||
|Maximum I2√t for fusing|I2√t|t = 0.1 ms to 10 ms, no voltage reapplied|5150|A2√s|



Revision: 29-Nov-2021 

**1** 

Document Number: 96214 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **VS-20ETF...-M3 Series** 

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** 

|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum forward voltage drop|VFM|20 A, TJ= 25 °C||1.31|V|
|Forward slope resistance|rt|TJ= 150 °C||11.88|mΩ|
|Threshold voltage|VF(TO)|||0.93|V|
|Maximum reverse leakage current|IRM|TJ= 25 °C|VR= Rated VRRM|0.1|mA|
|||TJ= 150 °C||6||



## **RECOVERY CHARACTERISTICS** 

|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|**RECOVERY CHARACTERISTICS**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|IFM<br>trr<br>dir<br>dt<br>IRM(REC)<br>Qrr<br>t<br>ta<br>tb|
|Reverse recovery time|trr|IFat 20 Apk<br>25 A/μs<br>25 °C|400|ns||
|Reverse recovery current|Irr||6.1|A||
|Reverse recovery charge|Qrr||1.7|μC||
|Snap factor|S|Typical|0.6|||



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum junction and storage<br>temperature range||TJ, TStg||-40 to +150|°C|
|Maximum thermal resistance,<br>junction to case||RthJC|DC operation|0.9|°C/W|
|Maximum thermal resistance,<br>junction to ambient||RthJA||62||
|Typical thermal resistance,<br>case to heatsink||RthCS|Mounting surface, smooth and greased|0.5||
|Approximate weight||||2|g|
|||||0.07|oz.|
|Mounting torque|minimum|||6 (5)|kgf · cm<br>(lbf · in)|
||maximum|||12 (10)||
|Marking device|||Case style TO-220AC 2L|20ETF08<br>20ETF10<br>20ETF12||



Revision: 29-Nov-2021 

Document Number: 96214 

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**VS-20ETF...-M3 Series** 

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## Vishay Semiconductors 

**==> picture [468 x 580] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 35<br>20ETF.. Series 180°<br>RthJC (DC) = 0.9 K/W 30 120 °<br>140 90°<br>60°<br>25<br>30°<br>130 Ø 20<br>Conduction angle RMS limit<br>15<br>120<br>30° Ø<br>10<br>60° Conduction period<br>110 90°<br>5 20ETF.. Series<br>120°<br>180° TJ = 150 °C<br>100 0<br>0 5 10 15 20 25 0 5 10 15 20 25<br>Average Forward Current (A) Average Forward Current (A)<br>Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics<br>150 300<br>20ETF.. Series 280 At any rated load condition and with<br>140 RthJC (DC) = 0.9 K/W 260 rated Vrrm applied following surge.Initial Tj = 150 °C<br>240 at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>Ø 220<br>130 Conduction period 200<br>180<br>120 160<br>140<br>60° 120<br>110 90°<br>30° 100<br>120° VS-20ETF.. Series<br>180° DC 80<br>100 60<br>0 5 10 15 20 25 30 35 1 10 100<br>Average Forward Current (A) Number of Equal Amplitude Half Cycle<br>Current Pulses (N)<br>Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current<br>35 350<br>180° Maximum non-repetitive surge current<br>30 120 ° 300 versus pulse train duration.<br>90° Initial Tj = Tj max.<br>25 60° 250 No voltage reapplied<br>30° Rated Vrrm reapplied<br>20 RMS limit 200<br>15 150<br>10 Ø 100<br>Conduction angle<br>5 20ETF.. Series 50<br>TJ = 150 °C VS-20ETF.. Series<br>0 0<br>0 5 10 15 20 25 0.01 0.1 1 10<br>Average Forward Current (A) Pulse Train Duration (s)<br>Temperature (°C) Power Loss (W)<br>Maximum Allowable Case<br>Maximum Average Forward<br>Temperature (°C)<br>Peak Half Sine Wave Forward Current (A)<br>Maximum Allowable Case<br>Power Loss (W)<br>Peak Half Sine Wave Forward Current (A)<br>Maximum Average Forward<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

Fig. 6 - Maximum Non-Repetitive Surge Current 

Fig. 3 - Forward Power Loss Characteristics 

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**VS-20ETF...-M3 Series** 

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## Vishay Semiconductors 

**==> picture [202 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>T J  = 25 °C<br>10 TJ = 150 °C<br>20ETF.. Series<br>1<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Instantaneous Forward Voltage (V)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 7 - Forward Voltage Drop Characteristics 

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**----- Start of picture text -----**<br>
6<br>20ETF.. Series IFM = 30 A<br>5 T J  = 25 °C<br>IFM = 20 A<br>4<br>3<br>IFM = 10 A<br>2<br>IFM = 5 A<br>1<br>IFM = 1 A<br>0<br>0 50 100 150 200<br> - Typical Reverse<br>rr<br>Q<br>Recovery Charge (µC)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
dI/dt - Rate of Fall of Forward Current (A/µs)<br>**----- End of picture text -----**<br>


Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 

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**----- Start of picture text -----**<br>
0.7 10<br>20ETF.. Series 20ETF.. Series IFM = 30 A<br>0.6 T J  = 25 °C TJ = 150 °C<br>0.5 I IFM FM = 30 A  = 20 A 8 IFM = 20 A<br>IFM = 10 A<br>0.4 II FMFM  = 1 A = 5 A 6 IFM = 10 A<br>0.3<br>4<br>IFM = 5 A<br>0.2<br>2<br>0.1 IFM = 1 A<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br> - Typical Reversetrr Recovery Time (µs) Q - Typical Reverserr<br>Recovery Charge (µC)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
dI/dt - Rate of Fall of Forward Current (A/µs)<br>**----- End of picture text -----**<br>


Fig. 8 - Recovery Time Characteristics, TJ = 25 °C 

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**----- Start of picture text -----**<br>
dI/dt - Rate of Fall of Forward Current (A/µs)<br>**----- End of picture text -----**<br>


Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 

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**----- Start of picture text -----**<br>
1.2<br>20ETF.. Series<br>TJ = 150 °C<br>0.9<br>IFM = 30 A<br>I FM  = 20 A<br>IFM = 10 A<br>0.6 IFM = 5 A<br>I FM = 1 A<br>0.3<br>0<br>0 50 100 150 200<br>dI/dt - Rate of Fall of Forward Current (A/µs)<br> - Typical Reverse<br>trr Recovery Time (µs)<br>**----- End of picture text -----**<br>


Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 

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**----- Start of picture text -----**<br>
25<br>20ETF.. Series IFM = 30 A<br>20 TJ = 25 °C I FM  = 20 A<br>IFM = 10 A<br>15<br>IFM = 5 A<br>10<br>IFM = 1 A<br>5<br>0<br>0 50 100 150 200<br>dI/dt - Rate of Fall of Forward Current (A/µs)<br> - Typical Reverse<br>Irr<br>Recovery Current (A)<br>**----- End of picture text -----**<br>


Fig. 12 - Recovery Current Characteristics, TJ = 25 °C 

Revision: 29-Nov-2021 

Document Number: 96214 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-20ETF...-M3 Series** 

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## Vishay Semiconductors 

**==> picture [202 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>30 20ETF.. Series T J  = 150 °C IFM = 30 A<br>25 IFM = 20 A<br>20 IFM = 10 A<br>15 I FM = 5 A<br>10<br>IFM = 1 A<br>5<br>0<br>0 50 100 150 200<br> - Typical Reverse<br>Irr<br>Recovery Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
dI/dt - Rate of Fall of Forward Current (A/µs)<br>**----- End of picture text -----**<br>


Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 

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**----- Start of picture text -----**<br>
1<br>Steady state value<br>(DC operation)<br>0.1<br>D = 0.50<br>D = 0.33<br>Single pulse<br>D = 0.25<br>D = 0.17<br>D = 0.08<br>20ETF.. Series<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Square Wave Pulse Duration (s)<br> - Transient Thermal Impedance (K/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 14 - Thermal Impedance ZthJC Characteristics 

Revision: 29-Nov-2021 

Document Number: 96214 

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**VS-20ETF...-M3 Series** 

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## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**|||**20**<br>**E**<br>**T**|**F**|**F**|**12**||**-M3**|**-M3**||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||1|||3<br>2<br>4|5||6||7|||
||**1**||-||Vishay Semiconductors product||||||||
||**2**||-||Current rating (20 = 20||A)||||||
||**3**||-||Circuit confguration:||||||||
||||||E = single||||||||
||**4**||-||Package:||||||||
||||||T = TO-220AC 2L||||||||
||**5**||-||Type of silicon:||||||||
||||||||||||||
||||||F = fast soft recovery rectifer||||08 = 800 V||||
||**6**||-||Voltage ratings||||10 =||1000 V||
||**7**||-||Environmental digit||||12 =||1200 V||



-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|||
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|||**PACKAGING DESCRIPTION**|
|VS-20ETF08-M3|50|||Antistatic plastic tube|
|VS-20ETF10-M3|50|||Antistatic plastic tube|
|VS-20ETF12-M3|50|||Antistatic plastic tube|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96156||
|Part markinginformation|||www.vishay.com/doc?95391||
|SPICE model|||www.vishay.com/doc?96866||



Revision: 29-Nov-2021 

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**Outline Dimensions** 

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www.vishay.com 

## Vishay Semiconductors 

## **2L TO-220AC** 

## **DIMENSIONS** in millimeters and inches 

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**----- Start of picture text -----**<br>
A<br>0.014 M B A M<br>(6)<br>Thermal pad<br>E A B A1 (E) 1 2<br>Q (6) A D D<br>H1 (H1) L1 (2)<br>C C<br>D2 (6)<br>(6) D c<br>D1 2 x b 2 x b2<br>Detail B<br>Detail B<br>A 2<br>L<br>E1 (6)<br>C A Base metal (b, b2) Plating<br>c c1 (4)<br>2 x e View A - A<br>e 1 (4)<br>b1, b3<br>0.015 M B A M Section C - C and D - D<br>Lead tip<br>Ø P<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Conforms to JEDEC [®]  outline TO-220AC<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.25|4.65|0.167|0.183|||D2|11.68|13.30|0.460|0.524|6,7|
|A1|1.14|1.40|0.045|0.055|||E|10.11|10.51|0.398|0.414|3,6|
|A2|2.50|2.92|0.098|0.115|||E1|6.86|8.89|0.270|0.350|6|
|b|0.69|1.01|0.027|0.040|||e|2.41|2.67|0.095|0.105||
|b1|0.38|0.97|0.015|0.038|4||e1|4.88|5.28|0.192|0.208||
|b2|1.20|1.73|0.047|0.068|||H1|6.09|6.48|0.240|0.255|6|
|b3|1.14|1.73|0.045|0.068|4||L|13.52|14.02|0.532|0.552||
|c|0.36|0.61|0.014|0.024|||L1|3.32|3.82|0.131|0.150|2|
|c1|0.36|0.56|0.014|0.022|4||Ø P|3.54|3.91|0.139|0.154||
|D|14.85|15.35|0.585|0.604|3||Q|2.60|3.00|0.102|0.118||
|D1|8.38|9.02|0.330|0.355|||||||||



## **Notes** 

> (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 

- (2) Lead dimension and finish uncontrolled in L1 

> (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body 

> (4) Dimension b1, b3, and c1 apply to base metal only 

> (5) Controlling dimensions: inches 

> (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 

- (7) Outline conforms to JEDEC® TO-220, except D2 

Revision: 13-Jun-2019 

Document Number: 96156 

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**Legal Disclaimer Notice** Vishay 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2022 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-20ETF12-M3/standard-recovery-diode-12-kv-20-a-single-131-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-20etf12-m3/rectifier-single-20a-1-2kv-to/dp/2909617)
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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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